Abstract: A lens arrangement is presented. The lens arrangement comprises a first element having a concave reflective surface and defining an optical axis of the lens arrangement, and a second substantially flat and at least partially reflective element spaced-apart from the first element along the optical axis. The second element is configured to allow light passage therethrough and is oriented with respect to the optical axis and the first element such that at a predetermined angle of incidence of an input light beam onto the second element, the input light beam is reflected onto the reflective surface of the first element and reflected therefrom to pass through the second element.

Abstract: A system and method are presented for measurement on an article. The system comprises an illuminator for producing light of at least one predetermined wavelength range; an optical system; a displacement arrangement; and a control system. The optical system is configured to define at least a measurement channel, and comprises a light directing assembly for directing an input light beam, propagating along an input light path from the illuminator, onto the article and directing a light beam returned from the illuminated region of the article to at least one light detector. The displacement arrangement is associated with at least the light directing assembly of the optical system, and is configured and operable by the control system to rotate said at least light directing assembly of the optical system with respect to a stage supporting the article about a rotational axis substantially normal to the stage.

Abstract: The method for controlling layers alignment in a multi-layer sample (10), such a semiconductors wafer based on detecting a diffraction efficiency of radiation diffracted from the patterned structures (12, 14) located one above the other in two different layers of the sample.

Abstract: A method and system are presented for use in measuring/inspecting a patterned article. Optical measurements are applied to a measurement site on the article by illuminating the measurement site with a plurality of wavelengths at substantially normal incidence of the illuminating light, detecting light returned from the illuminated site, and generating measured data indicative thereof. The measurements are applied to the measurement site through a polarizer rotatable between its different orientations selected from a number of pre-calibrated orientations.

Abstract: A wafer monitoring system including a gripper operative to fixedly hold a wafer, a bottom buffering unit comprising at least one supporting element adapted to support a wafer, a top buffering unit comprising at least two supporting elements adapted to support a wafer, a first actuator operative to effect relative movement between at least two supporting elements of the top buffering unit, monitoring apparatus operative to perform processing steps on a wafer while the wafer is held fixed to the gripper, and an actuator operative to effect relative movement between the gripper and the top and bottom buffering units, the top and bottom buffering units being operative to buffer processed and unprocessed wafers thereby to enable a robot to arrive at and leave the monitoring apparatus with at least one wafer thereon.

Abstract: An apparatus is provided for supporting semiconductor wafer in a wafer processing system. The apparatus comprises at least two wafer support assemblies, defining respectively at least two wafer support levels and being mounted between opposing support beams; one or more supporting bases connected to or integral with each of the wafer support assemblies; and a motion unit coupled to the support beams.

Abstract: An imaging method and system are presented for detecting the topography of a sample surface. Illuminating light is directed to the sample by sequentially passing the illuminating light through a grating and an objective lens arrangement The grating has a pattern formed by spaced-apart transparent regions spaced by non-transparent regions, and is specifically oriented with respect to the optical axis of the objective lens arrangement. Light, specularly reflected from the sample, is collected by the same objective lens arrangement and is directed to an imaging detector through the same grating, thereby enabling creation of an image of the illuminated sample indicative of the topography of the sample surface.

Abstract: Abstract of the Disclosure An optical system is disclosed for the inspection of wafers during polishing which also includes a measurement system for measuring the thickness of the wafers top layer. The optical system views the wafer through a window and includes a gripping system, which places the wafer in a predetermined viewing location while maintaining the patterned surface completely under water.

Abstract: A method for measuring at least one desired parameter of a patterned structure having a plurality of features defined by a certain process of its manufacturing. The structure represents a grid having at least one cycle formed of at least two metal-containing regions spaced by substantially transparent regions with respect to incident light defining a waveguide. An optical model is provided, which is based on at least some of the features of the structure defined by a certain process of its manufacturing, and on the relation between a range of the wavelengths of incident radiation to be used for measurements and a space size between the two metal-containing regions in the grid cycle, and a skin depth of said metal. The model is capable of determining theoretical data representative of photometric intensities of light components of different wavelengths specularly reflected from the structure and of calculating said at least one desired parameter of the structure.

Abstract: A method and system are presented for use in controlling a process of material removal from the surface of a patterned structure, by measuring at least one of residue, erosion, dishing and corrosion effects in the structure induced by this process. The structure is imaged utilizing phase modulation of light reflected from the structure, and a phase map of the structure is thereby obtained. This phase map is analyzed and data indicative of light reflective properties of layer stacks of the structure is utilized to determine a phase difference between light reflected from a selected measured site and at least one reference site spaced-apart from the selected site. The phase difference is thus indicative of the measured effect.

Abstract: A method and system are presented for use in optical processing of an article by VUV radiation. The method comprises: localizing incident VUV radiation propagation from an optical head assembly towards a processing site on the article outside the optical head assembly and localizing reflected VUV radiation propagation from said processing site towards the optical head assembly by localizing a medium, non-absorbing with respect to VUV radiation, in within the light propagation path in the vicinity of said site outside the optical head assembly.

Abstract: An apparatus and a method are disclosed for measuring at least one desired parameter of a patterned structure having a plurality of features defined by a certain process of its manufacturing, wherein the structure represents a grid having at least one cycle formed of at least two metal-containing regions spaced by substantially transparent regions with respect to incident light defining a waveguide. The method utilizes an optical model based on at least some of the features of the structure defined by a certain process of its manufacturing, and is capable of determining theoretical data representative of photometric intensities of light components of different wavelengths specularly reflected from the structure and of calculating said at least one desired parameter of the structure.

Abstract: An apparatus is provided for supporting semiconductor wafer in a wafer processing system. The apparatus comprises at least two wafer support assemblies, defining respectively at least two wafer support levels and being mounted between opposing support beams; one or more supporting bases connected to or integral with each of the wafer support assemblies; and a motion unit coupled to the support beams.

Abstract: A method for in process monitoring of the parameters of a substrate undergoing a processing within a photolithography tools arrangement which includes substrate loading and unloading stations, and substrate coating, exposure and developing stations. The method includes the step of supplying the substrate after being developed to a monitoring station and analyzing the monitoring data to estimate the photolithography process to be used for controlling thereof.

Abstract: An apparatus and a method are disclosed for measuring at least one desired parameter of a patterned structure having a plurality of features defined by a certain process of its manufacturing, wherein the structure represents a grid having at least one cycle formed of at least two metal-containing regions spaced by substantially transparent regions with respect to incident light defining a waveguide. The method utilizes an optical model on at least some of the features of the structure defined by a certain process of its manufacturing, and is capable of determining theoretical data representative of photometric intensities of light components of different wavelengths specularly reflected from the structure and of calculating said at least one desired parameter of the structure.

Abstract: A processing apparatus is presented for applying to a substantially flat workpiece contained in a cassette, and a processing tool coupled to the housing. The processing tool is displaceable along three mutually perpendicular axes relative to the cassette for inserting the tool into the gap and moving the tool inside the gap relative to the workpiece. The processing apparatus can be utilized in chemical mechanical polishing arrangement, photolithography arrangement, and CVD arrangement.

Abstract: A method and system are presented for measuring in an electrically conductive film of a specific sample including data indicative of a free space response of an RF sensing coil unit to AC voltage applied to the RF sensing coil. The sensing coil is located proximate to the sample at a distance h substantially not exceeding 0.2 r wherein r is the coil radius; an AC voltage in a range from 100 MHz to a few GHz is applied to the sensing coil to cause generation of an eddy current passage through the conductive film; a response of the sensing coil to an effect of the electric current through the conductive film onto a magnetic field of the coil is detected and the measured data indicative of the response is generated. The thickness of the film is determined by utilizing the data indicative of the free space measurements to analyze the measured date. The method thus provides for measuring in conductive films with a sheet resistance Rs in a range from about 0.009 to about 2 Ohm/m2.

Abstract: An optical system is presented for use in a measurement system for measuring in patterned structures, which is particularly useful controlling processing of the structure progressing on a production line. The system comprises an illuminator unit producing illuminating light to be directed to the structure to produce returned light, a detector unit comprising an imaging detector and a spectrophotometer detector, and a light directing assembly. The light directing assembly defines first and second optical paths for the light propagation. The optical elements accommodated in the first optical path affect the light to provide a relatively small measuring area of the structure's plane. The second optical path is located outside the first optical path, the light propagation through the second optical path providing a relatively large measuring area, as compared to that of the first optical path.

Abstract: An optical measurement method and system are presented for imaging two target structures in two parallel layers, respectively, of a sample, to enable determination of a registration between the two target structures along two mutually perpendicular axes of the layer. The sample is illuminated with incident radiation to produce a radiation response of the sample. The radiation response is collected by an objective lens arrangement, and the collected radiation response is split into two spatially separated radiation components. The split radiation components are directed towards at least one imaging plane along different optical channels characterized by optical paths of different lengths, respectively. The two split radiation components are detected in said at least one imaging plane, and two image parts are thereby acquired, each image part containing images of the two target structures. This enables determination of the relative distance between the two target structures.

Abstract: A method is presented for optical control of the quality of a process of chemical mechanical planarization (CMP) performed by a polishing tool applied to an article having a patterned area. The article contains a plurality of stacks each formed by a plurality of different layers, thereby defining a pattern in the form of spaced-apart metal regions. The method is capable of locating at least one of residues, erosion and dishing conditions on the article. At least one predetermined site on the article is selected for control. This at least one predetermined site is illuminated, and spectral characteristics of light components reflected from this location are detected. Data representative of the detected light components is analyzed for determining at least one parameter of the article within the at least one illuminated site.