Abstract: A semiconductor light emitting element includes: an n-type clad layer of an n-type aluminum gallium nitride (AlGaN)-based semiconductor material; an active layer of an AlGaN-based semiconductor material provided on a first top surface of the n-type clad layer; and an n-side electrode provided on a second top surface of the n-type clad layer adjacent to the first top surface. The n-side electrode includes a first metal layer on the second top surface containing titanium (Ti) and a second metal layer on the first metal layer containing aluminum (Al). A root-mean-square roughness (Rq) of a top surface of the second metal layer is 5 nm or less.

Abstract: A nitride semiconductor light-emitting element includes an n-type semiconductor layer, a p-type semiconductor layer, an active layer provided between the n-type semiconductor layer and the p-type semiconductor layer, and an electron blocking layer comprising Al and being provided between the active layer and the p-type semiconductor layer. The electron blocking layer partially includes a high Al composition portion in at least one cross section orthogonal to a stacking direction, the high Al composition portion having an Al composition ratio higher than a surrounding portion.

Abstract: A nitride semiconductor light-emitting element includes an n-type semiconductor layer, a p-type semiconductor layer, an active layer, and an electron blocking layer comprising at least one layer. The at least one layer of the electron blocking layer includes a peak-containing layer having an n-type impurity concentration peak in an n-type impurity concentration distribution along a stacking direction. The n-type impurity concentration peak appears as a local maximum in the n-type impurity concentration distribution along the stacking direction in the peak-containing layer and has an n-type impurity concentration of not less than 10 times a smallest value of the n-type impurity concentration in a region along the stacking direction between positions that are separated from a position of the peak in the stacking direction on both sides in the stacking direction by 10% of a thickness of the peak-containing layer.

Abstract: A semiconductor light emitting device includes: a light emitting part for emitting ultraviolet light; and a coating part that coats a part of an extraction surface from which the ultraviolet light emitted by the light emitting part is extracted. The coating part is comprised of a plurality of isolated parts distanced from each other, and the isolated part is made of a second material having a refractive index that is lower than a refractive index of a first material forming the extraction surface.

Abstract: A nitride semiconductor light-emitting element outputs ultraviolet light. The nitride semiconductor light-emitting element includes an active layer including a quantum well structure that generates the ultraviolet light, a dislocation suppression structure-containing layer being formed on the active layer and including a dislocation suppression structure that stops or bends a dislocation from the active layer; and a p-type contact layer being formed on the dislocation suppression structure-containing layer and having a thickness of not less than 10 nm and not more than 30 nm.

Abstract: A semiconductor light-emitting element includes: an n-type clad layer of an n-type aluminum gallium nitride (AlGaN)-based semiconductor material provided on a substrate; an active layer of an AlGaN-based semiconductor material provided on the n-type clad layer and configured to emit deep ultraviolet light having a wavelength of not shorter than 300 nm and not longer than 360 nm; and a p-type semiconductor layer provided on the active layer. The n-type clad layer is configured such that a transmittance for deep ultraviolet light having a wavelength of 300 nm or shorter is 10% or lower.

Abstract: A water supply system for aircraft that is mounted on an aircraft to supply water to a plurality of water supply outlets in the aircraft. The water supply system for aircraft includes a tank for storing water, a water supply pipe, and an ultraviolet sterilization device. The water supply pipe extends from the tank, branches and is connected to each of the plurality of water supply outlets, and supplies water from the tank to the plurality of water supply outlets. The ultraviolet sterilization device is provided on the water supply pipe close to at least the water supply outlet for drinking water, includes a light-emitting diode emitting ultraviolet light, and sterilizes water supplied to the water supply outlet by irradiating the water with ultraviolet light from the light-emitting diode.

Abstract: An infection preventing device includes air barrier forming units that include an air inlet for taking in air from a rear in a front-rear direction, an air purification mechanism for creating clean air by purifying the air taken in from the air inlet, and an air outlet for blowing the clean air toward the front in the front-rear direction, and are capable of blowing out the clean air from the air outlet in the form of layer perpendicular to the left-right direction. The air barrier forming units provided on the seats adjacent in the front-rear direction face in the front-rear direction, and it is configured that air including clean air blown out of the air outlet of the rear air barrier forming unit can be taken in by the air inlet of the front air barrier forming unit.

Abstract: A stacked body comprising: a semiconductor layer comprising a group III-V nitride semiconductor, and an electrode layer, wherein the electrode layer comprises magnesium oxide and zinc oxide, wherein the molar ratio of magnesium based on the sum of magnesium and zinc of the electrode layer [Mg/(Mg+Zn)] is 0.25 or more and 0.75 or less, and conductivity of the electrode layer is 1.0×10?2 S/cm or more.

Abstract: An air cleaning apparatus includes: a collection filter for collecting dust; a first ultraviolet light emitter for irradiating the collection filter with ultraviolet light having a first wavelength; and a photocatalyst supporting filter which supports a photocatalyst exhibiting photocatalytic activity by the ultraviolet light having the first wavelength and collects the dust. The collection filter transmits the ultraviolet light having the first wavelength, and the ultraviolet light having the first wavelength passing through the collection filter is irradiated to the photocatalyst supporting filter.

Abstract: A nitride semiconductor light-emitting element includes an n-type cladding layer including n-type AlGaN having a first Al composition ratio, a barrier layer including AlGaN that is located on the n-type cladding layer side in a multiple quantum well layer and has a second Al composition ratio greater than the first Al composition ratio, and a graded layer that is located between the n-type cladding layer and the barrier layer and has a third Al composition ratio that is between the first Al composition ratio and the second Al composition ratio, wherein the third Al composition ratio of the graded layer increases at a predetermined increase rate from the first Al composition ratio toward the second Al composition ratio.

Abstract: A semiconductor light emitting element includes: an n-type semiconductor layer made of an n-type aluminum gallium nitride (AlGaN)-based semiconductor material provided on a substrate; an active layer made of an AlGaN-based semiconductor material provided on the n-type semiconductor layer; a p-type semiconductor layer provided on the active layer; and a covering layer made of a dielectric material that covers the n-type semiconductor layer, the active layer, and the p-type semiconductor layer. Each of the active layer and the p-type semiconductor layer has a sloped surface that is sloped at a first angle with respect to the substrate and is covered by the covering layer. The n-type semiconductor layer has a sloped surface that is sloped at a second angle larger than the first angle with respect to the substrate and is covered by the covering layer.

Abstract: A trocar is used by inserting a distal end thereof into a body cavity of a patient. The trocar includes: an inner tube that has a center pipeline; an outer tube that is disposed so as to cover an outer periphery of the inner tube and has a front end that is positioned rearward of a front end of the inner tube; an annular channel that is formed between the inner tube and the outer tube and has an ejection port at the front end position of the outer tube; and a flow control member that is provided on the inner tube at a position forward of the front end of the outer tube and facing the ejection port, the flow control member having an inclined surface located at the rear end that slants radially outward.

Abstract: A light emitting apparatus includes: a package substrate that includes a recess that opens on a top surface of the package substrate; a light emitting device housed in the recess; a window member provided to cover an opening of the recess; and a metal bonding part that seals a space between the package substrate and the window member. The package substrate includes a packaging surface on which the light emitting device is mounted and a metal electrode is provided, an isolation surface provided in a shape of a frame on an outer side of the packaging surface, and a light reflection surface sloping from the isolation surface toward the top surface, and a metal layer is provided on the light reflection surface with a clearance from the isolation surface.

Abstract: A semiconductor light emitting device includes a light extraction layer having a light extraction surface. Multiple cone-shaped parts formed in an array are provided on the light extraction surface. The cone-shaped part has a first portion having a first angle of inclination of a side surface and a second portion having a second angle of inclination of a side surface smaller than the first angle. The second portion is closer to an apex of the cone-shaped part than the first portion and has a larger height than the first portion.

Abstract: A light emitting apparatus includes: a package substrate; a light emitting device housed in a recess of the package substrate; a window member provided to cover an opening of the recess; and a sealing structure that seals a space between the package substrate and the window member. The window member includes a glass plate having an inner surface that faces the optical semiconductor device and a frame body provided on the inner surface of the glass plate. The sealing structure includes a first metal layer provided on a top surface of the package substrate, a second metal layer provided on a bottom surface and an inner circumferential surface of the frame body, and a metal bonding part provided between the first and second metal layers, at least a portion of the metal bonding part being provided on the inner circumferential surface.

Abstract: A semiconductor light emitting element includes: an n-type semiconductor layer provided on a substrate; an active layer provided in a first region of the n-type semiconductor layer and made of an AlGaN-based semiconductor material; a p-type semiconductor layer provided on the active layer; a first protective layer provided on the p-type semiconductor layer and made of silicon oxide (SiO2) or silicon oxynitride (SiON); a second protective layer provided to cover a top of the first protective layer, a second region on the n-type semiconductor layer different from the first region, and a lateral surface of the active layer and made of aluminum oxide (Al2O3), aluminum oxynitride (AlON), or aluminum nitride (AlN); a p-side electrode provided contiguously on the p-type semiconductor layer; and an n-side electrode provided contiguously on the n-type semiconductor layer.

Abstract: A nitride semiconductor light-emitting element includes a light-emitting layer comprising a well layer comprising AlGaN and emitting ultraviolet light; an electron blocking layer being located on the light-emitting layer and comprising AlGaN with a first Al composition ratio higher than an Al composition ratio of the well layer; and a p-type cladding layer being located on the electron blocking layer, comprising AlGaN with a second Al composition ratio higher than the Al composition ratio of the well layer and lower than the first Al composition ratio, and being doped with a predetermined concentration of a p-type dopant. An interface between the electron blocking layer and the p-type cladding layer is doped with not less than a predetermined amount of an n-type dopant.

Abstract: This canned motor (10) is provided with a rotor (14); a cylindrical rotor can (42) that houses the rotor (14); an end plate (40) that covers an opening of the rotor can (42) in the axial direction and is joined to the rotor can (42); a rotating shaft (16) that passes through the rotor (14) and the end plate (40); and an annular wall (46) that surrounds the outer circumference of the rotating shaft (16), is joined to or integrated with the end plate (40), and is joined to the entire circumference of the rotating shaft (16) at an end thereof in the axial direction. The thickness of the end plate (40) is larger than the thickness of the annular wall (46).

Abstract: A tube connector is configured to connect between a main tube and a peristaltically-actuated tube. The tube connector includes a first connection part configured to be connected to the main tube; a second connection part configured to be connected to the peristaltically-actuated tube; a communication part being provided between the first connection part and the second connection part and having a communication flow path for communicating between a first flow path through which fluid flows in the first connection part and a second flow path through which the fluid flows in the second connection part; and a main body section. The first flow path and the second flow path are formed to have a constant diameter and are formed so as to extend along the axial direction of the main body section. A diameter of the first flow path is smaller than a diameter of the second flow path. The communication flow path is formed so as to gradually enlarge in diameter from a first flow path side to a second flow path side.