Abstract: A method for manufacturing an image display device includes: preparing a substrate, the substrate including a circuit and a first insulating film covering the circuit; forming a graphene-including layer on the first insulating film; forming a semiconductor layer on the graphene-including layer; forming a light-emitting element by etching the semiconductor layer, the light-emitting element including a bottom surface on the graphene-including layer, and a light-emitting surface at a side opposite to the bottom surface; forming a second insulating film covering the graphene-including layer, the light-emitting element, and the first insulating film; forming a first via extending through the first and second insulating films; and forming a wiring layer on the second insulating film. The first via is located between the wiring layer and the circuit and electrically connects the wiring layer and the circuit. The light-emitting element is electrically connected to the circuit via the wiring layer.

Abstract: A method that includes providing a substrate having first and second regions for forming first and second light emitting devices, respectively, that are axisymmetrical in plan view with respect to a boundary line extending between the regions. The method includes mounting first and second light emitting elements in the first and second regions, respectively, arranging first and second light transmissive members respectively thereon, and arranging a covering member to collectively cover at least a portion of the first and second light emitting devices. The first and second devices have external connection terminals that are exposed. The terminals of the first light emitting device are on a side of the first light emitting device opposite to a side thereof adjacent the boundary line, and the terminals of the second light emitting device are on a side thereof opposite to a side of the second light emitting device adjacent the boundary line.

Abstract: A method for producing a phosphate-coated SmFeN-based anisotropic magnetic powder, the method includes: a phosphate treatment of adding an inorganic acid to a slurry containing an SmFeN-based anisotropic magnetic powder, water, and a phosphate compound to adjust a pH of the slurry to a range from 1 to 4.5 to form an SmFeN-based anisotropic magnetic powder having a surface on which a phosphate coating is formed; and oxidizing by heat treating the SmFeN-based anisotropic magnetic powder having the surface on which the phosphate coating is formed, in an oxygen-containing atmosphere at a temperature in a range of 200° C. to 330° C., to form the phosphate-coated SmFeN-based anisotropic magnetic powder.

Abstract: A semiconductor nanoparticle includes a core and a shell covering a surface of the core. The shell has a larger bandgap energy than the core and is in heterojunction with the core. The semiconductor nanoparticle emits light when irradiated with light. The core is made of a semiconductor that contains M1, M2, and Z. M1 is at least one element selected from the group consisting of Ag, Cu, and Au. M2 is at least one element selected from the group consisting of Al, Ga, In and Tl. Z is at least one element selected from the group consisting of S, Se, and Te. The shell is made of a semiconductor that consists essentially of a Group 13 element and a Group 16 element.

Abstract: A light emitting element includes: a semiconductor structure including: a substrate, an n-side nitride semiconductor layer located on the substrate, and a p-side nitride semiconductor layer located on the n-side nitride semiconductor layer, wherein a p-side nitride semiconductor side of the semiconductor structure is a light extraction face side, and an n-side nitride semiconductor side of the semiconductor structure is a mounting face side; a first protective layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the peripheral portion of the p-side nitride semiconductor layer; and a current diffusion layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the area inside of the peripheral portion. The current diffusion layer does not overlap the first protective layer in a top view.

Abstract: A light emitting device includes: a light emitting element; a wavelength conversion member including: a wavelength conversion portion arranged on or above an upper surface of the light emitting element, and a light-transmissive portion, wherein, in a plan view, the light-transmissive portion surrounds at least one or more lateral surfaces of the wavelength conversion portion; a sealing member comprising a lens portion that is arranged on or above an upper surface of the wavelength conversion member; and a light reflection member that surrounds one or more lateral surfaces of the wavelength conversion member. In a plan view, the wavelength conversion member is inside a perimeter of the lens portion.

Abstract: A method for producing a ceramic complex includes: preparing a raw material mixture that contains 5% by mass or more and 40% by mass or less of first rare earth aluminate fluorescent material particles containing an activating element and a first rare earth element different from the activating element, 0.1% by mass or more and 32% by mass or less of oxide particles containing a second rare earth element, and the balance of aluminum oxide particles, relative to 100% by mass of the total amount of the first rare earth aluminate fluorescent material particles, the oxide particles, and the aluminum oxide particles; preparing a molded body of the raw material mixture; and obtaining a sintered body by calcining the molded body in a temperature range of 1,550° C. or higher and 1,800° C. or lower.

Abstract: A light emitting device includes a package, a cap fixed to the package, and at least one laser element. The cap includes a light-transmissive member having a lower surface facing the package and an upper surface opposite to the lower surface, and a light blocking film arranged on the lower surface of the light-transmissive member and having a shape which has at least one opening. The at least one laser element is disposed in a space bounded by the cap and the package at a position such that the at least one opening is irradiated by laser light emitted from the at least one laser element, at least a part of each of the at least one laser element being disposed in the at least one opening in the light blocking film in a top view.

Abstract: A method for manufacturing a nitride semiconductor light-emitting element includes: forming an n-side layer; forming an active layer on the n-side layer; and forming a p-side layer on the active layer. The step of forming the active layer includes: forming a first layered section comprising a first well layer having a first thickness, and a first barrier layer, at a first temperature, forming a second layered section on the first layered section, the second layered section comprising a second well layer having a thickness greater than the first thickness, and a second barrier layer, at a second temperature lower than the first temperature, and forming a third layered section on the second layered section, the third layered section comprising a third well layer having a third thickness less than the second thickness, and a third barrier layer, at a third temperature higher than the second temperature.

Abstract: A method for manufacturing an image display device includes: preparing a substrate comprising a circuit and a first insulating film covering the circuit; forming a conductive layer on the first insulating film, the conductive layer comprising a single-crystal metal; forming a semiconductor layer on the conductive layer, the semiconductor layer comprising a light-emitting layer; forming a light-emitting element including a bottom surface on the conductive layer, and a light-emitting surface at a side opposite to the bottom surface; forming a second insulating film covering the conductive layer, light-emitting element, and first insulating film; forming a first via extending through the first and second insulating films; and forming a wiring layer on the second insulating film. The first via is located between the wiring layer and the circuit and electrically connects the wiring layer and the circuit. The light-emitting element is electrically connected to the circuit via the wiring layer.

Abstract: A wavelength conversion member includes a substrate and a wavelength conversion layer containing a binder and a phosphor and disposed on the substrate. The wavelength conversion layer has a volume ratio of the phosphor to the binder in a range of 0.75 to 1.45 and an average thickness in a range of 55 ?m to 146 ?m. A method for manufacturing a wavelength conversion member includes applying a phosphor composition onto a substrate, the phosphor composition including a binder, a solvent, and a phosphor, a boiling point of the solvent being in a range of 200° C. to 300° C., a mass ratio of the solvent to the binder being in a range of 0.01 to 0.4, and a mass ratio of the phosphor to the binder being in a range of 3.15 to 6.05, and heat-treating the phosphor composition applied onto the substrate to form a wavelength conversion layer.

Abstract: A light-emitting device includes: a light-emitting unit having a light-emitting surface; a light guide member configured to guide light from the light-emitting unit, the light guide member having a first surface that includes an incident portion on which light from the light-emitting unit is incident, and a second surface from which the light exits, the second surface including a plurality of concentric protrusions; and a movement mechanism configured to move the light guide member such that the incident portion and the plurality of concentric protrusions move together relative to the light-emitting unit in a first direction that intersects a center axis of the light-emitting surface.

Abstract: A method for manufacturing a light-emitting device includes: providing a substrate on which a semiconductor portion is disposed; providing a support substrate having conductivity, including a first surface and a second surface on a side opposite to the first surface, and including a groove portion formed at the first surface; electrically connecting the semiconductor portion and the support substrate by disposing the semiconductor portion on the first surface across the groove portion in a plan view; removing the substrate from the semiconductor portion; bonding a wavelength conversion member to the semiconductor portion from which the substrate has been removed; supplying a resin member having light reflectivity into the groove portion and a space between the support substrate and the wavelength conversion member; and exposing the resin member in the groove portion from the support substrate by removing part of the support substrate from the second surface side.

Abstract: A semiconductor laser element includes: a first nitride semiconductor layer of a first conductivity-type; a second nitride semiconductor layer of a second conductivity-type; and an active region disposed between the first nitride semiconductor layer and the second nitride semiconductor layer, the active region having a single quantum well structure. The active region comprises a first barrier layer, an intermediate layer, a well layer, and a second barrier layer, in this order in a direction from the first nitride semiconductor layer toward the second nitride semiconductor layer. The thickness of the first barrier layer is 20 nm or less. A lattice constant of the intermediate layer is greater than a lattice constant of each of the first barrier layer and the second barrier layer, and smaller than a lattice constant of the well layer. A thickness of the intermediate layer is greater than a thickness of the well layer.

Abstract: A light emitting device includes: at least one semiconductor laser element; a base member on which the at least one semiconductor laser element is disposed; a light-transmissive member including: an upper surface, a lower surface, and a light-transmissive region through which laser light emitted from the at least one semiconductor laser element is transmitted from the lower surface to the upper surface; and a lens member through which the laser light emitted from the at least one semiconductor laser element, the lens member being fixed to the base member or the light-transmissive member. At least the light-transmissive region is made of sapphire. The light-transmissive member includes an incident surface on which the laser light is incident, the incident surface being an a-plane of the sapphire.

Abstract: A light source device includes: light emitting parts arranged in a matrix, each having an upper surface that includes a light emitting surface, each of the light emitting parts being configured to emit light from the light emitting surfaces and at least one of the light emitting parts being configured to be individually turned on, wherein each of the light emitting parts includes a light emitting element, a wavelength conversion member covering the upper surface of the light emitting element, and a light-reflective member covering lateral surfaces of the light emitting element and lateral surfaces of the wavelength conversion member, and wherein the light-reflective members of the light-emitting parts are directly adjacent to each other; and an optical lens located above the light emitting surfaces of the light emitting parts. Sizes of the light emitting surfaces of at least some of the light emitting parts are different from each other.

Abstract: A light-emitting device includes a board on which light sources are disposed; a sectioning member including a ridge part having segments that configures a grid pattern, and a wall part surrounding the light sources, and extending from the ridge part toward the board such that an interval between two adjacent portions of the wall part joining along the ridge part becomes wider toward the board; and one or more integrated circuits configured to drive the light sources. The sectioning member and the integrated circuits are disposed on the same side of the board as the light sources. A space is defined between the back surface of the sectioning member and the board. One of the one or more integrated circuits is square or rectangular, and overlaps an intersection of segments of the ridge part, such that the sides are oblique with respect to the ridge part.

Abstract: A light source device includes: a light emitting device having an upper face including a light emission face; and a first lens having a lower face that faces the light emitting device, and an upper face opposite the lower face. The lower face of the first lens includes: an entrance part located in a center of the lower face where light from the light emitting device enters, and a light guide part located outward of the entrance part and configured to guide the light entering the entrance part. The upper face of the first lens includes a plurality of annular protruding portions.

Abstract: A light emitting device includes a light emitting element and a lens, The lens includes a cover part and a light-shielding part. The cover part includes a lens part, a connection part, and a flange part which are formed of a thermosetting first resin and continuous to one another. The light-shielding part covers an outer lateral side of the connection part and is formed of a second resin having a greater light-absorptance or a greater light-reflectance than the first resin. The lens part is disposed at a location that allows light from the light emitting element to be transmitted through the lens part.

Abstract: A light-emitting module includes a light source unit, and a light guide member surrounding the light source unit in a plan view and including a first hole portion opening on a side of a first surface of the light guide member and a second hole portion and a third hole portion, the second hole portion and the third hole portion are aligned in a first direction, a depth of the first hole portion from the first surface is shallower than a depth of the second hole portion from the first surface and a depth of the third hole portion from the first surface, and in the plan view, a maximum length of the second hole portion in the first direction is longer than a maximum length of the second hole portion in a second direction orthogonal to the first direction.