Abstract: An image display device includes: a light-transmitting substrate including a first surface; a circuit element located on the first surface; a first wiring layer electrically connected to the circuit element; a first insulating film covering the circuit element and the first wiring layer on the first surface; a conductive layer that comprises a light-reflective part and is located on the first insulating film; a first light-emitting element located on the light-reflective part and electrically connected to the light-reflective part; a second insulating film covering the first insulating film, the conductive layer, and at least a portion of the first light-emitting element; a second wiring layer located on the second insulating film, the second wiring layer being electrically connected to a surface of the first light-emitting element; and a first via extending through the first and second insulating films and electrically connecting the first wiring layer and the second wiring.

Abstract: A semiconductor laser element includes a semiconductor multilayer portion including an active layer, the semiconductor multilayer portion including (i) a first region including a diffraction grating and (ii) a second region configured to cause laser light to propagate in multiple transverse modes in the second region, the second region including a core region and cladding regions provided on two opposite sides of the core region; at least one electrode disposed on the semiconductor multilayer portion; and a current shielding structure. The semiconductor laser element has a waveguide structure. In a top view, the first region includes a central region where light entering from the second region is propagated and a peripheral region located outward of the central region. In a top view, the current shielding structure is located at a position at least partially overlapping the peripheral region.

Abstract: A light emitting device includes: a substrate; a light emitting element; a wavelength conversion layer; and a wall surrounding the wavelength conversion layer, having an opening portion exposing at least a part of a top surface of the wavelength conversion layer, and containing a light reflective material. The surface of the wall includes a top surface provided at a higher position than the top surface of the wavelength conversion layer, and an inner surface forming the opening portion. The wall includes a first portion surrounding the wavelength conversion layer, and a second portion provided over the first portion and surrounding the first portion. The opening portion is hollow. An angle of a corner portion between the top surface and the inner surface of the wall is in a range of 90 degrees or greater and less than 180 degrees.

Abstract: Provided a method for producing a nitride phosphor. The method includes preparing a mixture that comprises a first nitride and a cerium source, the first nitride comprising, as a host crystal, a crystal having the same crystal structure as CaAlSiN3; and performing a heat treatment of the mixture at a temperature of 1,300° C. to 1,900° C. to obtain a second nitride. The first nitride comprises aluminum, silicon, nitrogen, and at least one selected from the group consisting of lithium, calcium, and strontium.

Abstract: A light-emitting device includes: a plurality of light-emitting elements arranged in an array on a base member; and a lens that includes at least one lens part disposed above the base member and including a first surface that faces the plurality of light-emitting elements, the first surface including a plurality of protrusions. The plurality of light-emitting elements include: a first light-emitting element having a center that faces a lens center of the lens in a top view, and a second light-emitting element having a center offset from the lens center of the lens in the top view. A red component of light emitted from the second light-emitting element is greater than a red component of light emitted from the first light-emitting element.

Abstract: A light emitting device includes a substrate, a light emitting element, and a light reflecting member. The substrate includes a pair of connection terminals on a first main surface. The light emitting element is connected to the connection terminals by a molten material. The light reflecting member covers the light emitting element. The connection terminals each has a protruding portion at a position connected to the light emitting element over the first main surface of the substrate, the protruding portion protruding toward the light emitting element. The molten material covers a side surface of the protruding portion of each of the connection terminals. The protruding portion of each of the connection terminals, the molten material, and a space between the substrate and the light emitting element are embedded by the light reflecting member.

Abstract: A light emitting device includes: an inner light emitting part including an inner light emitting element, and an inner wavelength conversion member disposed on the inner light emitting element, and a plurality of outer light emitting parts disposed around the inner light emitting part and connected in parallel to one another, each outer light emitting part including an outer light emitting element, and an outer wavelength conversion member disposed on the outer light emitting element. The outer light emitting parts include a first light emitting part that includes a first light emitting element and a first wavelength conversion member, and a second light emitting part that includes a second light emitting element and a second wavelength conversion member.

Abstract: A light-emitting device includes: a light-emitting element emitting a first light having a first peak wavelength; a first wavelength conversion member contacting a side surface of the light-emitting element and including a wavelength conversion material absorbing at least a portion of the first light and emitting a second light having a second peak wavelength different from the first peak wavelength; a second wavelength conversion member on the first wavelength conversion member, the second wavelength conversion member including a wavelength conversion material absorbing at least a portion of the first light and emitting a third light having a third peak wavelength different from the first and second peak wavelengths; and a first light-reflective member on the second wavelength conversion member and at least on the light-emitting element. A continuous light-emitting surface includes a side surface of the first wavelength conversion member and a side surface of the second wavelength conversion member.

Abstract: A light-emitting module includes: a light-emitting device; and a base that is electroconductive, the base including: a mounting surface that faces a first direction and on which the light-emitting device is mounted with a bonding material, and at least one protrusion that is adjacent to the mounting surface in a direction intersecting the first direction and protrudes in the first direction with respect to the mounting surface. The at least one protrusion includes a plurality of first surfaces that are in contact with the light-emitting device. The light-emitting device includes a light-emitting element and has a side surface at which an electroconductive part electrically connected to an electrode of the light-emitting element is exposed. The side surface is partially in contact with the first surfaces, and a part of the side surface at which the electroconductive part is exposed is not in contact with the first surfaces.

Abstract: The aim is to provide a light emitting element and a light emitting device that can achieve higher light extraction efficiency. A light emitting element comprises a substrate, a semiconductor structure disposed on the substrate and including successively from the substrate side an n-side semiconductor layer, an active layer, and a p-side semiconductor layer, a p-electrode disposed on and electrically connected to the p-side semiconductor layer, and an n-electrode disposed on and electrically connected to the n-side semiconductor layer. The n-electrode includes a base and a plurality of extended parts extending from the base. The substrate includes an exposed portion exposed from the semiconductor structure, and the exposed portion includes a first exposed portion positioned between two adjacent extended parts and a second exposed portion disposed in the peripheral portion of the substrate and connected to the first exposed portion in a top view.

Abstract: A light source unit includes: a display device configured to emit light that has a substantially Lambertian light distribution and to display a picture; a first prism sheet on which the light emitted from the display device is incident; and an imaging optical system that includes an input element on which light emitted from the first prism sheet is incident and an output element on which light that has passed through the input element is incident, and configured such that light emitted from the output element forms a first image corresponding to the picture. The imaging optical system has a substantially telecentric property on a side of the first image.

Abstract: A light source device includes: a combined body comprising light emitting portions including: a first light emitting portion comprising a first light emitting element, and a second light emitting portion provided separately from and along an outer periphery of the first light emitting portion in a plan view, the second light emitting portion comprising a plurality of second light emitting elements; and a lens disposed above the combined body. The first light emitting element and the plurality of second light emitting elements are arrayed in first and second directions that are perpendicular to each other. The first light emitting element and the plurality of second light emitting elements are controllable to be lit independently.

Abstract: Fluorescent material composite particles include translucent inorganic particles having a volume average particle diameter in a range of 30 nm or more and 500 nm or less, fluorescent nanoparticles having an average particle diameter in a range of 5 nm or more and 25 nm or less, and a first resin. At least a part of each of the translucent inorganic particles are embedded in the first resin. The translucent inorganic particles are unevenly distributed to a surface of the fluorescent material composite particles. The fluorescent material composite particles have a volume average particle diameter in a range of 0.5 ?m or more and 50 ?m or less.

Abstract: A light-emitting device includes a light-emitting element, a light-transmissive member, and a first light adjustment member. The light-transmissive member has a first upper surface, a second upper surface, a lower surface facing a first surface of a support substrate of the light-emitting element, a first lateral surface contiguous with the first upper surface and the second upper surface, a second lateral surface contiguous with the second upper surface and the lower surface, and a third lateral surface contiguous with the first upper surface and the lower surface. The first light adjustment member exposes the first upper surface of the light-transmissive member and covers the second upper surface and the first lateral surface of the light-transmissive member. The light-transmissive member and the first light adjustment member collectively define a rectangular cross-sectional shape.

Abstract: A method of producing a positive electrode active material, the method includes: contacting first particles that contain a lithium transition metal composite oxide with a solution containing sodium ions to obtain second particles containing the lithium transition metal composite oxide and sodium element, wherein the lithium transition metal composite oxide has a layered structure and a composition ratio of a number of moles of nickel to a total number of moles of metals other than lithium in a range of from 0.7 to less than 1; mixing the second particles and a boron compound to obtain a mixture; and heat-treating the mixture at a temperature in a range of from 100° C. to 450° C.

Abstract: An image display device includes: a display device configured to display an image; a liquid crystal element on which light emitted from the display device is incident, the liquid crystal element being configured to selectively allow one of P-polarized light or S-polarized light to exit the liquid crystal element; a reflective polarizing member configured to reflect the one of the P-polarized light or the S-polarized light that has exited the liquid crystal element and to transmit the other of the P-polarized light or the S-polarized light; and a reflecting member configured to reflect the other of the P-polarized light or the S-polarized light in the same direction as a travel direction of the one of the P-polarized light or the S-polarized light reflected by the reflective polarizing member.

Abstract: A method for manufacturing an image display device includes: providing a second substrate that comprises a first substrate, and a semiconductor layer on the first substrate, the semiconductor layer comprising a light-emitting layer; providing a third substrate comprising a circuit, the circuit comprising a circuit element; bonding the semiconductor layer to the third substrate; forming a light-emitting element by etching the semiconductor layer; covering the light-emitting element with a light-transmissive insulating member; and forming a wiring layer electrically connecting the light-emitting element to the circuit element; wherein: the light-emitting element has a light-emitting surface opposite to a surface of the light-emitting element that is bonded to the third substrate; and the insulating member is configured to cause light radiated from the light-emitting element to have a light distribution in a normal direction of the light-emitting surface toward a light-emitting surface side.

Abstract: A method for manufacturing a light-emitting device includes: providing a structure including: a substrate including a plurality of positive and negative wiring parts at an upper surface of the substrate, and a light source part disposed on the substrate, the light source part including: an element substrate, and a plurality of light-emitting parts, each of the light-emitting parts including: a semiconductor structure including a first surface facing the element substrate and a second surface positioned at a side opposite to the first surface, and positive and negative electrode parts disposed on the second surface of the semiconductor structure; providing a mold including an upper mold and a lower mold; disposing a first resin part between the upper surface of the substrate and the second surfaces of the semiconductor structures; and removing the element substrate from the light source part.

Abstract: A method of manufacturing a light-emitting device includes: preparing at least one first structure including a support substrate, an adhesive layer, and light-emitting elements each having a first surface, and a second surface, and comprising a pair of element electrodes disposed on a second surface side; preparing a second structure including a substrate including a base and a plurality of pairs of wirings, and a bonding member disposed between a pair of wirings of the plurality of pairs of wirings; obtaining a third structure by causing the pair of element electrodes to face the pair of wirings and bonding each of light-emitting elements to the substrate with the bonding member interposed therebetween in a state in which the light-emitting elements and the substrate are heated at a first temperature; heating the third structure at a second temperature equal to or higher than the first temperature; and removing the support substrate from the third structure.

Abstract: A method of manufacturing a light-emitting device includes: providing a substrate including a base, and a pair of wiring parts disposed on an upper surface side of the base; providing a light-emitting element including a semiconductor structure, and a pair of electrodes; disposing the light-emitting element above the substrate such that the electrodes face the wiring parts; disposing an electrically-conductive member containing copper such that the electrically-conductive member electrically connects the wiring parts to the electrodes and includes a body portion and a protruding portion, the body portion overlapping a corresponding wiring part of the wiring parts in a top view, and the protruding portion protruding outward such that a gap is located between the protruding portion and the base; and disposing a protective film at least in the gap in a state in which the gap is widened by heating the electrically-conductive member.