Abstract: A micro light-emitting device includes a support structure with a cavity and at least one micro light-emitting element that includes a semiconductor structure accommodated by the cavity, at least one bridge connection member disposed on the semiconductor structure to interconnect the semiconductor structure and the support structure, and a protruding contact member disposed on at least one of the semiconductor structure and the bridge connection member and protruding therefrom to be configured to contact with a transfer means. The device is configured to contact with the transfer means at the protruding contact member of the element. A transfer method using the device is also disclosed.

Abstract: An electronic paper display includes a surface cover plate, a lighting module, a first optical adhesive layer, an electronic paper display module and a second optical adhesive layer. A peripheral area of a bottom surface thereof is provided with a black bezel formed by an opaque or low-light-transmittance material. The bottom surface is disposed with a low-refractive-index transparent resin layer. The lighting module has a light guide plate and multiple point light sources. The point light sources are disposed outside an outer edge of the light guide plate. The lighting module is disposed under the surface cover plate. The first optical adhesive layer glues the surface cover plate and the lighting module. The electronic paper display module is disposed under the lighting module. The second optical adhesive layer glues the lighting module and the light guide plate of the lighting module.

Abstract: A display substrate and a display device are disclosed. The display substrate includes a base substrate and a plurality of sub-pixels located thereon. Each sub-pixel includes a pixel circuit and a pixel electrode electrically connected thereto, and each pixel circuit includes a driving sub-circuit. The pixel electrode includes a main electrode part and a first electrode extension part extending therefrom. The display substrate includes first type of sub-pixels. The main electrode part of each sub-pixel of the first type of sub-pixels is not overlapped with a control electrode of the driving sub-circuit of the sub-pixel or an electrode part directly electrically connected to the control electrode, and the first electrode extension part of each pixel electrode is at least partially overlapped with the control electrode or the electrode part. The first type of sub-pixels include at least two sub-pixels configured to emit light of different colors.

Abstract: An electronic paper device includes a touch cover plate module, a front lighting module and an electronic paper display module. The touch cover plate module has a top plate, a touch sensor and a bottom plate. The top plate is disposed with a black bezel. The bottom plate is disposed with a transparent conductive film with a low refractive index. The front lighting module has a light guide plate. An outer edge portion of the light guide plate is disposed with a point light source. The point light source emits light from a side of the light guide plate to convert the emitted light into a surface light source. An upper surface of the light guide plate is attached on the transparent conductive film to form a total reflection interface on the light guide plate and an electromagnetic mask layer between the touch sensor and the electronic paper display module.

Abstract: A color conversion component and a display device. The color conversion component includes a light conversion layer including a black matrix, color conversion layers and concave-convex structure layers; the black matrix has a plurality of through holes arranged in an array; the color conversion layers are located within at least a portion of the through holes and capable of emitting a light in a wavelength range different than that of an incident light; and the concave-convex structure layers are arranged at least correspondingly in each of the through holes accommodating the color conversion layers, and each concave-convex structure layer is located on a light incident side of the light conversion layer and has a concave-convex structure surface facing towards the respective color conversion layer.

Abstract: A light-emitting element and a light-emitting device are provided. The light-emitting element includes an epitaxial layer, an insulating layer formed on a surface of the epitaxial layer, and an electrode structure. The electrode structure includes a first electrode connected to a first conductivity type semiconductor layer and a second electrode connected to a second conductivity type semiconductor layer. The electrode structure includes a wiring portion and a connecting portion. The wiring portion is located above the insulating layer. The connecting portion penetrates through the insulating layer from an edge of the wiring portion and extends towards the epitaxial layer. The connecting portion is arranged to extend from the edge of the wiring portion towards the epitaxial layer. Further, a projection of the wiring portion on a front surface of the substrate does not overlap a projection of the connecting portion on the front surface of the substrate.

Abstract: A light emitting diode, a manufacturing method, and a light emitting device are provided. The light emitting diode includes an epitaxial structure, a first electrode, a second electrode, and an insulating layer. The epitaxial structure includes a second semiconductor layer, a light emitting layer, and a first semiconductor layer stacked in sequence from bottom to top. The first electrode is located on the first semiconductor layer and is electrically connected to the first semiconductor layer. The first electrode at least includes a first metal electrode. The first metal electrode has a strip-shaped extension portion. The insulating layer is disposed on the first semiconductor layer and the first metal electrode and has a partially thinned portion. At least part of the extension portion is located below the partially thinned portion.

Abstract: A transfer device of micro-elements and manufacturing method thereof are provided in the present disclosure. The transfer device of micro-elements may comprise a vacuum chamber, a plurality of movable mass blocks and a plurality of electrode assemblies. The vacuum chamber may define a vacuum space and a plurality of through holes. The plurality of through holes can communicate the vacuum space with outside. The plurality of through holes can be configured to suck the micro-elements. The plurality of movable mass blocks may be arranged in the vacuum chamber. Each movable mass block may be arranged corresponding to a through hole. The plurality of electrode assemblies may be fixed in the vacuum chamber. Each electrode assembly can be arranged corresponding to a through hole.

Abstract: An array substrate of a display device includes a pixel electrode layer on a substrate, which includes active pixel electrodes in an active display region; outermost active pixel electrodes include a first active pixel electrode including a first pixel electrode edge and a second pixel electrode edge; in a first direction, the first pixel electrode edge is between the second pixel electrode edge and a frame region. One of the array substrate and an opposite substrate of the display device includes a common electrode layer including a first extended common electrode which includes a first extended portion extending beyond the first active pixel electrode; a first extended portion edge of the first extended portion and a first substrate edge of the substrate respectively extend in a second direction; in the first direction, the first extended portion edge is located between the first substrate edge and the first pixel electrode edge.

Abstract: A light-emitting device includes a substrate, multiple light-emitting units that are disposed on the substrate, that are spaced apart by an isolation trench and that are and electrically interconnected by an interconnecting structure, and an insulating layer with thickness of 200 nm to 450 nm. A potential difference between adjacent two light-emitting units not in direct electrical connection is at least two times forward voltage of each of the light-emitting units. Each light-emitting unit includes a light-emitting stack and a light-transmissible current spreading layer. The insulating layer covers the light-transmissible current spreading layers and at least a part of the light-emitting stacks.

Abstract: The disclosure illustrates a composite substrate and a method for manufacturing the same, the method including: disposing a mask layer on an upper surface of a substrate; forming a plurality of mask patterns spaced apart from each other to form a plurality of intervals thereamong; filling a dummy metallic material into the intervals; removing the mask patterns to form a mesh-like dummy metallic layer; and removing the dummy metallic layer while depositing a nitride layer so as to form a mesh-like structure confined by the nitride layer and the substrate. The disclosure also illustrates a method for manufacturing a light-emitting device using the composite substrate.

Abstract: The disclosure relates to the technical field of semiconductor manufacturing and particularly relates to a light emitting diode having an epitaxial structure including a first-type semiconductor layer, an active layer, and a second-type semiconductor layer. An upper surface and a sidewall of a first pad electrode are covered with a first metal covering layer. The first metal covering layer is provided with a bump at a bottom portion of the sidewall of the first pad electrode. The bump is located below the insulating layer. In this way, the metal covering layer is allowed to completely cover the pad electrode and protect the edge of the bottom portion of the pad electrode. After the insulating layer is detached herein, an active material in the pad electrode below the insulating layer is prevented from contacting the external environment, and the reliability of the light emitting diode is therefore improved.

Abstract: Provided is a method for manufacturing an optoelectronic device. The manufacturing method includes the following steps: In S1, a monolithic circuit board including multiple device units is manufactured. In S2, a chip is mounted on the first pad of the device unit, and the chip is electrically connected to the second pad so that a monolithic circuit board with the chip is obtained. In S3, the monolithic circuit board with the chip is encapsulated to obtain a monolithic optoelectronic device. In S4, the monolithic optoelectronic device is cut into individual optoelectronic devices. The method for manufacturing an optoelectronic device of the present disclosure can solve problems of substrate deformation and chips falling off and cracking during the manufacturing process of large-size and thin optoelectronic devices, thereby improving the yield rate.

Abstract: The present disclosure provides a display module, a display panel thinning method, a display panel, and a display device. The display module provided by the present disclosure includes: a display panel, a protective film located on a to-be-protected face of the display panel, a first anti-acid film located on the protective film, a second anti-acid film located on the first anti-acid film, and a sealant.

Abstract: A method for processing a wafer includes subjecting the wafer to a reduction treatment with heat and a reducing agent that has a melting point of lower than 600° C. The wafer is made of a material selected from the group consisting of lithium tantalate, lithium niobate, and a combination thereof. The wafer and the reducing agent are spaced apart from each other so that the reducing agent indirectly interacts with the wafer during the reduction treatment. Also disclosed is a processed wafer obtained by the method.

Abstract: A composite reflective structure includes at least one dielectric multilayer element which includes a first dielectric layer having a first refractive index, a second dielectric layer having a second refractive index, and a stress buffer layer interposed therebetween. The first refractive index is greater than the second refractive index. Also disclosed herein is a light-emitting diode chip including the abovementioned composite reflective structure and a light-emitting diode device including the light-emitting diode chip.

Abstract: An infrared light-emitting diode (LED) includes a semiconductor light-emitting unit which includes an active layer, a first waveguide layer, a second waveguide layer, a first cladding layer and a second cladding layer. The active layer includes at least one pair of layers. Each pair of layers includes a well layer and a barrier layer. The first and the second waveguide layers are respectively disposed on two opposite sides of the active layer, and are independently made of a semiconductor compound represented by (AlX3Ga1-X3)Y1In1-Y1P, wherein 0?X3?1 and 0?Y1?1. The first cladding layer is disposed on the first waveguide layer opposite to the active layer. The second cladding layer is disposed on the second waveguide layer opposite to the active layer.

Abstract: The disclosure relates to a vertical-type light-emitting diode, which includes a semiconductor stack layer, a first electrode, a second electrode and a protruding protective electrode. The semiconductor stack layer has an upper surface and a lower surface opposite to each other. The semiconductor stack layer includes a first semiconductor layer, a light-emitting layer and a second semiconductor layer stacked in sequence from the lower surface to the upper surface. The first electrode is located on the lower surface of the semiconductor stack layer and connected to the first semiconductor layer. The second electrode is located on the upper surface of the semiconductor stack layer and is connected to the second semiconductor layer, and the protruding protective electrode is connected to the second electrode. The upper surface of the protruding protective electrode is higher than the upper surface of the second electrode.