Abstract: A receiving table 100 for supporting a side surface of a honeycomb formed body, the side surface being parallel to a cell extending direction. The receiving table 100 comprises: a body portion 10 having a groove 11 extending in one direction; a support portion 20 comprising: a flexible sheet substrate 21 in contact with a surface of the groove 11 of the body portion 10; and a foam layer 22 attached to the flexible sheet substrate 21, the foam layer 22 being brought into contact with the side surface of the honeycomb formed body; and fixing members 30 for fixing the support portion 20 to the body portion 10. The support portion 20 is provided in a non-adhesive state to the body portion 10.

Abstract: A composite oxide catalyst includes Ce that is a first metal, La that is a second metal, and a third metal as contained metals. The third metal is a transition metal, or a rare-earth metal other than Ce and La. A Ce content in the contained metals is higher than or equal to 5 mol % and lower than or equal to 95 mol %. An La content in the contained metals is higher than or equal to 2 mol % and lower than or equal to 93 mol %. A content of the third metal in the contained metals is higher than or equal to 2 mol % and lower than or equal to 93 mol %.

Abstract: A wafer placement table includes a ceramic base having a wafer placement surface; resistance heating elements buried in the ceramic base; jumper layers having a planar shape and provided in a different layer from the resistance heating elements; an inner via connecting the jumper layer and an end of the resistance heating element; and a feed via connected to the jumper layer, wherein each of the resistance heating elements is provided for each of zones of a surface parallel to the wafer placement surface, each of the jumper layers is provided for each of the resistance heating elements, and a center-to-center distance between the inner via and the feed via in each of the jumper layers is greater than or equal to 50 mm.

Abstract: A member for semiconductor manufacturing apparatus includes a ceramic plate incorporating an electrode; a ceramic plate through hole extending through the ceramic plate in an up-and-down direction; a base plate having electrical conductivity and located adjacent to a lower surface of the ceramic plate; a base plate through hole extending through the base plate in the up-and-down direction; an insulating sleeve inserted into the base plate through hole and having an outer circumferential surface adhered to an inner circumferential surface of the base plate through hole with an adhesive layer therebetween; and a sleeve through hole extending through the insulating sleeve in the up-and-down direction and communicating with the ceramic plate through hole, wherein the insulating sleeve has at least one ring-shaped or spiral outer circumferential groove on the outer circumferential surface of the insulating sleeve except for an upper end portion of the insulating sleeve.

Abstract: An external terminal electrode is attached to a frame, and the frame contains a first resin, and has a first adhered surface. A heat sink plate supports the frame, has an unmounted region where a power semiconductor element is to be mounted within the frame in plan view, is made of metal, and has a second adhered surface. An adhesive layer contains a second resin different from the first resin, and adheres the first adhered surface of the frame and the second adhered surface of the heat sink plate to each other. One of the first and second adhered surfaces includes a flat portion and a protruding portion. The protruding portion protrudes from the flat portion and opposes the other one of the first adhered surface and the second adhered surface with the adhesive layer therebetween.

Abstract: In a method for manufacturing a gas sensor, a casing for holding a sensor element and a protective cover are connected to each other so that a distal end portion of the sensor element is covered with the protective cover. A first gas chamber, a sensor element chamber, and a second gas chamber into which gas is introduced from the outside are formed between the protective cover and the casing. In the gas introduction portion including the first gas chamber, the sensor element chamber, and the second gas chamber, there is no joint portion formed by welding.

Abstract: In a ceramic sintered body, the Zr content is 17.5 mass %-23.5 mass % in terms of ZrO2, the Hf content is 0.3 mass %-0.5 mass % in terms of HfO2, the Al content is 74.3 mass %-80.9 mass % in terms of Al2O3, the Y content is 0.8 mass %-1.9 mass % in terms of Y2O3, the Mg content is 0.1 mass %-0.8 mass % in terms of MgO, the Si content is 0.1 mass %- and 1.5 mass % in terms of SiO2, and the Ca content is 0.03 mass %-0.35 mass % in terms of CaO. The total content of Na and K is 0.01 mass %-0.10 mass %, when the K content is converted to K2O and the Na content is converted to Na2O. The balance content is 0.05 mass % or less in terms of oxide.

Abstract: A limiting-current type gas sensor including a sensor element including a base part made of an oxygen-ion conductive solid electrolyte and measuring concentration of NOx in a measurement gas includes: a pump cell including a first electrode disposed to be capable of being in contact with a gas introduced into the element and a second electrode disposed so that a part made of the solid electrolyte is located between the first electrode and the second electrode; and a pumping diagnostic part to determine whether an inter-electrode electric field produced in the part made of the solid electrolyte through application of a predetermined pump voltage between the electrodes exceeds a first threshold, and, when the inter-electrode electric field exceeds the first threshold, the predetermined pump voltage is reduced so that the inter-electrode electric field falls below the first threshold.

Abstract: A ceramic heater includes a ceramic plate in which inner circumferential side and outer circumferential side resistance heating elements are built in; and a cylindrical shaft joined to a rear surface of the ceramic plate. A long hole is provided along a direction deviated from the diameter direction of the ceramic plate, and extends from a start point of a shaft inside area to a terminal position of the outer circumferential portion of the ceramic plate. A portion of the long hole forms a long groove, the portion passing through the shaft inside area. Terminals of the resistance heating elements are collectively provided in one of two division areas which are in the shaft inside area and divided by an axial line of the long groove, the one being a first division area having a larger area.

Abstract: A member for a semiconductor manufacturing apparatus, includes: a ceramic plate that has a ceramic plate through hole; an electroconductive base plate that has a base plate through hole and that is disposed on a lower surface side of the ceramic plate; an insulating sleeve which is inserted into the base plate through hole and of which an outer peripheral surface is adhered to an inner peripheral surface of the base plate through hole via an adhesion layer; and a sleeve through hole that passes through the insulating sleeve in the up-down direction and that communicates with the ceramic plate through hole. The insulating sleeve has a tool engaging portion that is engageable with an external tool, and upon being engaged with the external tool, the tool engaging portion transmits rotation torque of the external tool to the insulating sleeve.

Abstract: A porous cylindrical support for use in supporting a zeolite membrane has a generally cylindrical inside surface having a central axis extending in the longitudinal direction and a generally cylindrical outside surface that surrounds the inside surface. A zeolite membrane is formed on the outside surface. A maximum value A and a minimum value B of a support thickness in a circumferential direction satisfy (A?B)/(A+B)?0.3 in at least part of the support in the longitudinal direction, the support thickness being a radial distance between the inside surface and the outside surface. By reducing a variation in support thickness, it is possible to improve uniformity in the thickness of the zeolite membrane formed on the support.

Abstract: A gas sensor according to the present application includes a detecting device that detects a specific gas concentration of a measurement-object gas based on an electromotive force generated between a reference electrode and a measurement electrode; and a reference gas regulating device that flows an oxygen pumping current between the reference electrode and a measurement-object gas side electrode and pumps oxygen from around the measurement-object gas side electrode to around the reference electrode, wherein when the average value of the oxygen pumping current is P and the limiting current value of a reference gas introduction layer when oxygen is pumped from around the reference electrode to around the measurement-object gas side electrode is Q, the ratio Q/P is from 0.8 to 10.

Abstract: A sensor element includes: an inner protective layer having a porosity of 30% to 65% on two main surfaces; an intermediate protective layer having a porosity of 25% to 80%, which is equal to or smaller than the porosity of the inner layer; and an outer protective layer surrounding an element base on an outermost periphery on the one end portion of the element, and having a porosity of 15% to 30%, which is smaller than the porosity of the intermediate layer, wherein these layers are laminated in this order at least in a range in which the at least one inner chamber is provided in the element base, the outer is in contact with the inner layer in a range in which the at least one inner chamber is not provided, and a difference of porosity between the inner layer and the outer layer is 10% to 50%.

Abstract: A silicon carbide porous body includes: (A) silicon carbide particles as an aggregate; and (B) at least one selected from the group consisting of metallic silicon, alumina, silica, mullite and cordierite. The silicon carbide porous body has amorphous and/or crystalline SiO2 or SiO on a surface(s) of the component (A) and/or the component (B). The silicon carbide porous body contains 6% by mass or less of ?-cristobalite in the amorphous and/or crystalline SiO2 or SiO.

Abstract: A bonded body includes a supporting substrate; a piezoelectric material substrate; a first bonding layer provided on the supporting substrate and having a composition of Si(1-x)Ox (0.008?x?0.408); a second bonding layer provided on the piezoelectric material substrate and having a composition of Si(1-y)Oy (0.008?y?0.408); and an amorphous layer provided between the first bonding layer and second bonding layer. The oxygen ratio of the amorphous layer is higher than the oxygen ratio of the first bonding layer and oxygen ratio of the second bonding layer.

Abstract: In a porous composite, a base material has a honeycomb structure whose inside is partitioned into a plurality of cells. In the plurality of cells, a plurality of first cells whose one ends in the longitudinal direction are sealed, and a plurality of second cells whose other ends in the longitudinal direction are sealed are arranged alternately. A collection layer covers inner surfaces of the plurality of first cells. An overall Sa that is an arithmetical mean height Sa indicating a surface roughness of a surface of the collection layer in the plurality of first cells is greater than or equal to 0.1 ?m and less than or equal to 12 ?m. An overall mean thickness that is a mean thickness of the collection layer in the plurality of first cells is greater than or equal to 10 ?m and less than or equal to 40 ?m.

Abstract: A wafer placement apparatus includes a ceramic plate having an upper surface as a wafer placement surface and in which an electrode is embedded; and a cooling plate provided on a lower surface, opposite a wafer placement surface, of a ceramic plate and in which a refrigerant passage is provided, wherein a refrigerant passage includes a first passage forming a single continuous line and extending parallel to a wafer placement surface, and a second passage forming a single continuous line and extending along a first passage, an outlet of a second passage being positioned near an inlet of a first passage, an inlet of a second passage being positioned near an outlet of a first passage.

Abstract: A metal terminal includes an element contacting portion which is disposed at one end of the metal terminal and is placed in contact with a sensor element, a lead wire retaining member which is disposed at another end of the metal terminal, and crimps and retains lead wires, a positioning member disposed between the one end and the other end and extending in a direction intersecting one direction, the positioning member positioning the metal terminal on a ceramic housing, and a guide member provided integrally with the positioning member at a site between the positioning member and the lead wire retaining member.

Abstract: A sensor element includes: an inner protective layer having a porosity of 30% to 65% on two main surfaces; an intermediate protective layer, at least a part of which has contact with the inner layer, and having a porosity of 25% to 80%, which is equal to or smaller than the porosity of the inner layer; and an outer protective layer surrounding an element base on an outermost periphery on the one end portion of the sensor element, having contact with the intermediate and the inner layer, having contact with a leading end surface of the element base or the intermediate layer on the leading end surface, and having a porosity of 15% to 30%, which is smaller than the porosity of the intermediate layer, wherein a difference of porosity between the inner and the outer layer is 10% to 50%.

Abstract: A reactor includes a second flow path on a permeation side of a separation membrane. The second flow path includes an inflow port open to a first space between a first seal portion and a flow rate adjustment unit, and an outflow port open to a second space between a second seal portion and a flow rate adjustment unit. A housing includes a sweep gas supply port for supplying a sweep gas to the first space and a sweep gas exhaust port for discharging the sweep gas from the second space. In a side view of the reactor, a direction in which the sweep gas flows from the first space to the second space via the flow rate adjustment unit is the same as a direction in which the sweep gas flows through the second flow path.