Abstract: A light source device includes: a plurality of light emitting parts, each having an upper surface that includes a light emitting surface; an optical lens located above the light emitting surfaces of the light emitting parts, the optical lens having: a first surface including a first incident region, and a second surface including a second incident region; and a light converging member located between the light emitting parts and the optical lens, the light converging member including: a plurality of light entering portions, each corresponding to a respective one of a plurality of light emitting parts and covering the light emitting surface of the respective one of the light emitting parts, and a plurality of light emission portions, each corresponding to a respective one of the plurality of light entering portions.

Abstract: A light-emitting module including a substrate including a support member having a first surface and a wiring layer provided on the first surface, and a plurality of light-emitting elements provided on the first surface and electrically connected to the wiring layer. A plurality of light adjustment members is provided on a side of upper surfaces of the light-emitting elements, and spaced apart from the light-emitting elements, respectively. At least one light-shielding member is provided on the first surface, provided surrounding a first light-emitting element among the light-emitting elements and a first light adjustment member among the light adjustment members in plan view, and provided between the first light-emitting element and a second light-emitting element among the light-emitting elements in cross-sectional view. A light-transmissive member covers the first surface, the wiring layer, the light-emitting elements, the light adjustment members, and the at least one light-shielding member.

Abstract: A method includes generating luminance setting data, luminance estimation data, maximum luminance data, and gradation setting data, and controlling a backlight panel and a liquid crystal panel based on the luminance setting data and the gradation setting data, respectively. The luminance setting data sets a luminance value for each light-emitting region of the backlight panel and is generated based on an input image. The luminance estimation data indicates an estimated luminance value of backlight for the input image with respect to each pixel of the liquid crystal panel and is generated based on the luminance setting data and luminance profile data. The maximum luminance data is generated based on the luminance estimation data. The gradation setting data sets a gradation value of each pixel of the liquid crystal panel for the input image, and is generated based on the input image, the luminance estimation data, and the maximum luminance data.

Abstract: A method of manufacturing a light-emitting element includes: preparing a wafer including a substrate, and a semiconductor structure disposed on the substrate; and forming a plurality of light-emitting element regions by dividing the semiconductor structure. The forming of the plurality of light-emitting element regions includes: forming a plurality of first masks on the semiconductor structure such that each of the plurality of first masks covers a respective first region where one of the plurality of light-emitting element regions is to be formed, and each of the plurality of first masks has an area greater than an area of the respective first region in a plan view, and exposing the substrate through the semiconductor structure by removing a portion of the semiconductor structure that is not covered by the plurality of first masks.

Abstract: A light emitting device includes: a plurality of sub-mounts including at least a first sub-mount and a second sub-mount; a plurality of semiconductor laser elements including a first semiconductor laser element mounted on the first sub-mount and a second semiconductor laser element mounted on the second sub-mount; a plurality of protective elements including a first protective element mounted on the first sub-mount and a second protective element mounted on the second sub-mount; and a plurality of wires including a first wire, wherein a first end of the first wire is joined to the first protective element and a second end of the first wire is joined to the second sub-mount, and wherein the first wire overlaps a portion of the first semiconductor laser element in a top view.

Abstract: Provided is a solid electrolyte material for fluoride ion batteries which has high fluoride ion conductivity. The solid electrolyte material for fluoride ion batteries includes a metal composite fluoride that includes, as its main phase, a crystal structure containing, in a fluorite structure containing a fluoride ion, a lanthanoid metal ion, and an alkali earth metal ion, an adduct ion having an ion radius larger than that of the alkali earth metal ion. The metal composite fluoride has a composition in which a ratio of a number of moles of the fluoride ion to a total number of moles of the lanthanoid metal ion, the alkali earth metal ion, and the adduct ion is greater than 1.87 and is smaller than 3, and a ratio of a number of moles of the adduct ion to a number of moles of the alkali earth metal ion is smaller than 1.

Abstract: A method of producing a cylindrical bonded magnet includes providing a mold including an inner mold portion, an outer mold portion, a first orientation magnet, and a second orientation magnet, and performing molding to obtain a cylindrical bonded magnet by filling a region between the outer surface of the inner mold portion and the inner surface of the outer mold portion with a resin composition. When viewed in a cross-section, a first distance is shorter than a second distance, the first distance is a straight line distance along a magnetic field application direction and is tangent to a circle defined by the inner surface of the outer mold portion, and the second distance is a straight line distance along the magnetic field application direction and passes through a center of a circle defined by the outer surface of the inner mold portion.

Abstract: A method of producing a magnetic powder includes performing a phosphorus treatment to obtain a phosphorus compound and a rare earth-iron-nitrogen-based magnetic powder, the phosphorus treatment including adding an inorganic acid to a slurry containing: a rare earth-iron-nitrogen-based magnetic powder containing R, Fe, and N, where R represents at least one of rare earth elements selected from the group consisting of Y, Ce, Pr, Nd, Gd, Tb, Dy, Ho, Er, Tm, Lu, and Sm, and if R contains Sm, Sm constitutes less than 50 atm % of a total R atomic content; water; and a phosphorus-containing substance.

Abstract: A nitride semiconductor light emitting element includes: n-side and p-side nitride semiconductor layers; and an active layer. The active layer includes a plurality of well layers and a plurality of barrier layers. The plurality of well layers include first well layers, and second well layers positioned closer to the p-side nitride semiconductor layer than the first well layers. At least one of the plurality of barrier layers positioned between the first well layers and at least one of the plurality of barrier layers positioned between the second well layers respectively include a first barrier layer containing an n-type impurity, and a second barrier layer, wherein a concentration of the n-type impurity in the second barrier layer is lower than a concentration of the n-type impurity in the first barrier layer, and wherein the second barrier layer is positioned closer to the p-side nitride semiconductor layer than the first barrier layer.

Abstract: A method of cultivating algal cells of an algae belonging to a class selected from Chlorophyceae, Euglenophyceae, Bacillariophyceae and Haptophyceae includes: irradiating the algal cells with an artificial light having a ratio of (i) photon flux density in a wavelength range of 520-630 nm to (ii) photosynthetic photon flux density, that is 65% or more; and measuring a cell size of the algal cells. Irradiation and non-irradiation of the algal cells with the artificial light are switched, or the photon flux density in the wavelength range of 520-630 nm is changed, according to the measured cell size.

Abstract: A planar light source includes a first substrate including a first part and a second part; a light source located at an upper surface side of the first part; a light guide member located at the upper surface side of the first part; and a circuit member overlapping the light guide member in a direction parallel to an upper surface of the first part. The circuit member includes a second substrate located at an upper surface side or a lower surface side of the second part, and an electronic element located on the second substrate.

Abstract: A light emitting device includes: a light emitting unit; an optical member configured to transmit or pass light emitted by the light emitting unit, the optical member including: a first region configured to transmit or pass light having a first chromaticity; and a second region configured to transmit or pass light having a second chromaticity different from the first chromaticity; and a movable member configured to move to change a distance between the light emitting unit and the optical member along an optical axis of the light emitting unit.

Abstract: A Sm—Fe—N-based rare earth magnet more resistant to demagnetization than ever before in an environment where an external magnetic field is applied, particularly at high temperatures, and a production method thereof are provided. The present disclosure presents a production method of a rare earth magnet, including preparing a coated magnetic powder, compression-molding the coated magnetic powder in a magnetic field to obtain a magnetic-field molded body, pressure-sintering the magnetic-field molded body to obtain a sintered body, and heat-treating the sintered body, and a rare earth magnet obtained by the method. D50 of the magnetic powder in the coated magnetic powder is 1.50 ?m or more and 3.00 ?m or less, the content ratio of the zinc component in the coated magnetic powder is 3 mass % or more and 15 mass % or less, and the heat treatment temperature is 350° C. or more and 410° C. or less.

Abstract: A method of producing a transmission grating includes: providing first and second glass plates, each having a first main surface defining a plurality of elongated reverse trapezoidal grooves, each having a reverse trapezoidal shape in a vertical cross-section and being defined by a first wall, a second wall, and a bottom surface, wherein the elongated reverse trapezoidal grooves are formed at an uniform interval, thus defining a plurality of elongated trapezoidal protrusions, each having a first wall, a second wall, and an upper surface; engaging the elongated trapezoidal protrusions of the first glass plate with the elongated reverse trapezoidal grooves of the second glass plate; and fitting the first walls of the protrusions with the first walls of the grooves and closely fitting the upper surfaces of the protrusions with the bottom surfaces of the grooves, and bonding the first glass plate to the second glass plate.

Abstract: A metallic structure for an optical semiconductor device, including a base body having disposed thereon at least in part metallic layers in the following order; a nickel or nickel alloy plated layer, a gold or gold alloy plated layer, and a silver or silver alloy plated layer, wherein the silver or silver alloy plated layer has a thickness in a range of 0.001 ?m or more and 0.01 ?m or less.

Abstract: An oxide fluorescent material has a composition represented by the following formula (1). (Mg1-sM1s)2(Al1-tM2t)u(Ge1-vM3v)wOx:Cry,M4z??(1) wherein M1 represents at least one element selected from the group consisting of Ca, Sr, Ba, and Zn; M2 represents at least one element selected from the group consisting of Ga, Sc, and In; M3 represents at least one element selected from the group consisting of Si, Ti, Zr, Sn, and Hf; M4 represents at least one element selected from the group consisting of Ni, Ce, Eu, Fe, Mn, Nd, Tm, Ho, Er, and Yb; and s, t, u, v, w, x, y, and z satisfy 0?s?1.0, 0?t?1.0, 1.5?u?2.5, 0?v?0.5, 3.0?w?6.0, 11.0?x?17.0, 0.005?y?1.0, and 0?z?0.5.

Abstract: A nitride semiconductor light emitting element includes: an n-side semiconductor layer; a p-side semiconductor layer; an active layer positioned between the n-side semiconductor layer and the p-side semiconductor layer; and an electron blocking layer positioned between the p-side semiconductor layer and the active layer. The active layer includes, successively from the n-side semiconductor layer side: a first barrier layer containing Al, a first well layer that contains Al and emits ultraviolet light, a second barrier layer containing Al, and a second well layer that is in contact with the electron blocking layer, contains Al, and emits ultraviolet light. An Al composition ratio of the second well layer is higher than an Al composition ratio of the first well layer. A thickness of the second well layer is less than a thickness of the first well layer.

Abstract: A nitride semiconductor light emitting element includes: an n-side semiconductor layer; a p-side semiconductor layer; and an active layer positioned between the n-side semiconductor layer and the p-side semiconductor layer. The active layer includes, successively from a n-side semiconductor layer side: a first barrier layer containing Al and an n-type impurity, a first well layer containing Al and emitting ultraviolet light, a second barrier layer containing Al, and a second well layer containing Al and emitting ultraviolet light. A highest n-type impurity concentration peak in the first barrier layer is located in a portion of the first barrier layer that is closer to the p-side semiconductor layer than to the n-side semiconductor layer. An Al composition ratio of the first barrier layer is higher than an Al composition ratio of the second barrier layer.

Abstract: An oxide fluorescent material has a composition represented by the following formula (1): (Mg1-pM1p)q(Li1-rM2r)s(In1-tM3t)u(Ge1-vM4v)wOx:Cry,M5z??(1) wherein M1 represents at least one element selected from the group consisting of Ca, Sr, Ba, and Zn; M2 represents at least one element selected from the group consisting of Na, K, Rb, and Cs; M3 represents at least one element selected from the group consisting of Al, Ga, and Sc; M4 represents at least one element selected from the group consisting of Si, Ti, Zr, Sn, and Hf; M5 represents at least one element selected from the group consisting of Ni, Ce, Eu, Fe, Mn, Nd, Tm, Ho, Er, and Yb; and p, q, r, s, t, u, v, w, x, y, and z satisfy 0?p?1.0, 0.1?q?0.9, 0?r?1.0, 0.05?s?0.45, 0?t?0.5, 0.05?u?0.45, 0?v?1.0, 0.8?w?1.3, 2.6?x?3.6, 0.002?y?0.5, 0?z?0.3, and 0.9?q+s+u?1.2.

Abstract: A light-emitting device includes: a substrate having an upper surface; at least one light-emitting element on or above the substrate, the at least one light-emitting element having a rectangular shape in a plan view from above the light-emitting device and having an upper surface serving as a light-emitting surface of the at least one light-emitting element; a plate-shaped light-transmissive member having a rectangular shape in a plan view from above the light-emitting device and having a lower surface that faces the upper surface of the at least one light-emitting element; and a light-guiding member that is disposed between the light-emitting element and the light-transmissive member.