Abstract: A charge-modulation element encompasses a p-type photoelectric-conversion layer, a n-type surface-buried region buried in an upper portion of the photoelectric-conversion layer configured to implement a photodiode with the photoelectric-conversion layer, a n-type modulation region buried in another part of the upper portion of the photoelectric-conversion layer configured to implement a part of the photodiode with the photoelectric-conversion layer, potential-control regions assigned in one of divided areas, n-type charge-accumulation regions configured to accumulate signal charges generated in the photodiode. Potentials in the modulation region and the surface-buried region are controlled by route-select signals applied to the potential-control regions so as to select one of the charge-transport routes, which transfers the signal charges toward one of the charge-accumulation regions.

Abstract: An A/D converter 1 includes a front stage A/D conversion unit (3) including a first A/D conversion unit (6) that receives an analog signal from a CMOS image sensor (100) and generates a first digital value (D1) and a first residual analog signal (VOPF) through a folding integration A/D conversion operation, and a second A/D conversion unit (7) that receives a first residual analog signal (VOPF) from the first A/D conversion unit (6) and generates a second digital value (D2) and a second residual analog signal (VOPC) through a cyclic A/D conversion operation, and a rear stage A/D conversion unit (4) that receives the second residual analog signal (VOPC) from the front stage A/D conversion unit (3) and generates a third digital value (D3) through an acyclic A/D conversion operation.

Abstract: The present invention provides a photoelectric conversion element and a solid-state image sensor, having a simple structure, a wide dynamic range, a high speed and a high sensibility, which includes a principal layer of a first conductivity type, a surface-buried region of a second conductivity type, selectively buried in an upper portion of the principal layer so as to implements a photodiode with the principal layer, a first charge-accumulation region of the second conductivity type, buried in the upper portion of the principal layer configured to accumulate first signal charges transferred from the surface-buried region, generated by the photodiode, and a second charge-accumulation region of the second conductivity type, buried in the principal layer configured to accumulate second signal charges transferred from the surface-buried region, generated by the photodiode, wherein a process including a first period, in which the first signal charges are transferred from the surface-buried region to the first ch

Abstract: There is provided a novel gelator containing a monourea derivative. A gelator comprising a compound of formula (1): wherein R1 is a linear or branched alkyl group having a carbon atom number of 2 to 20, a cyclic alkyl group having a carbon atom number of 3 to 20, or a linear or branched alkenyl group having a carbon atom number of 12 to 20; and Ar is a C6-18 aryl group unsubstituted or optionally substituted with at least one substituent selected from the group consisting of a C1-10 alkyl group, a C1-10 alkoxy group, a C6-18 aryloxy group, a halogen atom, a nitro group, a phenyl group, a C2-10 alkylcarbonyl group, and a C7-18 aralkyl group.

Abstract: An electromagnetic relay includes a fixed contact part including a fixed terminal and a fixed contact connected to the fixed terminal, a movable contact part including a movable contact spring and a movable contact connected to the movable contact spring, an armature to which the movable contact part is connected, an electromagnet configured to move the armature, a magnet configured to stretch an arc generated between the fixed contact and the movable contact, and a first arc extinguishing plate and a second arc extinguishing plate configured to extinguish the stretched arc. The fixed contact and the movable contact are disposed between the first arc extinguishing plate and the second arc extinguishing plate. The magnet is disposed between a first pair of the fixed contact part and the movable contact part and a second pair of the fixed contact part and the movable contact part.

Abstract: In a photoelectric-conversion element having a large light receiving region for a high-speed transfer, and a solid-state image sensor including the photoelectric-conversion element, the photoelectric-conversion element includes first to eighth charge read-out regions, which are provided at positions symmetric with respect to a center position of a light receiving region and first to eighth field-control electrodes, which are arranged on both sides of charge-transport paths extending from the center position of the light receiving region to the first to eighth charge read-out regions, respectively, and change depletion potentials of the charge-transport paths and the octuple charge-transfer channels.

Abstract: The present invention discloses immune function development promoters and growth promoters comprising CCL25. The development of immune functions in a subject can be promoted by ingesting an immune function development promoter according to the present invention. Moreover, growth of a subject can be promoted by ingesting a growth promoter according to the present invention.

Abstract: An electret element includes: an electret film that contains silicon oxide; and a protective film formed over the electret film and constituted of aluminum oxide deposited through an atomic layer deposition method.

Abstract: A pupil detection system according to an embodiment includes a vector calculation unit configured to calculate a plurality of candidate vectors each connecting a corneal sphere center and a pupil center by a stereo method based on a first pupil image of a subject which is picked up by a first camera and a second pupil image of the subject which is picked up by a second camera, and a determination unit configured to select, from among the plurality of candidate vectors, a candidate vector satisfying a vector condition in which an angle between the pupil center and a reference line is equal to or less than a predetermined threshold and determine that a pupil is located at a pupil center corresponding to the selected candidate vector.

Abstract: A display device (100) includes a spontaneous light emission-type display panel (10). The display device includes a plurality of pixels (P). The plurality of pixels each include a plurality of sub pixels including a red sub pixel (R), a green sub pixel (G) and a blue sub pixel (B). The display panel includes a red light emitting element (1r), a green light emitting element (1g), and a blue light emitting element (1b). Red light, green light and blue light respectively emitted by the red light emitting element, the green light emitting element and the blue light emitting element each have a spectrum half width of 10 nm or less. The plurality of sub pixels included in each pixel further include a yellow sub pixel (Ye). The display panel further includes a yellow light emitting element (1y) provided in an area corresponding to the yellow sub pixel. The yellow light emitting element emits yellow light having a dominant wavelength of 550 nm or greater and 600 nm or less.

Abstract: The invention shows a production apparatus for producing carbon nanotubes by the gas-phase catalysis process, comprising: a first chamber having a growth region that is a region in which carbon nanotubes are formed; a first temperature adjustment device capable of adjusting a temperature of the growth region in the first chamber; a pressure adjustment device capable of adjusting a pressure in the first chamber; a first feed device capable of feeding a carbon source to the growth region in the first chamber; a second temperature adjustment device capable of adjusting a temperature of a solid-phase iron family element-containing material disposed in the production apparatus; and a second feed device capable of feeding a gas-phase halogen-containing substance into the production apparatus so that the iron family element-containing material of which the temperature is adjusted to a predetermined temperature by the second temperature adjustment device can react with the halogen-containing substance.

Abstract: A semiconductor element includes a semiconductor region (11) of a first conductivity type, a buried charge-generation region (16) of a second conductivity type, buried in an upper portion of the semiconductor region (11) to implement a photodiode (D1) together with the semiconductor region (11) to generate charges, a charge-readout region (15) of the second conductivity type, provided in the semiconductor region (11) to accumulate the charges transferred from the buried charge-generation region (16), and a reset-performing region (12) of the second conductivity type, provided in the semiconductor region (11), a variable voltage is applied to the reset-performing region (12) to change the height of a potential barrier generated in the semiconductor region (11) sandwiched between the charge-readout region (15) and the reset-performing region (12) to exhaust the charges accumulated in the charge-readout region (15).

Abstract: A corneal reflection position estimation system according to an embodiment includes: an image acquisition unit configured to continuously acquire an image of an eye of a subject by controlling a camera equipped with a light source, the image acquisition unit being configured to acquire a plurality of pupil images taken by using light from the light source and then acquire one unilluminated image taken without using light from the light source; and an estimation unit configured to calculate positions of corneal reflection or corneal sphere centers, which correspond to the plurality of pupil images, as reference positions, calculate a movement vector of the corneal reflection or the corneal sphere center based on a plurality of the reference positions, and estimate the corneal reflection position in the unilluminated image based on at least the movement vector.

Abstract: An electret element includes: an electret film that contains silicon oxide; and a protective film formed over the electret film and constituted of aluminum oxide deposited through an atomic layer deposition method.

Abstract: A novel hydrogelator that contains a monourea compound having a sugar structure, which can be produced by a simple method, includes a compound of the following Formula [1]: (wherein Sg is a sugar group, A is a divalent linking group, and R is a linear or branched alkyl group having a carbon atom number of 1 to 15, a cyclic alkyl group having a carbon atom number of 3 to 15, a linear or branched alkenyl group having a carbon atom number of 2 to 15, or a C6-18 aryl group unsubstituted or substituted with at least one substituent selected from the group consisting of a C1-10 alkyl group, a C1-10 alkoxy group, a C6-18 aryloxy group, a halogen atom, a nitro group, a phenyl group, a C2-10 alkylcarbonyl group, and a C7-18 aralkyl group).

Abstract: The purpose of the invention is to identify a short-culm gene other than the sd1 gene and produce a short-culmed gramineous plant by utilizing a short-culm gene other than the sd1 gene. The present invention provides a method for producing a short-culmed gramineous plant utilizing gene d60 for shortening the culm of a gramineous plant, wherein the method for producing a short-culmed gramineous plant is characterized in that the expression of Os02g0280200 is suppressed. The present invention also provides a short-culmed gramineous plant and the like in which the expression of Os02g0280200 is suppressed.

Abstract: The invention shows a production method for carbon nanotubes. The production method comprises a first step of feeding at least one kind of gas-phase catalyst into a first chamber, the at least one kind of gas-phase catalyst being formed from an iron family element-containing substance and a halogen-containing substance that are contained in a first liquid; and a second step of forming the carbon nanotubes from a carbon source fed into the first chamber using a catalyst generated based on the gas-phase catalyst existing in the first chamber, wherein the first step includes vaporization of the first liquid, and the first liquid does not contain the carbon source.

Abstract: The present invention provides a photoelectric conversion element and a solid-state image sensor, having a simple structure, a wide dynamic range, a high speed and a high sensibility, which includes a principal layer of a first conductivity type, a surface-buried region of a second conductivity type, selectively buried in an upper portion of the principal layer so as to implements a photodiode with the principal layer, a first charge-accumulation region of the second conductivity type, buried in the upper portion of the principal layer configured to accumulate first signal charges transferred from the surface-buried region, generated by the photodiode, and a second charge-accumulation region of the second conductivity type, buried in the principal layer configured to accumulate second signal charges transferred from the surface-buried region, generated by the photodiode, wherein a process including a first period, in which the first signal charges are transferred from the surface-buried region to the first ch

Abstract: In a photoelectric-conversion element having a large light receiving region for a high-speed transfer, and a solid-state image sensor including the photoelectric-conversion element, the photoelectric-conversion element includes first to eighth charge read-out regions, which are provided at positions symmetric with respect to a center position of a light receiving region and first to eighth field-control electrodes, which are arranged on both sides of charge-transport paths extending from the center position of the light receiving region to the first to eighth charge read-out regions, respectively, and change depletion potentials of the charge-transport paths and the octuple charge-transfer channels.

Abstract: An actuator includes: an electrostatic actuation mechanism including a stationary electrode and a movable electrode; a first movable part driven by the electrostatic actuation mechanism; a first elastic support part that elastically supports the first movable part; an electret formed in at least one of the stationary electrode and the movable electrode; and a drive control unit that controls application of voltage to the electrostatic actuation mechanism. In the actuator a plurality of stable states are set in which the first movable part is positioned at a stable position at which an electrostatic force generated by the electret matches with an elastic force exerted by the first elastic support part or at a stable position near such stable position. By applying a voltage to the electrostatic actuation mechanism, the first movable part may be displaced from any stable position to another stable position.