Abstract: An imaging method and system are presented for detecting the topography of a sample surface. Illuminating light is directed to the sample by sequentially passing the illuminating light through a grating and an objective lens arrangement The grating has a pattern formed by spaced-apart transparent regions spaced by non-transparent regions, and is specifically oriented with respect to the optical axis of the objective lens arrangement. Light, specularly reflected from the sample, is collected by the same objective lens arrangement and is directed to an imaging detector through the same grating, thereby enabling creation of an image of the illuminated sample indicative of the topography of the sample surface.

Abstract: A method and measuring tool are presented for automatic control of photoresist-based processing of a workpiece progressing through a processing tool arrangement. Spectrophotometric measurements are applied to the workpiece prior to being processed, spectral characteristics of the workpiece are measured, thereby obtaining measured data indicative of at least one parameter of the workpiece that defines an optimal value of at least processing time parameter of the processing tool to be used in the processing of said workpiece to obtain certain process results. This data is analyzed to determine data indicative of the optimal value of said at least processing time parameter, and thereby enable calculation of a correction value to be applied to said processing time parameter prior to applying the processing tool to the workpiece.

Abstract: A method for measuring at least one desired parameter of a patterned structure having a plurality of features defined by a certain process of its manufacturing. The structure represents a grid having at least one cycle formed of at least two locally adjacent elements having different optical properties in respect of incident radiation. An optical model is provided, which is based on at least some of the features of the structure defined by a certain process of its manufacturing, and on the relation between a range of the wavelengths of incident radiation to be used for measurements and a pitch of the structure under measurements. The model is capable of determining theoretical data representative of photometric intensities of light components of different wavelengths specularly reflected from the structure and of calculating said at least one desired parameter of the structure.

Abstract: The present invention relates to an integrated apparatus for monitoring wafers and for process control in the semiconductor manufacturing process, by means of optical measurements at more than one spectral range that can be installed inside any part of the semiconductor production line, i.e., inside the photocluster equipment, the CVD equipment or the CMP equipment. The apparatus comprises a measuring unit (110) for performing optical measurements in predetermined sites on said wafer, illumination sources for illuminating said wafer via measuring unit (10,50), supporting means (30) for holding, rotating and translating the wafer and a control unit (120). The measuring unit (110) comprises: (a) at least two separate optical units, each operating at a different distinct spectral range; (b) a separate optical window for each optical unit (31, 32); (c) at least one movable optical head (34); (d) mechanical means for translating said optical head relatively to the wafer's surface.

Abstract: A method and a system are presented for automatic optical control of at least one working parameter of a processing tool to be applied to a working area of a workpiece for providing certain process results. The at least one working parameter of the processing tool affects at least one parameter of the workpiece under processing. The processing tool has a preset value of the at least one working parameter prior to the processing of the workpiece. A measuring tool is applied to the workpiece prior to its processing by the processing tool for measuring the at least one parameter of the workpiece and generating measured data representative thereof. The measured data is analyzed with respect to the preset value of the working parameter and to the process results, so as to determine whether the preset value should be corrected for providing the certain process results when applying the processing tool to said workpiece. Upon detecting that the preset value should be corrected, calculating a correction value.

Abstract: An optical inspection system is presented, aimed at detecting defects on a substantially flat workpiece having an axis of symmetry. The workpiece is supported on a stage so as to be in an inspection plane, the stage being mounted for rotation in a plane parallel to the inspection plane. A scanning apparatus is accommodated above the workpiece, and comprises an illumination assembly, a plurality of optical assemblies, and a plurality of area sensors. The illumination assembly produces a plurality of incident radiation components for illuminating a strip on the workpiece extending parallel to the axis symmetry between two opposite sides thereof. The optical assemblies are aligned along the axis of symmetry in a spaced-apart parallel relationship, and are mounted for reciprocating movement within a plane parallel to an inspection area that covers substantially a half of the workpiece.

Abstract: A positioning assembly is presented for positioning a substantially disk-shaped workpiece in a registered position. The positioning assembly comprises spaced-apart guiding members defining a common support plane for supporting the workpiece, such that they engage the circumference of the workpiece at spaced-apart locations. Each guiding member is mounted for pivotal movement in the support plane between its two extreme positions. The movements of the guiding members transport the workpiece towards the registered position.

Abstract: An optical system is disclosed for the inspection of wafers during polishing which also includes a measurement system for measuring the thickness of the wafer's top layer. The optical system views the wafer through a window and includes a gripping system, which places the wafer in a predetermined viewing location while maintaining the patterned surface completely under water. The optical system also includes a pull-down unit for pulling the measurement system slightly below the horizontal prior to the measurement and returns the measuring system to the horizontal afterwards.

Abstract: A monitoring tool for monitoring an article in a wet environment, the monitoring tool including a monitoring station having an optical unit, a liquid holding unit for receiving the article, and a window, through which at least a portion of the article is viewable by the optical unit, a buffer station associated with the monitoring station having a plurality of supporting assemblies for receiving the article before and after being monitored, wherein at least one of the supporting assemblies includes a liquid receptacle for holding the article therein, and a gripping unit operating in conjunction with the monitoring station for moving the article from the buffer station to the liquid holding unit of the monitoring station.

Abstract: A test structure is presented to be formed on a patterned structure and to be used for controlling a CMP process applied to the patterned structure, which has a pattern area formed by spaced-apart metal-containing regions representative of real features of the patterned structure. The test structure thus undergoes the same CMP processing as the pattern area. The test structure comprises at least two structures aligned along a vertical axis in a spaced-apart parallel relationship, each structure comprising at least one pattern zone containing spaced-apart metal regions, the test structure thereby comprising at least one pair of vertically aligned upper and lower pattern zones. The upper and lower pattern zones in each pair have different patterns oriented with respect to each other such that the metal regions of the lower pattern are located underneath the spaces between the metal regions of the upper pattern.

Abstract: A method is presented for optical control of the quality of a process of chemical mechanical planarization (CMP) performed by a polishing tool applied to an article having a patterned area. The article contains a plurality of stacks each formed by a plurality of different layers, thereby defining a pattern in the form of spaced-apart metal regions. The method is capable of locating at least one of residues, erosion and dishing conditions on the article. At least one predetermined site on the article is selected for control. This at least one predetermined site is illuminated, and spectral characteristics of light components reflected from this location are detected. Data representative of the detected light components is analyzed for determining at least one parameter of the article within the at least one illuminated site.

Abstract: A method for measuring at least one desired parameter of a patterned structure having a plurality of features defined by a certain process of its manufacturing. The structure represents a grid having at least one cycle formed of at least two locally adjacent elements having different optical properties in respect of an incident radiation. An optical model, based on at lease some of the features of the structure is provided. The model is capable of determining theoretical data representative of photometric intensities of light components of different wavelengths specularly reflected from the structure and of calculating said at least one desired parameter of the structure. A measurement area, which is substantially larger than a surface area of the structure defined by the grid cycle, is illuminated by an incident radiation of a preset substantially wide wavelength range.

Abstract: A test structure is presented to be formed on a patterned structure and to be used for controlling a CMP process applied to the patterned structure, which has a pattern area formed by spaced-apart metal-containing regions representative of real features of the patterned structure. The test structure thus undergoes the same CMP processing as the pattern area. The test structure comprises at least one pattern zone in the form of a metal area with at least one region included in the metal area and made of a material relatively transparent with respect to incident light, as compared to that of the metal.

Abstract: A processing unit for processing at least one semiconductor wafer includes a processing station for processing the wafer, a measuring station for measuring the at least one water, a robot for moving the wafer between the processing and measuring stations, a wafer handling system and a buffer station. The wafer handling system operates in conjunction with the measuring station and moves the wafer to and from a measuring location on the measuring unit. The buffer station is associated with the wafer handling system and receives measured and unmeasured wafers thereby to enable the robot to arrive at and leave the measuring station with at least one wafer thereon.

Abstract: Apparatus for processing substrates according to a predetermined photolithography process includes a loading station in which the substrates are loaded, a coating station in which the substrates are coated with a photoresist material, an exposing station in which the photoresist coating is exposed to light through a mask having a predetermined pattern to produce a latent image of the mask on the photoresist coating, a developing station in which the latent image is developed, an unloading station in which the substrates are unloaded and a monitoring station for monitoring the substrates with respect to predetermined parameters of said photolithography process before reaching the unloading station.

Abstract: A method for measuring at least one desired parameter of a patterned structure having a plurality of features defined by a certain process of its manufacturing. The structure represents a grid having at least one cycle formed of at least two locally adjacent elements having different optical properties in respect of an incident radiation. An optical model, based on at least some of the features of the structure is provided. The model is capable of determining theoretical data representative of photometric intensities of light components of different wavelengths specularly reflected from the structure and of calculating said at least one desired parameter of the structure. A measurement area, which is substantially larger than a surface area of the structure defined by the grid cycle, is illuminated by an incident radiation of a preset substantially wide wavelength range.

Abstract: An optical system is disclosed for the inspection of wafers during polishing which also includes a measurement system for measuring the thickness of the wafer's top layer. The optical system views the wafer through a window and includes a gripping system, which places the wafer in a predetermined viewing location while maintaining the patterned surface completely under water. The optical system also includes a pull-down unit for pulling the measurement system slightly below the horizontal prior to the measurement and returns the measuring system to the horizontal afterwards.

Abstract: A semiconductor production tool which provides alignment of a wafer at a fab station thereof includes an optical system, a wafer translation mechanism, a field of view translation unit and a unit for determining alignment. The optical system has a field of view which views the wafer. The wafer translation mechanism at least brings the wafer to a predetermined measurement location. In the present invention, the field of view translation unit translates the field of view relative to the wafer so as to view at least a portion of an edge of the wafer during an alignment operation. The unit for determining alignment is operative during the alignment operation and determines the alignment of the wafer from images produced by the optical system when the optical system views at least a portion of the marker.

Abstract: An optical system is disclosed for the inspection of wafers during polishing which also includes a measurement system for measuring the thickness of the wafer's top layer. The optical system views the wafer through a window and includes a gripping system, which places the wafer in a predetermined viewing location while maintaining the patterned surface completely under water. The optical system also includes a pull-down unit for pulling the measurement system slightly below the horizontal prior to the measurement and returns the measuring system to the horizontal afterwards.

Abstract: The present invention provides a method for determining a location on an object without prealignment and for positioning an object, such as a semiconductor, which has an array of generally perpendicular grid lines on its surface and a plurality of directional features. According to one embodiment the method determines the directions for the grid lines relative to the direction of a reference coordinate system, detects a grid junction and detects a direction of a reference coordinate system, detects a grid junction and detects a direction of one of the plurality of directional features, thereby providing a location of the grid junction in the reference coordinate system.