Abstract: An improved magnetic recording member comprising a magnetic metallic film having the composition Co.sub.x Cr.sub.y Ni.sub.z wherein x, y, and z are atomic ratios and 0.45.ltoreq.x<1.0; 0<y.ltoreq.0.25; and x+y+z=1. The magnetic metallic film is formed over a Cr film provided on a surface of a non-magnetic substrate.

Abstract: A differential pressure sealing apparatus and method for processing a continuously moving elongated sheet through successively different stages of vacuum. A vacuum chamber is provided with an inlet and a guide roller for the incoming sheet with the sheet urged against the guide roller over a wrap contact angle of 15 to 120 degrees. To resist the entrance of air into the chamber, a sealing structure encompasses at least portions of the entrance, the guide roller and the sheet.

Abstract: A method of producing by sputtering an In-O, Sn-O, Zn-O, Cd-Sn-O or Cd-In-O based transparent conductive film according to the present invention uses the addition of a donor element, if needed. The sputtering is carried out by maintaining an intensity of a magnetic field on a surface of a target at 600 Oe or greater as well as by charging the target with a DC electric field superimposed by an RF electric field. An apparatus for producing an In-O, Sn-O, Zn-O, Cd-Sn-O or Cd-In-O base transparent conductive film uses the addition of a donor element, if needed. The apparatus has a vacuum chamber adapted to support therein a substrate and a target in an opposed relationship for forming by sputtering the transparent conductive film on the substrate by plasma discharge generated therebetween.

Abstract: A magnetic recording member with improved coercive force is obtained by:(a) forming by sputtering or Cr film on a non-magnetic substrate;(b) forming by sputtering an epitaxially grown film of a Co alloy containing at least Cr as an additional metal on the Cr film formed in the step (a);and applying a negative bias voltage to the substrate during at least one of steps (a) and (b).The coercive force of the magnetic recording member is further increased when high-frequency sputtering is used instead of direct current sputtering.

Abstract: A vacuum processing apparatus in which a DC bias to be produced on the surfaces of substrates which are to be processed in a vacuum chamber can be mechanically and easily controlled by adjusting the position of a susceptor in respect to an electrode body, and the susceptor and other components in the vacuum chamber can be easily cleaned while maintaining a desired evacuated condition and a desired processing performance in the vacuum chamber.

Abstract: A process and apparatus for producing an In-O or In-Sn-O based transparent conductive film by a sputtering process is provided. The sputtering voltage is kept constant at 350V or less by maintaining the intensity of the magnetic field on the surface of the target at 400 Oe or greater. The apparatus contains a vacuum chamber wherein the substrate and target are mounted in opposite to each other. An electromagnet, used for adjusting the intensity of the magnetic field is located on the rear surface of the target. Additionally provided is a controller for the electric current supplied to the electromagnet. The controller is also connected to a DC power supply for the electromagnet.

Abstract: A magnetic recording member having high coercive force, comprising:(a) a non-magnetic substrate;(b) a Cr base film formed on said substrate by a film forming process; and(c) a Co alloy film formed on said Cr base film by the same film forming process as in (b),wherein said Cr base film contains in addition to Cr at least one additional element selected from the group consisting of rare earth elements, Si, Cu, P and Ge, and wherein said Co alloy film is formed by continuous operation of said film forming process without interruption after completion of the formation of said Cr base film.

Abstract: An ion implanation apparatus comprises a first multipole electrostatic deflector and a second multipole electrostatic deflector. The first multipole electrostatic deflector comprises five or more electrodes equally spaced around an optical axis to each of which voltage for offset-deflecting the ion beam at the predetermined angle and voltage for simultaneously sweeping the ion beam in X and Y directions are applied.

Abstract: A perpendicular type magnetic recording member comprising a perpendicular-incidence magnetic film on a substrate, the perpendicular-incidence magnetic film comprising a magnetic metal and oxygen, the magnetic metal being selected from the group consisting of ferro-magnetic alloys, alloys thereof and combinations thereof; and a method of manufacturing the perpendicular type recording member by utilizing vapor deposition techniques, which may include sputtering and ionization.

Abstract: A thin film forming method for a substrate having one or more recesses using a vacuum deposition wherein the thin film to be formed on the substrate is heated and melted, and the melted material of the thin film is pressurized and forced into each recess so as not to have any void in the thin film.

Abstract: An ion implanter systems in which a deflector system comprises a first multiple pole electrostatic deflector having five or more poles for deflecting ion beams and a second multiple pole electrostatic deflector having poles of the same number as that of said first multiple pole electrostatic deflector and disposed coaxially at the rear of said first multiple pole electrostatic deflector for deflecting and pointing the ion beams deflected by said first multiple pole electrostaic deflector to a definitely predetermined direction, and said first and second deflectors are controlled so as to scan a region defined by an equilateral polygon whose sides are in number equal to or twice the poles of said each electrostatic deflector.

Abstract: A parallel sweeping system for electrostatic sweeping ion implanters comprising an ion source for generating an ion beam, first and second multipole beam deflectors along and around a common optical axis and a target wafer to be raster-scanned by the deflected beam. The two deflectors have the same number of electrodes of five or more and have similar configurations. One electrode of the first deflector is paired with an electrode of the second deflector in the same plane common with the optical axis, but on the opposite side of the optical axis. The same sweeping voltage is applied simultaneously to each electrode of a pair in the same plane and predetermined different voltages to each pair of electrodes. Thus, a substrate is constantly raster-scanned by means of parallel ion beams with predetermined direction, namely raster-scanned with the ion beam all over a large wafer with exact parallelism to the optical axis.

Abstract: An apparatus for a chemical vapor deposition in which at least one substrate which has partially an insulating film on the surface thereof is disposed in a pressure reduced reaction chamber, the reaction chamber is provided with a nozzle for feeding a reactive gas into the reaction chamber, and a light source is provided for emitting a light beam to heat the substrate. The apparatus has provision for feeding a second gas opposite the substrate to put the reactive gas in the vicinity of the substrate surface into laminar flow. The combination of substrate heating source using infrared rays and the laminarized jet of reactive gas is utilized for maintaining the selectivity, facilitating the thin film forming reaction, and obtaining improved high reproducibility and controllability.

Abstract: A vacuum processing method and apparatus in which a DC bias to be produced on the surfaces of substrates which are to be processed in a vacuum chamber can be mechanically and easily controlled by adjusting the position of a susceptor in respect to an electrode body, and the susceptor and other components in the vacuum chamber can be easily cleaned while maintaining a desired evacuated condition and a desired processing performance in the vacuum chamber.

Abstract: A hollow cathode ion source for in a vacuum chamber wherein it comprises a cylindrical cathode through one end of which a gaseous medium of at least a discharge maintaining gas or said discharge maintaining gas and a metal vapor is or are introduced, and an anode provided on the other end of said cylindrical cathode and having at least one ion extraction opening, said gaseous medium being ionized by a discharge means between said cylindrical cathode and said anode to produce ions which are extracted through said ion extraction opening in the axial direction of said cylindrical cathode.The cylindrical cathode in the ion source has a large diameter at least about half and preferably about equal to its axial length and may be directly cooled.

Abstract: A wafer transferring hand is so constructed that at least three seats made of a soft low-friction material are provided in an integral manner, a groove having a width slightly wider than the thickness of the wafer is formed in the laterally arranged seats, the bottom of the groove being arcuated in a manner conforming to the periphery of the wafer, while a similar groove having an adjustable width is provided in the seat arranged at the center, the bottom of the groove being spaced apart outwardly from the periphery of the wafer, and at least two cut-away portions are provided between the seats so as to provide a gap between the periphery of the wafer and the bottom of the cut-away portion.

Abstract: Ion source including an electric discharge chamber body divided by a partition, having an anode electrode therein, into a main discharge chamber and a subsidiary discharge chamber. The subsidiary discharge chamber has a filament mounted therein aligned with at least one small opening through the partition wall and the anode electrode. An inert gas opening is provided into the subsidiary discharge chamber. An electric discharge gas opening and an ion outlet opening are provided to the main discharge chamber. Magnets are provided outside of the chamber body for creating a magnetic field extending nearly along an axis of the at least one small opening in the anode electrode.

Abstract: Method of correcting the azimuth angle of a photometric ellipsometer in which accurate ellipsometric parameters .PSI. and .DELTA. can be simply and readily obtained by measuring by means of a suitable method the errors in the azimuth angle of a polarizer assembly or a polarizer and an analyzer system or an analyzer and subtracting the error value from the actually measured value.

Abstract: A Co-based alloy sputter target comprising a f.c.c. phase and a h.c.p. phase, wherein the value of th ratio of X-ray diffraction peak intensity, I.sub.fcc(200) /I.sub.hcp(101), is smaller than the value of the same ratio in a Co-based alloy obtained by cooling a Co-based alloy having a f.c.c. single phase to room temperature from the high temperature at which it is in a melted state.The target is manufactured by subjecting to cold-working treatment a Co-based alloy obtained by cooling a Co-based alloy material having a f.c.c. single phase from its melting temperature.

Abstract: The present invention relates to a fine particle collector arrangement for vacuum pumps, in which high temperature walls and low temperature walls are alternately provided in the collecting chamber to form gas flow passage which is extended from the inlet conduit connected with the vacuum processing chamber to the outlet conduit connected with the vacuum pump, and the gas flow passage has larger cross section than that of the inlet conduit. Fine particles in gas flowing from the inlet conduit are deposited on the each low temperature wall member to be efficiently collected by the thermal creep velocity caused by the thermophoretic force.