Abstract: Alight source device includes a resonator having first and second mirrors, a gain medium disposed between the first and second mirrors and including a first semiconductor portion, an active layer, and a second semiconductor portion arranged in this order in a direction perpendicular to an optical axis of the resonator, and having first and second principal surfaces respectively located on sides of the first and second semiconductor portions opposite to sides on which the active layer is provided, a first heat dissipation member located on a first principal surface side of the gain medium, and a second heat dissipation member located on a second principal surface side of the gain medium. The resonator and the gain medium are arranged such that the optical axis passes through the gain medium.

Abstract: Provided is a method for manufacturing a semiconductor nanoparticle, the method includes performing a heat treatment of a first mixture containing a silver (Ag) salt, an alkali metal salt, a salt containing at least one of indium (In) and gallium (Ga), a sulfur source, and an organic solvent. A ratio of the number of atoms of an alkali metal to the total number of atoms of Ag and the alkali metal in the first mixture is greater than 0 and less than 1.

Abstract: A method of manufacturing an optical member includes forming a first layer on a light transmissive substrate by atomic layer deposition, converting a surface layer of the first layer into a boehmite layer, and forming a second layer by atomic layer deposition so as to cover the boehmite layer. The first layer includes aluminum oxide and has a first thickness. The second layer has a second thickness less than the first thickness.

Abstract: A light emitting device includes: a mounting board; a light source positioned on the mounting board; a light diffusion plate; a diffuse reflector positioned between the mounting board and the light diffusion plate, and above at least part of an emission face of the light source; and a wavelength conversion layer positioned on or above the diffuse reflector.

Abstract: A light emitting device includes: a mounting substrate comprising a mounting substrate first surface; a first light emitting element configured to emit light having a first peak wavelength; a second light emitting element configured to emit light having a second peak wavelength longer than the first peak wavelength; a first light-transmissive member; and a first wavelength converting member located on the first light-transmissive member.

Abstract: Provided are a method for manufacturing a phosphor ceramic that emits light when excited by excitation light, and a method for manufacturing a light-emitting device. The method for manufacturing a phosphor ceramic includes preparing a precursor that is either a molded body containing aluminum nitride or a sintered body containing aluminum nitride, and producing an aluminum nitride phosphor ceramic having a content of europium in a range from greater than 0.03 mass % to 1.5 mass % by bringing the precursor into contact with a gas containing europium.

Abstract: Provided is an oxide fluorescent material having a light emission peak in a wavelength range from red light to near-infrared light. The oxide fluorescent material has a composition including: a first element M1 being at least one element selected from the group consisting of Li, Na, K, Rb, and Cs; a second element M2 being at least one element selected from the group consisting of Ca, Sr, Mg, Ba, and Zn; Ge; O (oxygen); and Cr, the composition optionally including: a third element M3 being at least one element selected from the group consisting of Si, Ti, Zr, Sn, Hf, and Pb; and a fourth element M4 being at least one element selected from the group consisting of Eu, Ce, Tb, Pr, Nd, Sm, Yb, Ho, Er, Tm, Ni, and Mn. When the molar ratio of Ge, or the total molar ratio of the third element M3 and Ge in the case of comprising the third element M3, in 1 mol of the composition of the oxide fluorescent material is 6, the molar ratio of the first element M1 is 1.5 or more and 2.

Abstract: A light emitting device includes: a base having a bottom face and a lateral part surrounding the bottom face and extending upwards from the bottom face, wherein the lateral part has an uppermost face and includes a first stepped portion including a first upper face and a second stepped portion including a second upper face, wherein the first upper face and the second upper face are disposed below the uppermost face, wherein the first upper face and the second upper face are disposed inward of the uppermost face in a top view, and wherein a height of the first stepped portion from the bottom face is lower than a height of the second stepped portion from the bottom face; a semiconductor laser element disposed on the bottom face; and a light reflective member and/or an optical member disposed on the bottom face.

Abstract: A light emitting device includes: a laser element; a case enclosing the laser element, the case including a light-transmissive region configured to allow light emitted from the laser element to transmit through the light-transmissive region; a first lens configured to collimate or converge light emitted from the laser element; and a second lens that is disposed in the case and spaced apart from the first lens, the second lens located in an optical path between the laser element and the first lens. The second lens is spaced apart from the light-transmissive region such that an open space is located in the case between the light-transmissive region and the second lens.

Abstract: A method of manufacturing a semiconductor element includes a first irradiation step in which a laser beam is irradiated to form, in the interior of the substrate, a plurality of first modified portions aligned along a first direction; a second irradiation step in which a laser beam is irradiated to form a plurality of second modified portions aligned along the first direction at a position adjacent to the plurality of first modified portions in the second direction; and a third irradiation step which a laser beam is irradiated to form a plurality of third modified portions aligned along the first direction at a position closer to the first surface than the first modified portions and overlapping the plurality of first modified portions in a thickness direction of the substrate.

Abstract: A rare earth aluminate sintered compact including rare earth aluminate phosphor crystalline phases and voids, wherein an absolute maximum length of 90% or more by number of rare earth aluminate phosphor crystalline phases is in a range from 0.4 ?m to 1.3 ?m, and an absolute maximum length of 90% or more by number of voids is in a range from 0.1 ?m to 1.2 ?m.

Abstract: A light emitting device includes: a lightguide plate including a first surface on which a plurality of first recesses are provided; a light-reflective resin layer located on a bottom portion of each first recess; a plurality of light emitting elements each having an upper surface and a lateral surface, wherein each one of the plurality of light emitting elements is arranged in a corresponding one of the plurality of first recesses; and a plurality of wavelength conversion members, wherein: the upper surface of each light emitting element is attached to the light-reflective resin layer; and each of the plurality of wavelength conversion members covers the lateral surface of the light emitting element in the first recess.

Abstract: A light-emitting unit includes: a wiring board; light-emitting elements on the wiring board; a light reflecting member on the wiring board, the light reflecting member covering a lateral surface of each of the light-emitting elements; wavelength conversion layers each provided on or above an emission surface of a corresponding one of the plurality of light-emitting elements; light reflecting layers on the wavelength conversion layers, respectively; and a protecting layer configured to transmit light and provided on the light reflecting member. The light-transmitting protecting layer covers at least a lateral surface of the wavelength conversion layers and at least a lateral surfaces of the light reflecting layers. An upper surface of the protecting layer has a first recess in a region where the plurality of light reflecting layers are not present in a top view. The first recess includes at least one concave surface.

Abstract: A cylindrical multipole magnet having an inner peripheral surface and an outer peripheral surface and having N- and S-poles alternately and continuously in a circumferential direction. A surface magnetic flux density of the outer peripheral surface is at least 0.2 times a surface magnetic flux density of the inner peripheral surface. The cylindrical multipole magnet contains an anisotropic rare earth magnetic powder and a resin, with a filling ratio of the anisotropic rare earth magnetic powder being at least 50 vol % but not higher than 65 vol % with respect to a total volume of the anisotropic rare earth magnetic powder and the resin.

Abstract: A light emitting device includes: a base member including a mounting surface, a first light-emitting element that is disposed on the mounting surface and emits light passing along a first optical axis, a second light-emitting element that is disposed on the mounting surface and emits light passing along a second optical axis, a third light-emitting element that is disposed on the mounting surface and emits light passing along a third optical axis, and one or more light reflective members including a first light reflective surface that includes a first position to be irradiated with the light passing along the first optical axis, a second light reflective surface that includes a second position to be irradiated with the light passing along the second optical axis and, and a third light reflective surface that includes a third position to be irradiated with the light passing along the third optical axis.

Abstract: A semiconductor laser element includes a substrate, and a semiconductor layer portion disposed on the substrate and including a waveguide including an active layer. The waveguide includes a wide portion including a first diffraction grating, and a narrow portion that has a narrower waveguide width than the wide portion and through which light generated in the active layer propagates in a transverse multimode. The waveguide includes a first end surface including an end surface of the narrow portion, and a second end surface located on a side opposite to the first end surface. The wide portion is continuously connected to the narrow portion, and includes a first region having a waveguide width increasing from the first end surface side toward the second end surface side.

Abstract: A light-emitting device includes: a substrate having a mounting surface; a semiconductor laser element supported by the mounting surface; a first mirror member supported by the mounting surface and having a first reflective surface oriented obliquely upward; a cover that has a facing surface facing the mounting surface of the substrate, has an upper surface positioned on a side opposite to the facing surface, and is positioned above the semiconductor laser element and the first mirror member; and a second mirror member supported by the upper surface of the cover and having a second reflective surface. The first reflective surface reflects a laser beam to change a traveling direction of the laser beam to a direction away from the mounting surface of the substrate. The cover transmits the laser beam reflected by the first reflective surface. The second reflective surface reflects the laser beam reflected by the first reflective surface.

Abstract: A light emitting module includes a substrate; at least one light emitting device each including: at least one light emitting element each including: a semiconductor layered structure having a lower surface, an upper surface, and lateral surfaces, and electrodes on the lower surface of the semiconductor layered structure; a light-reflecting part having a lower surface and covering at least the lateral surfaces and the lower surface of the semiconductor layered structure, at least one recessed portion being formed in the lower surface of the light-reflecting part; and a light-transmitting part located over the light-reflecting part and covering an upper surface side of the semiconductor layered structure; an electrically conductive bonding member configured to bond the substrate and the electrodes of each of the at least one light emitting device; and a covering resin spaced apart from the light-transmitting part and disposed at least in the at least one recessed portion and around at least one of the at least

Abstract: A light source device includes: a plurality of independently operable light emitting devices; a first lens having a lower face that faces the light emitting devices, and an upper face opposite the lower face. The lower face of the first lens includes: an entrance part located in a center of the lower face where light from the light emitting devices enters, and a light guide part located outward of the entrance part and configured to guide the light entering the entrance part. The upper face of the first lens comprises a plurality of annular protruding portions.

Abstract: Provided is an electrode active material for a fluoride ion battery. The electrode active material for a fluoride ion battery includes a complex oxide that comprises a melilite-type crystal structure. The complex oxide includes: a first metal atom that comprises at least one type selected from a first metal atom group; a second metal atom that comprises at least one type selected from a second metal atom group; a specific non-metal atom that comprises at least one type selected from a specific non-metal atom group; and at least an oxygen atom as the specific non-metal atom. The first metal atom group includes Li, Be, Na, Mg, K, Ca, Rb, Sr, Y, Cs, Ba, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and Bi. The second metal atom group includes Al, Si, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Sn, Hf, Ta, W, Re, Os, Ir, Pt, and Au. The specific non-metal atom group includes O, F, N, S, and Cl.