Abstract: The present invention deposits a conductive material from an electrolyte solution to a predetermined area of a wafer. The steps that are used when making this application include applying the conductive material to the predetermined area of the wafer using an electrolyte solution disposed on a surface of the wafer, when the wafer is disposed between a cathode and an anode, and preventing accumulation of the conductive material to areas other than the predetermine area by mechanically polishing the other areas while the conductive material is being applied.

Abstract: The present invention relates to a containment chamber that is used for carrying out multiple processing steps such as depositing on, polishing, etching, modifying, rinsing, cleaning, and drying a surface on the workpiece. In one example of the present invention, the chamber is used to electro chemically mechanically deposit a conductive material on a semiconductor wafer. The same containment chamber can then be used to rinse and clean the same wafer. As a result, the present invention eliminates the need for separate processing stations for depositing the conductive material and cleaning the wafer. Thus, with the present invention, costs and physical space are reduced while providing an efficient apparatus and method for carrying out multiple processes on the wafer surface using a containment chamber.

Abstract: The present invention relates to a process for forming a near-planar or planar layer of a conducting material, such as copper, on a surface of a workpiece using an ECMPR technique. The process preferably uses at least two separate plating solution chemistries to form a near-planar or planar copper layer on a semiconductor substrate that has features or cavities on its surface.

Abstract: The present invention provides method of adjusting a thickness profile of a top metal layer of a workpiece using a processing solution. A thickness profile control member is included that has at least first and second regions that will allow for processing at respective first and second rates that are different from each other. When processing the workpiece, the processing system establishes relative lateral movement between the workpiece and the thickness profile control member so that a certain portion of the workpiece is disposed in locations that correspond to the first and second regions at different points in time during the processing. In a preferred aspect, the lateral movement is controlled as a result of data obtained from sensors relating to the thickness of a removed or deposited layer.

Abstract: An apparatus for polishing a workpiece includes a workpiece holder configured to hold the workpiece, a polishing member configured to be positioned adjacent to a face of the workpiece in order to polish the workpiece face with a front side of the polishing member, and a platen having a plurality of pressure zones configured to selectively apply pressure to the polishing member thereby causing the polishing member to contact the workpiece face with selective pressure. In another embodiment, the apparatus includes a pressure controller coupled to the platen and configured to selectively adjust the pressure zones.

Abstract: The present invention relates to methods and apparatus for plating a conductive material on a substrate surface in a highly desirable manner. The invention removes at least one additive adsorbed on the top portion of the workpiece more than at least one additive disposed on a cavity portion, using an indirect external influence, thereby allowing plating of the conductive material take place before the additive fully re-adsorbs onto the top portion, thus causing greater plating of the cavity portion relative to the top portion.

Abstract: The present invention provides a wafer carrier that includes an opening, which in one embodiment is a plurality of holes, disposed along the periphery of the wafer carrier. A gas emitted through the holes onto a peripheral back edge of the wafer assists in preventing the processing liquids and contaminants resulting therefrom from reaching the inner region of the base and the backside inner region of the wafer. In another embodiment, a plurality of concentric sealing members are used to prove a better seal, and the outer seal is preferably independently movable to allow cleaning of a peripheral backside of the wafer to occur while the wafer is still attached to the wafer carrier.

Abstract: Deposition of conductive material on or removal of conductive material from a workpiece frontal side of a semiconductor workpiece is performed by providing an anode having an anode area which is to face the workpiece frontal side, and electrically connecting the workpiece frontal side with at least one electrical contact, outside of the anode area, by pushing the electrical contact and the workpiece frontal side into proximity with each other. A potential is applied between the anode and the electrical contact, and the workpiece is moved with respect to the anode and the electrical contact. Full-face electroplating or electropolishing over the workpiece frontal side surface, in its entirety, is thus permitted.

Abstract: A system for optionally depositing or etching a layer of a wafer includes mask plate opposed to the wafer with the mask plate having a plurality of openings that transport a solution to the wafer. An electrode assembly has a first electrode member and a second electrode member having channels that operatively interface a peripheral and center part of the wafer. The channels transport the solution to the mask.

Abstract: Abstract of the Disclosure A system for electrochemical mechanical polishing of a conductive surface of a wafer is provided. The system includes a wafer holder to hold the wafer and a belt pad disposed proximate to the wafer to polish the conductive surface. Application of a potential difference between conductive surface and an electrode and establishing relative motion between the belt pad and the conductive surface result in material removal from the conductive surface. Electrical contact to the surface is provided through either contacts embedded in the belt pad or contacts placed adjacent the belt pad.

Abstract: The present invention provides a method and apparatus for plating a conductive material to a substrate and also modifying the physical properties of a conductive film while the substrate is being plated. The present invention further provides a method and apparatus that plates a conductive material on a workpiece surface in a “proximity” plating manner while a pad type material or other fixed feature is making contact with the workpiece surface in a “cold worked” manner. In this manner, energy stored in the cold worked regions of the plated layer is used to accelerate and enhance micro-structural recovery and growth. Thus, large grain size is obtained in the plated material at a lower annealing temperature and a shorter annealing time.

Abstract: The present invention provides an edge cleaning system and method in which a directed stream of a mild etching solution is supplied to an edge area of a rotating workpiece, including the front surface edge and bevel, while a potential difference between the workpiece and the directed stream is maintained. In one aspect, the present invention provides an edge cleaning system that is disposed in the same processing chamber that is used for deposition or removal processing of the workpiece. In another aspect, the mild etching solution used for edge removal is also used to clean the front surface of the wafer, either simultaneously with or sequentially with the edge removal process.

Abstract: An apparatus which can control thickness uniformity during deposition of conductive material from an electrolyte onto a surface of a semiconductor substrate is provided. The apparatus has an anode which can be contacted by the electrolyte during deposition of the conductive material, a cathode assembly including a carrier adapted to carry the substrate for movement during deposition, and a conductive element permitting electrolyte flow therethrough. A mask lies over the conductive element and has openings permitting electrolyte flow. The openings define active regions of the conductive element by which a rate of conductive material deposition onto the surface can be varied. A power source can provide a potential between the anode and the cathode assembly so as to produce the deposition. A deposition process is also disclosed, and uniform electroetching of conductive material on the semiconductor substrate surface can additionally be performed.

Abstract: The present invention applies an electrochemical etching solution to a material layer, preferably a metal layer, disposed on a workpiece, in the presence of a current. This electrochemical etching solution supplies to the material on the substrate surface the species to form an intermediate compound on the surface that can be more easily mechanically removed as intermediate compound fragments than the material. By removing the intermediate compound fragments, the process allows more efficient use of the supplied current to form another layer of intermediate compound that can also be mechanically removed, rather than using the current to result in another compound on the surface of the material that eventually dissolves into the solution. In another aspect of the invention, such intermediate compound particulates are externally generated and used to mechanically remove the surface layer of the material.

Abstract: A process for forming a conductive structure on a substrate is provided. The substrate has a copper seed layer that is partially exposed through a plurality of openings in a masking layer such as a photoresist. The masking layer is formed on the seed layer. The process electroplates copper through the openings and onto the seed layer. During the copper electroplating process the surface of the masking layer is mechanically swept. The process forms planar conductive material deposits filling the plurality of holes in the masking layer. The upper ends of the conductive deposits are substantially co-planar.

Abstract: An apparatus which can control thickness uniformity during deposition of conductive material from an electrolyte onto a surface of a semiconductor substrate is provided. The apparatus has an anode which can be contacted by the electrolyte during deposition of the conductive material, a cathode assembly including a carrier adapted to carry the substrate for movement during deposition, and a conductive element permitting electrolyte flow therethrough. A mask lies over the conductive element and has openings permitting electrolyte flow. The openings define active regions of the conductive element by which a rate of conductive material deposition onto the surface can be varied. A power source can provide a potential between the anode and the cathode assembly so as to produce the deposition. A deposition process is also disclosed, and uniform electroetching of conductive material on the semiconductor substrate surface can additionally be performed.

Abstract: The present invention provides a method and apparatus that plates/deposits a conductive material on a semiconductor substrate and then polishes the same substrate. This is achieved by providing multiple chambers in a single apparatus, where one chamber can be used for plating/depositing the conductive material and another chamber can be used for polishing the semiconductor substrate. The plating/depositing process can be performed using brush plating or electro chemical mechanical deposition and the polishing process can be performed using electropolishing or chemical mechanical polishing. The present invention further provides a method and apparatus for intermittently applying the conductive material to the semiconductor substrate and also intermittently polishing the substrate when such conductive material is not being applied to the substrate.

Abstract: An anode assembly by which a solution can be supplied to a surface of a semiconductor substrate includes a housing defining an internal housing volume into which the solution can flow. A closure is provided for the internal housing volume, and the solution can be discharged from the internal housing volume through the closure towards the surface of the semiconductor substrate. A filter divides the internal housing volume into a first chamber and a second chamber located between the first chamber and the closure. During supply of the solution to the surface, a flow of the solution into the second chamber occurs at a higher rate than a flow of the solution into the first chamber, and the flows are blended in the second chamber.

Abstract: Systems and methods to operate upon a nonplanar top surface of a conductive surface layer of a workpiece, so as to, for example, preserve the structural integrity of a dielectric film layer disposed below the conductive surface layer, are presented. According to an exemplary method, a layer of conducting material such as a conducting paste is applied over the nonplanar top surface of the conductive surface layer to obtain a planar top surface. At least a portion of the conducting material layer and at least a portion of the conductive surface layer are removed in a planar manner to at least partially planarize the nonplanar top surface. The conducting material layer may be annealed so that the conducting material layer diffuses with the conductive surface layer prior to removal of at least the portions of conducting material layer and the conductive surface layer.

Abstract: The present invention provides at least one nozzle that sprays a rotating workpiece with an etchant at an edge thereof. The at least one nozzle is located in an upper chamber of a vertically configured processing subsystem that also includes mechanisms for plating, cleaning and drying in upper and lower chambers.