Abstract: A light emitting device includes: a plurality of sub-mounts including at least a first sub-mount and a second sub-mount; a plurality of semiconductor laser elements including a first semiconductor laser element mounted on the first sub-mount and a second semiconductor laser element mounted on the second sub-mount; a plurality of protective elements including a first protective element mounted on the first sub-mount and a second protective element mounted on the second sub-mount; and a plurality of wires including a first wire, wherein a first end of the first wire is joined to the first protective element and a second end of the first wire is joined to the second sub-mount, and wherein the first wire overlaps a portion of the first semiconductor laser element in a top view.

Abstract: A method of producing a magnetic powder includes performing a phosphorus treatment to obtain a phosphorus compound and a rare earth-iron-nitrogen-based magnetic powder, the phosphorus treatment including adding an inorganic acid to a slurry containing: a rare earth-iron-nitrogen-based magnetic powder containing R, Fe, and N, where R represents at least one of rare earth elements selected from the group consisting of Y, Ce, Pr, Nd, Gd, Tb, Dy, Ho, Er, Tm, Lu, and Sm, and if R contains Sm, Sm constitutes less than 50 atm % of a total R atomic content; water; and a phosphorus-containing substance.

Abstract: A method of producing a cylindrical bonded magnet includes providing a mold including an inner mold portion, an outer mold portion, a first orientation magnet, and a second orientation magnet, and performing molding to obtain a cylindrical bonded magnet by filling a region between the outer surface of the inner mold portion and the inner surface of the outer mold portion with a resin composition. When viewed in a cross-section, a first distance is shorter than a second distance, the first distance is a straight line distance along a magnetic field application direction and is tangent to a circle defined by the inner surface of the outer mold portion, and the second distance is a straight line distance along the magnetic field application direction and passes through a center of a circle defined by the outer surface of the inner mold portion.

Abstract: Provided is a solid electrolyte material for fluoride ion batteries which has high fluoride ion conductivity. The solid electrolyte material for fluoride ion batteries includes a metal composite fluoride that includes, as its main phase, a crystal structure containing, in a fluorite structure containing a fluoride ion, a lanthanoid metal ion, and an alkali earth metal ion, an adduct ion having an ion radius larger than that of the alkali earth metal ion. The metal composite fluoride has a composition in which a ratio of a number of moles of the fluoride ion to a total number of moles of the lanthanoid metal ion, the alkali earth metal ion, and the adduct ion is greater than 1.87 and is smaller than 3, and a ratio of a number of moles of the adduct ion to a number of moles of the alkali earth metal ion is smaller than 1.

Abstract: A method of manufacturing a light-emitting element includes: preparing a wafer including a substrate, and a semiconductor structure disposed on the substrate; and forming a plurality of light-emitting element regions by dividing the semiconductor structure. The forming of the plurality of light-emitting element regions includes: forming a plurality of first masks on the semiconductor structure such that each of the plurality of first masks covers a respective first region where one of the plurality of light-emitting element regions is to be formed, and each of the plurality of first masks has an area greater than an area of the respective first region in a plan view, and exposing the substrate through the semiconductor structure by removing a portion of the semiconductor structure that is not covered by the plurality of first masks.

Abstract: A light emitting device includes: a light emitting unit; an optical member configured to transmit or pass light emitted by the light emitting unit, the optical member including: a first region configured to transmit or pass light having a first chromaticity; and a second region configured to transmit or pass light having a second chromaticity different from the first chromaticity; and a movable member configured to move to change a distance between the light emitting unit and the optical member along an optical axis of the light emitting unit.

Abstract: A nitride semiconductor light emitting element includes: n-side and p-side nitride semiconductor layers; and an active layer. The active layer includes a plurality of well layers and a plurality of barrier layers. The plurality of well layers include first well layers, and second well layers positioned closer to the p-side nitride semiconductor layer than the first well layers. At least one of the plurality of barrier layers positioned between the first well layers and at least one of the plurality of barrier layers positioned between the second well layers respectively include a first barrier layer containing an n-type impurity, and a second barrier layer, wherein a concentration of the n-type impurity in the second barrier layer is lower than a concentration of the n-type impurity in the first barrier layer, and wherein the second barrier layer is positioned closer to the p-side nitride semiconductor layer than the first barrier layer.

Abstract: A Sm—Fe—N-based rare earth magnet more resistant to demagnetization than ever before in an environment where an external magnetic field is applied, particularly at high temperatures, and a production method thereof are provided. The present disclosure presents a production method of a rare earth magnet, including preparing a coated magnetic powder, compression-molding the coated magnetic powder in a magnetic field to obtain a magnetic-field molded body, pressure-sintering the magnetic-field molded body to obtain a sintered body, and heat-treating the sintered body, and a rare earth magnet obtained by the method. D50 of the magnetic powder in the coated magnetic powder is 1.50 ?m or more and 3.00 ?m or less, the content ratio of the zinc component in the coated magnetic powder is 3 mass % or more and 15 mass % or less, and the heat treatment temperature is 350° C. or more and 410° C. or less.

Abstract: A planar light source includes a first substrate including a first part and a second part; a light source located at an upper surface side of the first part; a light guide member located at the upper surface side of the first part; and a circuit member overlapping the light guide member in a direction parallel to an upper surface of the first part. The circuit member includes a second substrate located at an upper surface side or a lower surface side of the second part, and an electronic element located on the second substrate.

Abstract: A method of cultivating algal cells of an algae belonging to a class selected from Chlorophyceae, Euglenophyceae, Bacillariophyceae and Haptophyceae includes: irradiating the algal cells with an artificial light having a ratio of (i) photon flux density in a wavelength range of 520-630 nm to (ii) photosynthetic photon flux density, that is 65% or more; and measuring a cell size of the algal cells. Irradiation and non-irradiation of the algal cells with the artificial light are switched, or the photon flux density in the wavelength range of 520-630 nm is changed, according to the measured cell size.

Abstract: A method of producing a transmission grating includes: providing first and second glass plates, each having a first main surface defining a plurality of elongated reverse trapezoidal grooves, each having a reverse trapezoidal shape in a vertical cross-section and being defined by a first wall, a second wall, and a bottom surface, wherein the elongated reverse trapezoidal grooves are formed at an uniform interval, thus defining a plurality of elongated trapezoidal protrusions, each having a first wall, a second wall, and an upper surface; engaging the elongated trapezoidal protrusions of the first glass plate with the elongated reverse trapezoidal grooves of the second glass plate; and fitting the first walls of the protrusions with the first walls of the grooves and closely fitting the upper surfaces of the protrusions with the bottom surfaces of the grooves, and bonding the first glass plate to the second glass plate.

Abstract: A nitride semiconductor light emitting element includes: an n-side semiconductor layer; a p-side semiconductor layer; and an active layer positioned between the n-side semiconductor layer and the p-side semiconductor layer. The active layer includes, successively from a n-side semiconductor layer side: a first barrier layer containing Al and an n-type impurity, a first well layer containing Al and emitting ultraviolet light, a second barrier layer containing Al, and a second well layer containing Al and emitting ultraviolet light. A highest n-type impurity concentration peak in the first barrier layer is located in a portion of the first barrier layer that is closer to the p-side semiconductor layer than to the n-side semiconductor layer. An Al composition ratio of the first barrier layer is higher than an Al composition ratio of the second barrier layer.

Abstract: A metallic structure for an optical semiconductor device, including a base body having disposed thereon at least in part metallic layers in the following order; a nickel or nickel alloy plated layer, a gold or gold alloy plated layer, and a silver or silver alloy plated layer, wherein the silver or silver alloy plated layer has a thickness in a range of 0.001 ?m or more and 0.01 ?m or less.

Abstract: An oxide fluorescent material has a composition represented by the following formula (1). (Mg1-sM1s)2(Al1-tM2t)u(Ge1-vM3v)wOx:Cry,M4z??(1) wherein M1 represents at least one element selected from the group consisting of Ca, Sr, Ba, and Zn; M2 represents at least one element selected from the group consisting of Ga, Sc, and In; M3 represents at least one element selected from the group consisting of Si, Ti, Zr, Sn, and Hf; M4 represents at least one element selected from the group consisting of Ni, Ce, Eu, Fe, Mn, Nd, Tm, Ho, Er, and Yb; and s, t, u, v, w, x, y, and z satisfy 0?s?1.0, 0?t?1.0, 1.5?u?2.5, 0?v?0.5, 3.0?w?6.0, 11.0?x?17.0, 0.005?y?1.0, and 0?z?0.5.

Abstract: An oxide fluorescent material has a composition represented by the following formula (1): (Mg1-pM1p)q(Li1-rM2r)s(In1-tM3t)u(Ge1-vM4v)wOx:Cry,M5z??(1) wherein M1 represents at least one element selected from the group consisting of Ca, Sr, Ba, and Zn; M2 represents at least one element selected from the group consisting of Na, K, Rb, and Cs; M3 represents at least one element selected from the group consisting of Al, Ga, and Sc; M4 represents at least one element selected from the group consisting of Si, Ti, Zr, Sn, and Hf; M5 represents at least one element selected from the group consisting of Ni, Ce, Eu, Fe, Mn, Nd, Tm, Ho, Er, and Yb; and p, q, r, s, t, u, v, w, x, y, and z satisfy 0?p?1.0, 0.1?q?0.9, 0?r?1.0, 0.05?s?0.45, 0?t?0.5, 0.05?u?0.45, 0?v?1.0, 0.8?w?1.3, 2.6?x?3.6, 0.002?y?0.5, 0?z?0.3, and 0.9?q+s+u?1.2.

Abstract: A nitride semiconductor light emitting element includes: an n-side semiconductor layer; a p-side semiconductor layer; an active layer positioned between the n-side semiconductor layer and the p-side semiconductor layer; and an electron blocking layer positioned between the p-side semiconductor layer and the active layer. The active layer includes, successively from the n-side semiconductor layer side: a first barrier layer containing Al, a first well layer that contains Al and emits ultraviolet light, a second barrier layer containing Al, and a second well layer that is in contact with the electron blocking layer, contains Al, and emits ultraviolet light. An Al composition ratio of the second well layer is higher than an Al composition ratio of the first well layer. A thickness of the second well layer is less than a thickness of the first well layer.

Abstract: A wavelength conversion member includes three or more light-emitting portions, and two or more light shielding layers. Each of the three or more light-emitting portions has a phosphor, is separated from each other, and is disposed to be aligned in a first direction. Each of the two or more light shielding layers is disposed between the two light-emitting portions adjacent to each other. The light-emitting portion and the light shielding layer are alternately aligned in the first direction. In the first direction, a length of each of the light-emitting portions is in a range of 0.3 mm to 2.0 mm. An interval in the first direction between the two light-emitting portions adjacent to each other is in a range of 0.1 mm to 2.0 mm.

Abstract: A light-emitting device includes: a substrate having an upper surface; at least one light-emitting element on or above the substrate, the at least one light-emitting element having a rectangular shape in a plan view from above the light-emitting device and having an upper surface serving as a light-emitting surface of the at least one light-emitting element; a plate-shaped light-transmissive member having a rectangular shape in a plan view from above the light-emitting device and having a lower surface that faces the upper surface of the at least one light-emitting element; and a light-guiding member that is disposed between the light-emitting element and the light-transmissive member.

Abstract: A wiring board includes: an insulating member having a first upper surface, and a second upper surface located higher than the first upper surface; and a first wiring layer located on the first upper surface. The first upper surface has a wiring region that does not overlap with the second upper surface in a top view, and that is located in an exposed region. The first wiring layer extends from the wiring region to a connecting region that is connected to the wiring region, that overlaps with the second upper surface in a top view, and that is not exposed. The first wiring layer comprises a first pad portion located in the wiring region, and a first pattern portion located in the connecting region.

Abstract: A method of manufacturing a light emitting device including: providing an intermediate structure including an light emitting element and a support body; securing a plate-shaped intermediate resin member and the light emitting element with a light-transmissive member such that the intermediate resin member includes first resin extended portions extending outwardly in the first direction respectively from both short sides of the light emitting element in a plan view; cutting the intermediate resin member at cutting positions along the second direction to obtain a resin member with a concave lower surface, a maximum distance from the light emitting element to a respective one of the cutting positions in the first direction being longer than a maximum length of the light emitting element in the second direction; and forming a covering member to cover lateral surfaces of the resin member such that an upper surface of the resin member is exposed.