Patents Assigned to Nara Institute of Science and Technology
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Publication number: 20160272952Abstract: L-cysteine can be produced inexpensively and efficiently by using a bacterium belonging to the family Enterobacteriaceae modified to reduce activity of O-acetylserine sulfhydrylase B thereof, the bacterium being modified so that the C terminal region of its thiosulfate-binding protein is deleted, and the bacterium having an increased ability to produce L-cysteine in the presence of a sulfate.Type: ApplicationFiled: March 14, 2014Publication date: September 22, 2016Applicant: National University Corporation Nara Institute of Science and TechnologyInventors: Iwao Ohtsu, Takeshi Nakatani, Ali Tamakoshi, Sayo Takahashi, Hiroshi Takagi
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Patent number: 9293549Abstract: A silicon carbide layer includes a first region having a first conductivity type, a second region provided on the first region and having a second conductivity type, and a third region provided on the second region and having the first conductivity type. A trench having an inner surface is formed in the silicon carbide layer. The trench penetrates the second and third regions. The inner surface of the trench has a first side wall and a second side wall located deeper than the first side wall and having a portion made of the second region. Inclination of the first side wall is smaller than inclination of the second side wall.Type: GrantFiled: October 23, 2012Date of Patent: March 22, 2016Assignees: Sumitomo Electric Industries, Ltd., National University Corporation Nara Institute of Science and TechnologyInventors: Takeyoshi Masuda, Tomoaki Hatayama
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Patent number: 9163254Abstract: An object of the present invention is to identify sequence features of the 5? UTR, which are involved in changes in the translational state of plants under environmental stresses, and to provide a recombinant DNA molecule, an expression vector, a transformant, and the like, having the above sequence features.Type: GrantFiled: August 19, 2010Date of Patent: October 20, 2015Assignee: National University Corporation Nara Institute of Science and TechnologyInventors: Ko Kato, Shigehiko Kanaya, Hideyuki Matsuura, Shinya Takenami, Tatsuya Nosho, Yuhki Kubo, Kiyotaka Ueda
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Patent number: 9149837Abstract: A substrate having rod-like molecules on a surface thereof including: a substrate in which a pattern including a convex portion with a flat upper surface is formed on at least a portion thereof; and a plurality of rod-like molecules, which are formed into rod-like shape, are aligned in line in a direction crossing a molecular length direction of each of the rod-like molecules an the upper surface of the convex portion, and have liquid crystalline states, wherein the molecular length LR of the rod-like molecule is 2.0 or less times LN, which is a length of the rod-like molecule in the molecular length direction within the convex portion; and a method for producing a substrate having rod-like molecules on a surface thereof.Type: GrantFiled: March 6, 2013Date of Patent: October 6, 2015Assignees: National University Corporation Nara Institute of Science and Technology, Tokyo Ohka Kogyo Co., Ltd.Inventors: Masanobu Naito, Yusuke Nakamura, Toshiyuki Ogata, Toshikazu Takayama, Takayuki Hosono
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Patent number: 9111400Abstract: In an abnormal driving behavior detection system for a vehicle, an obtainer repeatedly obtains an observed value indicative of at least one of a running condition of the vehicle and a driver's driving operation of the vehicle. A mode-probability calculator calculates, each time an observed value is obtained at a given obtaining timing as a target obtained value, a mode probability for each of driving modes as a function of one or more previous observed values. A deviation calculator obtains a predicted observed value for each driving mode using a driver's normal behavior model defined therefor, and calculates a deviation of the target observed value from the predicted observed value for each driving mode. An abnormality determiner determines whether there is at least one driver's abnormal behavior based on the mode probability for each driving mode and the deviation calculated for each driving mode.Type: GrantFiled: March 14, 2014Date of Patent: August 18, 2015Assignees: DENSO CORPORATION, National University Corporation Nara Institute Of Science And TechnologyInventors: Takashi Bando, Masumi Egawa, Takatomi Kubo, Ryunosuke Hamada, Kazushi Ikeda
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Patent number: 9006747Abstract: Provided are a technology that simply forms a particular crystal surface such as a {03-38} surface having high carrier mobility in trench sidewalls and a SiC semiconductor element where most of the trench sidewalls appropriate for a channel member are formed from {03-38} surfaces. A trench structure formed in a (0001) surface or an off-oriented surface of a (0001) surface with an offset angle 8° or lower of SiC is provided. The channel member is in the trench structure. At least 90% of the area of the channel member is a {03-38} surface or a surface that a {03-38} surface offset by an angle from ?8° to 8° in the <1-100> direction. Specifically, the trench sidewalls are finished to {03-38} surfaces by applying a thermal etching to a trench with (0001) surfaces of SiC. Thermal etching is conducted in a chlorine atmosphere above 800° C. with nitrogen gas as the carrier.Type: GrantFiled: August 27, 2012Date of Patent: April 14, 2015Assignee: National University Corporation Nara Institute of Science and TechnologyInventors: Tomoaki Hatayama, Hidenori Koketsu, Yoshihiro Todokoro
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Patent number: 8999854Abstract: On a substrate, a silicon carbide layer provided with a main surface is formed. A mask is formed to cover a portion of the main surface of the silicon carbide layer. The main surface of the silicon carbide layer on which the mask is formed is thermally etched using chlorine-based gas so as to provide the silicon carbide layer with a side surface inclined relative to the main surface. The step of thermally etching is performed in an atmosphere in which the chlorine-based gas has a partial pressure of 50% or smaller.Type: GrantFiled: October 23, 2012Date of Patent: April 7, 2015Assignees: Sumitomo Electric Industries, Ltd., National University Corporation Nara Institute of Science and TechnologyInventors: Takeyoshi Masuda, Tomoaki Hatayama
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Patent number: 8975385Abstract: The rare-earth complex of the present invention has high luminous efficiency, since it has a structure represented by the following general formula (I):Type: GrantFiled: July 15, 2010Date of Patent: March 10, 2015Assignee: National University Corporation Nara Institute of Science and TechnologyInventors: Yasuchika Hasegawa, Tsuyoshi Kawai, Takuya Nakashima, Tetsuya Nakagawa, Kohei Miyata
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Patent number: 8959001Abstract: A test pattern is sequentially selected from an original test pattern sequence constituted by a plurality of test patterns including a don't care bit. Power consumption in each of regions obtained by substantially equally dividing a layout region of a semiconductor integrated circuit in a case where a don't care value is specified in the selected test pattern and this selected test pattern is applied to the semiconductor integrated circuit is estimated. A searching is conducted for a don't care value of the selected test pattern which minimizes a variation in power consumption among the regions by repeatedly changing the don't care value and repeatedly estimating power consumption in the regions. A new test pattern sequence constituted by a plurality of test patterns including no don't care bit is generated by defining the don't care value obtained by the searching as a don't care value of the selected test pattern.Type: GrantFiled: July 16, 2012Date of Patent: February 17, 2015Assignees: National University Corporation Nara Institute of Science and Technology, Kyushu Institute of TechnologyInventors: Michiko Inoue, Tomokazu Yoneda, Yasuo Sato
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Patent number: 8907080Abstract: Provided is a complex comprising a hydrophobic cluster compound and a ?-1,3-1,6-D-glucan having a degree of branching (a ratio of ?-1,6 linkages to ?-1,3 linkages) of 50 to 100%.Type: GrantFiled: November 26, 2010Date of Patent: December 9, 2014Assignees: Daiso Co., Ltd., Osaka City University, Osaka Prefecture University Public Corporation, Kyoto Prefectural Public University Corporation, National University Corporation Nara Institute of Science and TechnologyInventors: Toshio Suzuki, Hideaki Ueda, Takeshi Nagasaki, Mitsunori Kirihata, Munenori Numata, Atsushi Ikeda
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Patent number: 8874201Abstract: An intracerebral information measuring device which can be mounted on the head of a subject by simple surgery and which attains measurement of low invasion, high sensitivity, and high resolution is provided. An internally mounted unit is composed of a probe section to be inserted in the brain through a hole having a small diameter bored in the skull of the subject, and a head section integrated with the probe section and to be disposed between the skull and the scalp. The probe section includes an electrode for sensing an action potential. The head section includes a transmitter for wirelessly transmitting signals captured with the electrode to the outside. On the outside of the head, an external measuring unit for receiving the signal transmitted from the head section and reproducing the original signal is provided.Type: GrantFiled: September 25, 2009Date of Patent: October 28, 2014Assignee: National University Corporation Nara Institute of Science and TechnologyInventors: Takashi Tokuda, Jun Ohta
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Patent number: 8846052Abstract: A bacterial toxin protein such as a Shiga toxin protein is efficiently produced using plant cells. The plant cells are transformed using a DNA construct containing DNA encoding a hybrid protein in which the bacterial toxin proteins such as the Shiga toxin proteins are tandemly linked through a peptide having the following characteristics (A) and (B) to produce the bacterial toxin protein in the plant cells: (A) a number of amino acids is 12 to 30; and (B) a content of proline is 20 to 35%.Type: GrantFiled: April 28, 2009Date of Patent: September 30, 2014Assignees: Idemitsu Kosan Co., Ltd., National University Corporation Nara Institute of Science and TechnologyInventors: Kazutoshi Sawada, Takeshi Matsui, Mayumi Yoshida, Nobuo Yoshida, Kyoko Yoshida
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Patent number: 8697233Abstract: A metal-coated material comprising a metal-coated lipid bilayer vesicle and a preparation method thereof are provided. A metal-coated material comprising a metal-coated lipid bilayer vesicle having a network of siloxane bonding (Si—O—Si) on its surface. a method for preparing the metal-coated lipid bilayer vesicle comprising the following steps: (1) rendering the functional group(s) having the ability of carrying the metal catalyst to the surface of lipid bilayer vesicle having a network of siloxane bonding (Si—O—Si bonding) on its surface, at or after the formation, by self-organization, of the lipid bilayer vesicle; (2) immobilizing the metal catalyst on the surface of the lipid bilayer vesicle; (3) optionally, reducing the metal catalyst; and (4) performing electroless plating.Type: GrantFiled: October 31, 2006Date of Patent: April 15, 2014Assignees: Nara Institute of Science and Technology, JX Nippon Mining & Metals CorporationInventors: Jun-ichi Kikuchi, Yoshihiro Sasaki, Mineo Hashizume, Toru Imori
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Patent number: 8698083Abstract: A method and device for evaluating a solar cell each of which makes it possible to easily evaluate a defect of a solar cell especially in such a manner that an internal cause defect and an external cause defect are distinguished from each other. The device includes: electric current passing means for passing, in a forward direction, an electric current through a solar cell element constituting the solar cell; light emission detecting means for detecting, out of light emitted from the solar cell element due to the electric current passed by the electric current passing means, light in a first range of wavelengths from 800 nm to 1300 nm and light in a second range of wavelengths from 1400 nm to 1800 nm; and judging means for distinguishing between an internal cause defect and an external cause defect.Type: GrantFiled: August 3, 2010Date of Patent: April 15, 2014Assignee: National University Corporation Nara Institute of Science and TechnologyInventors: Takashi Fuyuki, Ayumi Tani
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Patent number: 8674116Abstract: There is provided a metal complex that is large in degree of a change in emission intensity, the change being caused by a change in molecular structure of a ligand through a photochromic reaction. The metal complex is arranged such that a diarylethene-based photochromic molecule coordinates to a metal ion via two groups directly bonded to respective reaction site carbons and that the groups are each independently a group selected from Formula Group (1) below.Type: GrantFiled: May 18, 2010Date of Patent: March 18, 2014Assignees: National University Corporation, Nara Institute of Science and TechnologyInventors: Tsuyoshi Kawai, Yasuchika Hasegawa, Tetsuya Nakagawa
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Patent number: 8645130Abstract: A processing unit is provided which executes speech recognition on speech signals captured by a microphone for capturing sounds uttered in an environment. The processing unit has: an initial reflection component extraction portion that extracts initial reflection components by removing diffuse reverberation components from a reverberation pattern of an impulse response generated in the environment; and an acoustic model learning portion that learns an acoustic model for the speech recognition by reflecting the initial reflection components to speech data for learning.Type: GrantFiled: November 20, 2008Date of Patent: February 4, 2014Assignees: Toyota Jidosha Kabushiki Kaisha, National University Corporation Nara Institute of Science and TechnologyInventors: Narimasa Watanabe, Kiyohiro Shikano, Randy Gomez
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Patent number: 8641114Abstract: A robot hand which can be formed in the shape of a human hand and improves maintenance performance, and generates fingertip force is provided. A robot hand (1) of the present invention is provided with a hand section (3) and an arm section (5). The hand section (3) corresponds to the portion of a human hand which is forward from the wrist thereof. The arm section (5) is provided with a drive device (d5) including a plurality of motors and generates driving torque for driving each movable section of the hand section (3). The hand section (3) and the arm section (5) are configured in such a manner that a group (g36) of wrist-mounted pulleys which are first driving torque transmitting members coaxially arranged and a group (r5) of arm pulleys which are second driving torque transmitting members coaxially arranged transmit driving torque generated by the drive device (d5) to each movable section of the hand section (3) via gears meshing with each other.Type: GrantFiled: December 3, 2009Date of Patent: February 4, 2014Assignee: National University Corporation Nara Institute of Science and TechnologyInventors: Yuichi Kurita, Atsutoshi Ikeda, Yasuhiro Ono, Tsukasa Ogasawara
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Patent number: 8545807Abstract: The present invention has been created to provide a near infrared high emission rare-earth complex having an excellent light-emitting property in the near infrared region. The near infrared high emission rare-earth complex of the present invention is characterized in that its structure is expressed by the following general formula (1): where Ln(III) represents a trivalent rare-earth ion; n is an integer equal to or greater than three; Xs represent either the same member or different members selected from a hydrogen atom, a deuterium atom, halogen atoms, C1-C20 groups, hydroxyl groups, nitro groups, amino groups, sulfonyl groups, cyano groups, silyl groups, phosphonic groups, diazo groups and mercapto groups; and Z represents a bidentate ligand.Type: GrantFiled: February 26, 2009Date of Patent: October 1, 2013Assignees: National University Corporation Nara Institute of Science and Technology, National University Corporation Shizuoka UniversityInventors: Yasuchika Hasegawa, Hideki Kawai, Tsuyoshi Kawai
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Patent number: 8546815Abstract: Disclosed are an SiC semiconductor element and manufacturing method for an SiC semiconductor element in which the interface state density of the interface of the insulating film and the SiC is reduced, and channel mobility is improved. Phosphorus (30) is added to an insulating film (20) formed on an SiC semiconductor (10) substrate in a semiconductor element. The addition of phosphorous to the insulating film makes it possible to significantly reduce the defects (interface state density) in the interface (21) of the insulating film and the SiC, and to dramatically improve the channel mobility when compared with conventional SiC semiconductor elements. The addition of phosphorus to the insulating film is carried out by heat treatment. The use of heat treatment to add phosphorous to the insulating film makes it possible to maintain the reliability of the insulating film, and to avoid variation in channel mobility and threshold voltage.Type: GrantFiled: December 13, 2010Date of Patent: October 1, 2013Assignee: National University Corporation Nara Institute of Science and TechnologyInventors: Hiroshi Yano, Dai Okamoto
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Publication number: 20130236947Abstract: A substrate having rod-like molecules on a surface thereof including: a substrate in which a pattern including a convex portion with a flat upper surface is formed on at least a portion thereof; and a plurality of rod-like molecules, which are formed into rod-like shape, are aligned in line in a direction crossing a molecular length direction of each of the rod-like molecules an the upper surface of the convex portion, and have liquid crystalline states, wherein the molecular length LR of the rod-like molecule is 2.0 or less times LN, which is a length of the rod-like molecule in the molecular length direction within the convex portion; and a method for producing a substrate having rod-like molecules on a surface thereof.Type: ApplicationFiled: March 6, 2013Publication date: September 12, 2013Applicants: Tokyo Ohka Kogyo Co., Ltd., National University Corporation Nara Institute of Science and TechnologyInventors: Masanobu Naito, Yusuke Nakamura, Toshiyuki Ogata, Toshikazu Takayama, Takayuki Hosono