Abstract: The present invention provides a carboxylated nanodiamond-mediated CRISPR-Cas9 delivery system for gene editing comprising nanodiamond (ND) particles as the carriers of CRISPR-Cas9 components designed to introduce the mutation in a given gene for repairing a tissue damage.

Abstract: Methods and structures includes providing a substrate, forming a prelayer over a substrate, forming a barrier layer over the prelayer, and forming a channel layer over the barrier layer. Forming the prelayer may include growing the prelayer at a graded temperature. Forming the barrier layer is such that the barrier layer may include GaAs or InGaAs. Forming the channel layer is such that the channel layer may include InAs or an Sb-based heterostructure. Thereby structures are formed.

Abstract: Disclosed herein is a method of treating a subject having arterial stenosis. The method comprises: (a) providing a plurality of image frames of an artery of the subject taken in sequence; (b) in a plurality of cross-sections of the artery, determining a maximum diameter and a minimum diameter of each of the plurality of cross-sections of the artery among the plurality of image frames of the step (a); (c) calculating an average vasodilation ratio of the artery base on the maximum diameter and the minimum diameter determined in the step (b); and (d) treating the subject based on the average vasodilation ratio calculated in the step (c), by implanting a stent to the subject when the average vasodilation ratio is equal to or greater than 0.2; or administering to the subject an effective amount of a vasodilator when the average vasodilation ratio is less than 0.2.

Abstract: A biomimetic system is provided for evaluating an effect of a test sample in vitro, and includes at least one organ chip, at least one medium container, a liquid pump, a nebulizer, a gas pump, and a chamber device. The liquid pump is provided to drive a liquid medium in the medium container to flow into a lower sub-channel of the organ chip and then to be discharged back into the medium container. The nebulizer is provided for atomizing a test solution including the test sample into an aerosol. The gas pump is provided to generate a pressurized gas which force the aerosol to flow out of a chamber of the chamber device and then to flow through an upper sub-channel of the organ chip.

Abstract: A vortex-induced vibration wind energy harvesting device, including an array consisting of a plurality of oscillators and a plurality of piezoelectric microelectromechanical systems (MEMSs), is provided. An oscillator is mounted on each of the piezoelectric MEMSs. When any one of the oscillators is oscillated by and resonant with vortex shedding due to an incoming airflow, its vortices in the wake will enhance the oscillation of the downstream oscillators, so that overall oscillation of the oscillators in the array is strengthened. The piezoelectric MEMSs are deformed by the vibration of these oscillators to generate voltage and current to output. In the present invention, the oscillators are arranged closely. When the airflow passes the array, even weak airflow can generate periodic force and cause significant oscillation due to resonance. The MEMS can convert mechanical energy into electrical energy and output it in order to achieve the purpose of wind energy harvesting.

Abstract: A method for regulating traffic of a Transmission Control Protocol (TCP) flow includes: deciding, based on a ratio of current bucket level to bucket size, a value of an Explicit Congestion Notification (ECN) bit of a packet; setting a field of a meter tag of the packet based on a packet length of the packet, the value of the ECN bit, and a current bucket level; updating the current bucket level based on the field of the meter tag; calculating an actual transmission rate; and determining an adjustment value based on a difference between the actual transmission rate and a target rate, and adjusting a rate of change of bucket level based on the adjustment value.

Abstract: A separate quantization method of forming a combination of 4-bit and 8-bit data of a neural network is disclosed. When a training data set and a validation data set exist, a calibration manner is used to determine a threshold for activations of each of a plurality of layers of a neural network model, so as to determine how many of the activations to perform 8-bit quantization. In a process of weight quantization, the weights of each layer are allocated to 4-bit weights and 8-bit weights according to a predetermined ratio, so as to make the neural network model have a reduced size and a combination of 4-bit and 8-bit weights.

Abstract: A method of fabricating a thin film with a varying thickness includes the steps of providing a shadow mask with an opening, providing a carrier plate, arranging a substrate on the carrier plate, and coating the substrate through the opening whilst rotating the carrier plate relative to the shadow mask. A plurality of zones of the substrates is swept and exposed from arcuate portions of the opening per each turn by a plurality of predetermined exposure times, respectively. The varying thickness of the thin film corresponds to variation of the predetermined exposure times.

Abstract: Methods and structures includes providing a substrate, forming a prelayer over a substrate, forming a barrier layer over the prelayer, and forming a channel layer over the barrier layer. Forming the prelayer may include growing the prelayer at a graded temperature. Forming the barrier layer is such that the barrier layer may include GaAs or InGaAs. Forming the channel layer is such that the channel layer may include InAs or an Sb-based heterostructure. Thereby structures are formed.

Abstract: A method of fabricating transistors with short gate length by two-step photolithography is provided. This method utilizes the two-step photolithography by a stepper as well as controlling a first exposed position and a second exposed position to change the gate length.

Abstract: A quasi-single-crystal film and its manufacturing method thereof are provided, in which a metal film having a preferred orientation of <111> on its surface is subjected to a mechanical stretching force, such that the crystal grains thereof are able to form in a much more orderly arrangement, and a quasi-single-crystal film having preferred orientations on three axes can be obtained. The proposed quasi-single-crystal film has preferred orientations of <211> and <110> on its stretching direction and a direction that is perpendicular to the stretching direction, respectively, and retains a preferred orientation of <111> on its surface. By employing the present invention, it is advantageous of manufacturing large-area quasi single crystal films having high anisotropy as well as growing two dimensional materials or developing of other anisotropic feature structures.

Abstract: A semiconductor structure having a Si substrate heterointegrated with GaN and a method for fabricating the same is disclosed. The method uses a (100) silicon substrate to fabricate a hundred nanometer scale hole and uses wet etching to etch the silicon substrate, thereby exposing the (111) crystal surface of the silicon substrate. The (111) crystal surface is used as a nucleating crystal surface of an AlN buffer layer and GaN. When GaN is grown, silane is reacted with GaN to adjust the concentration of doping silicon atoms into GaN, thereby forming a semiconductor structure having a Si substrate heterointegrated with GaN.

Abstract: A method for increasing an oxide thickness at trench corner of an UMOSFET is provided, comprising providing an N-type substrate, and forming an N-type drift region, N-type and P-type heavily doped regions and P-type body therein. A trench is defined through lithography, and a pad oxide is formed along the trench through oxidation or deposition process. An oxidation barrier is formed upon the pad oxide. A thermal oxidation process is employed, so a corner oxide is effectively formed at the trench corner. After removing the pad oxide and oxidation barrier, various back-end processes are carried out to complete the transistor structure. The invention is aimed to increase oxide thickness near the trench bottom, and can be applied to high voltage devices, such as SiC.

Abstract: A method for DNA sequence alignment is proposed to include steps of: generating multiple strings by acquiring foremost k number of suffixes corresponding to a reference DNA sequence; grouping the strings into multiple string groups; sorting the strings in each of the string groups to generate sorting results; obtaining sorted suffixes and a suffix array based on the sorting results; establishing FM-index data based on the sorted suffixes and the suffix array; and performing DNA sequence alignment on a target string based on the FM-index data to obtain an alignment result.

Abstract: Provided is a continuous microalgae culture module, including an outdoor culture unit, a high-density culture unit, a pigment induced unit, and a harvesting unit. A method of culturing microalgae containing macular pigment is also provided, including sequentially culturing microalgae with medium in the outdoor culture unit and the high-density culture unit, producing macular pigment in the pigment induced unit through different light irradiation, and collecting the microalgal biomass containing macular pigment in the harvesting unit.

Abstract: A silicon metal-oxide-semiconductor field effect transistor with a wide-bandgap III-V compound semiconductor drain and a method for fabricating the same are disclosed. The method fabricates a hundred nanometer-scale hole in a (100) silicon substrate to expose the (111) facet of the silicon substrate, which favors to use selective area growth to form lattice matched III-V materials with high quality.

Abstract: A signal processing method is provided. First, at least one transmitted signal is output to at least one target, and the target reflects at least one reflected signal to receiving antennas, which then generate receiving signals upon receipt of the reflected signal. Next, the transmitted signal and each receiving signal are processed to generate processing signals. The processing signals are arranged in a form of matrix, to generate a channel coefficient matrix having M×N channel coefficient matrix blocks. Next, the channel coefficient matrix is divided into Ndivide×Mdivide secondary channel coefficient matrices, which are then substituted into a snapshot vector matrix equation to generate a snapshot vector matrix for calculating an angle of the target. The signal processing method can establish an optimal secondary channel coefficient matrix arrangement by using a special signal preprocessing manner, to improve the resolution and accuracy of the estimated angle parameter of the target.

Abstract: A radio frequency integrated circuit includes a silicon CMOS substrate with at least one CMOS device buried therein, and at least one thin film transistor formed on the silicon CMOS substrate and functioning as a radio frequency device. The thin film transistor includes a T-shaped gate electrode. A method for the fabricating a radio frequency integrated circuit is also disclosed.

Abstract: Disclosed herein is a method of treating a subject having arterial stenosis. The method comprises: (a) providing a plurality of image frames of an artery of the subject taken in sequence; (b) in a plurality of cross-sections of the artery, determining a maximum diameter and a minimum diameter of each of the plurality of cross-sections of the artery among the plurality of image frames of the step (a); (c) calculating an average vasodilation ratio of the artery base on the maximum diameter and the minimum diameter determined in the step (b); and (d) treating the subject based on the average vasodilation ratio calculated in the step (c), by implanting a stent to the subject when the average vasodilation ratio is equal to or greater than 0.2; or administering to the subject an effective amount of a vasodilator when the average vasodilation ratio is less than 0.2.

Abstract: The invention provides a quantum dot manufacturing method and related quantum dot semiconductor structure. The quantum dot semiconductor structure includes: a conductive ridge on a substrate; an insulative layer covering the substrate and the conductive ridge, wherein the insulative layer includes a top portion and two sidewalls over the conductive ridge; a plurality of quantum dots respectively embedded within a plurality of silicon dioxide spacer islands, which are adhered to the sidewalls of the insulative layer; and a plurality of conductive ledges adhered to the silicon dioxide spacer islands, wherein each of the conductive ledges is a portion of an electrode with alignment to the corresponding quantum dot.