Abstract: A light-emitting device includes: a substrate including a base and a side wall; a plurality of semiconductor laser elements arrayed in a first direction on an upper surface of the base; a sealing member fixed to the substrate, wherein the sealing member and the substrate define a sealed space in which the semiconductor laser element is located; and a lens array disposed above the sealing member, the lens array including a plurality of lens sections arrayed in the first direction. In the lens array, a maximum outer diameter of each lens sections is 1.25 times or more than an inter-vertex distance between adjacent ones of the lens sections in the first direction.

Abstract: A light emitting device including a first light emitting element that includes a first electrode having a first polarity and a second electrode having a second polarity that is different from the first polarity. The device has a circuit element that includes a main body, and first and second terminals electrically connected with one another via the main body. The device includes a first wiring having the first polarity connecting the first electrode of the first light emitting element and the first terminal, and a second wiring having the second polarity located in a layer common with a layer of the first wiring and including a portion elongated between the first terminal and the second terminal in a bottom view. An upper surface of the main body is positioned at a distance below an interface between a lower surface of the first wiring and the first electrode.

Abstract: A nitride phosphor having a composition containing Eu, Si, Al, N, and a group 2 element including at least one selected from the group consisting of Mg, Ca, Sr, and Ba. In the composition, a ratio of a total molar content of the group 2 element and Eu to a molar content of Al is 0.8 or more and 1.1 or less, a molar ratio of Eu is 0.002 or more and 0.08 or less, a molar ratio of Si is 0.8 or more and 1.2 or less, and a total molar ratio of Si and Al is 1.8 or more and 2.2 or less. The nitride phosphor has a first peak in a range of 17° 2? or more and 19° 2? or less and a second peak in a range of 34° 2? or more and 35.5° 2? or less in a CuK? powder X-ray diffraction pattern.

Abstract: A light-emitting module includes a light guide member including a first surface, a second surface on an opposite side of the first surface, and a first through hole penetrating from the first surface to the second surface, a light source unit disposed in the first through hole, a first light-transmissive member disposed in the first through hole of the light guide member and covering the light source unit, and a reflective member disposed above the light source unit and disposed above the first light-transmissive member. In a plan view, an outer edge of the reflective member is located outside an outer edge of the light source unit, and the reflective member includes a resin member and a reflector having a refractive index lower than a refractive index of the resin member.

Abstract: In an image display method, a backlight is divided into first areas in a first direction. Each of the first areas includes light-emitting regions. A liquid crystal panel is divided into second areas in the first direction. In the method, a first operation to cause light to be emitted from the light-emitting regions at respective intensity in accordance with frame image data is performed sequentially with respect to each of the first areas. Further, a second operation to apply voltages to the pixels at respective levels in accordance with the frame image data is performed sequentially with respect to each of the second areas. A timing at which the first operation with respect to each of the first areas is started is delayed from a timing at which the second operation with respect to a corresponding one of the second areas is started by a predetermined interval.

Abstract: A method of manufacturing a covering member includes: providing a first light-reflective member comprising a through-hole, the through-hole having first and second openings; arranging a light-transmissive resin containing a wavelength-conversion material within the through-hole; distributing the wavelength-conversion material predominantly on a side of the first opening of the through-hole within the light-transmissive resin; and after the step of distributing the wavelength-conversion material, removing a portion of the light-transmissive resin from a side of the second opening of the through-hole.

Abstract: A light emitting module including: a light guide member including: an emission region defined by a sectioning groove, a light source placement part located in the emission region, and a light adjusting hole; and a light source disposed in the light source placement part. In the schematic top view: the light adjusting hole is not positioned on a first straight line connecting (i) a center of the light source and (ii) a point in the sectioning groove that is farthest from the center of the light source, and a first lateral face of the light adjusting hole has a first region, and a line normal to the first region is oblique to a second straight line connecting (i) the center of the light source and (ii) a point in the sectioning groove that is closest to the center of the light source.

Abstract: A light-emitting device includes a base member, a plurality of light sources on or above an upper surface of the base member, and a reflector that comprises a plurality of surrounding portions. Each of the plurality of surrounding portions surrounds a respective one of the plurality of light sources in a plan view. Each of the plurality of surrounding portions has inclined lateral surfaces widened upward. Intervals between adjacent ones of the plurality of light sources are constant in the plan view. Upper peripheries of the inclined lateral surfaces of each of the plurality of surrounding portions define an opening having a substantially rectangular shape. The plurality of surrounding portions include a plurality of first surrounding portions and a plurality of second surrounding portions surrounding the plurality of first surrounding portions.

Abstract: A light-emitting module includes: a support base having a plurality of placement surfaces arranged in a first direction; a plurality of semiconductor laser elements disposed on respective ones of the plurality of placement surfaces, each semiconductor laser element configured to emit laser beams; a plurality of first mirror members, each having a first reflective surface configured to reflect and change a traveling direction of the laser beams from a respective one of the semiconductor laser elements; and a plurality of second mirror members, each having a second reflective surface, at least a portion of the second reflective surface being positioned above at least a portion of a respective one of the first reflective surfaces, and the second reflective surface being configured to reflect, in a second direction intersecting the first direction, the laser beams reflected by the respective first reflective surface.

Abstract: A wiring substrate includes: a base body having an insulating property and including a first surface and a second surface on a side opposite the first surface; a resist portion covering at least part of the first surface and at least a part of the second surface of the base body and including a hole portion having a predetermined pattern; and a wiring line disposed in the hole portion of the resist portion so as to be in contact with the base body. In a cross-sectional view in a thickness direction of the base body, a length of an exposed surface of the wiring line exposed from the resist portion is less than a length of a contact surface of the wiring line in contact with the base body.

Abstract: A manufacturing method of a light-emitting device includes: providing a light source comprising: a plurality of light-emitting units, a support substrate comprising, on a first upper surface: a plurality of first terminal portions electrically connected with respective ones of the light-emitting units, each comprising a plurality of terminals, and one or more first wire-connecting portions, and a light-reflective member covering the plurality of light-emitting units and comprising a recess in which one or more first wire-connecting portions are exposed from the light-reflective member; providing a control unit comprising, on a second upper surface: a first region where the light source is to be disposed, and one or more second wire-connecting portions disposed in a second region other than the first region; disposing the light source in the first region; and connecting the first and second wire-connecting portions with a first wire.

Abstract: A light-emitting device comprising a package comprising a light-emitting element comprising a first surface and a second surface opposite to the first surface, a first light-transmissive member arranged on the second surface of the light-emitting element, paired electrodes at the first surface of the light-emitting element, and a first covering member covering the light-emitting element such that the paired electrodes are exposed from the first covering member. The light-emitting device further comprises a light-guiding plate on which the package is placed, and a second covering member arranged on the light-guiding plate and covering laterally the package. The light-emitting device further comprises paired wirings continuously covering the paired electrodes exposed and the first covering members and being connected to the paired electrodes respectively.

Abstract: The method of manufacturing a light emitting module includes: providing a light guiding plate having a first main surface serving as a light emitting surface; and a second main surface positioned opposite to the first main surface and provided with a recess; providing a light adjustment portion containing a fluorescent material; providing a light emitting element unit in which a light emitting element comprising an electrode is integrally bonded to the light adjustment portion; bonding the light adjustment portion of the light emitting element unit to the recess; and forming wiring on the electrode of the light emitting element.

Abstract: A light emitting element includes an n-side nitride semiconductor layer; an active layer disposed on the n-side nitride semiconductor layer and including a plurality of nitride semiconductor well layers and a plurality of nitride semiconductor barrier layers, the active layer being configured to emit ultraviolet light; and a p-side nitride semiconductor layer disposed on the active layer. At least one of the plurality of barrier layers including, successively from the n-side nitride semiconductor layer side, a first barrier layer containing Al and Ga, and a second barrier layer disposed in contact with the first barrier layer, containing Al, Ga, and In, and having a smaller band gap energy than the first barrier layer. At least one of the plurality of well layers is disposed in contact with a second barrier layer and has a smaller band gap energy than the second barrier layer.

Abstract: A method for manufacturing an image display device according to an embodiment includes: preparing a first substrate, the first substrate including a circuit element, a first wiring layer connected to the circuit element, and a first insulating film covering the circuit element and the first wiring layer; forming a conductive layer including a single-crystal metal on the first insulating film; forming a semiconductor layer including a light-emitting layer on the single-crystal metal; forming a light-emitting element including a light-emitting surface by patterning the semiconductor layer; forming a second insulating film covering the first insulating film, the conductive layer, and the light-emitting element; forming a first via extending through the first and second insulating films; forming a second wiring layer on the second insulating film; and removing at least a portion of the conductive layer on the light-emitting surface.

Abstract: A light emitting device includes multiple light source parts each including at least one first light source part and at least one second light source part, each including a light emitting element and a light-guiding member to guide light of the light emitting element. Each light-guiding member has a taper shape narrowing toward the light emitting element. Light from each light source part satisfies condition of ????tan?1×2 tan ?. (? is an angle of a straight line connecting a position on the light-irradiation surface having an illuminance of at least one-half of that at center position and the center of the light emitting surface of the first light source part, and ? is an angle of a straight line connecting a center of a light-irradiation region on a light-irradiation surface and a center of the light emitting surface of the second light source part.

Abstract: A semiconductor laser element includes: an n-side semiconductor layer formed of a nitride semiconductor; an active layer disposed on or above the n-side semiconductor layer and formed of a nitride semiconductor; a p-side semiconductor layer disposed on the active layer, formed of a nitride semiconductor, and including: an undoped first part disposed in contact with an upper face of the active layer and comprising at least one semiconductor layer, an electron barrier layer disposed in contact with an upper face of the first part, containing a p-type impurity, and having a band gap energy that is larger than a band gap energy of the first part, and a second part disposed in contact with the upper face of the electron barrier layer and comprising at least one p-type semiconductor layer containing a p-type impurity; and a p-electrode disposed in contact with the upper face of the second part.

Abstract: A light-emitting device includes a light-emitting element, the wavelength conversion member, and a light adjustment member. The light-emitting element includes a support substrate, and a first light-emitting portion and a second light-emitting portion disposed adjacent to each other. The wavelength conversion member is configured to perform wavelength conversion of first light emitted from the first light-emitting portion and second light emitted from the second light-emitting portion into third light. The light adjustment member overlaps one of the first light-emitting portion and the second light-emitting portion in a plan view. In the light-emitting element, an emission intensity of the first light at a light emission peak wavelength of the second light is lower than an emission intensity of the second light at the light emission peak wavelength of the second light, during light emission of the light-emitting device.

Abstract: A method for manufacturing a light-emitting device includes providing a light-emitting element having element electrodes including a positive element electrode and a negative element electrode, a wiring substrate having wiring layers, and conductive members each electrically connecting one of the element electrodes and a corresponding one of the wiring layers, with at least one member of the element electrodes, the wiring layers, or the conductive members containing Au; arranging, between a lower surface of the light-emitting element and the wiring substrate, a resin composition in a liquid state; oxidizing a component B in the resin composition in contact with the at least one member containing Au; and after the oxidizing of the component B, heating and curing the resin composition not in contact with the at least one member containing Au.

Abstract: A method of manufacturing a positive electrode material for a lithium ion secondary battery includes: firing a mixture containing a lithium compound, a nickel-containing complex compound, and a molybdenum compound, to obtain first particles containing a lithium transition metal complex oxide having a composition in which a ratio of a number of moles of nickel to a total number of moles of metals other than lithium is greater than 0.6 and less than 1; and bringing the first particles into contact with a liquid medium in such that a solid content concentration of the first particles is in a range of 20 mass % to 80 mass % to remove a part of molybdenum element contained in the first particles to obtain second particles.