Abstract: An all-inorganic up-conversion display includes a photodiode array and a light emitting diode array. The photodiode array includes a first substrate having a first conductivity type, a buffer layer formed on a first surface of the first substrate, an absorption layer formed on the buffer layer, a cap layer formed on the absorption layer, a first patterned passivation layer formed on the cap layer and exposing an array of contact regions of the cap layer, a common first electrode connected to the first substrate, an array of second electrodes, and an array of first solder bumps. The light emitting array includes a second substrate, an array of luminous chips, a common third electrode, a second patterned passivation layer, and an array of second solder bumps. Each of the first solder bumps is flip-chip bonded to a corresponding one of the second solder bumps.

Abstract: A laser colored product, a laser coloring method therefor, and a laser coloring system using the same are provided. The laser coloring method comprises the following steps. First, provide a processing workpiece which includes a processing part, and the processing part includes a pattern region. The processing part within the pattern region includes an inner portion and an outer layer, and the outer layer includes metal materials. Use the laser coloring system to irradiate the outer layer of the pattern region in stages to convert the outer layer of the pattern region into a metal color pattern layer. The metal color pattern layer includes metal materials or metal compounds of metal materials, and the metal color pattern layer includes a plurality of pixel units arranged in arrays, wherein each of the pixel units includes a pixel color, and each of the pixel units has a pixel width or a pixel length between 1 ?m to 500 ?m.

Abstract: A micro detector includes a substrate, a fin structure, a floating gate, a sensing gate, a reading gate and an energy sensing film. The fin structure is located on the substrate. The floating gate is located on the substrate, and the floating gate is vertically and crossly arranged with the fin structure. The sensing gate is located at one side of the fin structure. The reading gate is located at the other side of the fin structure. The energy sensing film is located on the sensing gate and is connected with the sensing gate. An induced charge is generated when the energy sensing film is contacted with an external energy source, and the induced charge is stored in the floating gate.

Abstract: A decoder includes a demultiplexer and a number (P) of ADCs, where P?2. The demultiplexer receives a to-be-decoded data signal that is in a PAM-2M format, and demultiplexes the to-be decoded data signal into a number (P) of demultiplexed data signals, where M?2. The ADCs respectively receive the demultiplexed data signals. One of the ADCs is an (M+1)-bit ADC, and converts the corresponding demultiplexed data signal into a digital first decoded signal that contains an M-bits wide data portion and a one-bit wide error portion. Each of the other one(s) of the ADCs is an M-bit ADC, and converts the corresponding demultiplexed data signal into a digital second decoded signal that contains an M-bits wide data portion.

Abstract: The present invention provides a preparing method of a polymer which is low-toxic, environmental-friendly, highly controllable, and low cost to obtain a polymer with high molecular weight. The preparing method comprises conducting a controlled radical polymerization process of monomer (Y). In the controlled radical polymerization process, organic compound (A) which has the formula (I) and radical initiator (B) are existing in a mole ratio (B/A) ranged from 0.5 to 25, wherein R1 is a hydrogen atom, alkyl group, aryl group, or hydroxyl group, the alkyl group can be alkyl having substituents or alkyl substituent, and the aryl group can be aryl having substituents or aryl substituent.

Abstract: A measuring device for measuring cardiopulmonary state comprises a sensor and a control module. The sensor comprises a substrate and a coil arranged on the substrate. The coil is configured to transmit a first electromagnetic signal towards the part to be measured, and receive at least a second electromagnetic signal generated by the induction of the first electromagnetic signal to generate an induction signal. The control module is coupled to the coil. The control module includes a signal generating unit configured to provide an AC signal to the coil, a filtering unit coupled to the coil, and a processing unit. The filtering unit has at least a first filtering frequency band and a second filtering frequency band. The induction signal is divided into at least a first part and a second part aft?r pa'sing through the filtering unit. The processing unit calculates at least one feature signals of the state of the subject's heart or lungs according to at least one of the first part and the second part.

Abstract: A vapor chamber device includes a first casing, a first capillary structure, and a second casing. The first casing includes a first plate portion, multiple first protrusions, and a first side wall. The first capillary structure is disposed above an inner surface of the first plate portion and surrounds the first protrusions. The second casing is stacked on the first casing, and the second casing includes a second plate portion, multiple second protrusions, and a second side wall. The first side wall is connected to the second side wall, and multiple steam passages are formed between the second protrusions. The second plate portion includes multiple connecting regions yielded by the second protrusions, and the first protrusions are connected to the connecting regions. The second protrusions rest against the first capillary structure.

Abstract: A heterogeneous integration capacitor and a metal-oxide-metal (MoM) capacitor are provided. The heterogeneous integration capacitor has a first electrode and a second electrode, and includes a substrate, a semiconductor capacitor, the MoM capacitor, and a metal-insulator-metal (MiM) capacitor. These capacitors are sequentially formed on the substrate, and are formed as connected in parallel.

Abstract: An infrared light emitter includes a substrate, a first light-emitting layer, a blocking layer, and a second light-emitting layer. The second light-emitting layer is disposed on the substrate, the blocking layer is disposed on the second light-emitting layer, and the first light-emitting layer is disposed on the blocking layer. The first light-emitting layer, the blocking, and the second light-emitting layer form a P-N-P junction or an N-P-N junction. The first light-emitting layer and the blocking layer form a first electroluminescent unit, and the blocking layer and the second light-emitting layer form a second electroluminescent unit. The first electroluminescent unit and the second electroluminescent unit build two back-to-back bipolar junctions.

Abstract: A method includes forming an epitaxial stack over a semiconductor substrate, wherein the epitaxial stack comprises a plurality of first semiconductor layers and a plurality of second semiconductor layers alternately arranged over the semiconductor substrate, wherein the first semiconductor layers have a lower germanium concentration than a germanium concentration of the second semiconductor layers; patterning the epitaxial stack into a fin; forming a gate structure over a channel region of the fin, wherein the gate structure is in contact with the first semiconductor layers and the second semiconductor layers within the channel region of the fin; and forming source/drain regions on opposite sides of the channel region of the fin.

Abstract: A data poisoning method and a data poisoning apparatus are provided. In the method, a training dataset and a validation dataset are retrieved. A perturbation is randomly initiated and added to data in the training dataset to generate poisoned training data. Values of multiple kernel functions of the poisoned training data and the validation dataset are computed by using kernel functions in a Gaussian process, and used to compute a mean of the Gaussian process on the validation dataset. A loss between the mean and the data in the validation dataset is computed by using a loss function of the Gaussian process, and used to generate an objective function that maximizes the loss. The objective function is solved to compute the perturbation that can maximize the loss.

Abstract: A high chromium and silicon-rich corrosion resistant steel is disclosed, which comprises, in weight percent: 22-30% Cr, 2-10% Si, and the balance Fe and incidental impurities, of which a content amount of Cr and Si is less than 37%. Experimental data reveal that, samples of the high chromium and silicon-rich corrosion resistant steel all have a pitting potential greater than 0.8 V and a hardness in a range between HV170 and HV500 in the as-homogenized condition. As a result, experimental data have proved that the high chromium and silicon-rich corrosion resistant steel of the present invention can replace conventional stainless steels having poor pitting resistance like type 304 and type 316 L, and then be adopted for the applications of components and/or structural parts requiring high corrosion resistance.

Abstract: A memory device includes a current source and a memory array. The current source is configured to provide a current to a first node. The memory array is coupled to the current source at the first node. The memory array includes memory cells. First terminals of the memory cells are coupled to the first node. Each of the memory cells has a first resistance in response to having a first data value, and has a second resistance in response to having a second data value. The second data value is N times the first data value. The second resistance is approximately one-Nth of the first resistance, for N being a positive integer larger than one. A method of operating a memory device is also disclosed herein.

Abstract: The present disclosure provides a decellularized extracellular matrix, the preparation process and uses thereof. The decellularized extracellular matrix of the present disclosure is derived from a three-dimensional cell spheroid, and the decellularized extracellular matrix has a three-dimensional spherical structure. The decellularized extracellular matrix of the present disclosure can be used to prepare a biomedical material scaffold for promoting tissue regeneration and repair.

Abstract: A two-dimensional semiconductor device and an electrode used therein are provided. The material of the contact electrode is a semi-metal alloy, and the semi-metal alloy is composed of several semi-metal elements or at least one semi-metal element and an alloy material thereof. The two-dimensional semiconductor device includes a substrate, a two-dimensional semiconductor material layer formed on the substrate, and electrodes formed on the two-dimensional semiconductor material layer. The electrodes include the contact electrode and the metal electrode, and the contact electrode is between the metal electrode and the two-dimensional semiconductor material layer, so that the semi-metal alloy forms a space gap slightly smaller than a Van der Waals distance on top of the two-dimensional semiconductor to ensure the stability of the structure while preventing/minimizing the coupling of outer orbital electrons between the two-dimensional semiconductor and the electrode.

Abstract: A method of sparse edge encoding for an image is to be implemented by a computer. The computer stores an original image, and the original image has a plurality of pixels. The method includes a step of cross-correlating the pixels of the original image with a mask matrix to obtain a plurality of Laplacian charges (L-charges) respectively corresponding to the pixels. Those of the L-charges that correspond to those of the pixels which represent an edge of an object in the original image have greater absolute values than other L-charges of the L-charges. The mask matrix is a square matrix, and a sum of all elements of the mask matrix is zero.

Abstract: A vapor chamber system, includes a heat source and a vapor chamber device. The vapor chamber device includes a first casing, a second casing, a second capillary structure and a third capillary structure. The first casing includes a first plate, and a first capillary structure. The second casing is stacked on the first casing. The second capillary structure is disposed between the first capillary structure and the supporting posts of the second casing. The third capillary structure is disposed at a zone of the inner surface of the first plate, the zone is within a projection of the heat source projected onto the inner surface, and an area of the zone is smaller than an area of the projection of the heat source.

Abstract: This invention relates to processes and systems of rapid prototyping and production. Its features includes flexible material deposition along tangential directions of surfaces of a part to be made, thereby eliminating stair-shape surface due to uniform horizontal layer deposition, increasing width of material deposition to increase build up rate, applying the principles of traditional forming/joining processes, such as casting, fusion welding, plastic extrusion and injection molding in the fabrication process so that various industrial materials can be processed, applying comparatively low cost heating sources, such as induction heating and arc-heating. Additional features include varying width and size of material deposition in accordance with geometry to be formed and applying a differential molding means for improved shape formation and surface finishing.

Abstract: A lead-free metallic halide memristor is disclosed. The lead-free metallic halide memristor comprises a first electrode layer, an active layer and a second electrode layer, of which the active layer is made of a metallic halide material. Experimental data have proved that the lead-free metallic halide memristor possesses synaptic plasticity because of showing characteristics of short-term potentiation, short-term depression, long-term potentiation, long-term depression during the experiments. Therefore, the lead-free metallic halide memristor has significant potential for being used as an artificial synaptic element so as to be further applied in the manufacture of a reservoir computing chip.

Abstract: A neuromorphic system for switching between a multitude of functional operations includes a controlling unit and a neuron unit. The controlling unit provides a first input and a second input and regulates a multitude of bias currents. The neuron unit receives the bias currents. An input neuron group receives the first input and the second input. An excitatory neuron group is stimulated by the input neuron group. An inhibitory neuron group is electrically connected to the excitatory neuron group, and the inhibitory neuron group and the excitatory neuron group stimulate each other. An output neuron is electrically connected to the excitatory neuron group and stimulated by the excitatory neuron group to generate an output. The bias currents control the excitatory neuron group, the inhibitory neuron group and the output neuron to be in one of a high-activity state, a middle-activity state and a low-activity state.