Abstract: An ion source includes a plasma chamber, and a suppression electrode disposed downstream of the plasma chamber, and is operable to irradiate the suppression electrode with an ion beam produced from a cleaning gas to clean the suppression electrode. Prior to cleaning, the ion source moves the suppression electrode or the plasma chamber in a first direction to increase a distance between the plasma chamber and the suppression electrode.

Abstract: A heating device is provided. The heating device includes a conveyance member that conveys a substrate between a heating position and a non-heating position, a support member that is provided on the conveyance member and that supports the substrate, a heater provided at the heating position and operable to heat a first surface of the substrate, and a heat reflecting plate attached to the conveyance member in facing relation to a second surface of the substrate opposite to the first surface.

Abstract: A beam profile determination method and ion implantation apparatus implanting the same is provided. The method includes measuring a beam profile of an ion beam in a direction orthogonal to a scanning direction of a substrate and a traveling direction of the ion beam; computing, based on the measured beam profile, a uniformity of a dose distribution of a part of the ion beam with which a surface of the substrate is irradiated when the substrate is scanned; and comparing the computed uniformity of the dose distribution with a first reference value to determine an adequacy of the beam profile of the ion beam.

Abstract: A substrate heating device is provided. The substrate heating device includes a vacuum chamber and a heater. The vacuum chamber receives a substrate. The heater includes a body, a heating wire, and a terminal part. The body penetrates through a wall of the vacuum chamber such that a portion of the body is in a vacuum atmosphere of the vacuum chamber. The heating wire is provided inside the body and partly disposed inside the vacuum chamber. The terminal part is connected to the heating wire and is disposed outside the vacuum chamber.

Abstract: A heating device is provided. The heating device includes a conveyance member, first and second support members, and a heat reflecting plate. The first support member is provided on the conveyance member and supports a substrate during movement of the conveyance member. The second support member includes a heater and supports the substrate during processing of the substrate. The heat reflecting plate travels with the conveyance member and reflects heat from the heater toward the substrate.

Abstract: An ion beam irradiation apparatus includes modules for generating an ion beam meeting a processing condition, and a machine learning part that generates a learning algorithm using, as an explanatory variable, a processing condition during new processing and a monitored value that indicates a state of a module during a last processing immediately before the new processing, and a basic operation parameter output part that uses the learning algorithm to output an initial value of a basic operation parameter for controlling an operation of the module.

Abstract: An apparatus provided with a wafer processing chamber that houses a wafer supporting mechanism supporting a wafer and is used to irradiate the wafer supported by the wafer supporting mechanism with an ion beam and a transport mechanism housing chamber that houses a transport mechanism provided underneath the wafer processing chamber and used for moving the wafer supporting mechanism in a substantially horizontal direction, wherein an aperture used for moving the wafer supporting mechanism along with a coupling member coupling the wafer supporting mechanism to the transport mechanism is formed in the direction of movement of the transport mechanism in a partition wall separating the wafer processing chamber from the transport mechanism housing chamber.

Abstract: A substrate accommodation device includes a casing, a gas supply that supplies a gas into the casing, and a transfer structure which retains substrates vertically spaced apart from each other and vertically transfers the substrates first-in-first-out from a carry-in position to a carry-out position within the casing. The gas heats or cools the substrates as the substrates are transferred first-in-first-out from the carry-in position to the carry-out position.

Abstract: An ion source includes a plasma chamber, and a suppression electrode disposed downstream of the plasma chamber, and is operable to irradiate the suppression electrode with an ion beam produced from a cleaning gas to clean the suppression electrode. Prior to cleaning, the ion source moves the suppression electrode or the plasma chamber in a first direction to increase a distance between the plasma chamber and the suppression electrode.

Abstract: An ion source is provided. The ion source includes a plasma generation container, an electron supply, an electromagnet and a shift means. The plasma generation container generates an ion beam to be extracted therefrom in an ion beam extraction direction. The electron supply supplies electrons into the plasma generation container. The electromagnet generates a magnetic field for capturing the electrons from the electron supply. The shift means shifts a center of the magnetic field in the ion beam extraction direction to change a rate of a desired type of ion to be contained in the ion beam.

Abstract: A method and apparatus are provided. The method includes selectively supplying a neutralizing gas to a position on a trajectory of an ion beam between an extraction electrode system and an analysis slit based on a composition of a dopant gas introduced into an ion source that produces the ion beam. The apparatus includes the ion source, the extraction electrode system, the analysis slit, and a gas supply system that selectively supplies the neutralizing gas to the position on the trajectory.

Abstract: An apparatus is provided. The apparatus includes a beam current measuring device and a first electrode. The beam current measuring device is retractably movable into an ion beam trajectory so as to measure an ion beam current. The first electrode is disposed immediately upstream of the beam current measuring device in an ion beam transport channel. The first electrode serves both as a suppressor electrode for repelling secondary electrons released from the beam current measuring device, back toward the beam current measuring device, and as a beam optical element other than the suppressor electrode.

Abstract: A device is provided. The device includes a body, a heat absorber, a test piece and a contact thermometer. The heat absorber is attached to the body. The test piece is attached to the body and spaced apart from the heat absorber. The test piece has an overlap region that is overlapped by the heat absorber such that the heat absorber absorbs heat radiated toward the device and a non-overlap region which does not overlap with the heat absorber and which is exposed to the heat radiated toward the device. The contact thermometer is coupled to the overlap region. The test piece has a thermal transmissivity approximately equal to that of a substrate, and the device positions the overlap region of the test piece adjacent to the substrate being radiated by the heat.

Abstract: A substrate holding device is provided. The substrate holding device includes a substrate holder, a shaft attached to the substrate holder, a motor attached to the shaft, lifting pins, and a transmission assembly. The lifting pins are movable between a retracted position below a surface of the substrate holder, and a protruded position protruding from the surface. The transmission assembly is provided between the shaft and lifting pins and switches the substrate holding device between a transmittable state in which a driving force from the motor is transmitted to the lifting pins to move the lifting pins between the retracted position and the protruded position, and a non-transmittable state in which the driving force from the motor is not transmitted to the lifting pins but rotates the substrate holder.

Abstract: An ion source is provided. The ion source includes a plasma generation chamber, a plate member, and an extraction electrode. The plasma generation chamber is supplied with a halogen-containing material. The plate member is provided on an end of the plasma generation chamber located on a side toward which an ion beam is extracted. The extraction electrode is disposed downstream of the plate member. The plate member is formed with a gas supply passage via which hydrogen gas is supplied to the extraction electrode.

Abstract: An ion source for improving beam transport efficiency regarding a ribbon beam is provided. The plasma generation container is formed with a beam extraction port at an end thereof. The shielding member plugs the beam extraction port and comprises three or more elongate holes each of which is long in a lateral direction of a ribbon beam to be extracted through the shielding member and which are arranged in the form of an array extending in the lateral direction, wherein a first length one of the elongate holes located in a central region of the array is shorter than a second length of one of the remaining elongate holes located on an end side of the array.

Abstract: An apparatus is provided. The apparatus includes a beam current measuring device and a first electrode. The beam current measuring device is retractably movable into an ion beam trajectory so as to measure an ion beam current. The first electrode is disposed immediately upstream of the beam current measuring device in an ion beam transport channel. The first electrode serves both as a suppressor electrode for repelling secondary electrons released from the beam current measuring device, back toward the beam current measuring device, and as a beam optical element other than the suppressor electrode.

Abstract: A plasma source is provided. The plasma source includes a chamber body inside which plasma is generated, a first mirror magnet, a second mirror magnet, and a cusp magnet provided around the chamber body and spaced apart in a axial direction thereof, each comprising permanent magnets radially spaced apart from each other to form spaces between adjacent permanent magnets thereof; and a cooling medium flow passage provided in the spaces that passes a cooling medium for cooling the chamber body.

Abstract: An ion source for improving beam transport efficiency regarding a ribbon beam is provided. The plasma generation container is formed with a beam extraction port at an end thereof. The shielding member plugs the beam extraction port and comprises three or more elongate holes each of which is long in a lateral direction of a ribbon beam to be extracted through the shielding member and which are arranged in the form of an array extending in the lateral direction, wherein a first length one of the elongate holes located in a central region of the array is shorter than a second length of one of the remaining elongate holes located on an end side of the array.

Abstract: An ion source is provided. The ion source includes a plasma generation container, an electron supply, an electromagnet and a shift means. The plasma generation container generates an ion beam to be extracted therefrom in an ion beam extraction direction. The electron supply supplies electrons into the plasma generation container. The electromagnet generates a magnetic field for capturing the electrons from the electron supply. The shift means shifts a center of the magnetic field in the ion beam extraction direction to change a rate of a desired type of ion to be contained in the ion beam.