Abstract: A semiconductor structure includes a substrate and a first circuit containing composite block over the substrate. The first circuit containing composite block includes a through via therein and a re-distribution layer thereon. The first circuit containing composite block includes a semiconductor block and a diamond block.

Abstract: A method to process a diamond composite wafer includes the following steps: (a). forming a plurality of through vias in the diamond composite wafer and a first re-distribution layer on a firs side of the diamond composite wafer; (b). attaching a temporary carrier to the first re-distribution layer, and forming a second re-distribution layer on a second side of the diamond composite wafer; and (c). releasing the temporary carrier to form a circuit containing diamond composite wafer.

Abstract: A method to form a first diamond composite wafer, a second diamond composite wafer or a third diamond composite wafer with a predetermined diameter includes the following steps: preparing a plurality of diamond blocks, wherein each diamond block has a dimension smaller than the predetermined diameter; attaching the plurality of diamond blocks to a first semiconductor substrate with the predetermined diameter to form a first temporary composite wafer, wherein a thermal conductivity of the first semiconductor substrate is smaller than that of the diamond block; and filling gaps among the plurality of diamond blocks of the first temporary composite wafer to form the first diamond composite wafer; or attaching the first diamond composite wafer to a second semiconductor substrate with the predetermined diameter to form the second diamond composite wafer, or removing the first semiconductor substrate from the first diamond composite wafer to form the third diamond composite wafer.

Abstract: A die package includes a semiconductor die, a passive component, a molding compound and a redistribution layer (RDL). The semiconductor die includes a first bonding pad. The passive component includes a second bonding pad. The molding compound encloses the semiconductor die and the passive component. The RDL is disposed over the semiconductor die and the passive component and electrically connecting the first bonding pad with the second bonding pad. The semiconductor die is vertically overlapped with the passive component.

Abstract: The present invention discloses a method to form a composite semiconductor wafer with a first dimension. The method comprises: attaching a set of thermal dissipation layers to a temporary carrier; bonding the temporary carrier with the set of thermal dissipation layers to a semiconductor substrate with the first dimension, such that the set of thermal dissipation layers are bonded to the semiconductor substrate; and removing the temporary carrier to form composite semiconductor wafer with the first dimension.