Abstract: An apparatus and associated method for altering the propagation constant of a region of filtering propagation constant in an optical waveguide. The method comprising positioning an electrode of an electrode shape proximate the waveguide. An altered region of filtering propagation constant is projected into the waveguide that corresponds, in shape, to the electrode shape by applying a voltage to the shaped electrode. The propagation constant of the region of filtering propagation constant is controlled by varying the voltage. Such filter embodiments as an Infinite Impulse Response filter and a Finite Impulse Response filter may be provided.

Abstract: An interferometer includes at least one optical waveguide, a first passive optical waveguide segment, and a second passive optical waveguide segment. The optical waveguide includes at least one gate oxide layer deposited on a semiconductor layer of a wafer and a polysilicon layer deposited on the gate oxide layer. The first passive optical waveguide segment includes a first portion of the polysilicon layer that projects a first region of static effective mode index within the optical waveguide. The second passive optical waveguide segment includes a second portion of the polysilicon layer that projects a second region of static effective mode index within the optical waveguide. A length of the first passive optical waveguide segment equals a length of the second passive optical waveguide segment. The first and second passive optical waveguide segments are coupled to each other and together form at least in part the optical waveguide.

Abstract: An optical transmitter includes a header, a hybrid subassembly, a laser mounted on the header, a laser driver mounted on the hybrid subassembly, and an air trench formed between the header and the hybrid subassembly.

Abstract: An effective index modifier that modifies light propagation in a waveguide. The device is formed on a wafer, such as a Silicon-On-Insulator (SOI) wafer that includes an insulator layer and an upper silicon layer. A waveguide is formed at least in part in the upper silicon layer of the SOI wafer. The waveguide guides an optical signal by total internal reflection. At least one micro-mechanical system (MEMS) having at least one movable component is disposed a positive distance away from the waveguide. Application of voltage to the MEMS results in a variation of the distance between the moveable component and the waveguide, which in turn alters the effective index of the waveguide in a location proximate the moveable object, thereby resulting in modification of light propagation in the waveguide.

Abstract: An optical transmitter that includes a laser that operates in the range of 1260-1360 nm, wherein the laser is in a transmitter package case that covers less than 0.30 square inches of surface area on a board to which the package case is mounted, wherein the optical transmitter continues to function in compliance with the transmission requirements of international telecommunciations union (ITU) standard 693 without thermoelectric cooling when an external temperature of the transmitter package case is at or within 1° C. of a temperature of the laser.

Abstract: A coplanar waveguide includes a header, a laser mounted on the header, a hybrid subassembly, wherein an air trench is formed between the hybrid subassembly and the header, a laser driver mounted on the hybrid subassembly, and a waveguide, wherein electrical energy applied from the laser driver is directed through the waveguide at the laser driver, the waveguide forms a ninety degree turn within a substantially horizontal plane, and the distance that the electrical energy travels through the coplanar waveguide is minimized.

Abstract: A Faraday cage enclosing an optical device extends between a metalized plate and an upper enclosure. The upper enclosure is vertically spaced from the metalized plate. The Faraday cage includes one or more ceramic wall portions that extend from the metalized plate to the upper enclosure and limit the passage of EMI through the ceramic wall portions. The ceramic wall portions include a plurality of laminated ceramic layers, each one of the laminated ceramic layers extending substantially parallel to the metalized plate, and a plurality of vias extending substantially perpendicular to the metalized plate through the laminated ceramic layers, each one of the plurality of vias extending substantially from the metalized plate to the upper enclosure. The plurality of vias are configured to form a pattern that limits the passage of EMI through the vias, wherein the metalized plate, the upper enclosure, and the ceramic wall portions define a Faraday cage that surrounds the optical device.

Abstract: An optical isolator includes a first magnetic polar source having a first magnet axis, a second magnetic polar source having a second magnet axis parallel to the first magnet axis, and an optical element between the first and second magnetic polar sources, and having a length along the first magnet axis that is less than a length of the first magnetic polar source along the first magnet axis. The optical element has a central axis that is tilted with respect to the second magnet axis.

Abstract: A method of removing an optical device contained within a device package from a circuit board, wherein the device package is secured to the circuit board using an adhesive pad. The method includes peeling a portion of the adhesive pad away from the circuit board, inserting an optical removal tool between the optical device and the circuit board, wherein the optical removal tool has a pair of fork portions and a cavity positioned between the fork portions, and the fork portions straddle one or more leads on the optical device during the inserting step, and prying the remainder of the adhesive pad away from the circuit board using the optical device removal tool.

Abstract: An apparatus for mounting an optical device includes an adhesive pad having two substantially planar faces coated with an adhesive that facilitates mounting the optical device to a circuit board so the optical device remains affixed through a range of operating temperature and pressures.

Abstract: An optical transmitter includes a planarized header, a laser mounted on a plane of the planarized header, wherein an axis of light emitted from the laser is parallel to the plane, and a temperature sensor is located on the planarized header. A temperature of the laser is obtained from an output of the temperature sensor without application of an offset to the output of the temperature sensor.

Abstract: A method of positioning a heat generating component on a header to enhance heat sinking characteristics includes positioning the header on a first pedestal, wherein the first pedestal and the header are bounded by an air trench having a vertical surface, and positioning the heat generating component only in areas on the header having an associated heat dissipation conical region extending from the heat generating component downward through the first pedestal at an angle that satisfies Fourier's Law of Heat Conduction, wherein the conical region does not intersect the vertical surface of the air trench.

Abstract: A method for forming a hybrid active electronic and optical circuit using a lithography mask. The hybrid active electronic and optical circuit comprising an active electronic device and at least one optical device on a Silicon-On-Insulator (SOI) wafer. The SOI wafer including an insulator layer and an upper silicon layer. The upper silicon layer including at least one component of the active electronic device and at least one component of the optical device. The method comprising projecting the lithography mask onto the SOI waver in order to simultaneously pattern the component of the active electronic device and the component of the optical device on the SOI wafer.

Abstract: A self-aligned optical modulator that modulates an input optical signal in order to generate a modulated output optical signal includes an optical modulator device including a waveguide, a first modulating electrode, a second modulating electrode, and a two-dimensional electron (hole) gas (2DEG) proximate the first modulating electrode, the waveguide includes an input port wherein the input optical signal is introduced into the waveguide, an output port wherein the modulated output optical signal exits the waveguide, and a region of modulating propagation constant disposed along a first length of the waveguide and between the input port and the output port, wherein the input optical signal is guided by total internal reflection in the waveguide, and the waveguide is formed at least in part from an active semiconductor. The first modulating electrode is positioned proximate a first surface of the region of modulating propagation constant and electrically separated from an active semiconductor.

Abstract: An apparatus and associated method for altering the propagation constant of a region of deflecting propagation constant in an optical waveguide. The method comprising positioning an electrode of an electrode shape proximate the waveguide. A region of deflecting propagation constant is projected into the waveguide and corresponds, in shape, to the electrode shape by applying a voltage to the shaped electrode. The propagation constant of the region of deflecting propagation constant is controlled by varying the voltage that adjusts a deflection angle applied to an input optical signal flowing through the waveguide.

Abstract: A method for forming a hybrid active electronic and optical circuit using a lithography mask. The hybrid active electronic and optical circuit comprising an active electronic device and at least one optical device on a Silicon-On-Insulator (SOI) wafer. The SOI wafer including an insulator layer and an upper silicon layer. The upper silicon layer including at least one component of the active electronic device and at least one component of the optical device. The method comprising projecting the lithography mask onto the SOI waver in order to simultaneously pattern the component of the active electronic device and the component of the optical device on the SOI wafer.

Abstract: An interferometer includes at least one optical waveguide, a first passive optical waveguide segment, and a second passive optical waveguide segment. The optical waveguide includes at least one gate oxide layer deposited on a semiconductor layer of a wafer and a polysilicon layer deposited on the gate oxide layer. The first passive optical waveguide segment includes a first portion of the polysilicon layer that projects a first region of static effective mode index within the optical waveguide. The second passive optical waveguide segment includes a second portion of the polysilicon layer that projects a second region of static effective mode index within the optical waveguide. A length of the first passive optical waveguide segment equals a length of the second passive optical waveguide segment. The first and second passive optical waveguide segments are coupled to each other and together form at least in part the optical waveguide.

Abstract: A method for forming a hybrid active electronic and optical circuit using a lithography mask. The hybrid active electronic and optical circuit comprising an active electronic device and at least one optical device on a Silicon-On-Insulator (SOI) wafer. The SOI wafer including an insulator layer and an upper silicon layer. The upper silicon layer including at least one component of the active electronic device and at least one component of the optical device. The method comprising projecting the lithography mask onto the SOI waver in order to simultaneously pattern the component of the active electronic device and the component of the optical device on the SOI wafer.

Abstract: A method for forming a hybrid active electronic and optical circuit using a lithography mask. The hybrid active electronic and optical circuit comprising an active electronic device and at least one optical device on a Silicon-On-Insulator (SOI) wafer. The SOI wafer including an insulator layer and an upper silicon layer. The upper silicon layer including at least one component of the active electronic device and at least one component of the optical device. The method comprising projecting the lithography mask onto the SOI waver in order to simultaneously pattern the component of the active electronic device and the component of the optical device on the SOI wafer.

Abstract: A method for forming a hybrid active electronic and optical circuit using a lithography mask. The hybrid active electronic and optical circuit comprising an active electronic device and at least one optical device on a Silicon-On-Insulator (SOI) wafer. The SOI wafer including an insulator layer and an upper silicon layer. The upper silicon layer including at least one component of the active electronic device and at least one component of the optical device. The method comprising projecting the lithography mask onto the SOI waver in order to simultaneously pattern the component of the active electronic device and the component of the optical device on the SOI wafer.