Abstract: A method and system are presented for monitoring a process sequentially applied to a stream of substantially identical articles by a processing tool, so as to terminate the operation of the processing tool upon detecting an end-point signal corresponding to a predetermined value of a desired parameter of the article being processed. The article is processed with the processing tool. Upon completing the processing in response to the end-point signal generated by an end-point detector continuously operating during the processing of the article, integrated monitoring is applied to the processed article to measure the value of the desired parameter. The measured value of the desired parameter is analyzed to determine a correction value thereof to be used for adjusting the end-point signal corresponding to the predetermined value of the desired parameter for terminating the processing of the next article in the stream.

Abstract: A method and system are presented for measuring in an electrically conductive film of a specific sample including data indicative of a free space response of an RF sensing coil unit to AC voltage applied to the RF sensing coil. The sensing coil is located proximate to the sample at a distance h substantially not exceeding 0.2 r wherein r is the coil radius; an AC voltage in a range from 100 MHz to a few GHz is applied to the sensing coil to cause generation of an eddy current passage through the conductive film; a response of the sensing coil to an effect of the electric current through the conductive film onto a magnetic field of the coil is detected and the measured data indicative of the response is generated. The thickness of the film is determined by utilizing the data indicative of the free space measurements to analyze the measured date. The method thus provides for measuring in conductive films with a sheet resistance Rs in a range from about 0.009 to about 2 Ohm/m2.

Abstract: An optical system is presented for use in a measurement system for measuring in patterned structures, which is particularly useful controlling processing of the structure progressing on a production line. The system comprises an illuminator unit producing illuminating light to be directed to the structure to produce returned light, a detector unit comprising an imaging detector and a spectrophotometer detector, and a light directing assembly. The light directing assembly defines first and second optical paths for the light propagation. The optical elements accommodated in the first optical path affect the light to provide a relatively small measuring area of the structure's plane. The second optical path is located outside the first optical path, the light propagation through the second optical path providing a relatively large measuring area, as compared to that of the first optical path.

Abstract: A method is presented for optical control of the quality of a process of chemical mechanical planarization (CMP) performed by a polishing tool applied to an article having a patterned area. The article contains a plurality of stacks each formed by a plurality of different layers, thereby defining a pattern in the form of spaced-apart metal regions. The method is capable of locating at least one of residues, erosion and dishing conditions on the article. At least one predetermined site on the article is selected for control. This at least one predetermined site is illuminated, and spectral characteristics of light components reflected from this location are detected. Data representative of the detected light components is analyzed for determining at least one parameter of the article within the at least one illuminated site.

Abstract: An optical measurement method and system are presented for imaging two target structures in two parallel layers, respectively, of a sample, to enable determination of a registration between the two target structures along two mutually perpendicular axes of the layer. The sample is illuminated with incident radiation to produce a radiation response of the sample. The radiation response is collected by an objective lens arrangement, and the collected radiation response is split into two spatially separated radiation components. The split radiation components are directed towards at least one imaging plane along different optical channels characterized by optical paths of different lengths, respectively. The two split radiation components are detected in said at least one imaging plane, and two image parts are thereby acquired, each image part containing images of the two target structures. This enables determination of the relative distance between the two target structures.

Abstract: Apparatus for processing substrates according to a predetermined photolithography process includes a loading station in which the substrates are loaded, a coating station in which the substrates are coated with a photoresist material, an exposing station in which the photoresist coating is exposed to light through a mask having a predetermined pattern to produce a latent image of the mask on the photoresist coating, a developing station in which the latent image is developed, an unloading station in which the substrates are unloaded and a monitoring station for monitoring the substrates with respect to predetermined parameters of said photolithography process before reaching the unloading station.

Abstract: An integrated apparatus for optically monitoring semiconductor workpieces includes a supporting assembly for supporting the workpiece, and an optical monitoring unit positioned opposite the surface of the workpiece and separated therefrom by an optical window. The optical monitoring unit is mounted for reciprocating movement within a plane parallel to the window for monitoring at least one desired parameter of the semiconductor workpiece and has pattern recognition and auto-focusing utilities. The optical window includes one or more relatively small window fragments located at predetermined locations to enable observation of desired, predetermined portions of the workpiece. The size and shape of the window fragments are selected according to the requirements of transparency in a predetermined spectral range, mechanical strength and ability of pattern recognition and auto-focusing.

Abstract: A method and system are presented for monitoring a process sequentially applied to a stream of substantially identical articles by a processing tool, so as to terminate the operation of the processing tool upon detecting an end-point signal corresponding to a predetermined value of a desired parameter of the article being processed. The article is processed with the processing tool. Upon completing the processing in response to the end-point signal generated by an end-point detector continuously operating during the processing of the article, integrated monitoring is applied to the processed article to measure the value of the desired parameter. The measured value of the desired parameter is analyzed to determine a correction value thereof to be used for adjusting the end-point signal corresponding to the predetermined value of the desired parameter for terminating the processing of the next article in the stream.

Abstract: An optical system is disclosed for the inspection of wafers during polishing which also includes a measurement system for measuring the thickness of the wafers top layer. The optical system views the wafer through a window and includes a gripping system, which places the wafer in a predetermined viewing location while maintaining the patterned surface completely under water. The optical system also includes a pull-down unit for pulling the measurement system slightly below the horizontal prior to the measurement and returns the measuring system to the horizontal afterwards.

Abstract: A measurement method and system configured to determine parameters of a structure during production, the system including: a stage configured to support the structure during measurements; a measuring unit coupled to the stage; and a processor coupled to the measuring unit. The measuring unit includes: an illumination system configured to direct incident light of substantially broad wavelengths band toward a surface of the structure during measurements; and a detection system coupled to the illumination system and configured to detect light propagating from the surface of the structure during measurements. The measuring unit is configured to generate one or more output signals in response to the detected light during measurements. The processor is configured to determine the parameters of the structure from the one or more output signals during measurements. The parameters include a critical dimension of the structure and a layer characteristic of the structure.

Abstract: The present invention relates to an integrated apparatus for monitoring wafers and for process control in the semiconductor manufacturing process, by means of at least two different measurements that can be installed inside any part of the semiconductor production line, i.e., inside the photocluster equipment, the CVD equipment or the CMP equipment. The apparatus comprises a measuring unit for performing at least one optical measurement in predetermined sites on said wafer, illumination sources for illuminating said wafer via measuring unit, supporting means for holding, rotating and translating the wafer and a control unit. The measuring unit comprises: at least two measuring sub-units, one of them being normal-incidence optical measuring system.

Abstract: A method and system are presented for inspecting a structure containing a pattern in the form of a surface relief fabricated by a pattern-creating tool applied to the structure. Reference data is provided being indicative of photometric intensities of light components of different wavelengths returned from a structure having a pattern similar to the pattern of the structure under inspection. Spectrophotometric measurements are continuously applied to successive locations within the surface relief on the structure so as to form a measurement slice thereon. Measured data in the form of a spectrum indicative of photometric intensities of light components of different wavelengths returned from the successive locations within the slice is detected and analyzed to determine whether it correlates with the reference data in accordance with predetermined criteria results.

Abstract: A method is presented for controlling a process to be applied to a patterned structure in a production run. Reference data is provided being representative of diffraction signatures corresponding to a group of different fields in a structure similar to the patterned structure in the production line, and of a control window for the process parameters corresponding to a signature representative of desired process results. The group of different fields is characterized by different process parameters used in the manufacture of these fields. The method utilizes an expert system trained to be responsive to input data representative of a diffraction signature to provide output data representative of corresponding effective parameters of the process. Optical measurements are applied to different sites on the patterned structure in the production line to obtain diffraction signatures of thereof and generate corresponding measured data.

Abstract: A method and system are presented for determing a line profile in a patterned structure, aimed at controlling a process of manufacture of the structure. The patterned structure comprises a plurality of different layers, the pattern in the structure being formed by patterned regions and un-patterned regions. At least first and second measurements are carried out, each utilizing illumination of the structure with a broad wavelengths band of incident light directed on the structure at a certain angle of incidence, detection of spectral characteristics of light returned from the structure, and generation of measured data representative thereof. The measured data obtained with the first measurement is analyzed, and at least one parameter of the structure is thereby determined. Then, this determined parameter is utilized, while analyzing the measured data obtained with the second measurements enabling the determination of the profile of the structure.

Abstract: A test structure is presented to be formed on a patterned structure and to be used for controlling a CMP process applied to the patterned structure, which has a pattern area formed by spaced-apart metal-containing regions representative of real features of the patterned structure. The test structure thus undergoes the same CMP processing as the pattern area. The test structure comprises at least two structures aligned along a vertical axis in a spaced-apart parallel relationship, each structure comprising at least one pattern zone containing spaced-apart metal regions, the test structure thereby comprising at least one pair of vertically aligned upper and lower pattern zones. The upper and lower pattern zones in each pair have different patterns oriented with respect to each other such that the metal regions of the lower pattern are located underneath the spaces between the metal regions of the upper pattern.

Abstract: A measurement method and system are presented for measuring parameters of a patterned structure. Scatterometry and SEM measurements are applied to the structure, measured data indicative of, respectively, the structure parameters and lateral pattern dimensions of the structure are generated. The entire measured data are analyzed so as to enable using measurement results of either one of the scatterometry and SEM measurements for optimizing the other measurement results.

Abstract: A method and measuring tool are presented for automatic control of photoresist-based processing of a workpiece progressing through a processing tool arrangement. Spectrophotometric measurements are applied to the workpiece prior to being processed, spectral characteristics of the workpiece are measured, thereby obtaining measured data indicative of at least one parameter of the workpiece that defines an optimal value of at least processing time parameter of the processing tool to be used in the processing of said workpiece to obtain certain process results. This data is analyzed to determine data indicative of the optimal value of said at least processing time parameter, and thereby enable calculation of a correction value to be applied to said processing time parameter prior to applying the processing tool to the workpiece.

Abstract: A processing unit for processing at least one semiconductor wafer includes a processing station for processing the wafer, a measuring station for measuring the at least one wafer, a robot for moving the wafer between the processing and measuring stations, a wafer handling system and a buffer station. The wafer handling system operates in conjunction with the measuring station and moves the wafer to and from a measuring location on the measuring unit. The buffer station is associated with the wafer handling system and receives measured and unmeasured wafers thereby to enable the robot to arrive at and leave the measuring station with at least one wafer thereon.

Abstract: An optical measurement method and system are presented for imaging two target structures in two parallel layers, respectively, of a sample, to enable determination of a registration between the two target structures along two mutually perpendicular axes of the layer. The sample is illuminated with incident radiation to produce a radiation response of the sample. The radiation response is collected by an objective lens arrangement, and the collected radiation response is split into two spatially separated radiation components. The split radiation components are directed towards at least one imaging plane along different optical channels characterized by optical paths of different lengths, respectively. The two split radiation components are detected in said at least one imaging plane, and two image parts are thereby acquired, each image part containing images of the two target structures. This enables determination of the relative distance between the two target structures.

Abstract: A method and system are presented for use in controlling a process of material removal from the surface of a patterned structure, by measuring at least one of residue, erosion, dishing and corrosion effects in the structure induced by this process. The structure is imaged utilizing phase modulation of light reflected from the structure, and a phase map of the structure is thereby obtained. This phase map is analyzed and data indicative of light reflective properties of layer stacks of the structure is utilized to determine a phase difference between light reflected from a selected measured site and at least one reference site spaced-apart from the selected site. The phase difference is thus indicative of the measured effect.