Abstract: A light emitting device comprises; a metal reflecting member, a light emitting element fixed to the metal reflecting member, a glass film that covers the metal reflecting member and has Si—N bonds, and a translucent resin that covers the glass film. The present invention provides a light emitting device with which, even when this device is used in a harsh environment, there will be no deterioration in the light reflecting performance of the metal reflecting member, and light can be emitted at high output over an extended period.

Abstract: A semiconductor light emitting device, which includes: a first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer; a semiconductor light emitting portion having a light emitting layer which is disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer; a first conductivity-type semiconductor side electrode connected to the first conductivity-type semiconductor layer; and a second conductivity-type semiconductor side electrode connected to the second conductivity-type semiconductor layer, wherein the second conductivity-type semiconductor side electrode is disposed separated from an insulator film covering the semiconductor light emitting portion by a separation area.

Abstract: In a semiconductor light-emitting device, light from a laser diode is output to the outside after the luminance of the light being enhanced. It includes a support body provided with lead terminals, one or more laser diodes mounted on the support body, a cylindrical reflector fixed to the support body to surround the laser diode(s) and provided with a light reflection surface formed on an inner surface thereof, and a cap placed to cover an opening distal end face of the reflector and held at an opening distal end part of the reflector, the cap being provided at a central part thereof with a solid fluorescent member including a fluorescent substance that is excited by the light from the laser diode and emits light different in colors from light emitted by the laser diode.

Abstract: A semiconductor laser device comprises a laminate consisting of a semiconductor layer of first conductivity type, an active layer and a semiconductor layer of second conductivity type, which is different from the first conductivity type, that are stacked in order, with a waveguide region being formed to guide a light beam in a direction perpendicular to the direction of width by restricting the light from spreading in the direction of width in the active layer and in the proximity thereof, wherein the waveguide region has a first waveguide region and a second waveguide region, the first waveguide region is a region where light is confined within the limited active layer by means of a difference in the refractive index between the active layer and the regions on both sides of the active layer by limiting the width of the active layer, and the second waveguide region is a region where the light is confined therein by providing effective difference in refractive index in the active layer.

Abstract: A phosphor having an excitation band relative to lights in the wide range of wavelengths from ultraviolet to visible light, and having an emission spectrum in the red range and so on, with a wide half value width, and an LED and a light source using the phosphor and emitting white and other color lights with good color rendering properties are provided. Powdered raw materials of Ca3N2 (2N), CaO (2N), AlN (3N), Si3N4 (3N), and Eu2O3 (3N) are prepared, and the respective raw materials are mixed to have a mole ratio of the respective elements of Ca:Al:Si:Eu=0.985:1:1:0.015. The mixed raw materials are fired at 1000° C. or higher in an inert atmosphere for three hours, and thereafter pulverized to obtain a phosphor having a composition of CaAlSiN2.83O0.25:Eu, which is one example of the phosphor satisfying the above described object.

Abstract: A light emitting element having a recess-protrusion structure on a substrate is provided. A semiconductor light emitting element 100 has a light emitting structure of a semiconductor 20 on a first main surface of a substrate 10. The first main surface of the substrate 10 has substrate protrusion portion 11, the bottom surface 14 of each protrusion is wider than the top surface 13 thereof in a cross-section, or the top surface 13 is included in the bottom surface 14 in a top view of the substrate. The bottom surface 14 has an approximately polygonal shape, and the top surface 13 has an approximately circular or polygonal shape with more sides than that of the bottom surface 14.

Abstract: At least one recess and/or protruding portion is created on the surface portion of a substrate for scattering or diffracting light generated in a light emitting region. The recess and/or protruding portion has a shape that prevents crystal defects from occurring in semiconductor layers.

Abstract: A nitride semiconductor laser element comprises; a nitride semiconductor layer that includes a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer, and that has a cavity with end faces, and a first protective film that is in contact with at least one end face of the cavity, wherein the first protective film has a film structure in which bright and dark parts comprising a region in contact with the active layer and a region in contact with the first and second nitride semiconductor layers are observed under scanning transmission electron microscopy, or the first protective film has a film structure in which the crystallinity at a portion adjacent to the active layer is different from that at portions adjacent to the first and second nitride semiconductor layers.

Abstract: A semiconductor apparatus according to the present invention comprises a support member that has a recessed portion, one pair of positive and negative conductive wiring members that are provided on the support member, a semiconductor device that is electrically connected to the conductive wiring members and is disposed in the recessed portion, and a coating member that seals at least the semiconductor device. Side walls of the recessed portion has a first side wall 105 that surrounds the semiconductor device 103, and the second side wall 106 that protrudes from the first side wall. At least a first wall surface 106a in the bottom side of the recessed portion in wall surfaces of the second side wall 106 is coated with a metallic material. Consequently, a highly reliable semiconductor apparatus with improved light-outgoing efficiency is provided.

Abstract: A molded package comprises at least a first metal member, a second metal member, and a third metal member. Each member includes an end portion inserted into a mold member where a recess is formed and another end portion protruding from an outer wall of the mold member. A portion of each main surface of the metal members is exposed from the mold member in the bottom of the recess. A portion of each main surface can be also divided into at least two bonding regions by a wall portion comprising part of the mold member. A semiconductor device of the present invention comprises the molded package, a semiconductor component, and an encapsulating member covering the semiconductor component, and has a high reliability.

Abstract: A nitride semiconductor device having excellent ESD tolerance, by preventing uneven distribution of the electric current in the p-side nitride semiconductor layer. The p-side nitride semiconductor layer (40) comprises, from the active layer (30) side, (a) a p-side wide band gap layer (12) containing a p-type impurity and (b) a three-layer structure (15) comprising a first p-side nitride semiconductor layer (16), a second p-side nitride semiconductor layer (17), and a third p-side nitride semiconductor layer (18).

Abstract: A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers 3 to 5, an active layer 6 and p-type nitride semiconductor layers 7 to 8 are laminated to form a stack of nitride semiconductor on the first face of the substrate 1. A first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layer 8. A supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substrate 1 for growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layer 9 and the second bonding layer 11 are faced with each other and, then, pressed with heat to bond together.

Abstract: A light emitting apparatus includes a plurality of light emitting devices. A first lead and a second lead compose a lead pair. The first and second leads are electrically connected to the light emitting devices. A plurality of the light emitting devices is mounted on the base. The lead pairs are arranged generally symmetrically with respect to the base as the center line of the light emitting apparatus. The first and second leads are electrically insulated from each other. A first resin molding member covers at least parts of the base and the lead pairs. Thus, the first resin molding member, the base, and the lead pairs are integrally formed. A recessed portion is formed in the first resin molding member. The recessed portion is filled with a second resin molding member. The first and second resin molding members are formed of a thermosetting resin material.

Abstract: Disclosed is a positive electrode active material for a lithium ion secondary battery, including lithium-transition metal composite oxide of a layer crystal structure, in which the lithium-transition metal composite oxide contains an element that improves conductivity of electrons in the lithium-transition metal composite oxide. Use of this positive electrode active material can improve cycle characteristics, high rate characteristics and thermal stability of lithium ion secondary batteries. Furthermore, by use of this positive electrode active material, gas generation in batteries can be decreased.

Abstract: A FET includes a nitride semiconductor in which leak current is reduced and breakdown voltage is improved. The FET is formed from a substrate, a buffer layer made of a nitride semiconductor, a first semiconductor layer made of a nitride semiconductor, and a second semiconductor layer made of a nitride semiconductor, wherein at least the buffer layer and the first semiconductor layer include a p-type dopant. The concentration of the p-type dopant is higher in the buffer layer than that in the first semiconductor layer, and the concentration of the p-type dopant is higher in the first semiconductor layer than that in the second semiconductor layer.

Abstract: A light emitting apparatus comprises a light emitting element which has one of main surfaces thereof being used as a light emitting surface and a plurality of side faces having different areas, and a support member which has a recess with metallic members provided on the side wall surfaces thereof for reflecting the light emitted by the light emitting element. The light emitting element is placed in the recess so that the distance between the metallic member and a side face having the largest surface area among the plurality of side faces of the light emitting element is larger than the distance between the metallic member and the other side face.

Abstract: A light emitting apparatus that is capable of emitting light with uniform intensity and high luminance are provided. The first optical guide comprises a first principal surface that has an effective light emitting region of substantially rectangular shape surrounded by first through fourth sides and a second principal surface that opposes the first principal surface, wherein the circumferential side face of the optical guide includes first through fourth side faces disposed along the first through fourth sides, respectively, and a light introducing section, disposed at the corner interposed between the first and second side faces, with an angle of inclination from the first side face that is determined so that center axis of light distribution intersects one of the first through fourth sides and divides the area of the effective light emitting region into two equal parts.