Abstract: In one embodiment, the optoelectronic semiconductor chip comprises a semiconductor layer sequence with an active zone for generating radiation with a wavelength of maximum intensity L. A mirror comprises a cover layer. The cover layer is made of a material transparent to the radiation and has an optical thickness between 0.5 L and 3 L inclusive. The cover layer is followed in a direction away from the semiconductor layer sequence by between inclusive two and inclusive ten intermediate layers of the mirror. The intermediate layers alternately have high and low refractive indices. An optical thickness of at least one of the intermediate layers is not equal to L/4. The intermediate layers are followed in the direction away from the semiconductor layer sequence by at least one metal layer of the mirror as a reflection layer.

Abstract: A radiation-emitting component (1) is specified with a carrier (2) having a cavity (9), a radiation-emitting semiconductor chip (3) which is arranged on a bottom surface delimiting the cavity (9) and which is configured to generate primary electromagnetic radiation, and a first reflector layer (6) arranged above a top surface of the semiconductor chip (3), wherein the carrier (2) is transparent in places to the primary electromagnetic radiation, and the semiconductor chip (3) is spaced apart from at least one side surface delimiting the cavity (9).

Abstract: In an embodiment a component includes a carrier, at least one optoelectronic part arranged on the carrier, the optoelectronic part configured to emit electromagnetic radiation, a frame arranged on the carrier and enclosing a part space, wherein the optoelectronic part is arranged in the part space, and wherein the frame comprises a reflector, and a lens arranged on the frame and at least partially covering an opening of the part space, wherein the reflector is configured to direct the electromagnetic radiation onto the lens, wherein the lens is configured to direct the electromagnetic radiation of the optoelectronic part, and wherein the lens comprises at least a partial pyramidal-shaped section on a first side face facing toward the optoelectronic part.

Abstract: Carrier with an electrically insulating base material, electrically conductive through-connections and a thermal connection element. The through-connections and the thermal connection element are each completely surrounded by the base material in the lateral direction, the thermal connection element and the through-connections completely penetrating the base material perpendicularly to the main extension plane of the carrier, and the thermal connection element being formed with a material which has a thermal conductivity of at least 200 W/(m K).

Abstract: Optoelectronic components, groups of optoelectronic components, and methods for producing a component or a plurality of optoelectronic components are provided. The method may include providing a growth substrate having a buffer layer arranged thereon. The buffer layer may be structured in such a way that it has a plurality of the openings which are spaced apart from one another in lateral directions. A plurality of semiconductor bodies may be formed in the openings, wherein in the areas of the openings, the buffer layer has subregions which are arranged in a vertical direction between the growth substrate and the semiconductor bodies. The growth substrate may be detached from the semiconductor bodies. The buffer layer may be removed at least in the areas of the subregions.

Abstract: In an embodiment a method for manufacturing an optoelectronic semiconductor device includes providing a semiconductor body having an active region configured to generate electromagnetic radiation and a coupling-out surface along a main radiation direction, forming a mask layer having a plurality of recesses on the coupling-out surface on the semiconductor body, depositing metallic separators in the recesses and applying a wavelength conversion element to the coupling-out surface of the semiconductor body such that the metallic separators are at least partially embedded therein.

Abstract: A semiconductor laser (1) is provided that includes a semiconductor layer sequence in which an active zone for generating laser radiation is located. A ridge waveguide is formed as an elevation from the semiconductor layer sequence. An electrical contact layer is located directly on the ridge waveguide. A metallic electrical connection region is located directly on the contact layer and is configured for external electrical connection of the semiconductor laser. A metallic breakage coating extends directly to facets of the semiconductor layer sequence and is arranged on the ridge waveguide. The breakage coating is electrically functionless and includes comprises a lower speed of sound for a breaking wave than the semiconductor layer sequence in the region of the ridge waveguide.

Abstract: In one embodiment, the optoelectronic semiconductor chip comprises a semiconductor layer sequence with an active zone for generating radiation with a wavelength of maximum intensity L. A mirror comprises a cover layer. The cover layer is made of a material transparent to the radiation and has an optical thickness between 0.5 L and 3 L inclusive. The cover layer is followed in a direction away from the semiconductor layer sequence by between inclusive two and inclusive ten intermediate layers of the mirror. The intermediate layers alternately have high and low refractive indices. An optical thickness of at least one of the intermediate layers is not equal to L/4. The intermediate layers are followed in the direction away from the semiconductor layer sequence by at least one metal layer of the mirror as a reflection layer.

Abstract: The invention relates to a method for producing optoelectronic components. The invention comprises: provision of a metal substrate, the substrate having a front side and a rear side opposite the front side; front-side removal of substrate material such that the substrate comprises substrate sections protruding in the region of the front side and recesses arranged there between; formation of a plastic body adjacent to substrate sections; arrangement of optoelectronic semiconductor chips on substrate sections; rear-side removal of substrate material in the region of the recesses, such that the substrate is structured into separate substrate sections; and performance of a separation process. The plastic body is divided into separate substrate sections and individual optoelectronic components with at least one optoelectronic semiconductor chip are formed. The invention also relates to an optoelectronic component.

Abstract: Provided is a measuring system (1), which comprises a sender unit (10) with at least one individually operable LED lighting unit (12) with a luminous area which has a characteristic longitudinal extent (107) of less than or equal to 100 ?m and/or a surface area of less than or equal to 104 ?m2, wherein the LED lighting unit (12) is configured to emit at least one light pulse as a sender signal (11) during operation, and comprises the one receiver unit (20) with at least one detector unit (22) for receiving a return signal (21), which comprises at least a part of the sender signal (11) reflected by an external object. Furthermore, use of at least one individually operable LED lighting unit as a sender unit in a measuring system, a method for operating a measuring system and a lighting source having a measuring system are provided.

Abstract: In an embodiment, an optoelectronic semiconductor component includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, wherein a respective semiconductor material of the first and second semiconductor layers are each a compound semiconductor material including a first, a second and a third composition element, and a second contact region configured to electrically contact the second semiconductor layer, wherein the first semiconductor layer is patterned and arranged over the second semiconductor layer, wherein the second contact region is arranged between patterned regions of the first semiconductor layer, wherein the second contact region comprises a second metallic contact layer and a semiconductor contact layer between the second metallic contact layer and the second semiconductor layer, wherein a semiconductor material of the semiconductor contact layer includes the first, second and third composition elements, and wherein a concentration

Abstract: A light-emitting component a first layer stack configured to generate light, at least one additional layer stack configured to generate light, where each of the first layer stack and the at least one additional layer stack are separately drivable from one another and where an auxiliary structure is arranged between the first layer stacks and the at least one additional layer stacks.

Abstract: An optoelectronic semiconductor component and a 3D printer are disclosed. In an embodiment the component includes a carrier and a plurality of individually controllable pixels, wherein the pixels are mounted on the carrier and are formed from at least one semiconductor material, and wherein the pixels are configured to emit radiation having a wavelength of maximum intensity of 470 nm or less.

Abstract: In an embodiment a laser diode includes a surface emitting semiconductor laser configured to emit electromagnetic radiation and an optical element arranged downstream of the semiconductor laser in a radiation direction, wherein the optical element includes a diffractive structure or a meta-optical structure or a lens structure, wherein the optical element and the semiconductor laser are cohesively connected to each other, and wherein the semiconductor laser and the optical element are integrated with the laser diode.

Abstract: The invention relates to a semiconductor laser including a carrier, an edge-emitting laser diode which is arranged on the carrier and which has an active zone for generating laser radiation and a facet with a radiation exit area, an optical element which covers the facet, a connecting material which is arranged between the optical element and the facet, a molded body which covers the laser diode and the optical element at least in places, wherein the optical element is at least partially transparent to the laser radiation emitted by the laser diode during operation, and the optical element is designed to change the main propagation direction of the laser radiation entering the optical element during operation.

Abstract: An optoelectronic component includes a layer structure including an active zone that generates electromagnetic radiation and is arranged in a plane, wherein the layer structure includes a top side and four side faces, first and third side faces are arranged opposite one another, second and fourth side faces are arranged opposite one another, a strip-shaped ridge structure is arranged on the top side of the layer structure and extends between the first side face and the third side face, the first side face constitutes an emission face for electromagnetic radiation, wherein a first recess is introduced into the top side of the layer structure laterally alongside the ridge structure, a second recess is introduced into the first recess, the second recess extends as far as the second side face, and at least one third recess is introduced into a base face of the first recess laterally alongside the ridge structure.

Abstract: A semiconductor device includes a first semiconductor body including a substrate having a first thickness, wherein the first semiconductor body includes a first active zone that generates or receives radiation, and a second semiconductor body having a second thickness smaller than the first thickness and including a tear-off point is arranged on the substrate and connected in an electrically conducting manner to the first semiconductor body, wherein the second semiconductor body includes a second active zone that generates or receives radiation, and the second active zone generates radiation and the first active zone detects the radiation, and the first semiconductor body includes contacts on its underside for connection to the semiconductor device.

Abstract: In one embodiment the semiconductor laser (1) comprises a carrier (2) and an edge-emitting laser diode (3) which is mounted on the carrier (2) and which comprises an active zone (33) for generating a laser radiation (L) and a facet (30) with a radiation exit region (31). The semiconductor laser (1) further comprises a protective cover (4), preferably a lens for collimation of the laser radiation (L). The protective cover (4) is fastened to the facet (30) and to a side surface (20) of the carrier (2) by means of an adhesive (5). A mean distance between a light entrance side (41) of the protective cover (4) and the facet (30) is at most 60 ?m. The semiconductor laser (1) is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

Abstract: An optoelectronic component and a manufacturing method are disclosed. In an embodiment an optoelectronic component includes an optoelectronic semiconductor chip, a housing having a top side and two protrusions on the top side projecting beyond the top side and a transparent structure, wherein the optoelectronic semiconductor chip is arranged between the protrusions, and wherein the transparent structure is at least partially arranged on the top side of the housing between the protrusions and partially above the optoelectronic semiconductor chip.

Abstract: In at least one embodiment, the optoelectronic component comprises an optoelectronic semiconductor chip with an emission side and a rear side opposite the emission side. Furthermore, the component comprises a housing body with a top side and an underside opposite the top side, and a metal layer on the top side of the housing body. During proper operation, the semiconductor chip emits primary electromagnetic radiation via the emission side. The semiconductor chip is embedded in the housing body and laterally surrounded by the housing body. The emission side is on the rear side and the top side is downstream of the underside along a main emission direction of the semiconductor chip. The metal layer is at least partially reflecting or absorbing radiation generated by the optoelectronic component.