Abstract: A method for forming a hybrid active electronic and optical circuit using a lithography mask. The hybrid active electronic and optical circuit comprising an active electronic device and at least one optical device on a Silicon-On-Insulator (SOI) wafer. The SOI wafer including an insulator layer and an upper silicon layer. The upper silicon layer including at least one component of the active electronic device and at least one component of the optical device. The method comprising projecting the lithography mask onto the SOI waver in order to simultaneously pattern the component of the active electronic device and the component of the optical device on the SOI wafer.

Abstract: An optical polarization controller apparatus and associated method that controls a first temporal separation between a first polarization and a second polarization of an output optical signal, wherein a second temporal separation exists between a first polarization and a second polarization of an input optical signal. The optical polarization controller comprises a controller, a polarization separation device, and a delay element. The controller determines the first temporal separation. The controller compares the first temporal separation with the second temporal separation. The polarization separation device transmits the first polarization of the output optical signal along a first path and transmits the second polarization of the output optical signal along a second path.

Abstract: A method for forming a hybrid active electronic and optical circuit using a lithography mask. The hybrid active electronic and optical circuit comprising an active electronic device and at least one optical device on a Silicon-On-Insulator (SOI) wafer. The SOI wafer including an insulator layer and an upper silicon layer. The upper silicon layer including at least one component of the active electronic device and at least one component of the optical device. The method comprising projecting the lithography mask onto the SOI waver in order to simultaneously pattern the component of the active electronic device and the component of the optical device on the SOI wafer.

Abstract: A method for forming a hybrid active electronic and optical circuit using a lithography mask. The hybrid active electronic and optical circuit comprising an active electronic device and at least one optical device on a Silicon-On-Insulator (SOI) wafer. The SOI wafer including an insulator layer and an upper silicon layer. The upper silicon layer including at least one component of the active electronic device and at least one component of the optical device. The method comprising projecting the lithography mask onto the SOI waver in order to simultaneously pattern the component of the active electronic device and the component of the optical device on the SOI wafer.

Abstract: An optical polarization controller apparatus and associated method that controls a first temporal separation between a first polarization and a second polarization of an output optical signal, wherein a second temporal separation exists between a first polarization and a second polarization of an input optical signal. The optical polarization controller comprises a controller, a polarization separation device, and a delay element. The controller determines the first temporal separation. The controller compares the first temporal separation with the second temporal separation. The polarization separation device transmits the first polarization of the output optical signal along a first path and transmits the second polarization of the output optical signal along a second path.

Abstract: An optical interferometer apparatus and associated method including a beamsplitter, a first mirror, a second mirror, and a delay element. The beamsplitter splits an input optical signal into a first optical signal that flows along a first optical path and a second optical signal that flows along a second optical path. The first mirror reflects the first signal in the first path towards the beamsplitter to form a first return path. The second mirror reflects the second signal in the second path towards the beamsplitter to form a second return path. The delay element includes the first mirror that adjusts a time required for the first signal to flow from the beamsplitter along the first path, be reflected by the first mirror, and return along the first return path to the beamsplitter. The waveguide includes a region of changeable propagation constant disposed along a length of the waveguide.

Abstract: An apparatus and associated method for changing the propagation constant of a region of delaying propagation constant in an optical waveguide. The method comprising positioning an electrode of a prescribed electrode shape proximate the waveguide. A changeable region of delaying propagation constant is projected into the waveguides that corresponds, in shape, to the prescribed electrode shape by applying a voltage to the shaped electrode. The propagation constant level of the region of delaying propagation constant is controlled by varying the voltage. Light passing through the region of delaying propagation constant is delayed by a controllable amount.

Abstract: A self-aligned optical modulator that modulates an input optical signal in order to generate a modulated output optical signal includes an optical modulator device including a waveguide, a first modulating electrode, a second modulating electrode, and a two-dimensional electron (hole) gas (2DEG) proximate the first modulating electrode, the waveguide includes an input port wherein the input optical signal is introduced into the waveguide, an output port wherein the modulated output optical signal exits the waveguide, and a region of modulating propagation constant disposed along a first length of the waveguide and between the input port and the output port, wherein the input optical signal is guided by total internal reflection in the waveguide, and the waveguide is formed at least in part from an active semiconductor. The first modulating electrode is positioned proximate a first surface of the region of modulating propagation constant and electrically separated from an active semiconductor.

Abstract: An apparatus and associated method for controlling the propagation constant of a region of focusing propagation constant in an optical waveguide. The method comprising positioning an electrode of a prescribed electrode shape proximate the waveguide. A region of focusing propagation constant is projected into the waveguides that corresponds, in shape, to the prescribed electrode shape by applying a voltage to the shaped electrode. The propagation constant of the region of focusing propagation constant is controlled by varying the voltage. Light of certain wavelengths passing through the region of focusing propagation constant has a variable focal length.

Abstract: An apparatus and associated method for altering the propagation constant of a region of changable propagation constant in an optical waveguide. The method comprising positioning an electrode of a prescribed electrode shape proximate the waveguide. An altered region of changable propagation constant is projected into the waveguides that correspond, in shape, to the prescribed electrode shape by applying a voltage to the shaped electrode. The propagation constant of the region of changable propagation constant is controlled by varying the voltage.

Abstract: An apparatus and associated method for altering the propagation constant of a region of deflecting propagation constant in an optical waveguide. The method comprising positioning an electrode of an electrode shape proximate the waveguide. A region of deflecting propagation constant is projected into the waveguide and corresponds, in shape, to the electrode shape by applying a voltage to the shaped electrode. The propagation constant of the region of deflecting propagation constant is controlled by varying the voltage that adjusts a deflection angle applied to an input optical signal flowing through the waveguide.

Abstract: An apparatus and associated method for altering the propagation constant of a region of filtering propagation constant in an optical waveguide. The method comprising positioning an electrode of an electrode shape proximate the waveguide. An altered region of filtering propagation constant is projected into the waveguide that corresponds, in shape, to the electrode shape by applying a voltage to the shaped electrode. The propagation constant of the region of filtering propagation constant is controlled by varying the voltage. Such filter embodiments as an Infinite Impulse Response filter and a Finite Impulse Response filter may be provided.

Abstract: An apparatus and associated method for modulating the propagation constant of a region of modulating propagation constant in an optical waveguide. The method comprising positioning an electrode of a prescribed electrode shape proximate the waveguide. The region of modulating propagation constant is projected into the waveguides that correspond, in shape, to the prescribed electrode shape by applying a voltage to the shaped electrode. The propagation constant of the region of modulating propagation constant is controlled by varying the voltage.

Abstract: A method for forming a hybrid active electronic and optical circuit using a lithography mask. The hybrid active electronic and optical circuit comprising an active electronic device and at least one optical device on a Silicon-On-Insulator (SOI) wafer. The SOI wafer including an insulator layer and an upper silicon layer. The upper silicon layer including at least one component of the active electronic device and at least one component of the optical device. The method comprising projecting the lithography mask onto the SOI waver in order to simultaneously pattern the component of the active electronic device and the component of the optical device on the SOI wafer.

Abstract: A passive optical waveguide device deposited on a wafer that includes an insulator layer and an upper semiconductor layer formed at least in part from silicon. The upper silicon layer forms at least part of an optical waveguide, such as a slab waveguide. The passive optical waveguide device includes an optical waveguide, a gate oxide, and a polysilicon layer. The optical waveguide is formed within the upper semiconductor layer, a gate oxide layer that is deposited above the upper semiconductor layer, and a polysilicon layer that is deposited above the gate oxide layer. The polysilicon layer projects a region of static effective mode index within the optical waveguide. The region of static effective mode index has a different effective mode index than the optical waveguide outside of the region of static effective mode index. The region of static effective mode index has a depth extending within the optical waveguide.

Abstract: An integrated optical circuit comprising an optical waveguide and an evanescent coupler. The optical waveguide is located on a wafer. The optical waveguide is formed from an upper semiconductor layer of the wafer, a gate oxide layer deposited on the upper semiconductor layer, and a polysilicon layer deposited on the gate oxide layer. The evanescent coupling region is formed at least in part from a gap portion that optically couples light to the upper semiconductor layer of the optical waveguide using the evanescent coupling region. Light can be coupled from outside of the passive optical waveguide device via the evanescent coupling region into the optical waveguide. Alternatively, light can be coupled from the optical waveguide through the evanescent coupling region out of the passive optical waveguide device.

Abstract: An optical waveguide device includes a first passive optical waveguide device and a second passive optical waveguide device. The first passive optical waveguide device is etched, at least in part, in a semiconductor layer of a wafer. The value and position of an effective mode index within the first passive optical waveguide device remains substantially unchanged over time. The second passive optical waveguide device is formed at least in part from a polysilicon layer deposited above an unetched portion of the semiconductor layer. The effective mode index of a region of static effective mode index within the optical waveguide is created by the polysilicon layer of the second passive optical waveguide device. The value and position of the effective mode index within the region of static effective mode index remains substantially unchanged over time. The optical waveguide forms at least a part of both the first passive optical waveguide device and the second passive optical waveguide device.

Abstract: An optical device includes a semiconductor layer and a polysilicon coupler. The semiconductor layer includes at least one etched portion between first and second unetched portions. A first optical waveguide includes the first unetched portion and a first total internal reflection (TIR) boundary between the first unetched portion and the at least one etched portion. A second optical waveguide includes the second unetched portion and a second TIR boundary between the at least one unetched portion and the second etched portion. A polysilicon coupler at least partially overlaps the etched portion of the semiconductor layer. The polysilicon coupler optically couples the first optical waveguide and the second optical waveguide, wherein light can flow from the first optical waveguide via the polysilicon coupler portion to the second optical waveguide.

Abstract: An arrayed waveguide grating deposited on a wafer that includes an upper semiconductor layer comprising a first port, a plurality of second ports, a gate oxide layer, a polysilicon layer, and a plurality of arrayed waveguides. The gate oxide layer is deposited above the upper semiconductor layer. The polysilicon layer is deposited above the gate oxide layer. The plurality of arrayed waveguides extend between the first port and each one of the plurality of second ports. Each one of the plurality of arrayed waveguides are at least partially formed by the upper semiconductor layer, the polysilicon layer, and the gate oxide layer. Each one of the arrayed waveguides is associated with a portion of the polysilicon layer. Each portion of the polysilicon layer has a different cross-sectional area, wherein each of the arrayed waveguides has a different effective mode index.

Abstract: An apparatus and associated method for altering the propagation constant of a region of equalizing propagation constant in an optical waveguide. The method comprising positioning an electrode of a prescribed electrode shape proximate the waveguide. An altered region of equalizing propagation constant is projected into the waveguide that corresponds, in shape, to the prescribed electrode shape by applying a voltage to the shaped electrode. The propagation constant of the region of equalizing propagation constant is controlled by varying the voltage.