Abstract: A honeycomb structure according to the present invention includes: a honeycomb structure portion 10 including an outer peripheral wall 100 and partition walls 101 arranged on an inner side of the outer peripheral wall 100, the partition walls 101 defining a plurality of cells 101a each forming a flow path extending one end face to other end face; and a magnetic material powder 11 attached to or filled in at least one of the plurality of cells 101a, wherein a volume and/or weight of the magnetic material powder 11 per unit volume varies in an axial direction AD and/or an axis orthogonal direction OD of the honeycomb structure portion 10.

Abstract: A wafer placement table includes a ceramic plate, a cooling plate, a space layer, and a space layer forming portion. The ceramic plate has a wafer placement portion at an upper surface of the ceramic plate and incorporates electrodes. The cooling plate is joined to a lower surface of the ceramic plate and has a refrigerant passage. The space layer is provided between the refrigerant passage and an upper surface of the cooling plate. The space layer forming portion is a part, surrounding the space layer, of the cooling plate. The space layer forming portion has a seam. The seam is formed by metal bonding without a seal member.

Abstract: A waveguide device includes: a waveguide member capable of guiding an electromagnetic wave having a frequency of 30 GHz or more and 20 THz or less; a support substrate configured to support the waveguide member; and a low-dielectric constant portion. The waveguide member includes: an inorganic material substrate; and coplanar electrodes arranged above the inorganic material substrate. The support substrate is arranged below the inorganic material substrate. The low-dielectric constant portion is arranged below the inorganic material substrate, and has a dielectric constant smaller than a dielectric constant of the inorganic material substrate.

Abstract: A ceramic heater includes a ceramic plate. The ceramic plate has a wafer placement surface and has an inner-peripheral-side zone that has a circular shape and an outer-peripheral-side zone that has an annular shape. An inner-peripheral-side resistance heating element that has a two-dimensional shape is disposed in the inner-peripheral-side zone. An outer-peripheral-side is resistance heating element that has a coil shape is disposed in the outer-peripheral-side zone. A terminal of inner-peripheral-side resistance heating element and a terminal of the outer-peripheral-side resistance heating element are disposed in the inner-peripheral-side.

Abstract: A positive electrode of a lithium secondary battery includes a sheet-like positive electrode current collector having conductivity, and a positive electrode active material plate that is a plate-like ceramic sintered compact joined to the positive electrode current collector via a conductive joint layer. The positive electrode active material plate includes at least one active material plate element. This at least one active material plate element is joined to the positive electrode current collector. A main surface of the active material plate element that opposes the positive electrode current collector includes a joint region in which the conductive joint layer exists between the positive electrode current collector and the active material plate element and a non-joint region in which the conductive joint layer does not exist between the positive electrode current collector and the active material plate element. The non joint region is arranged around the joint region.

Abstract: A bonded body includes a supporting substrate composed of a metal oxide, a piezoelectric material substrate, a bonding layer provided between the supporting substrate and piezoelectric material substrate and having a composition of Si(1-x)Ox (0.008?x?0.408), and an amorphous layer provided between the bonding layer and supporting substrate. The oxygen ratio of the amorphous layer is higher than the oxygen ratio of the supporting substrate.

Abstract: A butterfly valve 100 provided in a flow path for a first fluid flowing through a heat exchanger. The butterfly valve 100 includes: a valve plate 110 provided in the flow path; a shaft 120 for rotatably supporting the valve plate 110 in the flow path; and at least one valve plate auxiliary member 130 in contact with at least one plate surface 111a, 111b of the valve plate 100, the valve plate auxiliary member 130 having an extending portion 131 extending radially outwardly from an outer peripheral surface 112 of the valve plate 110. The valve plate auxiliary member 130 is made of a material having a lower Young's modulus than that of the valve plate 110.

Abstract: A member for a semiconductor manufacturing apparatus includes a ceramic plate; a composite plate joined to a lower surface of the ceramic plate; a cooling plate formed of a metal material, disposed on a lower surface of the composite plate; a first fastener that fastens the composite plate and the cooling plate; a support plate that is formed of an insulating material and supports a lower surface of the cooling plate; and a second fastener that fastens the cooling plate and the support plate, wherein, when the ceramic plate is heated from room temperature to high temperature, a first layered body including the ceramic plate and the composite plate deforms such that a central portion of the first layered body is convex, and a second layered body including the cooling plate and the support plate deforms such that a central portion of the second layered body is convex.

Abstract: An induction heating device according to the present invention includes: an induction heating coil 10 with a conductor 100 wound around a predetermined axis line AL; a member 11 including at least one soft magnetic material 110, the at least one soft magnetic material 110 being disposed at or on an outer side of each of axial end portions 102 of the induction heating coil 10 in an extending direction of the axis line AL; and a heating object 2 disposed on an inner side of the induction heating coil 10 and the member 11, the heating object 2 being configured to be heatable by induction heating using a magnetic flux from the induction heating coil 10.

Abstract: A first frame is supported by a heat sink plate, surrounds an unmounted region of the heat sink plate, contains a resin, and has a first surface. A second frame contains a resin, and has a second surface opposing the first surface. An external terminal electrode passes between the first surface and the second surface. An adhesive layer contains a resin, and includes a lower portion, an upper portion, and an intermediate portion. The lower portion connects the external terminal electrode and the first surface to each other. The upper portion connects the external terminal electrode and the second surface to each other. The intermediate portion is disposed within a through hole of the external terminal electrode, and connects the lower portion and the upper portion to each other.

Abstract: A method for producing a honeycomb structure includes: a forming step of extruding a forming raw material containing a ceramic raw material mainly based on silicon carbide and metal silicon to obtain a honeycomb formed body, the honeycomb formed body comprising: an outer peripheral wall; and partition walls; a drying step of drying the honeycomb formed body to obtain a honeycomb dried body; and a firing step of firing the honeycomb dried body to obtain a honeycomb fired body. The drying step includes: a first drying step of subjecting the honeycomb formed body to dielectric drying at a frequency of from 2 to 200 MHz so that a moisture scattering rate of the honeycomb formed body after dielectric drying is from 30 to 85%; and a second drying step of subjecting the honeycomb formed body having the moisture scattering rate of from 30 to 85% to hot air drying.

Abstract: A pillar shaped honeycomb structure, including: a porous partition wall that define a plurality of cells, the plurality of cells forming flow paths for a fluid, the plurality of cells extending from an inflow end face to an outflow end face; and an outer peripheral wall located at the outermost circumference. The plurality of cells include: a plurality of first cells; and a plurality of second cells having a lower cross-sectional area than that of the plurality of first cells. An interior of each of the second cells is filled with a material comprising a magnetic substance. Each of the second cells are arranged adjacent to at least one of the first cells.

Abstract: A method of operating an electrochemical device includes the steps of: applying a first adsorption voltage to a function electrode while supplying a predetermined gas to the function electrode; and switching the first adsorption voltage to a second adsorption voltage higher than the first adsorption voltage while maintaining the supply of the predetermined gas to the function electrode.

Abstract: A catalyst support for induction heating includes: a honeycomb structure including a pillar shaped honeycomb structure portion having: an outer peripheral wall; and a partition wall disposed on an inner side of the outer peripheral wall, the partition wall defining a plurality of cells, each of the cells extending from an end face on an inlet side to an end face on an outlet side in a gas flow direction to form a flow path; a catalyst supported onto an interior of the partition wall; and at least one magnetic body provided within the honeycomb structure, wherein the catalyst support has a region A where the catalyst is not supported, at least on the end face side of the catalyst support on the inlet side in the gas flow direction, and wherein the magnetic body is arranged at least in the region A in the gas flow direction.

Abstract: A wafer placement table includes: a ceramic plate including a wafer placement portion having a reference surface on which a number of small protrusions are provided; a cooling plate including a refrigerant flow path; a joining layer with which the ceramic plate and the cooling plate are joined; a recessed groove provided in the reference surface and having a bottom surface positioned lower than the reference surface; a plug arrangement hole passing through the ceramic plate and being open to the bottom surface of the recessed groove; a porous plug disposed in the plug arrangement hole, the porous plug having a top surface positioned at the same height as the bottom surface of the recessed groove and allowing gas to flow; and a gas supply path through which gas is supplied to the porous plug.

Abstract: A catalyst support for induction heating includes: a honeycomb structure including a pillar shaped honeycomb structure portion having: an outer peripheral wall; and a partition wall disposed on an inner side of the outer peripheral wall, the partition wall defining a plurality of cells, each of the cells extending from an end face on an inlet side to an end face on an outlet side in a gas flow direction to form a flow path; a catalyst supported onto an interior of the partition wall; and at least one magnetic body provided within the honeycomb structure, wherein the catalyst support has a region A where the catalyst is not supported, at least on the end face side of the catalyst support on the inlet side in the gas flow direction, and wherein the magnetic body is arranged at least in the region A in the gas flow direction.

Abstract: A catalyst device includes a central axis and a catalyst support. The catalyst support includes a slit that is arranged to be orthogonal to the central axis. The slit is arranged to be symmetrical with respect to an arbitrary plane that includes the central axis.

Abstract: A wafer placement table includes a ceramic plate that has at least a wafer placement part at an upper surface thereof, a cooling plate that is joined to a lower surface of the ceramic plate and that has a refrigerant flow path, gas common paths that are provided above the refrigerant flow path, gas introduction paths that extend from a lower surface of the cooling plate to a corresponding one of the gas common paths, and a plurality of gas distribution paths, that are provided for the gas common paths. The gas distribution path that is disposed at an outermost periphery of the ceramic plate is provided at a position that does not overlap the refrigerant flow path in plan view.

Abstract: Provided is an air electrode/separator assembly including a hydroxide ion conductive separator including a hydroxide ion conductive solid electrolyte; and an air electrode layer having a thickness of 1,000 nm or smaller that is provided on one side of the hydroxide ion conductive separator and that includes a hydroxide ion conductive material, an electron conductive material, and an air electrode catalyst, provided that the hydroxide ion conductive material may be the same material as the hydroxide ion conductive solid electrolyte or the air electrode catalyst, and provided that the electron conductive material may be the same material as the air electrode catalyst.

Abstract: In a gas sensor, oxygen pumping control is performed to pump oxygen from the surroundings of an outer side pump electrode into the surroundings of a reference electrode. In addition, during execution of the oxygen pumping control, a pump current Ip2 is measured when oxygen originating from NOx is pumped out from the surroundings of a measurement electrode so that a voltage V2 reaches a target voltage V2*. Then, the NOx concentration of a measurement-object gas is calculated based on Ip2. In the gas sensor, the NOx concentration is corrected based on DVref which is the difference between Vref1 and Vref2, wherein Vref1 is the voltage across the reference electrode and the outer side pump electrode when the oxygen pumping control is not performed, and Vref2 is the voltage across the reference electrode and the outer side pump electrode when the oxygen pumping control is performed.