Abstract: A data processor and a method for processing data is disclosed. The processor has an input port for receiving packets of data to be processed. A master controller acts to analyse the packets and to provide a header including a list of processes to perform on the packet of data and an ordering thereof. The master controller is programmed with process related data relating to the overall processing function of the processor. The header is appended to the packet of data. The packet with the appended header information is stored within a buffer. A buffer controller acts to determine for each packet stored within the buffer based on the header within the packet a next processor to process the packet. The controller then provides the packet to the determined processor for processing. The processed packet is returned with some indication that the processing is done. For example, the process may be deleted from the list of processes.

Abstract: An apparatus for selecting operating conditions of a genset, the apparatus including a processor circuit configured to select a set of operating points from a plurality of operating points of the genset each comprising an engine speed in a generator electrical output value and a plurality of cost values associated with operating the genset at respective operating points such that the sum of the cost values associated with the operating points in said set is minimized and such that the engine speed increases or decreases monotonically with monotonically increasing or decreasing electrical power output values.

Abstract: A block repair device is used in a Dynamic Random Access Memory (DRAM) having a primary array with a defective cell and a redundant array with a redundant row. The block repair device stores a block repair configuration that determines the dimensions (e.g., the number of rows and columns spanned) of a repair block. Routing circuitry is configured by the stored block repair configuration to output some row and column address bits from received row and column addresses in a selected ratio. Comparison circuitry compares the row and column address bits output by the routing circuitry with the address of the defective cell that defines the repair block. When a match occurs, the comparison circuitry implements a block repair by activating the redundant row and by causing data to be written to or read from the activated redundant row instead of the primary array.

Abstract: In an integrated circuit (IC) adapted for use in a stack of interconnected ICs, interrupted through-silicon-vias (TSVs) are provided in addition to uninterrupted TSVs. The interrupted TSVs provide signal paths other than common parallel paths between the ICs of the stack. This permits IC identification schemes and other functionalities to be implemented using TSVs, without requiring angular rotation of alternate ICs of the stack.

Abstract: A system includes a system controller and a configuration of series-connected semiconductor devices. Such a device includes an input for receiving a clock signal originating from a previous device, and an output for providing a synchronized clock signal destined for a succeeding device. The device further includes a clock synchronizer for producing the synchronized clock signal by processing the received clock signal and an earlier version of the synchronized clock signal. The device further includes a device controller for adjusting a parameter used by the clock synchronizer in processing the earlier version of the synchronized clock signal. The system controller has an output for providing a first clock signal to a first device, and an input for receiving a second clock signal from a second device. The second clock signal corresponds to a version of the first clock signal that has undergone processing by a clock synchronizer in at least one of the devices.

Abstract: A threshold voltage distribution scheme for multi-level Flash cells where an erase threshold voltage and at least one programmed threshold voltage lie in an erase voltage domain. Having at least one programmed threshold voltage in the erase voltage domain reduces the Vread voltage level to minimize read disturb effects, while extending the life span of the multi-level Flash cells as the threshold voltage distance between programmed states is maximized. The erase voltage domain can be less than 0V while a program voltage domain is greater than 0V. Accordingly, circuits for program verifying and reading multi-level Flash cells having a programmed threshold voltage in the erase voltage domain and the program voltage domain use negative and positive high voltages.

Abstract: In a ring-of-clusters network topology, groups of slave devices are accessed in parallel, such that the latency around the ring is proportional to the number of clusters and not proportional to the number of integrated circuits. The devices of a cluster share input and output ring segments such that packets arriving on the input segment are received and interpreted by all the devices in a cluster. In other embodiments, none, some or all but one slaves per cluster are asleep or otherwise disabled so that they do not input and interpret incoming packets. Regardless, in all embodiments, the slaves of a cluster cooperate, potentially under the controller's direction, to ensure that at most one of them is actively driving the output segment at any given time. The devices may be addressed through a device ID, a cluster ID, or a combination thereof. Embodiments of the invention are suited to exploit multi-chip module implementations and forms of vertical circuit stacking.

Abstract: A non-volatile memory device using existing row decoding circuitry to selectively provide a global erase voltage to at least one selected memory block in order to facilitate erasing of all the non-volatile memory cells of the at least one selected memory block. More specifically, the erase voltage is coupled to the cell body or substrate of memory cells of the at least one selected memory block, where the cell body is electrically isolated from the cell body of non-volatile memory cells in at least one other memory block. By integrating the erase voltage path with the existing row decoding circuitry used to drive row signals for a selected memory block, no additional decoding logic or circuitry is required for providing the erase voltage to the at least one selected memory block.

Abstract: A delay locked loop includes initialization circuitry that ensures that a DLL is initialized to an operating point that is not to close to either end of a delay vs. control voltage characteristic. The initialization circuitry forces the DLL to initially search for a lock point starting from an initial delay, the delay is varied in one direction, forcing the DLL to skip the first lock point. The initialization circuitry only allows the DLL to vary the delay of the voltage controlled delay loop in the one direction from the initial delay until the operating point is reached.

Abstract: This invention relates to a network architecture for data communication between data sources and data destinations via network nodes and at least one data concentrator. According to the invention the nodes (2, 4) are conceived to communicate with a data concentrator (1) in both directions either via a permanently operative network (8) in the multihop mode or via an occasionally operative network (5) in wireless connection with mobile user nodes (6) in the nomadic mode. Means for commutation are provided to detect faulty multihop nodes and to activate nomadic nodes instead until the fault disappears, in order to maintain the overall functionality of the network. Moreover the network according to the invention allows to share the data collected by mobile users with other mobile users, thus forming a peer-to-peer network.

Abstract: A memory device includes core memory such as flash memory for storing data. The memory device includes a first power input to receive a first voltage used to power the flash memory. Additionally, the memory device includes a second power input to receive a second voltage. The memory device includes power management circuitry configured to receive the second voltage and derive one or more internal voltages. The power management circuitry supplies or conveys the internal voltages to the flash memory. The different internal voltages generated by the power management circuitry (e.g., voltage converter circuit) and supplied to the core memory enable operations such as read/program/erase with respect to cells in the core memory.

Abstract: A clock applying circuit for a synchronous memory is comprised of a clock input for receiving a clock input signal, apparatus connected to the synchronous memory for receiving a driving clock signal, and a tapped delay line for receiving the clock input signal for delivering the clock driving signal to the synchronous memory in synchronism with but delayed from the clock input signal, the delay being a small fraction of the clock period of the clock input signal.

Abstract: A non-volatile memory device having a memory array organized into a plurality of memory blocks, having either planar memory cells or stacks of cells. Row decoding circuitry of the memory device is configured to select a group of the plurality of memory blocks in response to a first row address, and to select a memory block of the group for receiving row signals in response to a second row address. Row decoding circuitry associated with each group of memory blocks can have a row pitch spacing that is greater than a row pitch spacing of a single memory block and less than or equal to a total row pitch spacing corresponding to the group of memory blocks.

Abstract: A system includes a voltage generator to produce a pre-charge voltage signal for pre-charging one or more signals in a memory circuit. The one or more signals can be data bus lines used to access memory. The voltage generator can include an input indicating whether the memory circuit is set to a power-saving mode. According to one embodiment, the input adjusts a magnitude of the pre-charge voltage signal produced by the voltage generator. Such an embodiment is useful over conventional methods because adjusting the pre-charge voltage can result in power savings. As an example, when in the power-saving mode, the voltage generator circuit can adjust the pre-charge voltage to a value that reduces an amount of leakage current associated with a pre-charge voltage. Reducing the leakage with respect to the pre-charge voltage means that the saved power can be used for other useful purposes.

Abstract: Various memory devices (e.g., DRAMs, flash memories) are serially interconnected. The memory devices need their identifiers (IDs). Each of the memory devices generates IDs for neighboring memory devices. The IDs are generated synchronously with clock. Command data and previously generated ID data are synchronously registered. The registered data is synchronously output and provided as parallel data for calculation of a new ID for the neighboring device. The calculation is an addition or subtraction by one. The IDs are generated in a packet basis by interpreting serial packet-basis commands received at the serial input in response to clocks. A clock latency is controlled in response to the interpreted ID and the clock. In accordance with the controlled clock latency, a new ID is provided in a packet basis. In high frequency generation applications (e.g., 1 GHz), two adjacent devices connected in daisy chain fashion are guaranteed enough time margin to perform the interpretation of packet commands.

Abstract: A plurality of memory devices of mixed type (e.g., DRAMs, SRAMs, MRAMs, and NAND-, NOR- and AND-type Flash memories) are serially interconnected. Each device has device type information on its device type. A specific device type (DT) and a device identifier (ID) contained in a serial input (SI) as a packet are fed to one device of the serial interconnection. The device determines whether the fed DT matches the DT of the device. In a case of match, a calculator included in the device performs calculation to generate an ID accompanying the fed DT for another device and the fed ID is latched in a register of the device. In a case of no-match, the ID generation is skipped and no ID is generated for another device. The DT is combined with the generated or the received ID depending on the device type match determination. The combined DT and ID is as a packet transferred to a next device. Such a device type match determination and ID generation or skip are performed in all devices of the serial interconnection.

Abstract: A switch includes a reserved pool of buffers in a shared memory. The reserved pool of buffers is reserved for exclusive use by an egress port. The switch includes pool select logic which selects a free buffer from the reserved pool for storing data received from an ingress port to be forwarded to the egress port. The shared memory also includes a shared pool of buffers. The shared pool of buffers is shared by a plurality of egress ports. The pool select logic selects a free buffer in the shared pool upon detecting no free buffer in the reserved pool. The shared memory may also include a multicast pool of buffers. The multicast pool of buffers is shared by a plurality of egress ports. The pool select logic selects a free buffer in the multicast pool upon detecting an IP Multicast data packet received from an ingress port.

Abstract: A method and an apparatus for upgrading an existing service outlet (e.g. LAN, telephone, power or CATV outlet) in a house by adding functionality thereto. The functionality is added by an add-on module, connected electrically and secured mechanically to the existing outlet. Several attachment devices are exampled, including surface attachment, side clamping, snap locking, strap securing and fastening screws. The add-on module may include a service connector for retaining the basic existing outlet function. The module may be attached in a permanent way or by using a detachable solution.

Abstract: A method and corresponding apparatus for providing a cellular subscriber with access to a WLAN are provided. They involve identifying a multimode mobile terminal, which corresponds to the subscriber and the WLAN from an access request. Based on the identification, the WLAN is authorized to provide the mobile terminal with access. The mobile terminal is then provided with access to the WLAN as a cellular subscriber and enables interoperability between the two networks. For example, the subscriber does not have to supply a credit card to pay for WLAN access directly. Instead, the subscriber pays a cellular network provider, and, in turn, the cellular network provider pays a WLAN provider for the access.

Abstract: An asynchronously pipelined SDRAM has separate pipeline stages that are controlled by asynchronous signals. Rather than using a clock signal to synchronize data at each stage, an asynchronous signal is used to latch data at every stage. The asynchronous control signals are generated within the chip and are optimized to the different latency stages. Longer latency stages require larger delays elements, while shorter latency states require shorter delay elements. The data is synchronized to the clock at the end of the read data path before being read out of the chip. Because the data has been latched at each pipeline stage, it suffers from less skew than would be seen in a conventional wave pipeline architecture. Furthermore, since the stages are independent of the system clock, the read data path can be run at any CAS latency as long as the re-synchronizing output is built to support it.