Abstract: The invention provides a solvent for an electrolyte solution, an electrolyte solution, and a gel-like electrolyte superior in oxidation resistance and flame resistance. A solvent for an electrolyte solution comprising at least one boric ester represented by the following formula (I), and a boric ester represented by the following formula (II): B(ORf)3 (I); B(OCH2CH2CN)3 (II) wherein, in formula (I), each Rf independently represents CH2(CF2)nCF3 or CH(CF3)2, n is an integer from 0 to 6, and at least a part of each of —ORf and —OCH2CH2CN included in the boric esters is transesterified.

Abstract: An electromagnetic relay includes a contact that includes a fixed contact and a movable contact, a permanent magnet provided on the peripheral side of the contact, and a non-magnetic body. The movable contact is displaceable in a first direction to move toward the fixed contact and in a second direction to move away from the fixed contact. The permanent magnet has a polarity direction perpendicular to the first and second directions. The non-magnetic body faces toward the direction of a Lorentz force that acts based on the permanent magnet in a direct electric current flowing through the contact.

Abstract: An object of the present invention is to provide a compound that can regulate plant growth. The compound selected from the group consisting of (A) and (B): (A) 3H-imidazo[4,5-d][1,2,3]triazin-4,6(5H,7H)-dione; and (B) 3-methyl-3H-imidazo[4,5-d][1,2,3]triazin-4,6(5H,7H)-dione; has a plant growth regulating action.

Abstract: In a pixel 11, a floating semiconductor region FD accumulates a charge from a photoelectric transducer PD. A first charge transfer path CTP1 extends from the photoelectric transducer PD to the floating semiconductor region FD through the storage diode SD. A second charge transfer path CTP2 extends from the photoelectric transducer PD to the floating semiconductor region. An output unit AMP provides a signal corresponding to a potential in the floating semiconductor region FD. The first charge transfer path CTP includes a first shutter switch TR(GS1) for controlling a transfer of the charge from the photoelectric transducer PD, the storage diode SD for accumulating the charge from the photoelectric transducer PD, and a transfer switch TR(TF1) for controlling a transfer of the charge from the storage diode SD to the floating semiconductor region PD, while the second charge transfer path CTP includes a shutter switch TR(GS2) for controlling a transfer of the charge from the photoelectric transducer PD.

Abstract: An object of this invention is to detect an external force or acceleration with good sensitivity using a simple configuration. An external force detection sensor comprises a comb electrode including a fixed electrode having a plurality of fixed combtooth portions and a movable electrode having a plurality of movable combtooth portions inserted between the fixed combtooth portions; a power supply connected to the fixed electrode and the movable electrode in order to cause vibration of the movable electrode at a prescribed resonance frequency through an electrostatic force on the fixed electrode; and detection means for detecting an external force based on a change in electrical characteristics between the fixed electrode and the movable electrode when the movable electrode is caused to vibrate.

Abstract: An on-board radar includes a lens antenna which includes a lens, a substrate provided with a hole for disposing the lens, a plurality of parts provided on a portion of the substrate other than a portion on which the lens is provided, and a primary radiator which radiates electromagnetic waves onto the lens.

Abstract: An A/D converter 101 comprises a first cyclic A/D converter circuit 103 and an A/D converter circuit 105. The A/D converter 101 includes a record circuit 107 for storing conversion results from the A/D converter circuits 103, 105. The record circuit 107 includes an upper-bit record circuit 107a and a lower-bit circuit 107b. The cyclic A/D converter circuit 103 receives an analog value SA and generates a first digital value SD1 indicating the analog value SA and a residue value RD. The A/D converter circuit 105 receives the residue value RD and generates a second digital value SD2 having lower M bits indicating the residue value RD. The conversion accuracy in the A/D converter circuit 105 can be lowered to ½L that in the A/D converter circuit 103.

Abstract: The present invention provides a method of detecting a functional filamentous fungus, wherein the functional filamentous fungus, Coprinellus curtus, in a sample is detected using at least one polynucleotide selected from the group consisting of polynucleotides having a nucleotide sequence shown in SEQ ID NO: 1, SEQ ID NO: 2, SEQ ID NO: 3 or SEQ ID NO: 4 and polynucleotides having a nucleotide sequence complementary thereto, and polynucleotides having a nucleotide sequence substantially homologous to these sequences; and a method of evaluating a product containing a functional filamentous fungus wherein the existence or concentration of the functional filamentous fungus, Coprinellus curtus, in a product containing a functional filamentous fungus is evaluated.

Abstract: A urea compound of the present invention is represented by general formula (I) shown below: wherein each of X1, X2 and X3 independently represents a hydrogen atom, an alkyl group or an aryl group. The aryl group may have one or more functional groups selected from the group consisting of halogen groups, alkyl groups and alkoxy groups.

Abstract: A surface of a product is divided into a plurality of patches and a polygon mesh is formed. Sequences of vertexes on borderlines between the adjacent patches are allowed to correspond to each other, and then, a texture is mapped on each of patch units. The vertexes of the polygon mesh displaced in accordance with the mapped texture are connected together to form crimp applied polygon data for each of the patch units. In each of processing stages, since data to be processed can be limited to data of the two adjacent patches at the maximum, a practicable range of a computer is not exceeded due to the restriction of capacity of an operation memory.

Abstract: According to the present invention, a substituted aromatic compound represented by the following general formula (I) is provided. In general formula (I), A1, A2, and A3 each independently represent an aryl group substituted by a hydrophilic group.

Abstract: A motion blur control device uses inter-frame movement computation means to compute an inter-frame movement direction and an inter-frame movement amount from plural frame images acquired at a specific time interval. Motion blur correction means then generates a corrected frame image by correcting motion blur in a specific frame image in plural frame images based on the blur amount set within a range not exceeding the inter-frame movement amount and based on the inter-frame movement direction. Evaluation means evaluates the corrected frame image using a motion blur evaluation function. The motion blur control device controls the blur amount such that the motion blur evaluation function satisfies a specific condition.

Abstract: An A/D conversion integrated circuit including a plurality of A/D converters which can inhibit noises from being propagated by capacitive coupling from a conductor which transmits a digital signal is provided. In an A/D converter 13, an input 15 receives an analog signal to be A/D converted. An output 17 provides at least a part of a digital signal SD having a predetermined number of bits representing the analog signal SA. In response to an analog signal SA, a sub-A/D conversion circuit 19 generates a signal SDP representing one or a plurality of bit values of the digital signal SD and feeds the signal SDP to the output 17. An input 21a of a control circuit 21 is connected to an output 19a of the sub-A/D conversion circuit 19 and provides a control signal SCONT corresponding to the signal SDP. The control signal SCONT has a waveform including a transition from a voltage level L1 to a voltage level L2 and a transition from the voltage level L2 to the voltage level L1.

Abstract: A sensor circuit integrated with a signal processing circuit and a charging circuit. The sensor circuit has a sensor voltage source to which a sensor internal resonance is connected in series, the signal processing circuit having a capacitor to which the sensor voltage source is connected via a signal line of the charging circuit, and a switch. The charging circuit includes another capacitor connected to the signal line, and a drive circuit at an input side of which the other capacitor is connected and which has a transconductance equivalent to an internal resistance.

Abstract: The present invention provides a high-speed charge-transfer photodiode encompassing a first conductivity type semiconductor layer (20) serving as a charge-generation region; and a second conductivity type surface-buried region (21a) serving as a charge-transfer region of charges generated by the charge-generation region, wherein a specified direction in the surface-buried region (21a) provided along a plane parallel to a surface of the semiconductor layer (20) is assigned as a charge-transfer direction of the charges, and at least one of a variation of widths of the surface-buried region (21a) measured in an orthogonal direction to the charge-transfer direction and a variation of impurity concentration distributions of the surface-buried region (21a), which are measured along the charge-transfer direction, is determined such that an electric field distribution in the charge-transfer direction is constant.

Abstract: The present invention provides a capsule-type compound consisting of: a capsule-type divalent cation consisting of a capsule framework represented by the following formula (1) and a sulfate ion (SO42?) encapsulated in the capsule framework; and a sulfate ion (SO42?) as a counter ion to the capsule-type divalent cation. In the formula (1), R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, R12, and R13 each independently represent a hydrogen atom or a methyl group; and M1 and M2 each independently represent Cu2+, Fe2+, Ni2+, Co2+, or Zn2+.

Abstract: A cyclic A/D converter which can reduce the number of reference voltages for D/A conversion is provided. The cyclic A/D converter (11) comprises a gain stage (15), an A/D converter circuit (17), a logic circuit (19), and a D/A converter circuit (21). In an operational action of the gain stage (15), an operational value (VOP) is generated by the use of an operational amplifier circuit (23) and capacitors (25, 27, 29). The gain stage (15) operates as receiving three kinds of voltage signal from the D/A converter circuit (21) by the switching of two kinds of voltage signal (VDA1, VDA2) to be applied to the capacitors (25, 27) in a switching circuit (31).

Abstract: A semiconductor element includes a base-body region of p-type; a charge-generation buried region of a n-type, implementing a photodiode together with the base-body region, configured to create a first potential valley in the base-body region; an accumulation region of n-type, being buried in a part of the upper portion of the base-body region, configured to create a second potential valley deeper than the first potential valley; a transfer-gate insulation film provided on a surface of the base-body region; a transfer-gate electrode provided on the transfer-gate insulation film, configured to control a potential of a transfer channel formed in the base-body region between the charge-generation buried region and the accumulation region; and a recessed-potential creation mechanism configured to create a stair-like-shaped potential barrier for electronic shuttering.

Abstract: An A/D converter 11 performs multiple-times sampling on a first signal S1 in a first period T1 while performing multiple-times sampling on a second signal S2 in a second period T2. An A/D converter circuit 17 provides a digital signal in response to a signal from an output 15b of a gain stage 15 in the second period T2. The digital signal may have a value “1” or a value “0”. The A/D converter circuit 17 includes a circuit 18 providing a signal SA/DM corresponding to the number of times the value “1” appears. A switch 24 operates in response to a clock signal ?s and is used to sample a signal from a pixel 2a. In a first capacitor circuit 27, a switch 29 and a capacitor 31 are connected to an inverting input 23a and a non-inverting output 23b, respectively. The switch 29 operates in response to a clock signal ?3 and is used for integration in the capacitor 31.

Abstract: The present invention has been created to provide a near infrared high emission rare-earth complex having an excellent light-emitting property in the near infrared region. The near infrared high emission rare-earth complex of the present invention is characterized in that its structure is expressed by the following general formula (1): where Ln(III) represents a trivalent rare-earth ion; n is an integer equal to or greater than three; Xs represent either the same member or different members selected from a hydrogen atom, a deuterium atom, halogen atoms, C1-C20 groups, hydroxyl groups, nitro groups, amino groups, sulfonyl groups, cyano groups, silyl groups, phosphonic groups, diazo groups and mercapto groups; and Z represents a bidentate ligand.