Abstract: A sputter ion pump in which the ratio of the length L to the diameter D of each anode cell forming a multi-cell anode inserted between two cathodes is defined within a certain range, thereby increasing a critical vacuum level to be evacuated and achieving a higher exhaust speed.

Abstract: The present invention provides a processing apparatus for eliminating pores in via holes of a silicon semiconductor. The apparatus includes a high-pressure vessel divided into at least two vessel component members in the axial direction thereof, at least one of which has a cooling unit, a frame for holding a load acting in the axial direction of the high-pressure vessel in processing a workpiece to be processed in the high-pressure vessel, an actuator for moving the vessel component members of the high-pressure vessel in the axial direction thereof so as to load and unload the workpiece, a sealing unit fitted to a portion for loading and unloading the workpiece, which is formed when the vessel component members are moved in the axial direction of the vessel, and a retractable cotter unit for transmitting a load acting in the axial direction of the high-pressure vessel to the frame.

Abstract: A method and an apparatus for a CVD comprising feeding a first gas flow, including a reactive gas, in a laminar flowing state and in a sheet state parallel to the surface of a substrate and feeding a second gas flow, including a non-reactive gas, in a direction perpendicular to that of said first gas flow, externally controlling the flow rates of the first and second gases so as to retain the laminar flowing state of said first gas flow and concentrate said first gas flow in the vicinity of said substrate and externally controlling the flow rate of said second gas flow to provide control and uniformity in the thickness of the layer to be formed.

Abstract: An SiO.sub.2 passivation film is formed on a surface of a substrate made of a plastic material by plasma chemical vapor deposition (CVD) process in which organic oxysilane is used as a raw gas. Instead of a reactive gas having an ashing effect, Ar, He or NH.sub.3 is used as a reactive gas which serves as an auxiliary for decomposing the raw gas at a temperature not greater than a temperature at which the substrate is thermally deformed (i.e., about 250.degree. C.). The ashing of the substrate by oxygen or hydrogen radicals is thus prevented.

Abstract: A parallel scan type ion implanter comprising multipole electrostatic deflectors and designed to produce an even and uniform dose distribution on the entire area of the substrate by maintaining the moving speed of the ion beam spot constant on the substrate is characterized in that it holds the rate of raising or lowering the deflection voltage stepwise along the vertical direction (Y-direction) constant and the manner of varying the rate of changing the deflection voltage along the horizontal direction (X-direction) with time as the function of the location of the moving beam spot on the substrate determined by the dimensional parameters of the multipole electrostatic deflectors assuming that the rate is normalized by the rate of changing the deflecting voltage when the beam spot passes the center of the substrate.

Abstract: An apparatus for generating magnetically neutral line discharge type plasma comprises a magnetic field generating coil for forming magnetically neutral lines defined by continuously connecting points of zero-intensity magnetic field that is arranged within the vacuum chamber so that a couple of lines of magnetic force crossing vertically at the magnetically neutral lines in the perpendicular plane where the center axis is located can be connected by surrounding the magnetic field generating coil without intersecting or touching the lateral wall of the vacuum chamber to reduce any possible loss of plasma and any possible damage to the lateral wall.

Abstract: The present invention provides a system for supplying a high-pressure medium gas suitable for processing a semiconductor to be processed by heating under isostatic pressure in a short cycle.The system includes a gas holder containing a high-pressure medium gas, a compressor for pressurizing the high-pressure medium gas supplied from the gas holder, a high-pressure vessel having a heater, an accumulator for storing the high-pressure medium gas pressurized by the compressor, a first evacuation unit for evacuating the inside of a pipeline for the high-pressure medium gas, a vacuum casing for holding the opening of the high-pressure vessel in a vacuum, a second evacuation unit for evacuating the inside of the vacuum casing, and a valve unit for connecting the high-pressure vessel and the accumulator so that series connection and parallel connection can be switched on the outlet side of the compressor.

Abstract: A magnetron sputtering apparatus with an improved magnetic field distribution on the surface of a target, so that a film is formed satisfactorily in each and every recess in a substrate arranged in the apparatus, wherein the magnet is so arranged as to produce a magnetic field distribution on the surface of the target having a horizontal magnetic field intensity equal to 0 only at points located within the outer periphery of the target and to ignite electric discharge at a pressure level as low as 10.sup.-2 Pa. The magnet is also so configured as to produce a magnetic field distribution having a horizontal magnetic field intensity of not lower than 140 Gauss at a position on the surface of the target where the vertical magnetic field intensity is equal to 0 and a vertical magnetic field intensity of not lower than 60 Gauss at a position on the surface of the target where the horizontal magnetic field intensity is equal to 0.

Abstract: A surface cleaning apparatus using magnetic neutral line discharged plasma for the purpose of inner-wall surface cleaning of a vacuum vessel assembled in a semiconductor manufacturing machine, which comprises electromagnetic coils for producing a closed magnetic neutral line that is formed by circularly connecting points of zero-intensity magnetic field, rf electric field generator for continuously generating plasma by applying a rf electric field along the magnetic neutral line and a controller for controlling the size and position of the closed magnetic neutral line and the kind, temperature and density of the plasma being generated.

Abstract: A high vacuum sputtering apparatus comprising a vacuum chamber in which a substrate to be processed and a small size sputtering target having an outer diameter less than one and a half times the diameter of the substrate and an area inclined toward the outer periphery thereof on the surface disposed opposite to the substrate are oppositely disposed, and the internal pressure of the vacuum chamber is maintained at less than 1.times.10.sup.-3 Torr for sputtering, thereby obtaining an improved distribution of film thickness and an enhanced coverage symmetry for sputtering.

Abstract: An ion implantation apparatus is provided with an ion source and a mass spectrometer having an analyzer magnet and is adapted to take out ions having a predetermined kinetic energy and mass from other ions produced in the ion source. It further includes a scanner system for scanning an ion beam of the take-out ions and irradiating the ion beam onto a substrate. The scanner system includes a deflection electro-magnet which is disposed downstream of the mass spectrometer for deflecting the ion beam in a predetermined plane with respect to a reference axis. A second vacuum chamber portion through which the ion beam passes in the magnetic field of the deflection electro-magnet is provided and a first vacuum chamber portion electrically independent of the second vacuum chamber portion is also provided through which the ion beam passes in the magnetic field of the mass analyzer. A third vacuum chamber portion is also provided through which the ion beam passes and in which the substrate is arranged for irradiation.

Abstract: A quadrupole mass spectrometer which gives a uniform mass separation over a large mass number range without being affected by the nob-linear characteristics of the components of a control circuit arrangement and comprises an all-solid-state control circuit by using an O-method according to the invention to compare the positive or negative peak value U+V or U-V of U+Vcos.omega. t or the positive or negative peak value V-U or --U+V of --U-Vcos.omega. t, U+Vcos.omega. t and --U-Vcos.omega. t being voltages given to two pairs of rods of a quadrupole section respectively, to reference voltage (U.sub.o +V.sub.o) or (U.sub.o -V.sub.o) or (--U.sub.o +V.sub.o) or (--U.sub.o -V.sub.o), U.sub.o and V.sub.o being a DC voltage and the peak value of RF voltage to which U and V should be controlled and minimize the difference between the peak value (RF+DC) voltages to the high precision reference voltages as mentioned above.

Abstract: A leak detecting apparatus using a compound turbo-molecular pump has an analyzer tube, an auxiliary vacuum pump such as a rotary pump connected to the analyzer tube by means of a passage with a compound turbo-molecular pump and a fore valve in between. An exhaust passage extends from a test port to be connected to an object of inspection. The exhaust passage is branched into a plurality of branched passages and each of the branched passages is connected to a position of different compression ratio of the compound turbo-molecular pump. A gate valve is disposed in each of the branched passages. There is connected to the exhaust passage a vacuum gauge which is in communication with each of the gate valves via a controller such that the gate valves are sequentially opened and closed by a signal from the controller in accordance with a change in pressure to be detected by the vacuum gauge.

Abstract: A passivation film is formed by plasma CVD process in which organic oxysilane is used as a raw gas. When an SiO.sub.2 film as the passivation film is formed on a surface of a substrate, Ar, He or NH.sub.3 gas is used as a reactive gas which serves as an auxiliary for decomposing the raw gas. Ashing of the substrate by oxygen or hydrogen radicals is thus prevented. Fluorine group gas of CF.sub.4 or NF.sub.3 may be added to the reactive gas. The SiO.sub.2 film as a passivation film as described above may be formed first as an initial passivation film and then another passivation film may be formed on top of the initial passivation film by using a reactive gas having an ashing effect such as O.sub.2, N.sub.2 O, O.sub.3 and H.sub.2.

Abstract: A silicon oxide depositing source is a mixture of a metallic silicon powder and a silicon dioxide powder. Both the powders are finely divided to a mean particle size of up to 20 .mu.m. They are mixed to give an oxygen to silicon atom ratio between 1.2:1 and 1.7:1. The source is adapted to be evaporated by an electron beam heating technique, allows the power of an electron beam to be increased without a splash phenomenon, and eventually deposits a silicon oxide thin film having transparency and improved barrier properties.

Abstract: An in-line type chemical vapor deposition apparatus having an etching device for cleaning at least substrate holders, which is provided downstream of the substrate unloading station in which the processed substrates are removed from the substrate holders at atmosphere pressure. The etching device comprises a plasma etching means in which the substrate holders are positioned on an anode side or a dry-etching means in which the substrate holders are positioned on a cathode side, thereby reducing the down time of the apparatus without any influence of an exfoliation of an adhered film from the substrate holders or other portions.

Abstract: A magnetic recording medium suitable for high-density recording which comprises a non-magnetic substrate disk, at least one magnetic layer and at least one protective layer, the magnetic layer and the protective layer being formed in succession on the non-magnetic substrate disk, wherein the non-magnetic substrate disk comprises a glass substrate and at least one non-magnetic metallic film provided on the glass substrate, and the non-magnetic metallic film is provided on a surface thereof with a multitude of fine concentric grooves.

Abstract: An apparatus for a chemical vapor deposition in which at least one substrate which has partially an insulating film on the surface thereof is disposed in a pressure reduced reaction chamber, the reaction chamber is provided with a nozzle for feeding a reactive gas into the reaction chamber, and a light source is provided for emitting a light beam to heat the substrate. The combination of substrate heating source using infrared rays and a laminarized jet of reactive gas is utilized for maintaining the selectivity, facilitating the thin film forming reaction, and improving the high reproducibility and controllability.

Abstract: A plasma ashing apparatus has a vacuum treatment chamber for receiving therein a substrate coated with a resist film, a reactive gas introduction pipe equipped with a plasma applicator, a vacuum exhaust pipe, a heating means for heating the substrate, and two pieces of electrodes disposed in parallel to each other. One of the electrodes is a substrate electrode and the other thereof is a circular counter electrode. These two electrodes are commonly connected to an RF power source to thereby constitute a cathode electrode. Multiple concentric perforations are formed in the counter electrode except for a rib portion. A central perforation is formed in the center of the counter electrode. The concentric perforations are formed at every distance, from the center, equivalent to a diameter of the central perforation, while leaving circular electrode surfaces corresponding in width to a radius of of the perforation.

Abstract: In a method for plasma ashing a resist film coated on a substrate, the temperature of the substrate is controlled initially at temperatures below that at which explosion of the resist film occurs until a surface portion of a resist film has been removed. Thereafter, the substrate temperature is increased to remove the remaining portions of the resist film. An apparatus for conducting the method includes a plurality of supports, which may be movably disposed within a vacuum treatment chamber for moving the substrate away from a source of heat and for moving the substrate into contact with the heating source.