Abstract: A light emitting module includes: a light guide member including: an emission region defined by a sectioning groove, a light source placement part located in the emission region, and a light adjusting hole that, in a schematic top view, is located between the sectioning groove and the light source placement part; and a light source disposed in the light source placement part. A refractive index of an inside of the light adjusting hole is lower than a refractive index of the light guide member. In the schematic top view, the light adjusting hole is positioned to intersect with a first straight line connecting a center of the light source and a farthest point in the sectioning groove, the farthest point being farthest from the center of the light source.

Abstract: A nitride semiconductor element includes: a first light emission part that includes a first n-side semiconductor layer, a first active layer, and a first p-side semiconductor layer; a first layer that contains an n-type impurity of a first concentration, located on the first light emission part, and in contact with the first p-side semiconductor layer; a second layer that contains an n-type impurity of a second concentration, located on the first layer; and a second light emission part that includes a second n-side semiconductor layer located on the second layer, a second active layer, and a second p-side semiconductor layer. The second n-side semiconductor layer contains an n-type impurity of a third concentration. The first and second concentrations are higher than the third concentration. The first concentration is higher than the second concentration. A thickness of the second layer is larger than a thickness of the first layer.

Abstract: A light emitting device includes: a first semiconductor laser element; a base portion including: a bottom portion including a first upper surface on which the first semiconductor laser element is disposed, and a frame portion surrounding the first semiconductor laser element, the frame portion including a second upper surface positioned above the first upper surface and a support portion positioned between the first upper surface and the second upper surface, the a support portion having a support area; a light reflecting member having a flat plate-shaped and contacting the support area, the light reflecting member being configured to reflect light from the first semiconductor laser element; and a lid portion bonded to the second upper surface.

Abstract: The light emitting device includes: at least one light emitting element including a light-extracting surface and at least one lateral surface; a wavelength converting member including; a first upper surface and a second upper surface, a lower surface located at an opposite side from the first upper surface and the second upper surface, at least one first lateral surface connecting the second upper surface and the first upper surface, and at least one second lateral surface connecting the second upper surface and the lower surface, in which a thickness between the lower surface and the first upper surface is smaller than a thickness between the lower surface and the second upper surface, and the first upper surface is located at an opposite side from the light-extracting surface of a corresponding one of the at least one light emitting element, and the lower surface is located facing the light-extracting surface of the corresponding one of the at least one light emitting element; a covering member covering the

Abstract: A light emitting device includes first and second semiconductor laser elements, a base, a surrounding part, a wavelength converting member, and first and second wiring parts. The first laser element, the converting member and the second laser element are arranged in order in a first direction. At least one of the first and second laser elements is disposed between the first and second wiring parts in a second direction perpendicular to the first direction. An outermost periphery of the converting member is between a first imaginary line and a second imaginary line in the top view. The first and second imaginary lines are both parallel to the second direction. The first imaginary line passes through an outermost periphery in the first direction of the second laser element and the second imaginary line passes through an outermost periphery in a direction opposite to the first direction of the first laser element.

Abstract: A light emitting device includes: a substrate; a light emitting element disposed on the substrate; a first wavelength conversion member disposed on the light emitting element and having a lower surface bonded to the light emitting element, an upper surface opposite the lower surface, and a lateral surface that meets the upper surface; a first light reflecting member disposed on an upper surface of the substrate and covering lateral surfaces of the light emitting element; and a second wavelength conversion member disposed on the first light reflecting member, on the upper surface of the substrate, and on the lateral surface of the first wavelength conversion member without covering the upper surface of the first wavelength conversion member.

Abstract: A light emitting device includes a base, a first semiconductor laser element, a second semiconductor laser element, a lens member, and a waveplate. The base has a bottom part. The first semiconductor laser element is disposed on the bottom part of the base. The second semiconductor laser element is disposed on the bottom part of the base. The second semiconductor laser element has a different polarization direction from a polarization direction of the first semiconductor laser element. The lens member is a member into which light beams from the first semiconductor element and the second semiconductor laser element enter. The waveplate is configured to change the polarization direction of light from the first semiconductor laser element.

Abstract: A display device includes a substrate including a first surface, and a second surface positioned at a side opposite to the first surface; a first light-emitting element located at a lateral side of the substrate; a plurality of light-receiving elements located at a second surface side of the substrate; a plurality of second light-emitting elements located on the first surface of the substrate; and a first drive element controlling driving of the second light-emitting elements based on output of the light-receiving elements. A light-emitting surface of the first light-emitting element is oriented in a first direction. The first direction is parallel to a direction from the first surface toward the second surface. Light-emitting surfaces of the second light-emitting elements are oriented in a second direction. The second direction is from the second surface toward the first surface.

Abstract: A planar light source includes: a support member including a wiring substrate, a light guide member, a light source disposed in a hole of the light guide member, and a first reinforcing member disposed on the support member and surrounding the light guide member in a plan view. The first reinforcing member includes first and second portions extending in a first direction and facing each other, and includes third and fourth portions extending in a second direction orthogonal to the first direction and facing each other. At least one of the first portion, the second portion, the third portion, and the fourth portion has light reflectivity to light emitted from the light source. In the plan view, the light guide member is located between the first and second portions in the second direction, and is located between the third and fourth portions in the first direction.

Abstract: A light emitting device includes: a base having a bottom face and a lateral part surrounding the bottom face and extending upwards from the bottom face, wherein the lateral part comprises a first stepped portion and a second stepped portion facing the first stepped portion; a first semiconductor laser element disposed on the bottom face and located between the first stepped portion and the second stepped portion in a top view, wherein the first semiconductor laser element is configured to emit light towards the second stepped portion; a first wiring region located on the first stepped portion; and one or more first wires, each having a first end that is connected to the first wiring region. At least one of the one or more first wires is electrically connected to the first semiconductor laser element.

Abstract: Provided is a positive-electrode active material for a nonaqueous electrolyte secondary battery, including a lithium transition metal composite oxide particle having a layered structure and containing nickel, and an oxide containing lithium and aluminum and an oxide containing lithium and boron adhering to a surface of the lithium transition metal composite oxide particle. The lithium transition metal composite oxide particle includes a secondary particle formed by aggregation of primary particles containing a solid solution of aluminum in a surface layer. The lithium transition metal composite oxide particles have a composition with a difference of more than 0.22 mol % and less than 0.

Abstract: An image display method includes, with respect to each of a plurality of input images, generating luminance setting data that sets a luminance value for each of a plurality of light-emitting regions of a backlight configured in a matrix form based on the input image, generating gradation setting data that sets a gradation value for each of a plurality of pixels of a liquid crystal panel coupled to the backlight, based on the generated luminance setting data and the input image, and controlling the backlight based on the luminance setting data and the liquid crystal panel based on the gradation setting data to display an image. At least one of the luminance setting data and the gradation setting data for a first input image among the plurality of input images is generated based on the luminance setting data for a second input image immediately preceding the first input image.

Abstract: A light-emitting device includes a plurality of light-emitting elements, a photodetector, an optical member and a bonding portion. The light-emitting elements include a first light-emitting element configured to emit first light and a second light-emitting element configured to emit second light. The photodetector is configured to receive a part of light emitted from each of the light-emitting elements. The photodetector has a first bonding surface. The optical member has a second bonding surface and a first inner side surface. The first inner side surface is continuous from the second bonding surface. The light emitted from each of the plurality of light-emitting elements is configured to pass through the optical member. The bonding portion bonds the photodetector and the optical member with the bonding portion being in contact with the first bonding surface, the second bonding surface, and at least a part of the first inner side surface.

Abstract: A method for manufacturing a light-emitting device includes: providing a plurality of first light-emitting elements, each comprising a joining portion containing gold; providing a support member including: a substrate, and a plurality of wiring portions, each disposed on the substrate and containing gold; joining the joining portions of the first light-emitting elements and corresponding wiring portions of the plurality of wiring portions under a first joining condition; evaluating whether at least one first light-emitting element of the plurality of first light-emitting elements is removable from the support member; evaluating electrical characteristics of each of the plurality of first light-emitting elements; and if the at least one first light-emitting element is removed from the support member, removing from the support member a first light-emitting element determined to be defective in the step of evaluating electrical characteristics of each of the plurality of first light-emitting elements.

Abstract: A coated rare earth-iron-nitrogen-based magnetic powder including: a core region; a first coating portion provided outside the core region; and a second coating portion, the core region containing R, Fe, and N, where R represents at least one selected from the group consisting of Y, Ce, Pr, Nd, Gd, Tb, Dy, Ho, Er, Tm, Lu, and Sm, and if Sm is present, Sm constitutes less than 50 atm % of the total R content, the powder including, in an order from the core region, the first coating portion containing P and R, an average atomic concentration of R in the first coating portion being higher than and not higher than twice an average atomic concentration of R in the core region, and the second coating portion having average atomic concentrations of P and R lower than those in the first coating portion, respectively, and containing Fe.

Abstract: The halophosphate phosphor includes a halophosphate including an alkaline earth metal including at least calcium; europium; and a halogen including at least chlorine. An elution amount of chlorine ions after the halophosphate phosphor is brought into contact with 10 times by mass of pure water at 85° C. for five hours is 7 ppm or less.

Abstract: A method of producing a semiconductor device, the method includes steps of: detecting a defect included in a semiconductor layer; forming a metal film on the semiconductor layer; after forming the metal film on the semiconductor layer, exposing the semiconductor layer through the metal film by removing a portion of the metal film by irradiation with a first laser emitting red or infrared light; and after the step of exposing the semiconductor layer, removing a portion of the semiconductor layer by irradiation with a second laser emitting ultraviolet light, said portion of the semiconductor layer including the defect. A diameter of said portion of the metal film is greater than a diameter of said portion of the semiconductor layer in a plan view. Said portion of the metal film overlaps with said portion of the semiconductor layer in the plan view.

Abstract: A method of manufacturing a light emitting module includes: providing an intermediate structure that includes a wiring board having an upper surface and including a metal layer, a first conducting member on the metal layer, and a second conducting member on the metal layer; disposing, on the intermediate structure, a resist layer having openings; providing a light emitting element including a first electrode and a second electrode, and disposing the light emitting element on the resist layer such that the first electrode and the second electrode respectively face the first conducting member and the second conducting member while a portion of an outer periphery of the lower surface of the light emitting element is exposed from the resist layer in the openings; forming a first bonding member on the first conducting member and forming a second bonding member on the second conducting member; and removing the resist layer.

Abstract: A method for manufacturing a phosphor ceramic, the method including preparing a precursor including aluminum nitride, and forming the phosphor ceramic by bringing the precursor into contact with a gas containing manganese.

Abstract: A light-emitting device includes a base member having a recess inside which a light-emitting element is disposed; and a light-reflective member continuously disposed on an upper surface of the bottom portion and at least a portion of an inner lateral surface of a wall portion inside the recess of the base member, in a cross-sectional view, the inner lateral surface of the wall portion having a first surface, a second surface located above the first surface, and a third surface connecting the first surface and the second surface, a shortest distance between the second surface and the light-emitting element being larger than a shortest distance between the first surface and the light-emitting element, the third surface being located below an upper surface of the light-emitting element, and an upper end of the light-reflective member being located below an upper surface of the wall portion.