Abstract: A semiconductor memory device comprises at least one word line, a plurality of bit lines extending across the word line, a data memory cell unit including a plurality of data memory cells connected between the word line and the bit lines for storing information, a plurality of first extra bit lines corresponding to first groups of the bit lines, each of which has k bit lines (k is an integer), and extending across the word line, a plurality of first extra memory cells connected between the word line and the first extra bit lines for storing first checking information with respect to the first groups of the bit lines, a plurality of second extra bit lines corresponding to second groups of the bit lines, each of which group has m bit lines (m is an integer), and extending across the word line, a plurality of second extra memory cells connected between the word line and the second extra bit lines for storing second checking information with respect to the second groups of the bit lines, an error detection circui

Abstract: A plurality of photoconductive cells are each formed on an insulating substrate to extend in a straight line. The photoconductive cells are divided into m groups, each consisting of n cells, which is connected at one end to a common electrode, and corresponding ones of the photoconductive cells of the m groups are connected to individual select electrodes, respectively. By turning ON group select switches in a sequential order, the common electrodes are connected to a power source one at a time and, by sequentially turning ON individual select switches, the individual select electrodes are connected to a load one at a time. The common electrodes are grounded via grounding switches which operate reversely from select switches connected to the common electrodes. The individual select electrodes are grounded via grounding switches which operate reversely from select switches connected to the individual select electrodes.

Abstract: An ion shower apparatus comprising a plasma formation chamber in which plasma is produced so as to produce ions, a single ion extraction grid disposed in one portion of the plasma formation chamber and for extracting the ions from the plasma formation chamber so as to form an ion beam in the form of shower, a specimen chamber in which the surface of a specimen subjected to etching or deposition or a target subjected to sputtering is irradiated with the ion beam in the form of shower, and a shield grid disposed in the vicinity of the ion extraction grid in the plasma formation chamber and spaced apart from the thickness of the plasma sheath produced over the ion extraction grid, in a manner that the shield grid permits the passage of the plasma therethrough and prevents the electric field produced by the ion extraction grid substantially from extending to the remaining region of the plasma formation chamber. The ion extraction grid is not damaged. An ion beam with a high current is obtained stably.

Abstract: A semiconductor manufacturing method which uses a refractory metal as a lift-off material and employs, in combination, a dry etching process suitable for forming a miniature pattern without undercutting and a film deposition method for deposing the lift-off material with directionality in a direction perpendicular to the substrate surface. A semiconductor device is fabricated by a lift-off method which is free from the fear of contamination, permits easy lift off of the lift-off material, even if large in area, and hence suitable for the formation of a high-density pattern.

Abstract: A semiconductor memory device comprises a gate electrode provided via a gate insulating film on a semiconductor layer formed on a substrate and two diffused semiconductor regions provided to form a field effect transistor together with the gate electrode. An electrical charge is supplied to one of the diffused regions from the other region to thereby vary a width of a space charge layer appearing around the one diffused region so that informations "1" and "0" are selectively stored in the device. The stored information is read-out by detecting presence or absence of a buried channel between the space charge layer and the substrate.

Abstract: A dot matrix printer having a printer hammer bank carried on a frame to allow movement parallel to the platen. A balancing member is suspended from the head hammer bank by resilient springs and carries a motor for driving the head hammer bank in a reciprocating manner. A linkage further couples the head hammer bank and the balancing member so that the balancing member moves in a direction opposite to that of the head hammer bank.

Abstract: A testing system connects a subscriber line to be tested by way of a semiconductor switch of a type driven by a constant current to a test equipment to test a subscriber line and a terminal equipment. The test system includes a compensation circuit having means for measuring a constant current component contained in a current flowing through the semiconductor switch into a test line, and means for drawing a constant current component to drive the switch through the test line on the basis of the measuring result to supply the current component obtained by subtracting the constant current component from the current flowing through the test line to the testing equipment.

Abstract: A method and apparatus of deflection calibration for a charged particle beam exposure apparatus having an electromagnetic deflector and an electrostatic deflector both for deflecting a charged particle beam and a movable stage structure. The electromagnetic deflector is previously subjected to a calibration operation known per se. With a fiducial mark positioned in a predetermined location, the beam is deflected by the calibrated electromagnetic deflector instead of moving the stage structure, the beam is then deflected by the electrostatic deflector to detect the location of the fiducial mark, and deflection data are measured of the electrostatic deflection for the detection of the location of the fiducial mark. According to the present invention the calibration is performed in a short time without causing degradation of the precision of, e.g., lithography due to heat generated by movement of the stage structure.

Abstract: A copper alloy which is high in strength and electroconductivity is manufactured by casting, without chill casting, a copper alloy mass substantially consisting of copper and containing 0.2 to 1.5% by weight of chromium and 0.01 to 0.5% by weight of tin, hot working the cast copper alloy mass, then cooling, not slowly, the hot worked alloy mass without being subjected to any solid solution treatment, further cold working the cooled alloy mass, and thereafter subjecting the cold worked alloy mass to an aging treatment.

Abstract: A small-sized video or audio reading pickup device in which a light beam generator generates a light beam directed to a focussing device which focuses the light beam into a beam spot on an information carrier. The focussing device is mounted on an upper portion of a cylindrical hollow support disposed in a resiliently supported frame and a beam deflecting mirror is fixedly mounted within the cylindrical hollow support and independently thereof in vertical alignment with the focussing device. A light beam generated by the beam generating device is laterally directed to and deflected off the deflecting mirror and focused via the focussing device onto the information carrier, with the vertical positioning of the cylindrical hollow support being controlled to control the size of the beam spot. Lateral positioning of the light beam on the carrier is also controlled by lateral translation of the frame, and a photo-sensitive detector is arranged to detect light beam intensity reflected from the carrier.

Abstract: In an electron beam control system wherein manual adjusting means is used for adjusting currents to flow through two deflection coils which serve to deflect an electron beam in directions of two, x and y axes, respectively; an electron beam control system wherein the manual adjusting means comprises a joy stick type variable resistor which can simultaneously deliver coil deflection signal components in the directions of the two axes through a single operation, and the signal components from the variable resistor are applied to the corresponding deflection coils as adjusting currents.

Abstract: A selective call receiver with display is disclosed. The receiver includes a decoder comprised of a reception controller in the form of a dedicated LSI circuit and a display controller in the form of a single chip CPU which, in combination, overcomes inherent weakness in each, namely the relatively large power consumption of a single chip CPU and the difficulty of reconfiguring a dedicated LSI circuit to perform different and/or additional functions.

Abstract: A printer head having a circular first yoke, a cylindrical permanent magnet fixed on the circular first yoke, a (n) number of electromagnets (n is an integer) positioned on a circle on the first yoke within the permanent magnet having predetermined angle intervals, a ring shaped second yoke fixed on the permanent magnet so that the upper surface of the second yoke is on the same plane as that of the upper surface of the electromagnets, a ring shaped spacer positioned on the second yoke, a disk shaped spring fixed on the spacer having a common outer ring and a (n) number of projections projected in the internal direction from the common outer ring, (n) number of armatures each fixed on each projection of the spring, (n) number of print needles each fixed to each armature so that a print needle is perpendicular to the plane of the spring, a circular yoke plate fixed on the spring having (n) number of radial slits for accepting the armatures and the width of each slit being narrower than the width of projection

Abstract: The invention provides a positive resist comprising a copolymer of 60 to 90 mol % of phenylmethacrylate and 40 to 10 mol % of methacrylic acid.The invention also provides a method for forming a pattern of a positive resist comprising the steps of:forming on a substrate a film of a positive resist which comprises a copolymer of 60 to 90% of phenylmethacrylate and 40 to 10 mol % of methacrylic acid;pre-baking said positive resist film to cross-link said copolymer;selectively radiating said positive resist film which has been pre-baked with a high energy beam to form a latent image; anddeveloping said latent image with a developing solvent. Said positive resist has excellent resistance to dry etching and high sensitivity, and shows good adhesion to a substrate and can realize high resolution.

Abstract: In a semiconductor laser, a laminated multi-layer body is on a prescribed region of the surface of a semiconductor substrate of first conductivity type, and a burying laminated layer body surrounds the laminated layer body in contact with the lateral wall thereof. The laminated layer body includes a first cladding layer having the first conductivity type, a first active layer, a second cladding layer having the opposite conductivity type (second conductivity type) to that of the semiconductor substrate, a second active layer and a third cladding layer of the first conductivity type. The burying laminated layer body includes a semiconductor electrode layer of the second conductivity type and low specific resistivity which substantially contacts the second cladding layer, and two groups of burying layers respectively provided on the prescribed regions of the top and bottom surface of said semiconductor electrode layer.

Abstract: A method for forming a micropattern, comprises the steps of forming an organic polymeric material layer on a substrate, forming a silicone layer on the organic polymeric material layer, selectively irradiating a surface of the silicone layer with a high-energy beam, exposing the surface of the silicone layer to a radical addition polymerizable monomer gas so as to form a graft polymer film on an irradiated portion of the surface of the silicone layer, performing reactive ion etching using the graft polymer film as a mask so as to form a silicone pattern, and performing reactive ion etching using the silicone pattern as a mask so as to form an organic polymeric material pattern. The method allows formation of a resist pattern with a high precision and a high aspect ratio.

Abstract: Halides of Si and Ti, B, P, or Ge and oxygen or steam are introduced into a reaction vessel and heated in a vapor phase to form fine glass particles by oxidation or hydrolysis. The fine glass particles are deposited on a substrate. The deposited fine glass particles are heated and vitrified into a transparent glass layer, which is etched to form a core having a desired pattern by a reactive sputter etching process using Freon gas. The core is coated by a clad. In a waveguide thus formed, the cross sectional configuration and dimensions of the core layer and the refractive index difference are precisely controlled. The waveguide is manufactured with good reproducibility. The fabrication method is suitable for mass production of waveguides. An expansion coefficient transient layer is provided between the core layer and the substrate to prevent a crack in the waveguide.

Abstract: A process for producing an optical fiber preform in a muffle furnace by hydrolyzing a gaseous glass forming material with a flame from an oxyhydrogen burner and depositing the resulting soot in a rod shape and an apparatus therefor are described, wherein a gas is supplied to the muffle furnace other than from said burner, and the volume supply of said gas is held constant by controlling the amount of a control gas supplied into an intermediate portion of an exhaust pipe through which the gases formed in the muffle furnace and the fine glass particles that do not deposit in a rod shape are discharged.

Abstract: There is described a method of producing a rod-shaped base material for an optical transmission fiber which has the steps of advantageously measuring the refractive index distribution of the transparent glass rod obtained. The method contemplates heating and sintering the glass soot unit before the step of covering quartz glass material onto the transparent glass rod and removing the outer peripheral part of the transparent glass rod in which the value of the refractive index is largely displaced from a reference in a predetermined range. The rod-shaped base material thus produced exhibits very wide band width transmission characteristics.

Abstract: An analog scan signal having a repetitive background waveform is converted into a multi-level signal through a peek hold circuit, a converter, a digital memory and a discriminator. The peak hold circuit detects and holds the peak voltage of the current scan lines. The background waveform is normalized by the peak voltage and converted into a digital signal in the converter and stored in the memory. The analog scan signal is discriminated in the discriminator on the basis of a reference voltage produced with the normalized background waveform read out of the memory and converted in the converter and with the current peak voltage supplied from the peak hold circuit.