Abstract: A semiconductor device includes: a semiconductor element; a submount on which the semiconductor element is mounted, wherein the submount has a first surface on which the semiconductor element is mounted, a second surface located on a side opposite the first surface, and a lateral surface located between the first surface and the second surface, and wherein the submount comprises: a groove located at the second surface, a heat dissipation portion located at the second surface, and an electrode pattern located at the first surface; a package substrate on which the submount is mounted; a first joint member that physically joins the heat dissipation portion to the package substrate; and a connection portion located on the side surface, wherein the connection portion electrically connects the electrode pattern and the package substrate, and the connection portion comprises a second joint member.
Abstract: A light emitting device includes a base including a support having a support surface. A light emitting element includes a semiconductor layer and a sapphire substrate provided on the semiconductor layer opposite to the support surface. A reflecting film provided on the sapphire substrate. A light-transmissive covering member is provided on the support surface. A height of the light-transmissive covering member viewed in a direction in which a width of the light-transmissive covering member appears smallest is 0.5 times or less of the width of the light-transmissive covering member. A light reflecting layer is provided on a first region of the base such that a first reflectivity in the first region of the base being higher than a second reflectivity in a second region of the base, the second region overlapping with the light emitting element and being surrounded by the first region as viewed in the height direction.
Abstract: A method of manufacturing a wavelength conversion member that includes a sintered body having a light incidence face, a light emission face, and a light reflecting face different from the light incidence face and the light emission face, the method comprising: providing a sintered body containing inorganic particles and phosphor particles, and forming a plurality of recessed portions on the light reflecting face of the sintered body, which comprises acid treating the sintered body.
Abstract: Provided is a method of manufacturing a light emitting module, the method including: providing a light guiding plate having a first main surface serving as a lighting surface, and a second main surface opposite to the first main surface, the second main surface defining a recess thereon, preparing a light emitting element unit by attaching a wavelength conversion portion to a light emitting element having electrodes and a light emitting surface; providing a light diffusion portion at a bottom of the recess; depositing the light emitting element unit onto the light diffusion portion in the recess; and forming a terminal having an electrical conductivity on the electrodes of the light emitting element.
Abstract: A lighting device includes: a light emission part; a reflector disposed above the light emission part and configured to reflect a first portion of light emitted from the light emission part; a first lens having a first incident face through which light reflected by the reflector enters; a second lens disposed higher than the first lens, and having a second incident face through which a second portion of the light emitted from the light emission part enters, wherein the second incident face is father than the first incident face from the light emission part; a first light shielding member disposed between the first lens and the second lens; a second light shielding member between the light emission part and the first lens; a third light shielding member between the light emission part and the second lens; and an actuator configured to move the second and third light shielding members.
Abstract: Provided are a ceramic complex capable of improving the luminous efficiency, a projector comprising a ceramic complex, and a method for producing a ceramic complex. Proposed is a ceramic complex including a rare earth aluminate fluorescent material having an average particle diameter in a range of 15 ?m or more and 40 ?m or less, aluminum oxide having a purity of aluminum oxide of 99.0% by mass or more, and voids, wherein the content of the rare earth aluminate fluorescent material is in a range of 15% by mass or more and 50% by mass or less relative to a total amount of the rare earth aluminate fluorescent material and the aluminum oxide, and a void fraction is in a range of 1% or more and 10% or less.
April 3, 2019
Date of Patent:
January 11, 2022
Seigo Sunagawa, Shozo Taketomi, Yasuaki Mashima, Takafumi Sumie
Abstract: A method for producing a nickel cobalt complex hydroxide includes first crystallization of supplying a solution containing Ni, Co and Mn, a complex ion forming agent and a basic solution separately and simultaneously to one reaction vessel to obtain nickel cobalt complex hydroxide particles, and a second crystallization of, after the first crystallization, further supplying a solution containing nickel, cobalt, and manganese, a solution of a complex ion forming agent, a basic solution, and a solution containing said element M separately and simultaneously to the reaction vessel to crystallize a complex hydroxide particles containing nickel, cobalt, manganese and said element M on the nickel cobalt complex hydroxide particles crystallizing a complex hydroxide particles comprising Ni, Co, Mn and the element M on the nickel cobalt complex hydroxide particles.
Abstract: A method of manufacturing a light emitting element mounting base member includes: providing a first insulating member in a plate shaped having at least one recess portion or at least one through-hole; disposing in the recess portion or in the through-hole a light blocking resin and a plurality of core members each equipped with a second insulating member having light reflectivity on each surface of a plurality of electrical conductor cores; and exposing at least one of the surface of the electrical conductor cores from the second insulating members by removing each part of at least one of the second insulating members.
Abstract: A method for manufacturing a light-emitting device includes: a mounting step; a light-shielding frame placement step; a light-transmissive member placement step; a light-guiding supporting member formation step; a light-guiding supporting member bonding step; and a second light-reflective member formation step.
Abstract: A light emitting device includes: a lightguide plate including a first surface on which a plurality of first recesses are provided; a light-reflective resin layer located on a bottom portion of each first recess; a plurality of light emitting elements each having an upper surface and a lateral surface, wherein each one of the plurality of light emitting elements is arranged in a corresponding one of the plurality of first recesses; and a plurality of wavelength conversion members, wherein: the upper surface of each light emitting element is attached to the light-reflective resin layer; and each of the plurality of wavelength conversion members covers the lateral surface of the light emitting element in the first recess.
Abstract: A light-emitting module includes: a plurality of light sources; and a lightguide plate including a plurality of light source placement sections, in each of which at least one light source is arranged, arrayed in a first direction and a second direction orthogonal to the first direction. The lightguide plate defines at least one first-A light control groove and at least one first-B light control groove that extend parallel to the second direction between a first light source placement section and a second light source placement section adjacent to the first light source placement section in the first direction, and at least one second-A light control groove and at least one second-B light control groove that extend parallel to the first direction between the first light source placement section and a third light source placement section adjacent to the first light source placement section in the second direction.
Abstract: A light emitting device includes: a base including: a first lead including: a first A surface, a first B surface opposite to the first A surface, and a first C surface located between the first A surface and the first B surface and defining at least one first protrusion, a second lead separated from the first lead, and a resin body covering the first C surface and holding the first lead and the second lead; a light emitting element disposed on the first A surface; and a protecting member disposed continuously on at least a portion of the first A surface and in at least a portion of a gap between the first protrusion and the resin body. In a cross-sectional view, the first protrusion extends from a first end portion of the first A surface at a second lead side toward the second lead.
Abstract: A metallic structure for an optical semiconductor device including a conductive base body having disposed thereon metallic layers in the following order: a nickel or nickel alloy plated layer, a gold or gold alloy plated layer, and an indium or indium alloy plated layer, wherein the indium or indium alloy plated layer has a thickness in a range of 0.002 ?m or more and 0.3 ?m or less.
Abstract: A method of manufacturing a light-emitting device includes: growing a layered structure on a substrate, the layered structure comprising an n-side nitride semiconductor layer, a first light-emitting layer, and a first p-side nitride semiconductor layer; growing an upper n-type semiconductor layer over the first p-side nitride semiconductor layer; forming a protective film over the upper n-type semiconductor layer, the protective film containing an element that functions as an n-type impurity for the upper n-type semiconductor layer; heating at least the upper n-type semiconductor layer and the protective film; at least partially removing the protective film to expose a surface of the upper n-type semiconductor layer; and forming a first p-side electrode on the exposed surface of the upper n-type semiconductor layer.
Abstract: A heating device for being attached to and heating a heated object that requires to be heated and has an uneven exterior shape. The heating device including: a conductive member having thermal conductivity and being configured to be attached to a recess of the heated object; and a heater configured to cover and heat the heated object and the conductive member in a state where the conductive member is attached to the recess of the heated object. The heater has a portion to be in contact with a bulge portion of the heated object in a state where the conductive member is attached to the recess of the heated object and where the heated object and the conductive member are covered with the heater.
Abstract: A method of manufacturing a light-emitting element includes: providing a semiconductor structure including: a first layer containing gallium and nitrogen, a second layer of a first conductive type, the second layer containing gallium, aluminum, and nitrogen and being located on or above the first layer, an active layer located on or above the second layer, and a third layer of a second conductive type, the third layer located on or above the active layer, wherein a thickness of the first layer is larger than a thickness of the second layer; performing chemical-mechanical polishing from a first layer side to reduce the thickness of the first layer; and performing dry etching from the first layer side to remove the first layer and reduce the thickness of the second layer.
Abstract: A light emitting module includes a substrate; at least one light emitting device each including: at least one light emitting element each including: a semiconductor layered structure having a lower surface, an upper surface, and lateral surfaces, and electrodes on the lower surface of the semiconductor layered structure; a light-reflecting part having a lower surface and covering at least the lateral surfaces and the lower surface of the semiconductor layered structure, at least one recessed portion being formed in the lower surface of the light-reflecting part; and a light-transmitting part located over the light-reflecting part and covering an upper surface side of the semiconductor layered structure; an electrically conductive bonding member configured to bond the substrate and the electrodes of each of the at least one light emitting device; and a covering resin spaced apart from the light-transmitting part and disposed at least in the at least one recessed portion and around at least one of the at least
Abstract: A display device includes a light-emitting module and a light-diffusing sheet stacked body. The light-emitting module includes at least one light guide plate including an upper surface and a lower surface, and light sources disposed at the lower surface side of the light guide plate. The light-diffusing sheet stacked body includes a first light-diffusing sheet disposed on the light guide plate, a second light-diffusing sheet disposed on the first light-diffusing sheet, and a third light-diffusing sheet disposed on the second light-diffusing sheet. The first light-diffusing sheet includes first protrusions at an upper surface side thereof. The second light-diffusing sheet includes second protrusions at an upper surface side thereof. The third light-diffusing sheet includes third protrusions at an upper surface side thereof. A shape of the third protrusion may be different from a shape of the first protrusions and/or a shape of the second protrusions.
Abstract: A light emitting device includes one or more light emitting elements and a plurality of fluorescent materials, and emits a first light, a second light, and a third light, wherein the first light has a correlated color temperature between 1,500 K and 3,500 K and a color rendering index R9 of 50 or more, the second light has a correlated color temperature between 3,500 K and 5,500 K and a color rendering index R9 of 50 or more, the third light has values of X and Y coordinates in the chromaticity diagram of the CIE1931 color system smaller than the values of X and Y coordinates at a color temperature of 5,500 K on the black body radiation locus, and a light having a correlated color temperature of 6,500 K has a color rendering index R9 of 50 or more and a melanopic ratio of 1.0 or more.
Abstract: A method for producing a ceramic complex includes: preparing a raw material mixture that contains 5% by mass or more and 40% by mass or less of first rare earth aluminate fluorescent material particles containing an activating element and a first rare earth element different from the activating element, 0.1% by mass or more and 32% by mass or less of oxide particles containing a second rare earth element, and the balance of aluminum oxide particles, relative to 100% by mass of the total amount of the first rare earth aluminate fluorescent material particles, the oxide particles, and the aluminum oxide particles; preparing a molded body of the raw material mixture; and obtaining a sintered body by calcining the molded body in a temperature range of 1,550° C. or higher and 1,800° C. or lower.