Abstract: The invention relates to the structure of the camel-gate field-effect transistor with multiple modulation-doped channels. The device structure, from the bottom to the top in succession, includes the substrate, the buffer layer, the multiple modulation-doped channels, the thin and complete depletion layer, and the ohmic contact layer. The transistor is characterized by a camel-gate diode, which is composed of the multiple modulation-doped channels, the thin and complete depletion layer and the ohmic contact layer. The gate structure may achieve the high potential height between the gate electrode and the source electrode as well as the high breakdown voltage performance. Furthermore, the use of multiple modulation-doped channels, made of n-type GaAs materials with different thickness and doped concentration, can exhibit excellent properties of high output current, large and linear transconductances.

Abstract: The present invention relates to a high pressure servo-mechanism to be installed in a civil or architectural structure to alleviate dynamic reaction of the protected structure and to prevent the possible damages to the structure by earthquakes or typhoons thus assuring the security of human lives and properties inside the structure.

Abstract: A double edge triggered flip-flop is made up of six switches and four inverters. The input data is supplied to one end each of first and second ones of the six switches, the other ends of the first and second switches being separately connected to the inputs of a first and second of the four inverters. The outputs of the first and second inverters are separately connected to the input of the third and fourth inverters via the third and fourth switches. The third inverter serves as a common feedback inverter with the output of the third inverter is connected through the fifth and sixth switches to respective ends of the first and second switches, and the output of the fourth inverter forms the output of the present invention. The first, third, and fifth switches thus form the up-loop for the double edge triggered flip-flop and the second, fourth, and sixth switches forming the down loop, with the two loops sharing the third and fourth inverters.

Abstract: The present invention is to develop a proper new process for deep submicron PMOSFET. The characteristic of this process is using Si:Ge:B layer to deposit on the poly-Si film, then go through oxidation or diffusion method to diffuse the boron ion into the poly-Si gate in order to form p-type poly-Si gate. This layer can be etched selectively after spacer etching and reserve a concave gate structure. Thus, it can combine with selective W-CVD to form an excellent p-type poly-Si PMOSFET.

Abstract: A new type of the compact freewheel body for bicycle includes a freewheel casing, a ball seat, a hub, two rows of steel balls, an adjusting ring and a clutch located in the hub. The ball ring at the top of a convention freewheel casing is moved to the bottom to become a ball seat. The distance between two rows of steel balls is increased. The freewheel body can be made more compact. Smaller gear seat may be used and thus increasing the speed ratio and improving mechanical strength of the gear set. The wobbling of the freewheel can be effectively reduced to make the freewheel running and gear shifting smoother and more reliable.

Abstract: A rotary joint for delivering a mixed fluid from a radial inlet of a joint element axially through a high speed rotating shaft. Leakproof protection is first realized by one side of a wear block being compressed against an end face of the shaft. A spring presses a washer and an O-shaped ring against the other side of the wear block to prevent leakage and filter most solid impurities. Leakproof protection is also realized by covering the shaft with a seal to isolate leaking fluid from the first protection.

Abstract: A process for suppressing boron penetration in BF.sub.2.sup.+ -implanted P.sup.+ -poly-Si gates provides a nitrided layer between the oxide layer and poly-Si through use of inductively-coupled nitrogen plasma (ICNP) to form an energy barrier which the boron ion can hardly penetrate. The process includes the steps of growing an oxide layer by washing the silicon, introducing nitrogen gas into the inductively-coupled plasma (ICP) system and carrying out nitrogen plasma surface treatment at RF power of 150w to 250w; stacking polysilicon of 3000 .ANG. low pressure chemical vapor deposition (LPCVD) system; implanting BF.sub.2.sup.+ at 5.times.10.sup.15 atom/cm.sup.2 and 50 KeV; removing the surface oxide layer by annealing at 900.degree. C. for a time; and plating Al to form a MOS capacitor and measuring electric properties.

Abstract: An inertial impactor with a specially designed impaction plate has a nozzle protruding from a nozzle plate, and an impaction plate formed with a conical recess covered by an orifice plate and a circular impaction plane at the bottom of the recess having a diameter slightly greater than that of the diameter of the nozzle. The impactor reduces loss of particles due to rebounding or blowing off particles from the impaction plate so as to increase particle collection efficiency and capacity, permit a quick accumulation of the particles on the bottom of the conical recess, and increase collection efficiency accordingly.

Abstract: A method of producing a Mn-Al thin film with excellent magnetic properties for magnetic recording medium use. The method includes magnetron sputtering to form a selective composition of Mn-Al .epsilon.-phase thin film on a low temperature substrate, then applying a heat treatment under the controlled conditions for a desirable temperature and time period, thereby to transform the .epsilon.-phase film to a .tau.-phase film with high value of saturation magnetization and coercivity.

Abstract: The composition includes dl-tetrahydropalmatine mixed with its carrier having pharmaceutical therapeutical effect for treating hyperthyroidism. The dl-tetrahydropalmatine may be purified from a chloroform layer extracted from a Corydalis tuber.

Abstract: A process for making D-aminoacylse includes adding 1% N-acetyl-DL-amino acid preferably N-acetyl-DL-methionine and N-acetyl-DL-leucine in a culturing medium incubated with bacteria selected from the strain of Alcaligenes faecalis for culturing the bacteria and for inductively promoting an enzyme reaction to produce the D-aminoacylase which is able to hydrolyze D-amino acids and unable to hydrolyze L-amino acids.

Abstract: A process for making L-aminoacylase includes a cultivation of microorganism selected from a specy of Alcaligenes, especially the Alcaligenes denitrificans DA 181, and a separation of a produced L-aminoacylase from the bacterial cells for obtaining the L-aminoacylase which may be further purified for the production of L-amino acid. The acylase made by such a process may have an increased stability, beneficial for its commercial and medical values.

Abstract: This invention refer to chelerythrine, a considerably effective drug in the prevention and therapy of the thrombosis, which is a quaternary amine derivative and a major component of the organic solvent soluble extract of Zanthoxylum simulans. The effects of chelerythrine on the thromboembolism and the constriction of the blood vessel are also examined.

Abstract: Nonanoyl vanillylamide succinate was synthesized from synthetic capsaicin (nonanoyl vanillylamide) and succinic anhydride. The antinociceptive and cardiovascular effects of nonanoyl vanillylamide and its derivatives were investigated. We found that nonanoyl vanillylamide and nonanoyl vanillylamide succinate strongly inhibited the writhing response, led to the vascular smooth muscle relaxation, produces bradycardia and a fall of blood pressure. The potency of nonanoyl vanillylamide succinate was found to be slight greater than that of nonanoyl vanillylamide, when compared with the same molar dose/kg of their administrations.