Patents Assigned to Nova Measuring Instruments Inc.
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Publication number: 20210305037Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).Type: ApplicationFiled: February 1, 2021Publication date: September 30, 2021Applicant: NOVA MEASURING INSTRUMENTS INC.Inventors: David A. REED, Bruno W. SCHUELER, Bruce H. NEWCOME, Rodney SMEDT, Chris BEVIS
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Patent number: 11029148Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate.Type: GrantFiled: May 12, 2020Date of Patent: June 8, 2021Assignee: NOVA MEASURING INSTRUMENTS, INC.Inventors: Heath A. Pois, Wei Ti Lee, Lawrence V. Bot, Michael C. Kwan, Mark Klare, Charles Thomas Larson
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Patent number: 10910208Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).Type: GrantFiled: April 23, 2020Date of Patent: February 2, 2021Assignee: NOVA MEASURING INSTRUMENTS, INC.Inventors: David A. Reed, Bruno W. Schueler, Bruce H. Newcome, Rodney Smedt, Chris Bevis
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Patent number: 10859519Abstract: Methods and systems for measuring periodic structures using multi-angle X-ray reflectance scatterometry (XRS) are disclosed. For example, a method of measuring a sample by X-ray reflectance scatterometry involves impinging an incident X-ray beam on a sample having a periodic structure to generate a scattered X-ray beam, the incident X-ray beam simultaneously providing a plurality of incident angles and a plurality of azimuthal angles. The method also involves collecting at least a portion of the scattered X-ray beam.Type: GrantFiled: November 18, 2019Date of Patent: December 8, 2020Assignee: NOVA MEASURING INSTRUMENTS, INC.Inventors: Heath A. Pois, David A. Reed, Bruno W. Schueler, Rodney Smedt, Jeffrey T. Fanton
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Patent number: 10801978Abstract: XPS spectra are used to analyze and monitor various steps in the selective deposition process. A goodness of passivation value is derived to analyze and quantify the quality of the passivation step. A selectivity figure of merit value is derived to analyze and quantify the selectivity of the deposition process, especially for selective deposition in the presence of passivation. A ratio of the selectivity figure of merit to maximum selectivity value can also be used to characterize and monitor the deposition process.Type: GrantFiled: March 12, 2019Date of Patent: October 13, 2020Assignee: NOVA MEASURING INSTRUMENTS, INC.Inventors: Charles Thomas Larson, Kavita Shah, Wei Ti Lee
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Patent number: 10648802Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate.Type: GrantFiled: August 8, 2019Date of Patent: May 12, 2020Assignee: NOVA MEASURING INSTRUMENTS, INC.Inventors: Heath A. Pois, Wei Ti Lee, Lawrence V. Bot, Michael C. Kwan, Mark Klare, Charles Thomas Larson
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Patent number: 10636644Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).Type: GrantFiled: August 30, 2019Date of Patent: April 28, 2020Assignee: NOVA MEASURING INSTRUMENTS INC.Inventors: David A. Reed, Bruno W. Schueler, Bruce H. Newcome, Rodney Smedt, Chris Bevis
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Patent number: 10533961Abstract: Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).Type: GrantFiled: November 2, 2016Date of Patent: January 14, 2020Assignee: NOVA MEASURING INSTRUMENTS, INC.Inventors: Wei Ti Lee, Heath Pois, Mark Klare, Cornel Bozdog
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Patent number: 10481112Abstract: Methods and systems for measuring periodic structures using multi-angle X-ray reflectance scatterometry (XRS) are disclosed. For example, a method of measuring a sample by X-ray reflectance scatterometry involves impinging an incident X-ray beam on a sample having a periodic structure to generate a scattered X-ray beam, the incident X-ray beam simultaneously providing a plurality of incident angles and a plurality of azimuthal angles. The method also involves collecting at least a portion of the scattered X-ray beam.Type: GrantFiled: November 5, 2018Date of Patent: November 19, 2019Assignee: NOVA MEASURING INSTRUMENTS INC.Inventors: Heath A. Pois, David A. Reed, Bruno W. Schueler, Rodney Smedt, Jeffrey T. Fanton
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Patent number: 10403489Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass, spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).Type: GrantFiled: July 18, 2018Date of Patent: September 3, 2019Assignee: NOVA MEASURING INSTRUMENTS INC.Inventors: David A. Reed, Bruno W. Schueler, Bruce H. Newcome, Rodney Smedt, Chris Bevis
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Patent number: 10119925Abstract: Methods and systems for measuring periodic structures using multi-angle X-ray reflectance scatterometry (XRS) are disclosed. For example, a method of measuring a sample by X-ray reflectance scatterometry involves impinging an incident X-ray beam on a sample having a periodic structure to generate a scattered X-ray beam, the incident X-ray beam simultaneously providing a plurality of incident angles and a plurality of azimuthal angles. The method also involves collecting at least a portion of the scattered X-ray beam.Type: GrantFiled: March 6, 2017Date of Patent: November 6, 2018Assignee: Nova Measuring Instruments Inc.Inventors: Heath A. Pois, David A. Reed, Bruno W. Schueler, Rodney Smedt, Jeffrey T. Fanton
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Patent number: 10082390Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technolgies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. A thickness of the first layer is determined based on the first XPS and XRF intensity signals. The information for the first layer and for the substrate is combined to estimate an effective substrate. Second XPS and XRF intensity signals are measured for a sample having a second layer above the first layer above the substrate. The method also involves determining a thickness of the second layer based on the second XPS and XRF intensity signals, the thickness accounting for the effective substrate.Type: GrantFiled: June 19, 2015Date of Patent: September 25, 2018Assignee: NOVA MEASURING INSTRUMENTS INC.Inventors: Heath A. Pois, Wei Ti Lee, Lawrence V. Bot, Michael C. Kwan, Mark Klare, Charles Thomas Larson
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Patent number: 10056242Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).Type: GrantFiled: February 10, 2016Date of Patent: August 21, 2018Assignee: Nova Measuring Instruments Inc.Inventors: David A. Reed, Bruno W. Schueler, Bruce H. Newcome, Rodney Smedt, Chris Bevis
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Patent number: 9952166Abstract: Systems and approaches for silicon germanium thickness and composition determination using combined XPS and XRF technologies are described. In an example, a method for characterizing a silicon germanium film includes generating an X-ray beam. A sample is positioned in a pathway of said X-ray beam. An X-ray photoelectron spectroscopy (XPS) signal generated by bombarding said sample with said X-ray beam is collected. An X-ray fluorescence (XRF) signal generated by bombarding said sample with said X-ray beam is also collected. Thickness or composition, or both, of the silicon germanium film is determined from the XRF signal or the XPS signal, or both.Type: GrantFiled: March 9, 2017Date of Patent: April 24, 2018Assignee: Nova Measuring Instruments Inc.Inventors: Heath A. Pois, Wei Ti Lee