Abstract: A particular anode assembly can be used to supply a solution for any of a plating operation, a planarization operation, and a plating and planarization operation to be performed on a semiconductor wafer. The anode assembly includes a rotatable shaft disposed within a chamber in which the operation is performed, an anode housing connected to the shaft, and a porous pad support plate attached to the anode housing. The support plate has a top surface adapted to support a pad which is to face the wafer, and, together with the anode housing, defines an anode cavity. A consumable anode may be provided in the anode cavity to provide plating material to the solution. A solution delivery structure by which the solution can be delivered to said anode cavity is also provided. The solution delivery structure may be contained within the chamber in which the operation is performed. A shield can also be mounted between the shaft and an associated spindle to prevent leakage of the solution from the chamber.

Abstract: A semiconductor workpiece processing tool includes process modules having a robot loading window and a manual loading window, and a control system for managing a production route defining movement of the workpiece among a number of the process modules. The control system includes a user interface through which an operator can define the production route and recipes to be performed on the workpiece in each of the process modules, a system controller for controlling execution of the production route, a process module controller associated with each of the process modules for controlling the processing of the workpiece in the process module, and a network connecting the control system components. Advantages of the invention include the ability to continue a production route while manually operating a process module. As a result, the tool may continue in operation while selected process module are tested, maintained or otherwise used to process workpieces.

Abstract: The methods and systems described provide for an in-situ endpoint detection for material removal processes such as chemical mechanical polishing (CMP) performed on a workpiece. In a preferred embodiment, an optical detection system is used to detect endpoint during the removal of planar conductive layers using CMP. An optically transparent polishing belt provides endpoint detection through any spot on the polishing belt. Once endpoint is detected, a signal can be used to terminate or alter a CMP process that has been previously initiated.

Abstract: The present invention uses some type of inflatable membrane during processing to establish a vacuum and/or provide a resilient cushion on which the backside of the wafer can rest. In one aspect, the present invention provides an outer vacuum that allow for attachment of the wafer to the carrier head during processing, and also provides an inner inflatable membrane that provides a resilient cushion on which the backside of the wafer can rest during processing. In other aspects, the present invention provides a membrane that is displaceable with a vacuum within certain cavity regions to provide for attachment of the wafer to the wafer carrier.

Abstract: An anode assembly by which a solution can be supplied to a surface of a semiconductor substrate includes a housing defining an internal housing volume into which the solution can flow. A closure is provided for the internal housing volume, and the solution can be discharged from the internal housing volume through the closure towards the surface of the semiconductor substrate. A filter divides the internal housing volume into a first chamber and a second chamber located between the first chamber and the closure. During supply of the solution to the surface, a flow of the solution into the second chamber occurs at a higher rate than a flow of the solution into the first chamber, and the flows are blended in the second chamber.

Abstract: The present invention is directed to a method and apparatus for simultaneously cleaning and annealing a plated semiconductor workpiece. A chamber for simultaneously cleaning and annealing a semiconductor workpiece is provided herein. The method according to the present invention includes the steps rinsing the workpiece with mineral acids and DI water, then simultaneously cleaning/annealing the workpiece with heated deoxygenated DI water. By this present method, tool cross contamination by way of plated metal is greatly reduced, and also grain recovery and grain growth at room temperature is greatly accelerated. Thus, the annealing time of grain growth is dramatically reduced using the present method and apparatus.

Abstract: The present invention deposits a conductive material from an electrolyte solution to a predetermined area of a wafer. The steps that are used when making this application include applying the conductive material to the predetermined area of the wafer using an electrolyte solution disposed on a surface of the wafer, when the wafer is disposed between a cathode and an anode, and preventing accumulation of the conductive material to areas other than the predetermined area by mechanically polishing the other areas while the conductive material is being applied.

Abstract: The present invention relates to methods and apparatus for plating a conductive material on a semiconductor substrate by rotating pad or blade type objects in close proximity to the substrate, thereby eliminating/reducing dishing and voids. This is achieved by providing pad or blade type objects mounted on cylindrical anodes or rollers and applying the conductive material to the substrate using the electrolyte solution disposed on or through the pads, or on the blades. In one embodiment of the invention, the pad or blade type objects are mounted on the cylindrical anodes and rotated about a first axis while the workpiece may be stationary or rotate about a second axis, and metal from the electrolyte solution is deposited on the workpiece when a potential difference is applied between the workpiece and the anode. In another embodiment of the present invention, the plating apparatus includes an anode plate spaced apart from the cathode workpiece.

Abstract: Systems and methods to remove a first material located on a top surface of a workpiece are presented according to one aspect of the present invention. According to an exemplary method, the pad including a second material is positioned proximate to the workpiece so that a front surface of the pad contacts an exposed surface of the first material. The front surface of the pad is mechanically moved against the exposed surface of the first material to initiate a chemical reaction between the first material and the second material that yields a reaction product. The reaction product may be removed by using a chemical solution, by using the mechanical movement of the pad against the exposed surface of the first material or both.

Abstract: Described is a method and apparatus for producing bi-directional linear polishing that uses a flexible pad. In one aspect, a horizontal drive assembly moves a horizontal slide member that is horizontally moveable over rails attached to a single casting. Openings within the casting exist for the inclusion of the supply spool, the receive spool and the pad path rollers. A drive assembly translates the rotational movement of a motor into the horizontal bi-directional linear movement of the horizontal slide member. With the polishing pad properly locked in position, preferably being attached between a supply spool and the receive spool, horizontal bi-directional linear movement of the horizontal slide member creates a corresponding horizontal bi-directional linear movement of a portion of the polishing pad.

Abstract: The present invention relates to methods and apparatus for plating a conductive material on a semiconductor substrate by rotating pad or blade type objects in close proximity to the substrate, thereby eliminating/reducing dishing and voids. This is achieved by providing pad or blade type objects mounted on cylindrical anodes or rollers and applying the conductive material to the substrate using the electrolyte solution disposed on or through the pads, or on the blades. In one embodiment of the invention, the pad or blade type objects are mounted on the cylindrical anodes and rotated about a first axis while the workpiece may be stationary or rotate about a second axis, and metal from the electrolyte solution is deposited on the workpiece when a potential difference is applied between the workpiece and the anode. In another embodiment of the present invention, the plating apparatus includes an anode plate spaced apart from the cathode workpiece.

Abstract: A work piece carrier head can carry a semiconductor wafer during both plating and polishing operations. The carrier head includes a first component secured to a shaft by which the carrier head can be rotated, translated, and moved up and down, a second component connected to the first component and movable by fluid pressure relative to the first component between retracted and extended positions, and a third component connected to the first and second components for up and down movement between wafer loading or unloading and wafer plating or polishing positions. The third carrier head component includes a contact element by which electrical contact with the wafer is provided to permit wafer plating.

Abstract: A system for depositing materials on a surface of a wafer or removing materials from the surface of a wafer includes an electrode, a shaping plate, a liquid solution contained between the electrode and the wafer surface, and electrical contact members contacting selected locations on the wafer surface. The shaping plate is supported between the electrode and the wafer surface such that an upper surface of the shaping plate faces the wafer surface. The shaping plate can have a plurality of channels where each puts the wafer surface in a fluid communication with the electrode. The electrical contact members contact the selected locations on the wafer surface through a recessed edge of the shaping plate such that when the wafer is rotated, the selected contact locations move over the shaping plate and are plated under an applied potential. Advantages of the invention include substantially full surface treatment of the wafer.

Abstract: The present invention includes a polishing pad or belt secured to a mechanism that allows the pad or belt to move in a reciprocating manner, i.e. in both forward and reverse directions, at high speeds. The constant bidirectional movement of the polishing pad or belt as it polishes the wafer provides superior planarity and uniformity across the wafer surface. When a fresh portion of the pad is required, the pad is moved through a drive system containing rollers, such that the rollers only touch a back side of the pad, thereby minimizing sources of friction other than the wafer that is being polished from the polishing side of the pad, and maximizing the lifetime of the polishing pad.

Abstract: The present invention describes a chemical mechanical polishing apparatus and method that uses a portion of a polishing pad that is disposed under tension between a supply spool and a receive spool, with a motor providing the tension to either the supply spool or the receive spool and the other spool being locked during processing. If a new section of the polishing pad is needed, the same motor that provided the tension is used to advance the polishing pad a determined amount. Further, during processing, a feedback mechanism is used to ensure that the tension of the polishing pad is consistently maintained.

Abstract: The present invention relates to methods for repairing defects on a semiconductor substrate. This is accomplished by selectively depositing the conductive material in defective portions in the cavities while removing residual portions from the field regions of the substrate. Another method according to the present invention includes forming a uniform conductive material overburden on a top surface of the substrate. The present invention also discloses a method for depositing a second conductive material on the first conductive material of the substrate.

Abstract: The present invention provides apparatus and methods for detecting removal of a material in a chemical mechanical polishing process that uses a solution and operates upon a top layer made of a material that is disposed over another layer on a multi-layer workpiece. When the top layer from the workpiece is removed using chemical mechanical polishing with the solution, a flow of used solution results, with the flow of used solution containing therein the material removed from the top layer. While removing the top layer, a beam of light is transmitted on the flow of used solution to obtain an output beam of light that is altered due to absorption by the material, and a change in a characteristic of the output beam of light from the beam of light indicative of a change in an amount of the material within the flow of used solution is detected.

Abstract: The present invention relates to methods and apparatus for plating a conductive material on a substrate surface in a highly desirable manner. The invention removes at least one additive adsorbed on the top portion of the workpiece more than at least one additive disposed on a cavity portion, thereby allowing plating of the conductive material take place before the additive fully re-adsorbs onto the top portion and causing greater plating of the cavity portion relative to the top portion.

Abstract: Substantially uniform deposition of conductive material on a surface of a substrate, which substrate includes a semiconductor wafer, from an electrolyte containing the conductive material can be provided by way of a particular device which includes first and second conductive elements. The first conductive element can have multiple electrical contacts, of identical or different configurations, or may be in the form of a conductive pad, and can contact or otherwise electrically interconnect with the substrate surface over substantially all of the substrate surface. Upon application of a potential between the first and second conductive elements while the electrolyte makes physical contact with the substrate surface and the second conductive element, the conductive material is deposited on the substrate surface. It is possible to reverse the polarity of the voltage applied between the anode and the cathode so that electro-etching of deposited conductive material can be performed.

Abstract: Deposition of conductive material on or removal of conductive material from a wafer frontal side of a semiconductor wafer is performed by providing an anode having an anode area which is to face the wafer frontal side, and electrically connecting the wafer frontal side with at least one electrical contact, outside of the anode area, by pushing the electrical contact and the wafer frontal side into proximity with each other. A potential is applied between the anode and the electrical contact, and the wafer is moved with respect to the anode and the electrical contact. Full-face electroplating or electropolishing over the wafer frontal side surface, in its entirety, is thus permitted.