Abstract: Doppler principle has been widely applied to calculate the velocity of the object in motion. In medical ultrasonic imaging, it can be used to detect blood flow or myocardial motion. However, due to the inherent limitation of the Doppler effect, the measured velocity is only the projection of the actual velocity onto the ultrasound beam direction instead of the actual velocity. In previously proposed methods for measuring or correcting the Doppler angles, some need manual correction, others use complicated algorithms. They are either inconvenient to use or difficult to implement in current systems. In the method of Doppler motion detection with automatic angle correction according to the instant invention, it focuses on the relation between the Doppler angle and signal bandwidth to compute the Doppler angle by efficient correlation processing. Specifically, it uses variance of the Doppler signal to approximate square of the Doppler bandwidth.

Abstract: The invention provides a novel polymer light-emitting diode (LED) which can emit near white light with a broad spectrum, which LED comprises a transparent electrode as an anode, a metal electrode as a cathode, an organic light-emitting layer, and a hole transport layer and/or an electron transport layer, wherein the organic light-emitting layer contains a blend of a blue light-emitting poly (paraphenylene vinylene) copolymer and a red light-emitting alkoxy-substrituted PPV derivative in an appropriate relative ratio, such that, the novel LED can emit sun light-like yellowish white light with an broad electroluminescent spectrum covering the whole range of visible light without varying as the voltage increased. And wherein, by virture of introducing a hole transport layer and/or electron transport layer, the turn-on voltage of the device can be lowered and emission efficiency thereof is increased.

Abstract: The invention is to develop a high-speed low power consumption resonant tunneling element--a superlatticed negative-differential-resistance (NDR) functional transistor. The proposed element exhibits amplification and obvious NDR phenomena simultaneously. In this element, the emitter region includes 5-period GaInAs/AlInAs super lattice resonant tunneling and emitter layers. Since the emitter--base interface is of homojunction, the collector--emitter offset voltage (V.sub.CE, offset) may be lowered down significantly. In addition, the produced infinitesimal potential (.DELTA.Ev) at GaInAs/AlInAs interface due to heterojunction in discrete valence bands may be applied as barriers to prohibit holes flow from base towards emitter. By doing so, the base current is remarkably depressed so as to elevate efficiency of emitter injection as well as current gain.

Abstract: An active pixel sensor is used to replace a charge coupled device (CCD) image sensor. The active pixel sensor may be operated in a low voltage environment and the power consumption is lower than that in the conventional CCD image sensor and the CMOS active pixel sensor which is now developed by current industry. The active pixel sensor of the present invention has a lower cost and may be applied to a portable system.

Abstract: A novel material Si.sub.X C.sub.y N.sub.z, having a crystal structure similar to that of a.Si.sub.3 N.sub.4 with carbon atoms substituting most of the Si sites, is synthesized in crystalline form onto crystalline Si substrates by microwave plasma enhanced decomposition of carbon, silicon and nitrogen containing gasses.

Abstract: The new diamine, "3,3',5,5'-tetramethyl-2,2-bis[4-(4-amino-phenoxy)phenyl]propane" was synthesized and used to prepare high performance soluble engineering plastics by polycondensation. The polymer can be polyamides, polyimides or poly(amide-imide)s. These polymers exhibit excellent solubility, processability, heat resistance and mechanical performance.

Abstract: This invention provides a geometrical structure configuration of maglev forces in a maglev rotational bearing apparatus. The bearing apparatus uses the magnetic forces as the suspension support for the rotational shaft, and utilizes a radial maglev support module to provide two maglev constraint forces perpendicular to and crossing on the axis of rotating shaft and an axial maglev support module to provide three maglev constraint forces parallel to the axis but non-coplanar. From the viewpoint of kinematical geometry, this machine has five linearly independent constraint forces so that the main axis is allowed to be suspended without contact and friction with static elements, and the suspension force in axial direction is better than currently available maglev bearings. The rotational shaft can be driven by a motor to perform high-speed rotational motion with noises free and vibrations free.

Abstract: A contact process interconnects poly-crystal silicon layer, and more particularly, this process dramatically decreases the voltage drop within a poly-crystal silicon layer. The advantages of the process include not only improvement in the interface quality of Poly-Si/SiO2 to decrease the junction damage but also do not increase its process complexity and its mask number during the fabrication of poly-crystal silicon thin-film SRAM to meet high integration requirement in VLSI.

Abstract: Structure of a wide voltage operation regime double heterojunction bipolar transistor, specifically a modified InGaP/GaAs double heterojunction bipolar transistor featuring a very broad collector-emitter voltage operation range, an invention of high speed, low power consumption and high breakdown voltage rated microwave power transistor. Unique in the incorporation of In.sub.0.49 Ga.sub.0.51 P collector layer, GaAs delta-doping sheet and undoped GaAs spacer in the collector zone. The introduction of a spacer with a delta doping sheet into the effective base-collector heterojunction serves to eliminate potential spike from appearing at base-collector interfacing any more, thus effectively precludes electron blocking effect. In the emitter zone the inventive design comprises a five-period In.sub.0.49 Ga.sub.0.

Abstract: The present invention discloses an improved structure for a mortise lock comprising a lock body, a lock core, a plurality of spring washers, a plurality of straps and a latch in the lock body. Each spring washer has a curved portion to hook onto the washer holding slot, a claw to hook onto the strap tenon or the washer holding slot and a rim slot to forcibly contact the positioning pin and indirectly hold the strap tenon. With such mechanism a resilient force may be produced to prevent the straps from being shifted out of their positions due to vibration even after the lock is opened. This improved structure makes the mortise lock of the present invention can not only be used on static objects such as telephone sets or mail boxes, but also effectively applicable to any moving object.

Abstract: The present invention is related to a self-aligned manufacturing method of a thin film transistor for forming a single-crystal bottom-gate and an offset drain. The main object of the present invention is to disclose two manufacturing methods to attain the self-aligned manufacturing method of a thin film transistor for forming a single-crystal bottom-gate and an offset drain. In the first method, a photoresistor and a silicon nitride are used to form a dual stack as a mask, further a large-angle ion implant is used to form a thin film transistor with a single-crystal bottom-gate and an offset drain. In the second method, the source side is protected by a dual stack formed by a P+ polysilicon layer which may be discarded selectively and a silicon nitride and an insulation spacer of sidewall in order to selectively discard the silicon nitride on the drain side, thus the object of a thin film transistor with a single-crystal bottom-gate and an offset drain is obtained.

Abstract: The present invention is related to a circuit of SRAM with current-mode write-circuits. The current-mode write-operation is through the equalization technique in advance to equalize the potential in the memory cell by using the equalization transistor. After the equalization operation, the current conveyor should pass the differential current of data into the memory cell in order to make the differential current to pull out the differential voltage through the memory cell's strong positive feedback. The present invention has seven transistors in the memory cell that is different from the conventional memory cell with six transistors. Besides, the size of each transistor can also be different from the conventional design.

Abstract: The present invention provides a novel crystalline material Si.sub.x C.sub.y N.sub.z possessing a direct optical band gap of 3.8 eV. Many optoelectronic applications, such as blue light emitting diode and laser diode, may utilize this property.

Abstract: This invention provides metallic thin film chemical mechanical polishing slurry compositions having improved suspension stability. The slurry contains 2.5-10% by weight of alumina powder and 2-20% by volume of phosphoric acid (80% concentration ) solution, and using potassium hydroxide to adjust its pH to 1-6 so as to increase suspension ability of the alumina powder in the aqueous slurry. The polishing slurry compositions can further combine with suitable oxidizers such as hydrogen peroxide, ferric nitrate and so on to be appropriately used for chemical mechanical polishing metallic thin film in the process of manufacturing semiconductor in order to control abrasion rate and unevenness more easily.

Abstract: The present invention is related to a high efficiency indium gallium phosphide NIP solar cell, wherein an intrinsic layer between a emitter layer and base layer can suppress the Zn memory effect and interdiffusion and also a higher doping concentration in n-type AlInP window layer can be attained and the lifetime of minority carriers also increase for improving the conversion efficiency, thus the present invention may be used in the superhigh efficiency tandom cell so as to be used in the space or in earth as an regenerated energy.

Abstract: The invention relates to a process of producing polybutylene terephthalate by direct esterification and then melt polycondensation, characterized in that a specific catalyst composition is used, said catalyst composition comprising an organotitanium compound as primary catalyst in an amount of 0.01 to 1.0% by weight of terephthalic acid; and an alkaline metal salt of borate, pyroborate or metaborate as secondary catalyst in an amount of 0.001 to 1.0% by weight of terephthalic acid. By using said catalyt composition, amount of THF by-product generated can be reduced more than 30%, and the reaction rate of esterification can be increased over 20%.(FIG.

Abstract: The invention relates to a water-soluble self-acid-doped polyaniline derivatives and in particular, to a water-soluble self-acid-doped polyaniline derivatives obtained by reacting polyaniline derivatives with 2-sulfobenzoic anhydride derivatives, which is composed of structural unit having following formula (I): ##STR1## wherein, M may be H, Na, K or NH.sub.4 ;R.sub.1, R.sub.2, R.sub.3, R.sub.4 may be --H, --R.sub.o, --F, --Cl, --Br, --OR.sub.o, --COR.sub.o, --OCOR.sub.o, --NHCOR.sub.o, --NO.sub.2, --COOR.sub.o, --CN, --COOH;Q may be --H, --Ro, --F, --Cl, --Br, --OR.sub.o, --COR.sub.o, --OCOR.sub.o, --NHCOR.sub.o, --NO.sub.2, --COOR.sub.o, --CN, --COOH;R.sub.o is a C.sub.1 -C.sub.4 alkyl;n is an integer of 0 to 4; andx+y+2z.ltoreq.1.0, and x.gtoreq.0.1;and a process for preparing the same.The water-soluble self-acid-doped polyaniline derivatives exhibits some characteristics as follows:(1) a high water solubility;(2) a self-acid-doped property;(3) a high conductivity which may be up to 10.sup.-3 -10.sup.

Abstract: The invention relates to a Bismaleimide-Triazine resin (BT resin ) and production method thereof and in particular, a series of novel BT resin prepared by reacting a novel bismaleimide with various aromatic cyanate esters. By combining said novel bismaleimide monomer with various proportions of cyanate esters having different structures, BT resins having various processing temperature conditions can be formulated, which, after polymerizing and crosslinking, can provide materials with various thermal stability, dielectric constants, and mechanical properties for various applications.

Abstract: A rapid, highly reproducible and sensitive technique has been successfully developed for sexing the cow embryos, by method of polymerase chain reaction (PCR) against the amelogenin (bAML) genes located on both X- and Y-chromosomes of the Holstein dairy cattle. Results from DNA sequence analysis showed that there was only 45% homology between the intron 5 of AMLX and AMLY genes. Based on these sequences a pair of sex-specific primers, pbAML5XY(+) and pbAML5XY (-),were designed allowing to amplify a single fragment of 476-bp from the female cattle and two fragments of 476-bp and 341-bp from the male ones, respectively. The most important feature is that the precise sensitivity of sex-determination was confirmed to be reached as minimum template as trace amount of genomic DNA content in either a single lymphocyte or a single blastomere isolated from cow embryo at day-6 to day-7.

Abstract: The linear slope range of the axial response curve of confocal imaging is utilized to obtain nanometer depth resolution, a sample which is at the top of a piezo-electric translator (PZT) 6, using a highly spatial-coherent light source, high numerical aperture focusing devices, a pinhole, and an optical detector to produce the axial response of confocal imaging Before the measurement, the calibration of height and resolution must be done by fitting the linear slope range of the axial response curve to a straight fitting line. While measuring surface profiles, the sample height is first finely adjusted to the linear slope range, and a two-dimensional scanning is then performed on the plane vertical to the detecting light beam. The signal of optical detector which represents the variation of the surface height, is then recorded. In this way, a three-dimensional image of the sample surface profile can be obtained with nanometer depth resolution.