Abstract: A plasma source is provided. The plasma source includes a chamber body inside which plasma is generated, a first mirror magnet, a second mirror magnet, and a cusp magnet provided around the chamber body and spaced apart in a axial direction thereof, each comprising permanent magnets radially spaced apart from each other to form spaces between adjacent permanent magnets thereof; and a cooling medium flow passage provided in the spaces that passes a cooling medium for cooling the chamber body.

Abstract: An ion source for improving beam transport efficiency regarding a ribbon beam is provided. The plasma generation container is formed with a beam extraction port at an end thereof. The shielding member plugs the beam extraction port and comprises three or more elongate holes each of which is long in a lateral direction of a ribbon beam to be extracted through the shielding member and which are arranged in the form of an array extending in the lateral direction, wherein a first length one of the elongate holes located in a central region of the array is shorter than a second length of one of the remaining elongate holes located on an end side of the array.

Abstract: An ion source is provided. The ion source includes a plasma generation container, an electron supply, an electromagnet and a shift means. The plasma generation container generates an ion beam to be extracted therefrom in an ion beam extraction direction. The electron supply supplies electrons into the plasma generation container. The electromagnet generates a magnetic field for capturing the electrons from the electron supply. The shift means shifts a center of the magnetic field in the ion beam extraction direction to change a rate of a desired type of ion to be contained in the ion beam.

Abstract: A beam current measuring device capable of performing measurement of a beam current distribution of a charged particle beam seamlessly and continuously in an arbitrary direction is provided. The beam current measuring device includes collector electrodes whose detection regions seamlessly continue in an arrangement direction thereof.

Abstract: A plasma source is provided. The plasma source includes a chamber body, a supply passage, a vacuum connector, an antenna, a first insulator, a second insulator, and a conductor. The chamber body has an opening for emitting ions or electrons. The supply passage penetrates through a first peripheral wall of the chamber body. The vacuum connector is provided in a second peripheral wall of the chamber body at a position opposed to the opening. The antenna has a base end connected to the vacuum connector, and extends inside the chamber body toward the opening. The first insulator covers a first region of the antenna at a distal end of the antenna inside the chamber body. The second insulator covers a second region of the antenna at the base end of the antenna inside the chamber body. The conductor covers the second insulator.

Abstract: A plasma source is provided. The plasma source includes a chamber body, a supply passage, a vacuum connector, an antenna, a first insulator, a second insulator, and a conductor. The chamber body has an opening for emitting ions or electrons. The supply passage penetrates through a first peripheral wall of the chamber body. The vacuum connector is provided in a second peripheral wall of the chamber body at a position opposed to the opening. The antenna has a base end connected to the vacuum connector, and extends inside the chamber body toward the opening. The first insulator covers a first region of the antenna at a distal end of the antenna inside the chamber body. The second insulator covers a second region of the antenna at the base end of the antenna inside the chamber body. The conductor covers the second insulator.

Abstract: A plasma generation system is provided that includes an elongated plasma chamber having a first elongated side wall substantially parallel to a longitudinal axis extending through the plasma chamber and a gas delivery device for delivering a gas to the plasma chamber via the first elongated side wall. The gas delivery device includes at least one input port for receiving a source of the gas and a plurality of output ports for delivering portions of the gas to the plasma chamber. The gas delivery device also includes a network of gas delivery paths comprising at least one branch point between the at least one input port and the plurality of output ports. The at least one branch point is directly connected to (i) an input node and (ii) at least two output nodes that are positioned offset from the branch point along the longitudinal axis.

Abstract: A plasma source is provided. The plasma source includes a chamber body inside which plasma is generated, a first mirror magnet, a second mirror magnet, and a cusp magnet provided around the chamber body and spaced apart in a axial direction thereof, each comprising permanent magnets radially spaced apart from each other to form spaces between adjacent permanent magnets thereof; and a cooling medium flow passage provided in the spaces that passes a cooling medium for cooling the chamber body.

Abstract: A semiconductor manufacturing apparatus, which is provided with a first storage chamber that stores a substrate to be processed, a second storage chamber that stores a dummy substrate, a substrate support apparatus with a heating function that supports a substrate, and a substrate transport apparatus that transports the substrates between the storage chambers and the substrate support apparatus, is further provided with a controller which, in the event that the temperature of substrate processing in a preceding substrate processing step is higher than the temperature of substrate processing in a subsequent substrate processing step, operates the substrate transport apparatus to transport the dummy substrate, whose temperature is lower than the temperature of substrate processing in the preceding substrate processing step, prior to carrying out the subsequent substrate processing step.

Abstract: An ion beam irradiation apparatus is provided. The apparatus includes an ion source, a mass separator, and an energy filter. The mass separator sorts dopant ions having a specific mass number and valence from an ion beam extracted from the ion source, and outputs the dopant ions. The energy filter is formed to define a beam passing region for allowing the ion beam to pass therethrough, and configured to have a given filter potential in response to application of a voltage thereto to separate passable ions capable of passing through the beam passing region and non-passable ions incapable of passing through the beam passing region, from each other by a difference in ion energy. The given filter potential is set such that the dopant ions are included in the passable ions, and a portion of unwanted ions which cannot be separated from the dopant ions by the mass separator are included in the non-passable ions.

Abstract: A heating device is provided. The heating device includes a conveyance member that conveys a substrate between a heating position and a non-heating position, a support member that is provided on the conveyance member and that supports the substrate, a heater provided at the heating position and operable to heat a first surface of the substrate, and a heat reflecting plate attached to the conveyance member in facing relation to a second surface of the substrate opposite to the first surface.

Abstract: A beam current measuring device capable of performing measurement of a beam current distribution of a charged particle beam seamlessly and continuously in an arbitrary direction is provided. The beam current measuring device includes collector electrodes whose detection regions seamlessly continue in an arrangement direction thereof.

Abstract: A plasma generator for an ion implanter is provided. The plasma generator includes an ionization chamber for forming a plasma that is adapted to generate a plurality of ions and a plurality of electrons. An interior surface of the ionization chamber is exposed to the plasma and constructed from a first non-metallic material. The plasma generator also includes a thermionic emitter including at least one surface exposed to the plasma. The thermionic emitter is constructed from a second non-metallic material. The plasma generator further includes an exit aperture for extracting at least one of the plurality of ions or the plurality of electrons from the ionization chamber to form at least one of an ion beam or an electron flux. The ion beam or the electron flux comprises substantially no metal. The first and second non-metallic materials can be the same or different from each other.

Abstract: A transport system is a vacuum processing system that includes a transport device that is provided in a vacuum, and a lubricating agent supply device that supplies lubricating agent to the transport device and provided in the ambient atmosphere. The transport device has a lubricating agent flow channel that is a channel for grease injected to a site subject to lubrication. The lubricating agent supply device has a grease server that stores a lubricating agent in the ambient atmosphere, a lubricating agent supply pipe which is a channel that guides the grease stored in the grease server to the lubricating agent flow channel and that connects the grease server and the lubricating agent flow channel, and an exhaust pump that exhausts the inside of the lubricating agent supply pipe.

Abstract: An ion beam irradiation apparatus is provided. The apparatus includes an ion source, a mass separator, and an energy filter. The mass separator sorts dopant ions having a specific mass number and valence from an ion beam extracted from the ion source, and outputs the dopant ions. The energy filter is formed to define a beam passing region for allowing the ion beam to pass therethrough, and configured to have a given filter potential in response to application of a voltage thereto to separate passable ions capable of passing through the beam passing region and non-passable ions incapable of passing through the beam passing region, from each other by a difference in ion energy. The given filter potential is set such that the dopant ions are included in the passable ions, and a portion of unwanted ions which cannot be separated from the dopant ions by the mass separator are included in the non-passable ions.

Abstract: A beam current density distribution adjustment device is provided. The device includes member pairs in a long side direction of a ribbon beam, the member pairs adjusting a beam current density distribution in the long side direction of the ribbon beam by using an electric field or a magnetic field, members of each of the member pairs being disposed with the ribbon beam in-between the members. Opposing surfaces of the member pairs adjacent to each other in the long side direction of the ribbon beam are partially not parallel to a traveling direction of the ribbon beam.

Abstract: A mass analyzing electromagnet is provided. The mass analyzing electromagnet includes an analysis tube having an internal zone formed as a passage for the ion beam; and a shield member mounted to an inner wall surface of the analyzing tube, a portion of the shield member intersecting with a direction perpendicular to a traveling direction of an ion beam and a mass-based separation direction of the ion beam so as to block a portion of the ion beam.

Abstract: A magnetic system for uniformly scanning an ion beam across a semiconductor wafer comprises a magnetic scanner having ac and dc coil windings each of which extend linearly along internal pole faces of a magnetic core. The ac and dc coil windings are mutually orthogonal; a time dependent magnetic component causes ion beam scanning while a substantially static (dc) field component allows the ion beam to be bent in an orthogonal plane. The current density in the ac and dc coil windings is uniformly dispersed along the pole faces leading to an improved beam spot uniformity at the wafer. The magnetic system also includes a collimator having first and second mutually opposed symmetrical dipoles defining an aperture between them. The poles of each dipole have a pole face varying monotonically and polynomially in a direction perpendicular to a central axis of the collimator: an increasing pole gap is formed towards that central axis.

Abstract: A substrate holding device is provided with an electrostatic chuck that has an electrode therein and is provided with a substrate holding surface, on one side of which a substrate is held; a displacement gauge that is disposed above or below the substrate holding surface; and a controller which, along with using the displacement gauge to measure a first distance to the substrate when a substrate is placed on the substrate holding surface, uses the displacement gauge to measure a second distance to the substrate after a predetermined voltage is applied to the electrode of the electrostatic chuck and, based on the difference between the measured distances, ascertains whether the clamping of the substrate to the electrostatic chuck has been performed in a normal manner.

Abstract: In one aspect, an ion implantation system is disclosed, which comprises a deceleration system configured to receive an ion beam and decelerate the ion beam at a deceleration ratio of at least 2, and an electrostatic bend disposed downstream of the deceleration system for causing a deflection of the ion beam. The electrostatic bend includes three tandem electrode pairs for receiving the decelerated beam, where each electrode pair has an inner and an outer electrode spaced apart to allow passage of the ion beam therethrough. Each of the electrodes of the end electrode pair is held at an electric potential less than an electric potential at which any of the electrodes of the middle electrode pair is held and the electrodes of the first electrode pair are held at a lower electric potential relative to the electrodes of the middle electrode pair.