Abstract: A locking connector includes a first connector portion that includes a male thread portion, a second connector portion that is connected to the first connector portion, a lock ring that includes a female thread portion to be screwed onto the male thread portion and a movement restricting portion to restrict movement of the second connector portion toward a base end side, not less than one projecting portion formed on one of the second connector portion or the lock ring, and a slope portion that is formed on the other of the second connector portion or the lock ring and includes not less than one inclined surface formed at an angle with respect to a circumferential direction about an axis of rotation of the screwing so that a diameter gradually increases along a direction of rotation of the screwing.

Abstract: A pressurization system executes a pressurization process and related processes for a workpiece. The pressurization system includes a plurality of execution areas where any one of processes of the plurality of processes is executed and a chamber unit accommodating the workpiece and being conveyed through the executed areas. The execution areas are disposed according to an order in which the processes are executed. The chamber unit includes a ceiling portion disposed above the workpiece and that functions as an upper pressurizing unit pressurizing the workpiece from above in the pressurization process, a floor portion disposed below the workpiece and that functions as a lower pressurizing unit pressurizing the workpiece from below in the pressurization process, and a peripheral wall portion disposed to surround the entire perimeter of the workpiece and that defines, together with the ceiling portion and the floor portion, an accommodating chamber where the workpiece is accommodated.

Abstract: A method of manufacturing a semiconductor light-emitting element includes: forming an active layer of an AlGaN-based semiconductor material on an n-type semiconductor layer of an n-type AlGaN-based semiconductor material; forming a p-type semiconductor layer on the active layer; removing a portion of the p-type semiconductor layer and the active layer by dry etching to expose an upper surface of the n-type semiconductor layer; treating the upper surface of the n-type semiconductor layer with a plasma in an atmosphere including an N2 gas and an NH3 gas; and forming a n-side contact electrode on the upper surface of the n-type semiconductor layer treated with the plasma.

Abstract: A susceptor includes a pocket in which a wafer is placed. A side surface of the pocket comprises a side-surface circumference portion formed in a circumference shape and a side-surface enlarged portion formed to extend toward an outer circumferential side of the pocket beyond the side-surface circumference portion. In a plan view seen from an open side of the pocket, when a straight line passing through a rotational center of the susceptor and a circumferential center of the side-surface circumference portion is defined as a first straight line and a straight line orthogonal to the first straight line and passing through the circumferential center is defined as a second straight line, the side-surface enlarged portion overlaps the second straight line.

Abstract: Manufacturing a nitride semiconductor light-emitting device includes a depositing an n-type cladding layer and an active layer with a multi-quantum well structure having a plurality of well layers on a substrate in a chamber. In depositing the active layer, a silicon source is not supplied into the chamber. The method includes supplying the silicon source into the chamber after depositing the n-type cladding layer and before depositing the active layer thereby, when a well layer located second from the n-type cladding layer side among the plurality of well layers is defined as a second well layer, a peak of distribution of a silicon concentration in a stacking direction of the n-type cladding layer and the active layer appears in a range where the second well layer is formed, and the silicon concentration at an apex of the peak is not less than 1.49×1018 atoms/cm3 and not more than 4.96×1018 atoms/cm3.

Abstract: A semiconductor light-emitting element has an n-type semiconductor layer arranged on a base layer, and is made of an n-type AlGaN-based semiconductor material; an active layer arranged on the n-type semiconductor layer, and is made of an AlGaN-based semiconductor material; a p-type semiconductor layer arranged on the active layer; a p-side contact electrode that contacts the top face of the p-type semiconductor layer; a dielectric protective layer that covers the p-side contact electrode, contacts the top face of the p-type semiconductor layer, and is made of SiO2; and a dielectric cover layer that contacts the individual side faces of the active layer and the p-type semiconductor layer, contacts the top face of the p-type semiconductor layer, covers the dielectric protective layer, and is made of Al2O3.

Abstract: A reinforcing member includes a plate-shaped member that is made of a fiber-reinforced resin in which a continuous fiber is used as a reinforcement fiber and that has a first surface and a second surface. The plate-shaped member includes an outer circumferential portion that defines an outer edge of the plate-shaped member, a convex portion that is convex on a side of the first surface in an area inside the outer circumferential portion, and a plurality of concave portions that are concave on the side of the first surface in an area inside the convex portion.

Abstract: A nitride semiconductor light-emitting element emits ultraviolet light at a central wavelength of more than 320 nm and not more than 365 nm. The nitride semiconductor light-emitting element includes a substrate having a c-plane as a growth surface and a nitride semiconductor layer stacked on the growth surface of the substrate. The nitride semiconductor layer includes an n-type semiconductor layer, and an active layer being formed on the n-type semiconductor layer on the opposite side to the substrate and comprising a single quantum well structure with one well layer. The n-type semiconductor layer has an Al composition ratio of not more than 50% and a film thickness of more than 2 ?m. A composition difference obtained by subtracting an Al composition ratio of the well layer from the Al composition ratio of the n-type semiconductor layer is not less than 22%.

Abstract: A microwave device capable of increasing an amount of heat generated at the tip end thereof. The microwave device having a central conductor that transmits microwaves, an insulator covering the central conductor, and an external conductor covering the insulator. The central conductor is exposed to the outside from a tip end of a microwave irradiation part for the first time, and an externally exposed part of the exposed central conductor is bent toward the base end side of the microwave emitting unit so as to be along the external conductor.

Abstract: A blood circuit and a dialysate circuit bidirectionally circulate a fluid through a blood purification membrane of a blood purifier, and include a first flow route that causes a dialysate to flow from the dialysate circuit into the blood circuit through a connection flow route connecting the dialysate circuit to the blood circuit while bypassing the blood purifier, and a second flow route that causes the dialysate to flow from the dialysate circuit into the blood circuit through the blood purification membrane. The controller performs control such that blood in the blood circuit is returned to the body by feeding the dialysate to one of these flow routes, determine if a flow amount of the dialysate reaches a predetermined flow amount, and control such that the blood in the blood circuit is returned to the body by feeding the dialysate to the other one of these flow routes.

Abstract: A foot valve assembly according to the present invention includes: an adapter attached to a lower opening end of a pump column configured to accommodate a pump configured to be submerged in a handling liquid, the adapter accommodating a suction port of the pump; a disc-shaped valve disc including a flow path defining surface that is located below a lower end surface of the adapter and defines an inflow path allowing the handling liquid to flow into the pump between the surfaces, the valve disc opening and closing a lower opening of the adapter; a biasing member biasing the valve disc toward the adapter; and a one-way valve disposed in the inflow path, the valve opening for fluid discharged from the lower opening depending on a pressure of the fluid and closing for the handling liquid flowing toward the lower opening when the valve disc is closed.

Abstract: Provided is a method for regenerating a liquid to be treated, the method includes bringing a lactic acid adsorbent that contains a Mg—Al-based layered double hydroxide having Mg2+ and Al3+ as constituent metals, and an ammonia adsorbent having L-type zeolite, into contact with the liquid to be treated that contains lactic acid and ammonia, to remove lactic acid and ammonia in the liquid to be treated.

Abstract: A nitride semiconductor light-emitting element includes an n-type semiconductor layer, an active layer being formed on the n-type semiconductor layer and emitting ultraviolet light, an electron blocking layer formed on the active layer, and a p-type semiconductor layer formed on the electron blocking layer. Pits are formed in the active layer and the electron blocking layer. A density of the pits on an upper surface of the electron blocking layer is not less than 7.0×107 pits/cm2 and not more than 1.8×109 pits/cm2.

Abstract: A nitride semiconductor light-emitting element includes a substrate, a buffer layer formed on the substrate, an n-type semiconductor layer formed on the buffer layer, and an active layer being formed on the n-type semiconductor layer and comprising a single quantum well structure. A full width at half maximum of an X-ray rocking curve for a (102) plane of the buffer layer is not less than 369.4 arcsec and not more than 492.5 arcsec.

Abstract: Provided is a blood purification apparatus that returns blood in a blood circuit to a body. A blood purification apparatus includes: a blood circuit and a dialysate circuit coupled to each other through a blood purifier; an air introduction route coupled to the dialysate circuit; an air introducer provided to any of the dialysate circuit and the air introduction route and configured to set the dialysate circuit to a positive pressure by introducing air into the dialysate circuit through the air introduction route; and a controller configured to control the air introducer in such a way as to feed a dialysate from the dialysate circuit to the blood circuit, and to control the blood circuit and the dialysate circuit in such a way as to return blood in the blood circuit and the blood purifier to a body by feeding the dialysate from the dialysate circuit to the blood circuit.

Abstract: A foot valve assembly according to the present invention includes: a cylindrical adapter attached to a lower opening end of a cylindrical pump column configured to accommodate a pump configured to be submerged in a handling liquid, the adapter configured to accommodate a suction port of the pump; a disc-shaped valve disc configured to open and close a lower opening of the adapter corresponding to raising and lowering of the pump; a biasing member that biases the valve disc toward the adapter; and an auxiliary valve configured to open and close corresponding to the raising and lowering of the pump and configured to assist in opening the valve disc when the valve disc is closed.

Abstract: A nitride semiconductor ultraviolet light-emitting element is provided. The element includes a light-emitting element structure part with an n-type layer, an active layer, and a p-type layer stacked vertically, which are made of AlGaN-based semiconductors with wurtzite structure. The n-type layer has an n-type AlGaN-based semiconductor, the active layer has well layers including an AlGaN based semiconductor, and the p-type layer has a p-type AlGaN-based semiconductor. Each semiconductor layer in the n-type and the active layers is an epitaxially grown layer having a surface on which multi-step terraces parallel to the (0001) plane are formed. The n-type layer has first Ga-rich regions which include n-type AlGaN regions in which an AlGaN composition ratio is an integer ratio of Al7Ga5N12, and each extending direction of the stratiform regions is inclined with respect to the upper surface of the n-type layer.

Abstract: A method for manufacturing a nitride semiconductor light-emitting element includes growing a p-type cladding layer with an average Al composition ratio in a thickness direction of not less than 70%, and growing a p-type contact layer with an Al composition ratio of not more than 10%. A flow rate ratio Fp/FIII is a p/III ratio and a flow rate ratio FV/FIII is a V/III ratio. The p-type cladding layer is grown in the growing the p-type cladding layer at a growth rate of not more than 2.5 nm/min, a p/III ratio of not less than 0.0002 and not more than 0.0400 and a VIII ratio of not more than 7000. The p-type contact layer is grown in the growing the p-type contact layer at a growth rate of not more than 3.3 nm/min, a p/III ratio of not less than 0.0200 and a V/III ratio of not less than 10000.

Abstract: A nitride semiconductor ultraviolet light-emitting element is provided. The element includes a light-emitting element structure part with an n-type layer, an active layer, and a p-type layer stacked vertically, which are made of AlGaN-based semiconductors with wurtzite structure. The n-type layer has an n-type AlGaN-based semiconductor, the active layer has well layers including an AlGaN based semiconductor, and the p-type layer has a p-type AlGaN-based semiconductor. Each semiconductor layer in the n-type and the active layers is an epitaxially grown layer having a surface on which multi-step terraces parallel to the (0001) plane are formed. The n-type layer has first Ga-rich regions which include n-type AlGaN regions in which an AlGaN composition ratio is an integer ratio of Al1Ga1N2. The well layer includes a second Ga-rich region, which includes an AlGaN region in which an AlGaN composition ratio is an integer ratio of Al1Ga2N3.

Abstract: A nitride semiconductor ultraviolet light-emitting element is provided. The element includes a light-emitting element with n-type, active, and p-type layers stacked vertically and made of AlGaN-based wurtzite structured semiconductors. The active layer has a quantum-well structure and each layer is epitaxially grown having a surface on which multi-step terraces parallel to the (0001) plane are formed. The n-type layer has a stratiform regions with locally lower AlN mole fraction which is inclined with respect to an upper surface of the n-type layer. The p-type layer has a lowermost electron blocking layer and an uppermost contact layer. Each semiconductor layer in the active layer and the electron blocking layer have inclined regions with respect to the (0001) plane connecting adjacent terraces of the multi-step terraces, and terrace regions other than inclined regions. An AlN mole fraction of the terrace regions in the electron blocking layer is between 69% and 89%, inclusive.