Abstract: A method for producing an optoelectronic component includes forming an optoelectronic layer structure including a functional layer structure above a carrier, forming a frame structure including a first metallic material on the optoelectronic layer structure such that a region above the functional layer structure is free of the frame structure and that the frame structure surrounds the region, forming an adhesion layer including a second metallic material above a covering body, applying a liquid first alloy to the optoelectronic layer structure and/or to the adhesion layer of the covering body in the region, coupling the covering body to the optoelectronic layer structure such that the adhesion layer is coupled to the frame structure and the liquid first alloy is in direct contact with the adhesion layer and the frame structure, and reacting part of the first alloy chemically with the metallic materials of the frame structure and the adhesion layer.

Abstract: An organic electronic device comprising: a substrate; (1), a first electrode; (2), a second electrode (4); and an electron-conducting region (3A, 3B) which is arranged between the first and; second electrodes and comprises an organic matrix material (3B) and a salt (3A) which comprises a metal cation and an at least trivalent anion.

Abstract: An organic light-emitting component has an active layer for emitting electromagnetic radiation. It also has an anode and an organic charge transport layer, arranged between the active layer and the anode, for transporting charge carriers from the anode to the active layer. The anode can be used to decouple electromagnetic radiation emitted by the active layer from the organic light-emitting component. The organic charge transport layer comprises a copper complex which has at least one ligand with the chemical structure as per a formula I.

Abstract: An optoelectronic component may include a carrier element having a heat sink, at least one semiconductor chip for emitting electromagnetic radiation which is mounted and electrically contact-connected on the carrier element, a radiation-transmissive cover disposed downstream of the at least one semiconductor chip, a converter layer applied on the radiation-transmissive cover and spaced apart from the at least one semiconductor chip, a frame composed of thermally conductive material, which frame extends around the at least one semiconductor chip and is in direct contact with the converter layer, and at least one connecting element for thermally connecting the frame to the heat sink.

Abstract: A method for producing a plurality of optoelectronic components may include measuring at least one measurement parameter for a first optoelectronic component and a second optoelectronic component, and processing the first optoelectronic component and the second optoelectronic component taking account of the measured measurement parameter value of the first optoelectronic component and the measured measurement parameter value of the second optoelectronic component, such that the optoelectronic properties of the first optoelectronic component and the optoelectronic properties of the second optoelectronic component are changed in a different way toward at least one common predefined optoelectronic target property. The processing of at least one value of a measurement parameter of the optoelectronic properties of the first optoelectronic component or of the optoelectronic properties of the second optoelectronic component toward the optoelectronic target property is formed by means of a compensation element.

Abstract: An optoelectronic device is provided which comprises a functional layer stack (6), an encapsulation layer (7) provided for encapsulating the layer stack, and at least one metal layer (8), wherein the functional layer stack comprises at least one organic active layer (63), which emits electromagnetic radiation when the device is in operation, the encapsulation layer completely covers the at least one organic active layer when viewed in plan view onto the layer stack, and the metal layer is arranged on a side of the encapsulation layer remote from the layer stack.

Abstract: Different embodiments of the optoelectronic component have an organic layer structure for isolating charge carriers of a first charge carrier type and charge carriers of a second charge carrier type. The organic layer structure comprises a copper complex which has at least one ligand with the chemical structure as per a formula (I). In this formula, E1 and E2 are each one of the following elements independently of one another: oxygen, sulphur or selenium. R is chosen from the group comprising: hydrogen or substituted or unsubstituted, branched, linear or cyclic hydrocarbons.

Abstract: A light-emitting organic component is specified, comprising—an organic active region (3), in which light is generated during the operation of the component, and—an uneven light exit surface (6), through which at least part of the light generated in the organic active region (3) emerges from the component, wherein—a multiplicity of optical structures (7) which optically influence the light passing through and/or impinging on them are arranged at the uneven light exit surface (6).

Abstract: An optoelectronic component may include a carrier, a protective layer on or above the carrier, a first electrode on or above the protective layer, an organic functional layer structure on or above the first electrode, and a second electrode on or above the organic functional layer structure. The protective layer has a lower transmission than the carrier for electromagnetic radiation having a wavelength of less than approximately 400 nm at least in one wavelength range. The protective layer includes a glass.

Abstract: Various embodiments may relate to a method for producing an optoelectronic component. The method may include providing an optoelectronic component comprising a dielectric layer on or above an electrically conductive layer, wherein the dielectric layer is designed for sealing the electrically conductive layer substantially hermetically impermeably with regard to water, wherein the dielectric layer has diffusion channels, and closely closing the dielectric layer, wherein at least some of the diffusion channels in the dielectric layer are closed.

Abstract: In at least one embodiment of the organic optoelectronic component (1), the latter comprises a carrier (2) and a first electrode (11), which is mounted on the carrier (2). Furthermore, the component (1) contains at least one organic layer sequence (3) with at least one organic active layer (33). Furthermore, the component (1) comprises a second electrode (22), such that the organic layer sequence (3) is located between the first electrode (11) and the second electrode (22). At least one dark region (4) and at least one bright region (5) are formed in a lateral direction. In both the dark region (4) and the bright region (5), both the first electrode (11) and the second electrode (22) and also the organic layer sequence (3) are applied to the carrier (2) in places or over the entire surface. A first reflectivity of the dark region (4) differs from a second reflectivity of the bright region (5) by at most 15 percentage points.

Abstract: An optoelectronic component may include a first organic functional layer structure, a second organic functional layer structure, and a charge generating layer structure between the first organic functional layer structure and the second organic functional layer structure. The charge generating layer structure includes a first electron-conducting charge generating layer, and a second electron-conducting charge generating layer. The second electron-conducting charge generating layer is formed from a single substance, and the substance of the first electron-conducting charge generating layer is a substance selected from the group of substances consisting of: HAT-CN, Cu(I)pFBz, NDP-2, NDP-9, Bi(III)pFBz, F16CuPc.

Abstract: An element (1) is provided for stabilising an optoelectronic device (7), wherein the element (1) comprises a main body (1C), wherein the main body (1C) consists of a glass or at least comprises a glass and wherein the main body (1C) comprises a first and a second surface (1A, 1B). The first and second surface (1A, 1B) are opposite to one another and extend in each case in a lateral main direction of extension of the element (1), wherein a protective layer (2A, 2B) is formed at least at one of the surfaces (1A, 1B) and wherein the protective layer (2A, 2B) is configured and arranged in such a way that cracks (3) present in the main body (1C) are filled in by a material of the protective layer (2A, 2B). In addition, a method is provided for producing an element (1) for stabilising an optoelectronic device (7). In addition, an optoelectronic device (7) is provided.

Abstract: An extensive light-emitting element, a flash apparatus and an electronic device having a flash apparatus are disclosed. In an embodiment the extensive light-emitting element includes at least one OLED, wherein the OLED comprises an organic light-emitting layer sequence arranged between a substrate and a covering layer, and wherein the organic light-emitting layer sequence comprises a recess in a region of the extensive light-emitting element.

Abstract: Various embodiments may relate to an optoelectronic component apparatus, including a carrier, an optoelectronic component and a thermoelectric component on or above the carrier. The optoelectronic component has a planar, optically active region. The thermoelectric component has at least one thermoelectrically sensitive section, wherein the thermoelectrically sensitive section has a first electrical conductivity at a first temperature and a second electrical conductivity at a second temperature, and wherein the thermoelectrically sensitive section is thermally connected to the optoelectronic component in a planar fashion. The thermoelectric component is formed as a temperature sensor and/or thermogenerator.

Abstract: In various embodiments, an optoelectronic component is provided. The optoelectronic component may include a light-transmissive carrier, a light-transmissive electrode above the carrier, an organic functional layer structure, which has a first refractive index, above the first electrode, a light-transmissive current distributing layer above the organic functional layer structure, a light-transmissive TIR layer, which has a second refractive index, which is less than the first refractive index, above the current distributing layer, a specularly reflective current supply layer above the TIR layer, and at least one current conducting element which extends through the TIR layer and electrically couples the current supply layer and the current distributing layer to one another.

Abstract: In various embodiments, an organic light-emitting component is provided. The organic light-emitting component has a carrier, a first electrode above the carrier, an organic functional layer structure above the first electrode and a second electrode above the organic functional layer structure. The organic functional layer structure includes first organic emitters that emit in the blue spectral region, second organic emitters that emit in the green spectral region and third organic emitters that emit in the red spectral region. The third organic emitters include a molecule having at least one ligand having a plurality of ligand units. The third organic emitters have the property that, on emission of light, a charge transfer takes place from one of the ligand units of the ligand of one of the molecules to another of the ligand units of the same ligand of the same molecule and the corresponding singlet-triplet splitting is small.

Abstract: A thin-layer encapsulation (1) for an optoelectronic component. The thin-layer encapsulation (1) comprises a sequence of layers (2) that comprises the following layers: a first ALD layer (3) deposited by means of atomic layer deposition, and a second ALD layer (4) deposited by means of atomic layer deposition. A method is disclosed for producing the thin-layer encapsulation and an optoelectronic component is disclosed having such a thin-layer encapsulation.

Abstract: Various embodiments may relate to a method for producing an optoelectronic component. The method may include increasing a refractive index of a substrate in at least one region at at least one predefined position in the substrate in such a way that the region having an increased refractive index extends as far as a surface of the substrate, and forming an electrode layer on or above the surface of the substrate at least partly above the region having an increased refractive index.

Abstract: Forming an arrangement of two ceramic barrier layers (5, 10) on a polymeric substrate (1) includes the steps of applying a first ceramic barrier layer (5) on the substrate (1). The surface (5A) of the first barrier layer (5) is modified to introduce new nucleation sites on the surface of the first layer. A second ceramic barrier layer (10) is formed on the first barrier layer (5) using the new nucleation sites. The second ceramic barrier layer is deposited with independent nucleation sites such that a barrier stack of enhanced quality is formed.