Abstract: Provided is a method for producing an electrode active material capable of forming a non-aqueous secondary battery with superior durability and output characteristics. The method for producing an electrode active material for a non-aqueous secondary battery includes contacting a carbon material containing at least one selected from the group consisting of graphene, a carbon nanotube and carbon black with a one-electron oxidant having an oxidation-reduction potential of 0.2 V or more and 1.9 V or less to obtain at least one modified carbon material, and contacting the at least one modified carbon material with alkali-metal-transition-metal composite oxide particles.

Abstract: A planar light source has a plurality of light sources, a substrate, and a partitioning member. The partitioning member includes a first member provided with first partitioned parts each having a first bottom part and first oblique parts surrounding the first bottom part that are arranged on the substrate in a matrix, and a second member provided with second partitioned parts each having a second bottom part and second oblique parts surrounding the second bottom part that are arranged on the substrate in a matrix. The first member further has first outer oblique parts overlapping the second oblique parts located along the outer edge of the second member on the first member side. The first bottom parts and the second bottom parts each have a light source disposition opening, and the light sources are individually disposed on the substrate exposed in the light source disposition openings.

Abstract: A lens includes a cover part and an interposing member formed of a light-reflecting material. The cover part includes a lens part having a lateral side, a connection part constituting a lateral side wall extending from the lateral side, and a flange part having a lower surface disposed below the lateral side wall. The interposing member has an upper surface and an inner lateral surface. The upper surface is disposed on the lower surface of the flange part. The lens part and the interposing member define a recess having an opening facing downward. The lens part defines a bottom surface of the recess. The inner lateral surface defines a lateral surface of the recess, which defines the opening of the recess. The flange part extends outward from the opening. The lens part has a convex lens and a light-emitting surface with projections outward from the convex lens.

Abstract: A light source device for irradiating two or more irradiation regions with light includes a plurality of light emitting parts, an optical lens, and a light converging member. The optical lens includes the first surface including a plurality of incident regions and the second surface including a plurality of emission regions. The light converging member includes a plurality of light entering portions and a plurality of light emission portions. The light converging member is located between the light emitting parts and the optical lens.

Abstract: A light emitting element includes a support substrate, and first and second light emitting portions. Each of the first light emitting portion and the second light emitting portion includes a semiconductor layered body, an insulating film, first and second electrodes and first and second external connection portions. The first external connection portion provided in the first light emitting portion includes a first portion provided adjacent to the second external connection portion of the first light emitting portion in a first direction and provided adjacent to the first external connection portion of the second light emitting portion in a second direction, and the first portion has an inclined portion inclined with respect to one side of the semiconductor layered body on a side facing the first external connection portion provided in the second light emitting portion in the second direction.

Abstract: A light source unit includes: a display device configured to emit light having a substantially Lambertian light distribution and to display an image; and an imaging optical system including: an input element on which light emitted from the display device is incident, and an output element on which light traveling via the input element is incident, the output element being configured to emit light forming a first image corresponding to the image. The imaging optical system is substantially telecentric at the first image side.

Abstract: A method of producing a SmFeN-based anisotropic magnetic powder, the method including preparing a SmFeN-based anisotropic magnetic powder before dispersion containing Sm, Fe, La, W, R, and N, wherein R is at least one selected from the group consisting of Ti, Ba, and Sr, and dispersing the SmFeN-based anisotropic magnetic powder before dispersion using resin-coated metal media or resin-coated ceramic media. A SmFeN-based anisotropic magnetic powder which contains Sm, Fe, La, W, R, and N, wherein R is at least one selected from the group consisting of Ti, Ba, and Sr, and has an average particle size that is at least 2.0 ?m but not more than 4.0 ?m, a residual magnetization ?r that is at least 152 emu/g, and an oxygen content that is not higher than 0.5% by mass.

Abstract: An LED package includes a light source, a light transmissive member, and a light reflecting layer. The light source includes a resin package, a light emitting element and a wavelength conversion material. The resin package includes first and second leads and a resin member. The resin package defines a recess having a bottom face defined by portions of the first and second leads, and a portion of the resin member, and a lateral wall defined by a portion of the resin member. The light emitting element is disposed on or above the bottom face in the recess. The wavelength conversion material is disposed in the recess. The light transmissive member is disposed on or above the light source. The light reflecting layer is disposed on or above the light transmissive member at least on an upper side along an optical axis of the light emitting element.

Abstract: A light emitting device includes a first semiconductor laser element, a light reflecting member, a base member, and a wire. The base member includes a frame part forming a frame. The frame part has a step portion inside of the frame, a bonding surface bonded to the bottom part, a first inner surface extending below the bonding surface, a second inner surface extending above the bonding surface, a first planar surface defining a planar surface of the step portion on an upper surface side, and a first electrode layer and a second electrode layer electrically connected to each other. The second electrode layer is disposed on the first planar surface. The wire is bonded to the second electrode layer and electrically connected to the first semiconductor laser element. A width of the bonding surface is greater on a first planar surface side than on an opposite side.

Abstract: A light emitting device can further improve light extraction efficiency. A method of manufacturing such a light emitting device can also prove advantageous. The light emitting device includes a light emitting element, a light-transmissive member which is disposed on a light extracting surface side of the light emitting element, and a reflecting layer disposed on an element bonding surface of the light transmissive member where the light emitting element is disposed and adjacent to the light emitting element. The light-transmissive member, in a plan view, has a planar dimension greater than the light extracting surface of the light emitting element.

Abstract: The present invention provides a bonded magnet having good heat resistance. The present invention relates to a bonded magnet containing a SmFeN magnetic powder, nylon 12, and a hexafluoroisopropanol-unextractable component. The present invention also relates to a method of preparing a bonded magnet, including: bringing a raw material bonded magnet containing a SmFeN magnetic powder and nylon 12 into contact with an amorphizing agent; and heat-treating the raw material bonded magnet in contact with the amorphizing agent.

Abstract: A light-emitting device includes: at least one light-emitting element comprising a semiconductor layered portion and configured to emit light that has a predetermined wavelength and includes a first polarization component and a second polarization component; and at least one polarized light control member in contact with the at least one light-emitting element. The at least one polarized light control member includes a first structure and a second structure that are positioned in order from a light-emitting element side. The first structure is configured to receive the light having the predetermined wavelength to generate near-field light. The second structure is configured to receive the near-field light and the light having the predetermined wavelength to emit light in which a proportion of the second polarization component is greater than a proportion of the first polarization component.

Abstract: A light-emitting device includes a substrate having a mounting surface, a semiconductor laser element supported by the mounting surface, a first mirror member supported by the mounting surface and having a first reflective surface, and a second mirror member supported by a support member and spaced apart from the first mirror member, and having a second reflective surface at least a part of which is positioned above at least a part of the first reflective surface. The semiconductor laser element is configured to emit a laser beam toward the first reflective surface in a first direction, the first reflective surface reflects the laser beam to change a traveling direction of the laser beam to a second direction, and the second reflective surface reflects the laser beam reflected by the first reflective surface to change the traveling direction of the laser beam to a third direction.

Abstract: The wavelength conversion member includes: a wavelength conversion layer having a first main surface, a second main surface on a side opposite the first main surface, and lateral surfaces connecting the first main surface and the second main surface, the wavelength conversion layer containing quantum dots; a first barrier layer disposed on the first main surface; a second barrier layer disposed on the second main surface; an inorganic member disposed between the first barrier layer and the second barrier layer and surrounding the lateral surfaces of the wavelength conversion layer in a plan view; a first resin layer disposed between the first barrier layer and the inorganic member and connecting the first barrier layer and the inorganic member; and a second resin layer disposed between the second barrier layer and the inorganic member and connecting the second barrier layer and the inorganic member.

Abstract: Provided is a solid electrolyte material for a fluoride ion battery. The solid electrolyte material includes: a metal composite fluoride containing: a lanthanoid metal; an alkali earth metal; and fluorine. The metal composite fluoride has, in an infrared absorption spectrum thereof, a ratio of a maximal value of absorption in a wave number range of 3,150 cm?1 or greater and 3,250 cm?1 or smaller to a maximal value of absorption in a wave number range of 400 cm?1 or greater and 450 cm?1 or smaller, that is 0.10 or smaller.

Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.

Abstract: Provided is a positive electrode active material for a non-aqueous electrolyte secondary battery, the active material including a lithium-transition metal composite oxide containing lithium, nickel, cobalt, and manganese, having a layered structure, having a ratio D50/DSEM of from 1 to 4, and having a ratio of a number of moles of nickel to a total number of moles of metals other than lithium of greater than 0.8 and less than 1, a ratio of a number of moles of cobalt to the total number of moles of metals other than lithium of less than 0.2, a ratio of a number of moles of manganese to the total number of moles of metals other than lithium of less than 0.2, and a ratio of the number of moles of manganese to a sum of the number of moles of cobalt and the number of moles of manganese of less than 0.58.

Abstract: A light-emitting device includes light-emitting elements connected through a wiring pattern, at least one wire electrically connecting a portion of the wiring pattern to another portion of the wiring pattern, and a reflective member covering a region of the mounting board except for the wiring pattern. The wiring pattern includes wire connection regions at such a distance from each other as to allow the wire to connect the connection regions to each other. The connection regions being used to connect the light-emitting elements in series and/or in parallel by the wire in any one pattern of a plurality of connection patterns with different numbers of series and parallel connections. A plurality of rows of light-emitting elements each constituted of part of the light-emitting elements are disposed on the wiring pattern. The wiring pattern includes an extending portion provided outside of the rows and not provided between the rows.

Abstract: A semiconductor laser device includes: a housing including: a first upper upward-facing surface, a mounting surface below the first upper upward-facing surface, inner lateral surfaces including a first inner lateral surface and a second inner lateral surface facing the first inner lateral surface, wherein the first upper upward-facing surface and the mounting surface are formed inward of the inner lateral surfaces, and a first wiring part disposed on the first upper upward-facing surface; a semiconductor laser element including: a light output surface, a first lateral surface extending from the light output surface and facing the first inner lateral surface, and a second lateral surface extending from the light output surface and opposite to the first lateral surface; and a first wire connected to the first wiring part for electrical connection of the semiconductor laser element.

Abstract: A light-emitting device includes: a first light-emitting element and a second light-emitting element, each configured to be independently driven; a wall portion located between the first light-emitting element and the second light-emitting element; a lateral resin portion entirely surrounding the first light-emitting element and the second light-emitting element; a first light-transmissive member that is separated from the second light-emitting element by the wall portion, covers at least a portion of lateral surfaces of the first light-emitting element, and contains a first wavelength converting member; and a second light-transmissive member that covers the first light-emitting element, the second light-emitting element, and the first light-transmissive member in a plan view, and contains a second wavelength converting member.