Abstract: Provided are a method and apparatus for programming a buffer cache in a Solid State Disk (SSD) system. The buffer cache programming apparatus in the SSD system may include a buffer cache unit to store pages, a memory unit including a plurality of memory chips, and a control unit to select at least one of the page as a victim page, based on a delay occurring when a page is stored in at least one target memory chip among the plurality of memory chips.

Abstract: A system and method thereof to regulate a current to a capacitive load from a power supply connected to the capacitive load. The system includes a first switch between the power supply and the capacitive load, a super-capacitor configured for charging by the power supply and powering the capacitive load, a current limiting circuit between the super-capacitor and the power supply, a second switch between the super-capacitor and the capacitive load, and a power control circuit configured to control opening and closing of the first switch and the second switch independently, sense a voltage of the power supply, and sense a voltage of the super-capacitor.

Abstract: A memory controller and methods thereof suitable for operating a system utilizing multiple memory bus channels and/or multiple banks of memory devices on each channel wherein the memory devices is polled only when necessary. The memory controller includes means for determining a status of each individual memory device of the plurality of memory devices, a channel controller for each memory bus channel, and at least one status register on which is stored a plurality of bits. The channel controller maintains a derived status of each individual memory device based on the current and previous status data. Each individual bit of the plurality of bits of the status register corresponds to an individual memory device of the plurality of memory devices and indicates the derived status of the individual memory device which are used to determine whether to check for a queued command destined for the individual memory device.

Abstract: Disclosed are a flash memory device and flash memory programming method that equalizes a wear-level. The flash memory device includes a memory cell array, an inversion determining unit to generate a programming page through inverting or not inverting a data page based on a number of ‘1’s and ‘0’s in the data page, a programming unit to store the generated programming page in the memory cell array; and a data verifying unit to read the programming page stored in the memory cell array, to restore the data page from the programming page according to whether an error exists in the read programming page, and to output the restored data page, and thereby can equalize a wear-level of a memory cell.

Abstract: Methods of operating a non-volatile solid state memory-based mass storage device having at least one non-volatile memory component. In one aspect of the invention, the one or more memory components define a memory space partitioned into user memory and over-provisioning pools based on a P/E cycle count stored in a block information record. The storage device transfers the P/E cycle count of erased blocks to a host and the host stores the P/E cycle count in a content addressable memory. During a host write to the storage device, the host issues a low P/E cycle count number as a primary address to the content addressable memory, which returns available block addresses of blocks within the over-provisioning pool as a first dimension in a multidimensional address space. Changed files are preferably updated in append mode and the previous version can be maintained for version control.

Abstract: A PCIe bus extension system, method, interface card and cable for connecting a PCIe-compliant peripheral device to a PCIe bus of a computer system. The interface card includes a printed circuit board, an edge connector adapted for insertion into a PCIe expansion slot on a motherboard of the computer system for transmitting PCIe signals between the motherboard and the interface card, an interface port configured to mate with a connector of the cable, and a logic integrated circuit on the printed circuit board, the logic integrated circuit functionally connecting the edge connector with the expansion slot and amplifying and propagating clock and data PCIe signals therebetween that are compliant with a PCIe standard. The interface card and cable lacks the capability of transmitting power therethrough to a PCIe-compliant peripheral device connected to the interface card through the interface port.

Abstract: Provided is a memory controller that generates Error Correction Code (ECC) information for data based on a required reliability level predetermined based on a type of the data, that computes an ECC code for the data based on the ECC information, and that records the ECC code in a memory based on the ECC information.

Abstract: Solid-state mass storage devices, host computer systems, and methods of managing non-volatile solid-state memory components used therein. The memory components comprise memory cells organized in functional units that are adapted to receive units of data transferred from the host computer system and correspond to the functional units of the memory component. The level of programming for each cell is reduced by performing an analysis of the bit values of the units of data to be written to at least a first of the functional units of the memory component. Depending on the analysis of “0” and “1” bit values of the units of data to be written, the bit values are inverted before writing the units of data to the first memory component.

Abstract: Methods and systems for mass storage of data over two or more tiers of mass storage media that include nonvolatile solid-state memory devices, hard disk devices, and optionally volatile memory devices or nonvolatile MRAM in an SDRAM configuration. The mass storage media interface with a host through one or more PCIe lanes on a single printed circuit board.

Abstract: Non-volatile solid state mass storage device and methods for improving write performance thereof. The storage device includes a NAND flash controller, an array of NAND flash memory integrated circuits, and means for determining a lowest unused page number of each write target block in a group of the NAND flash memory integrated circuits that are simultaneously accessible at any given time by a write command. The storage device has further means for programming a dummy write to at least a first write target block in a first NAND flash memory integrated circuit within the group of NAND flash memory integrated circuits if the lowest unused page number within the first write target block is lower than the lowest unused page number of a second write target block in a second NAND flash memory integrated circuit in the group of NAND flash memory integrated circuits.

Abstract: A system and method for increasing DDR memory bandwidth in DDR SDRAM modules are provided. DDR memory has an inherent feature called the Variable Early Read command, where the read command is issued on CAS latency before the completion of the ongoing data burst and the effect of the CAS latency is minimized in terms of the effect on bandwidth. The system and method optimizes the remaining two access latencies (tRP and tRCD) for optimal bandwidth.