Patents Assigned to National Chung-Hsing University
  • Patent number: 8982448
    Abstract: An electrowetting device includes: a liquid-confining member including a base and an electrode unit supported on the base, the liquid-confining member defining an inner chamber; a first liquid of a magnetic ink disposed in the inner chamber; and a second liquid of a polar material disposed in the inner chamber and immiscible with the first liquid. The first and second liquids contact each other to define a liquid-liquid interface therebetween.
    Type: Grant
    Filed: November 26, 2013
    Date of Patent: March 17, 2015
    Assignee: National Chung-Hsing University
    Inventor: Incha Hsieh
  • Patent number: 8975331
    Abstract: The present invention relates to a waterborne polyurethane containing biodegradable segments and the process for synthesizing the same. The waterborne polyurethane according to the present invention has excellent biodegradable, biocompatible and mechanical characteristics and thus is a useful biomedical material, in particular for making films for medical applications.
    Type: Grant
    Filed: October 25, 2011
    Date of Patent: March 10, 2015
    Assignees: Great Eastern Resins Industrial Co., Ltd., National Chung Hsing University
    Inventors: Shenghong A. Dai, Chien-Wen Chen, You-Sing Chen, Shan-Hui Hsu
  • Patent number: 8974840
    Abstract: The present invention discloses a novel milk-fermented product comprising a group of peptides. The peptides are composed from no. 1 to no. 7 of the figure that is selected from the group consisting of FIG. 11 to FIG. 18. And the novel milk-fermented product is used for suppressing the reduction of bone mineral density. Therefore, the novel milk-fermented product could be a component of foods, nutrient supplement or medicine for treating or preventing osteoporosis.
    Type: Grant
    Filed: July 9, 2014
    Date of Patent: March 10, 2015
    Assignee: National Chung Hsing University
    Inventors: Chuan-Mu Chen, Hsiao-Ling Chen
  • Patent number: 8853055
    Abstract: A method for manufacturing a semiconductor device includes: (a) providing a base unit made of a material having a first lattice constant; (b) forming a first sacrificial layer made of a material having a second lattice constant on the base unit and a second sacrificial layer made of a material having a third lattice constant on the first sacrificial layer, the first lattice constant ranging between the second and third lattice constants so that two lattice stresses in opposite directions occur in the epitaxial substrate; (c) forming an epitaxial unit on the second sacrificial layer; (d) forming a permanent substrate on the epitaxial unit; and (e) removing the epitaxial unit.
    Type: Grant
    Filed: March 18, 2013
    Date of Patent: October 7, 2014
    Assignee: National Chung-Hsing University
    Inventors: Ray-Hua Horng, Ming-Chun Tseng, Fan-Lei Wu
  • Patent number: 8853057
    Abstract: A method for fabricating semiconductor devices includes: (a) forming a layered structure that includes a temporary substrate, a plurality of spaced apart sacrificial film regions on the temporary substrate, and a plurality of valley-and-peak areas among the sacrificial film regions; (b) growing laterally and epitaxially an epitaxial film layer over the sacrificial film regions and the valley-and-peak areas, wherein gaps are formed among the epitaxial film layer and the valley-and-peak areas; (c) forming a conductive layer to contact the epitaxial film layer; (d) forming a plurality of grooves to divide the epitaxial film layer and the conductive layer into a plurality of epitaxial structures on the temporary substrate; and (e) removing the temporary substrate and the sacrificial film regions from the epitaxial structures by etching the sacrificial film regions through the gaps and the grooves.
    Type: Grant
    Filed: September 23, 2011
    Date of Patent: October 7, 2014
    Assignee: National Chung-Hsing University
    Inventors: Dong-Sing Wuu, Ray-Hua Horng
  • Patent number: 8841388
    Abstract: The present invention provides novel phosphinated compounds of monofunctional, bifunctional, multifunctional phenols represented by the following formulae and their derivatives, and preparation methods thereof:
    Type: Grant
    Filed: July 5, 2012
    Date of Patent: September 23, 2014
    Assignee: National Chung Hsing University
    Inventors: Ching-Hsuan Lin, Yu-Wei Tian
  • Patent number: 8815069
    Abstract: A disposable capillary electrophoresis detecting device includes a fixing device, a capillary electrophoresis microchip, and an electrochemical sensor microchip. The fixing device includes two chip-fixing bases having a first chip-holding cavity horizontally arranged and a second chip-holding cavity vertically arranged. The second chip-holding cavity is substantially perpendicular to the first chip-holding cavity and faces an end portion thereof. The capillary electrophoresis microchip is horizontally placed in the first chip-holding cavity. The electrochemical sensor microchip is vertically placed in the second chip-holding cavity. In the electrochemical sensor microchip, a patterned insulation layer is located on a detecting electrode, exposes a sensor area of the detecting electrode, and is extended to two sides of the sensor area.
    Type: Grant
    Filed: July 16, 2013
    Date of Patent: August 26, 2014
    Assignee: National Chung Hsing University
    Inventors: Ching-Chou Wu, Yi-Tong Pan
  • Patent number: 8808522
    Abstract: A method for forming an oxide film by plasma electrolytic oxidation includes a first step of placing an anode, which is a substrate with a conductive nitride film, and a cathode into an electrolyte of which the temperature range is from 20° C. to 100° C., and a second step of applying a voltage ranging from 50 V to 1000 V to the anode and cathode to finally form an oxide film on a surface of the conductive nitride film of the anode. The oxide film can be formed more rapidly than the prior art and has excellent crystallinity.
    Type: Grant
    Filed: September 7, 2011
    Date of Patent: August 19, 2014
    Assignee: National Chung Hsing University
    Inventors: Fu-Hsing Lu, Jhu-Ling Zeng, Huan-Ping Teng
  • Patent number: 8808523
    Abstract: A method for forming a ZrO2 oxide film by plasma electrolytic oxidation includes a first step of placing an anode, which is a substrate with a ZrN film, and a cathode into an electrolyte of which the temperature range is from 65° C. to 75° C. Said electrolyte contains barium acetate or barium hydroxide ranging from 0.3 M to 0.7 M and sodium hydroxide or potassium hydroxide ranging from 1.5 M to 2.5 M. The method includes a second step of applying a voltage ranging from 50 V to 1000 V to the anode and cathode to finally form a ZrO2 film on a surface of the ZrN film of the anode. A DC power supply, an AC power supply, unipolar pulse power supply or bipolar pulse power supply is applied to said anode and cathode in constant-voltage mode or constant-current mode. The oxide film can be formed more rapidly than the prior art and has excellent crystallinity.
    Type: Grant
    Filed: July 30, 2013
    Date of Patent: August 19, 2014
    Assignee: National Chung Hsing University
    Inventors: Fu-Hsing Lu, Jhu-Ling Zeng, Huan-Ping Teng
  • Patent number: 8791229
    Abstract: A series of novel phosphorus-containing compounds having the following formula is provided: in which: R1-R4, A, Q and m are as defined in the specification. A process for the preparation of the compound of formula (I) is also provided. A polymer of formula (PA), and preparation process and use thereof are further provided. A polymer of formula (PI), and preparation process and use thereof are also provided.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: July 29, 2014
    Assignees: Chang Chun Plastics Co., Ltd., National Chung Hsing University
    Inventors: Ching-Hsuan Lin, Tsung Li Lin, Yu-Ting Fang, Kuen-Yuan Hwang, An-Pang Tu
  • Patent number: 8785947
    Abstract: A semiconductor substrate includes: a base layer; a sacrificial layer that is formed on a base layer and that includes a plurality of spaced apart sacrificial film regions and a plurality of first passages each of which is defined between two adjacent ones of the sacrificial film regions. Each sacrificial film region has a plurality of nanostructures and a plurality of second passages defined among the nanostructures. The second passages communicate spatially with the first passages and have a width less than that of the first passages. An epitaxial layer is disposed on the sacrificial layer.
    Type: Grant
    Filed: December 28, 2009
    Date of Patent: July 22, 2014
    Assignee: National Chung-Hsing University
    Inventors: Dong-Sing Wuu, Ray-Hua Horng, Chia-Cheng Wu, Po-Rung Lin
  • Publication number: 20140199420
    Abstract: The present invention is related to a Toona sinensis extract for antibacterial. The Toona sinensis extract has the ability to inhibit growth or reproduction of bacteria and also to prevent corruption, color change and acidification of foods. So that, it can replace commercial ingredients and be applied to antibacterial, pharmaceutical composition or preservative that can prevent food corruption.
    Type: Application
    Filed: January 3, 2014
    Publication date: July 17, 2014
    Applicant: National Chung Hsing University
    Inventor: Deng-Cheng LIU
  • Patent number: 8771752
    Abstract: A composition for preventing and treating fatty liver is disclosed. The composition includes a lactoferrin and a trivalent chromium compound. The trivalent chromium compound of the present invention is selected from the group consisting of chromium (III) chloride hexahydrate, chromium (III) chloride, chromium (III) acetate, chromium (III) sulfate, chromium picolinate, chromium nicotinate, chromium GTF, chromium yeast extract, other inorganic salts of trivalent chromium, other organic salts of trivalent chromium, and combinations thereof. The composition of the present invention can provide a beneficial effect in preventing and treating fatty liver by effectively reducing multiple risk factors of fatty liver disease.
    Type: Grant
    Filed: November 21, 2011
    Date of Patent: July 8, 2014
    Assignee: National Chung Hsing University
    Inventors: Frank Chiahung Mao, Wen-Ying Chen
  • Patent number: 8765580
    Abstract: A method for fabricating semiconductor devices includes: (a) forming a layered structure that includes a temporary substrate, a plurality of spaced apart sacrificial film regions on the temporary substrate, and a plurality of valley-and-peak areas among the sacrificial film regions; (b) growing laterally and epitaxially an epitaxial film layer over the sacrificial film regions and the valley-and-peak areas, wherein gaps are formed among the epitaxial film layer and the valley-and-peak areas; (c) forming a conductive layer to contact the epitaxial film layer; (d) forming a plurality of grooves to divide the epitaxial film layer and the conductive layer into a plurality of epitaxial structures on the temporary substrate; and (e) removing the temporary substrate and the sacrificial film regions from the epitaxial structures by etching the sacrificial film regions through the gaps and the grooves.
    Type: Grant
    Filed: September 23, 2011
    Date of Patent: July 1, 2014
    Assignee: National Chung-Hsing University
    Inventors: Dong-Sing Wuu, Ray-Hua Horng
  • Patent number: 8759028
    Abstract: Disclosed herein is a process for producing a target protein, in which a recombinant polynucleotide is constructed to encode a fusion protein including: (i) an anchoring protein that includes a N-terminal amino acid sequence of an ice nucleation protein, so that the fusion protein, once expressed in the host cell, is directed by the anchoring protein to be anchored and exposed on the outer membrane of the host cell; (ii) the target protein; and (iii) a self-splicing protein that includes a first end fused with the anchoring protein and a second end fused with the target protein, wherein the self-splicing protein includes a N-terminal or C-terminal amino acid sequence of an intein protein at the second end thereof, such that upon an environmental stimulus, the self-splicing protein exerts a self-cleavage at the second end thereof to release the target protein from the fusion protein.
    Type: Grant
    Filed: October 28, 2011
    Date of Patent: June 24, 2014
    Assignee: National Chung-Hsing University
    Inventors: Yung-Chuan Liu, Jiun-Yan Wu, Chia-Chi Lin
  • Publication number: 20140120173
    Abstract: The present invention discloses a novel milk-fermented product comprising a group of peptides. The peptides are composed from no. 1 to no. 7 of the figure that is selected from the group consisting of FIG. 11 to FIG. 18. And the novel milk-fermented product is used for suppressing the reduction of bone mineral density. Therefore, the novel milk-fermented product could be a component of foods, nutrient supplement or medicine for treating or preventing osteoporosis.
    Type: Application
    Filed: October 26, 2012
    Publication date: May 1, 2014
    Applicant: National Chung Hsing University
    Inventors: Chuan-Mu Chen, Hsiao-Ling Chen
  • Publication number: 20140088283
    Abstract: A series of novel phosphorus-containing compounds having the following formula is provided: in which: R1-R4, A, Q and m are as defined in the specification. A process for the preparation of the compound of formula (I) is also provided. A polymer of formula (PA), and preparation process and use thereof are further provided. A polymer of formula (PI), and preparation process and use thereof are also provided.
    Type: Application
    Filed: October 31, 2013
    Publication date: March 27, 2014
    Applicants: National Chung Hsing University, Chang Chun Plastics Co., Ltd.
    Inventors: Ching-Hsuan LIN, Tsung Li Lin, Yu-Ting Fang, Kuen-Yuan Hwang, An-Pang Tu
  • Patent number: 8680554
    Abstract: A method for making an epitaxial structure includes: (a) providing a sacrificial layer on a temporary substrate, the sacrificial layer being made of gallium oxide; and (b) growing epitaxially an epitaxial layer unit over the sacrificial layer.
    Type: Grant
    Filed: December 20, 2011
    Date of Patent: March 25, 2014
    Assignee: National Chung-Hsing University
    Inventors: Dong-Sing Wuu, Ray-Hua Horng, Tsung-Yen Tsai
  • Patent number: 8603886
    Abstract: A method for fabricating an epitaxial structure includes: (a) forming over a temporary substrate a patterned sacrificial layer that partially exposes the temporary substrate; (b) growing laterally and epitaxially a temporary epitaxial film over the patterned sacrificial layer and the temporary substrate; (c) forming over the temporary epitaxial film an etching-stop layer; (d) forming an epitaxial layer unit over the etching-stop layer; (e) removing the patterned sacrificial layer using a first etchant; and (f) removing the temporary epitaxial film using a second etchant.
    Type: Grant
    Filed: December 20, 2011
    Date of Patent: December 10, 2013
    Assignee: National Chung-Hsing University
    Inventors: Dong-Sing Wuu, Ray-Hua Horng, Tsung-Yen Tsai
  • Patent number: 8598307
    Abstract: A series of novel phosphorus-containing compounds having the following formula is provided: in which: R1-R4, A, Q and m are as defined in the specification. A process for the preparation of the compound of formula (I) is also provided. A polymer of formula (PA), and preparation process and use thereof are further provided. A polymer of formula (PI), and preparation process and use thereof are also provided.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: December 3, 2013
    Assignees: Chang Chun Plastics Co., Ltd., National Chung Hsing University
    Inventors: Ching-Hsuan Lin, Tsung Li Lin, Yu-Ting Fang, Kuen-Yuan Hwang, An-Pang Tu