Abstract: A light emitting device and display apparatus using a plurality of light emitting devices can drastically reduce contrast loss due to light from an external source. The light emitting device has a light emitting chip(s) and a first layer covering the light emitting chip(s). A second layer including a light scattering material is provided at least over the first layer, and the surface of the second layer has a plurality of protrusions which follow the topology of the light scattering material. The display apparatus is formed by disposing these light emitting devices in an array on a substrate.

Abstract: A planar light source comprises at least one point light source disposed on a supporting substrate, and a cylindrical lens that covers the light emitting observation side of the point light source, wherein the cylindrical lens has a concave lens function in the direction (y direction) perpendicular to the supporting substrate, and has a convex lens function in at least part of the horizontal direction (x direction).

Abstract: A light emitting device, comprises at least: a light emitting element; a wavelength conversion member for converting the wavelength of light from the light emitting element; a bendable light guide member for guiding light from the light emitting element to the wavelength conversion member; and a heat conduction member that is thermally connected to the wavelength conversion member.

Abstract: The present invention provides a process for forming a bulk monocrystalline gallium-containing nitride, i.e. GaN etc., on the surface of heterogeneous substrate, i.e. SiC etc., comprising the steps of forming a supercritical ammonia solvent containing ion or ions of alkali metals in an autoclave, dissolving a gallium-containing feedstock in the supercritical ammonia solvent to form a supercritical solution in which the feedstock is dissolved, and crystallizing gallium-containing nitride on the face of a seed which contains no element of oxygen and has a lattice constant of 2.8 to 3.6 with respect to ao-axis from the supercritical solution, under a condition of a higher temperature and/or a lower pressure than the temperature and/or the pressure where the gallium-containing feedstock is dissolved in the supercritical solvent. Therefore nitride gallium system compound semiconductor device can be formed on a conductive substrate.

Abstract: A light emitting device comprises: a light emitting element; a plurality of lead frames to which the light emitting element is electrically connected; and a package that includes in its interior at least part of said lead frames which protrude outward at one end, that is equipped with an opening for taking off light from the light emitting element, and that extends in the lengthwise direction, wherein a concave portion is formed in the outer surface of at least part of the package wall, the lead frames protruding outward from the package are accommodated in this concave portion, and the walls that constitute said opening and are across from each other in the widthwise direction of the package comprise at least a first wall that is across from the light emitting element, a second wall that is raised up by a step from the first wall, and a third wall that links the first wall and the second wall, and the second wall and third wall are formed thicker than the first wall.

Abstract: The invention relates to a substrate for epitaxy, especially for preparation of nitride semiconductor layers. Invention covers a bulk nitride mono-crystal characterized in that it is a mono-crystal of gallium nitride and its cross-section in a plane perpendicular to c-axis of hexagonal lattice of gallium nitride has a surface area greater than 100 mm2, it is more than 1,0 ?m thick and its C-plane surface dislocation density is less than 106/cm2, while its volume is sufficient to produce at least one further-processable non-polar A-plane or M-plane plate having a surface area at least 100 mm2. More generally, the present invention covers a bulk nitride mono-crystal which is characterized in that it is a mono-crystal of gallium-containing nitride and its cross-section in a plane perpendicular to c-axis of hexagonal lattice of gallium-containing nitride has a surface area greater than 100 mm2, it is more 1,0-?m thick and its surface dislocation density is less than 106/cm2.

Abstract: A nitride semiconductor laser element, comprises a substrate, a nitride semiconductor layer laminated on said substrate and having a ridge on its surface, a first protective film that covers said nitride semiconductor layer, and an electrode form on the ridge and the first protective film, wherein the first protective film covers part of the nitride semiconductor layer surface in a contact state, and covers from the periphery around the base of the ridge to the side faces of the ridge in a non-contact state, resulting in a cavity being disposed from said ridge side faces to the ridge base periphery.

Abstract: The present invention provides the lighting apparatus cable that allows it to easily attach the lighting module and enables it to improve the productivity. A flat cable used in a lighting apparatus having a plurality of lighting modules disposed in series, for connecting the lighting modules in such a manner that colors and/or luminous intensities of emitted lights of the lighting modules can be controlled, the flat cable comprising: at least four conductors disposed in parallel which include two signal conductors disposed at both sides of the cable and two power feeding conductors; a sheath member covering the at least four conductors to integrate; and notches formed on both sides of the cable so as to cut the signal conductors.

Abstract: A light emitting device includes a first unit having a first excitation light source including a laser element emitting blue wavelength band excitation light, and a first wavelength converting member including at least one type of fluorescent material and which absorbs at least a portion of a first excitation light, converts the wavelength, and releases light with a wavelength longer than the first excitation light, and a second unit having a second excitation light source including a laser element which emits excitation light with a wavelength band shorter than the blue wavelength band excitation light, and a second wavelength converting member which includes at least one type of fluorescent material and which absorbs at least a portion of a second excitation light, converts the wavelength, and releases light with a wavelength longer than the second excitation light. The first unit and the second unit are combined using a bundle fiber.

Abstract: A nitride semiconductor laser element has a first nitride semiconductor layer, an active layer, a second nitride semiconductor layer, and a first protective film in contact with a cavity end face of the nitride semiconductor layer, wherein the first protective film in contact with at least the active layer of the cavity end face has a region thinner than the maximum thickness of the first protective film.

Abstract: A semiconductor device comprises an active layer having a quantum well structure, the active layer including a well layer and a barrier layer and being sandwiched by a first conductivity type layer and a second conductivity type layer, wherein a first barrier layer is provided on side of the first conductivity type layer in the active layer and a second barrier layer is provided on the side of the second conductivity type layer in the active layer, at least one well layer is sandwiched thereby, and the second barrier layer has a band gap energy lower than that of the first barrier layer in the form of asymmetric barrier layer structure, where the second conductivity type layer preferably includes a carrier confinement layer having a band gap energy higher than that of the first barrier layer, resulting in a reverse structure in each of conductivity type layer in respect to the asymmetric structure of the active layer to provide a waveguide structure having excellent crystallinity and device characteristics in

Abstract: The present invention provides a nitride semiconductor laser element, comprising: a nitride semiconductor structure having a first nitride semiconductor layer, a second nitride semiconductor layer, and an active layer provided between the first and second nitride semiconductor layers; a cavity end face provided to the nitride semiconductor structure; and a protective film having a hexagonal crystal structure, and having a first region provided on a first crystal surface of the nitride semiconductor structure in the cavity end face and a second region provided on a second crystal surface in the surface of at least one of the first and second nitride semiconductor layer, the first and second regions of the protective film are oriented in the same axial direction as that of the respective first and second crystal surfaces.

Abstract: The present invention provides a heat insulating material comprising a heat insulating formed body and a sheet-shaped porous material bonded to at least a part of the surface of the heat insulating formed body with a binder, wherein the binder comprises: inorganic particles having an average particle size of 0.05 to 50 ?m; and at least one of a hydrolysate of a metal alkoxide compound and a sol of a metal oxide. Also, a method for producing the heat insulating material is disclosed.

Abstract: A nitride semiconductor laser device includes, on a first principle face of the (0001) of a nitride semiconductor substrate, a nitride semiconductor layer having a first conductivity type, an active layer, and a nitride semiconductor layer having a second conductivity type that is different from the first conductivity type, and being formed a stripe ridge on the surface thereof. The (000-1) face and an inclined face other than the (000-1) face are exposed on a second principal face of the nitride semiconductor substrate. The inclined face other than the (000-1) face represents no less than 0.5% over the surface area of the second principal face.

Abstract: According to the nitride semiconductor device with the active layer made of the multiple quantum well structure of the present invention, the performance of the multiple quantum well structure can be brought out to intensify the luminous output thereof thereby contributing an expanded application of the nitride semiconductor device.

Abstract: The semiconductor device includes a semiconductor element, a lead frame electrically connected to the semiconductor element, and a package having an opening in a front surface with a part of the lead frame protruding from a bottom surface. The protruding lead frame branches into a plurality of end portions, and the end portions are bent to be positioned respectively on a side surface and one of a back surface and a bottom surface of the package.

Abstract: The template type substrate is used for opto-electric or electrical devices and comprises A) a layer of bulk mono-crystal nitride containing at least one element of alkali metals (Group I, IUPAC 1989) and B) a layer of nitride grown by means of vapor phase epitaxy growth wherein the layer A) and the layer B) are combined at non N-polar face of the layer A) and N-polar face of the layer B). Therefore, the template type substrate has a good dislocation density and a good value of FWHM of the X-ray rocking curve from (0002) plane less than 80, so that the resulting template type substrate is very useful for the epitaxy substrate from gaseous phase such as MOCVD, MBE and HVPE, resulting in possibility of making good opto-electric devices such as Laser Diode and large-output LED and good electric devices such as MOSFET.

Abstract: The present invention provides a light emitting element capable or realizing at least one of, preferably, most of lower resistance, higher output, higher power efficiency (1 m/W), higher mass productivity and lower cost of the element using a light transmissive electrode for an electrode arranged exterior to the light emitting structure.

Abstract: A nitride semiconductor laser device comprises, on a principle face of a nitride semiconductor substrate: a nitride semiconductor layer having a first conductivity type; an active layer comprising indium, and a nitride semiconductor layer having a second conductivity type that is different from said first conductivity type, and on the surface of which is formed a stripe ridge; said principal face of said nitride semiconductor substrate having an off angle a (?a) with respect to a reference crystal plane, in at least a direction substantially parallel to said stripe ridge.