Patents Assigned to Nonvolatile Electronics, Incorporated
  • Offset magnetoresistive memory structures
    Patent number: 5251170
    Abstract: A digital memory having a plurality of electrically connected bit structures extending over a path with adjacent ones offset from one another in a direction substantially perpendicular to that path. The bit structures are formed of two ferromagnetic films with an exchange coupling barrier therebetween.
    Type: Grant
    Filed: November 4, 1991
    Date of Patent: October 5, 1993
    Assignee: Nonvolatile Electronics, Incorporated
    Inventors: James M. Daughton, Arthur V. Pohm