Abstract: Disclosed is a positive electrode active material for a nonaqueous electrolyte secondary battery having at least a lithium-transition metal composite oxide of the spinel structure,

Abstract: A phosphor material of the chemical composition formula (Sr1−x−y, Mgx, Cay)TiO3:Pr,Al, where the value of x+y is in the range 0.001 to 0.05. Another phosphor material has the chemical composition formula SrTiO3:Pr,Al, in which the surfaces of phosphor particles are diffused with a diffusing agent containing at least one of Be, Mg, Ca, Sr, and Ba. Still another phosphor material has the chemical composition formula SrTiO3:Pr,Al, where Sr/Ti molar ratio is 0.88 to 0.99.

Abstract: A cooling apparatus of an internal combustion engine includes an insert that is deformable, and a surface of the insert opposing a cylinder bore wall is close to the cylinder bore wall after the insert is inserted into a water jacket. A cooling apparatus of an internal combustion engine includes a cylinder block having a water jacket in which an insert is disposed; the cylinder block is machined so that a water hole or an aperture having a size corresponding to a size of the insert is formed in the cylinder block and the insert can be inserted into the water jacket through the water hole or the aperture.

Abstract: A cooling apparatus of an internal combustion engine includes a closed deck-type cylinder block and an insert. The cylinder block includes a water jacket and an upper deck including a water hole formed therein. The insert is disposed in the water jacket and inserted into the water jacket through the water hole. The insert is fixed relative to the cylinder block at a water hole portion such that the insert is fixed in position in a flow direction of the cooling water. A stopper for preventing the insert from moving downstream in a flow direction of the cooling water may be formed, and the insert engages the stopper such that the insert is fixed in position in the flow direction of the cooling water.

Abstract: A phosphor for use with low speed electron beams is characterized by the following general composition formula. (Y, Ce)2O3.nSiO2 0.4≦n<1.

Abstract: A light emitting device and display apparatus using a plurality of light emitting devices can drastically reduce contrast loss due to light from an external source. The light emitting device has (a) light emitting chip(s) and a first layer covering the light emitting chip(s). A second layer including a light scattering material Is provided at least over the first layer, and the surface of second layer has a plurality of protrusions which follow the topology of the light scattering material. The display apparatus is formed by disposing these light emitting devices In an array on a substrate.

Abstract: The present invention refers to an ammonobasic method for preparing a gallium-containing nitride crystal, in which gallium-containing feedstock is crystallized on at least one crystallization seed in the presence of an alkali metal-containing component in a supercritical nitrogen-containing solvent. The method can provide monocrystalline gallium-containing nitride crystals having a very high quality.

Abstract: An nitride semiconductor device for the improvement of lower operational voltage or increased emitting output, comprises an active layer comprising quantum well layer or layers and barrier layer or layers between n-type nitride. semiconductor layers and p-type nitride semiconductor layers, wherein said quantum layer in said active layer comprises InxGa1−xN (0<x<1) having a peak wavelength of 450 to 540 nm and said active layer comprises laminating layers of 9 to 13, in which at most 3 layers from the side of said n-type nitride semiconductor layers are doped with an n-type impurity selected from the group consisting of Si, Ge and Sn in a range of 5×1016 to 2×1018/cm3.

Abstract: An surface light emitting device that is capable of emitting light of high luminance with higher uniformity is disclosed.

Abstract: In the nitride semiconductor device of the present invention, an active layer 12 is sandwiched between a p-type nitride semiconductor layer 11 and an n-type nitride semiconductor layer 13. The active layer 12 has, at least, a barrier layer 2a having an n-type impurity; a well layer 1a made of a nitride semiconductor that includes In; and a barrier layer 2c that has a p-type impurity, or that has been grown without being doped. An appropriate injection of carriers into the active layer 12 becomes possible by arranging the barrier layer 2c nearest to the p-type layer side.

Abstract: A structure of an exhaust manifold branch collecting portion includes a double collecting pipe 21 for collecting a plurality of exhaust openings 11A, 17A. The double collecting pipe 21 is comprised of an inner pipe 21-1 and an outer pipe 21-2, which are connected integrally to each other. In a space formed between the inner pipe 21-1, the outer pipe 21-2, and a ring-shaped stainless steel cushion member 22-2, a tubular cushion member 22-1, which is thermally expanded and foamed, is arranged as a restricted cushion structure.

Abstract: A nitride semiconductor substrate including (a) a supporting substrate, (b) a first nitride semiconductor layer having a periodical T-shaped cross-section, having grown from periodically arranged stripe-like, grid-like or island-like portions on the supporting substrate, and (c) a second nitride semiconductor substrate covering said supporting substrate, having grown from the top and side surfaces of said first nitride semiconductor layer, wherein a cavity is formed under the second nitride semiconductor layer. A protective layer having a periodically arranged stripe-like, grid-like or island-like apertures is formed on the supporting substrate. The first nitride semiconductor layer is laterally grown from the exposed portion of the substrate. The growth is stopped before the first nitride semiconductor layer covers the supporting substrate. Thus, the first nitride semiconductor layer has a periodical T-shaped cross-section.

Abstract: A nitride semiconductor substrate including (a) a supporting substrate, (b) a first nitride semiconductor layer having a periodical T-shaped cross-section, having grown from periodically arranged stripe-like, grid-like or island-like portions on the supporting substrate, and (c) a second nitride semiconductor substrate covering said supporting substrate, having grown from the top and side surfaces of said first nitride semiconductor layer, wherein a cavity is formed under the second nitride semiconductor layer. A protective layer having a periodically arranged stripe-like, grid-like or island-like apertures is formed on the supporting substrate. The first nitride semiconductor layer is laterally grown from the exposed portion of the substrate. The growth is stopped before the first nitride semiconductor layer covers the supporting substrate. Thus, the first nitride semiconductor layer has a periodical T-shaped cross-section.

Abstract: To provide a light emitting device having a high reliability wherein no resin burrs occur, The semiconductor device comprises a semiconductor element, a package having a recess for housing the semiconductor element and a mold member for sealing the semiconductor element in the recess and the package comprises lead electrodes and a package support part supporting the lead electrodes so that main surfaces of the tip portions of the lead electrodes are exposed from the bottom surface of the recess.

Abstract: A red light emitting afterglow photoluminescence phosphor is a rare earth oxysulfide phosphor activated by Europium, which chemical formula is as follows: Ln2O2S:Eux,My 0.00001≦x≦0.5 0.00001≦y≦0.3 wherein Ln is at least one selected from the group consisting of Y, La, Gd and Lu; M is a coactivator which is at least one selected from the group consisting of Mg, Ti, Nb, Ta and Ga in the chemical formula.

Abstract: A nitride semiconductor substrate including (a) a supporting substrate, (b) a first nitride semiconductor layer having a periodical T-shaped cross-section, having grown from periodically arranged stripe-like, grid-like or island-like portions on the supporting substrate, and (c) a second nitride semiconductor substrate covering said supporting substrate, having grown from the top and side surfaces of said first nitride semiconductor layer, wherein a cavity is formed under the second nitride semiconductor layer.