Abstract: An optoelectronic device is provided which comprises a functional layer stack (6), an encapsulation layer (7) provided for encapsulating the layer stack, and at least one metal layer (8), wherein the functional layer stack comprises at least one organic active layer (63), which emits electromagnetic radiation when the device is in operation, the encapsulation layer completely covers the at least one organic active layer when viewed in plan view onto the layer stack, and the metal layer is arranged on a side of the encapsulation layer remote from the layer stack.

Abstract: Various embodiments may relate to an optoelectronic component apparatus, including a carrier, an optoelectronic component and a thermoelectric component on or above the carrier. The optoelectronic component has a planar, optically active region. The thermoelectric component has at least one thermoelectrically sensitive section, wherein the thermoelectrically sensitive section has a first electrical conductivity at a first temperature and a second electrical conductivity at a second temperature, and wherein the thermoelectrically sensitive section is thermally connected to the optoelectronic component in a planar fashion. The thermoelectric component is formed as a temperature sensor and/or thermogenerator.

Abstract: An organic optoelectronic component and a method for operating the organic optoelectronic component are disclosed. In an embodiment an organic optoelectronic component includes at least one organic light emitting element, at least one first organic light detecting element including at least one first organic light detecting layer, and at least one second organic light detecting element including at least one second organic light detecting layer, wherein the at least one organic light emitting element, the at least one first organic light detecting element and the at least one second light detecting element are arranged laterally on a common substrate, wherein the at least one first organic light detecting element is configured to detect ambient light, and wherein the at least one second organic light detecting layer of the at least one second organic light detecting element is arranged between two non-transparent layers.

Abstract: A light-emitting component may include: an electrically active region, including a first electrode, a second electrode, an organic functional layer structure between the first electrode and the second electrode, a cover arranged above the electrically active region, and a layer structure arranged between the cover and the electrically active region. The component may have at least one layer having a refractive index which is less than the refractive index of the cover.

Abstract: Various embodiments may relate to an optoelectronic component, including a glass substrate, a glass layer on the glass substrate, and encapsulation, which includes a glass fit, wherein the glass frit is arranged on the glass layer. The glass frit is fastened on the glass substrate by the glass layer. The glass layer is configured as an adhesion promoter for the glass frit on the glass substrate. The glass frit is configured in such a way that a laterally hermetically tight seal of the optoelectronic component is formed by the glass frit.

Abstract: A method for producing an optoelectronic component may include forming a first electrode on a substrate, forming an organic functional layer structure on the first electrode; forming a second electrode on the organic functional layer structure, forming at least one contact for making contact with the first and/or second electrode, forming an encapsulation layer above the layer structure and the contact, removing the encapsulation layer above the contact with the aid of an anisotropic etching method, and cooling the substrate during the anisotropic etching method.

Abstract: A light-emitting component may include: a first electrode; an organic electroluminescent layer structure on or over the first electrode; a second translucent electrode on or over the organic electroluminescent layer structure; and a mirror layer structure on or over the second electrode, wherein the mirror layer structure has a lateral thermal conductance of at least 1*10?3 W/K.

Abstract: In at least one embodiment of the organic light-emitting diode (1), the latter comprises a radiation-permeable carrier (2). On the carrier (2) there is mounted at least one organic active layer (3) provided for the generation of radiation. Also mounted on the carrier (4) is a plurality of liquid lenses (4). In the switched-off state of the active layer (3), the organic light-emitting diode (1) has in respect of visible light a transmittance of at least 0.55 and is pellucid. In the switched-on state of the active layer (3), the liquid lenses (4) are configured for increasing the light outcoupling efficiency of radiation out of the light-emitting diode (1) and the light-emitting diode (1) appears turbid.

Abstract: A light source device (100), comprising: a light source (200); an input terminal (108) coupled to the light source (200) for the supply of input voltage; an output terminal (108) coupled to the light source (200) for providing an output voltage; a first bridging terminal (114) and a second bridging terminal (114); and a printed circuit board (102) coupled to the light source (200); wherein the printed circuit board (102) has at least one conductor track (402) coupled to the first bridging terminal (114) and the second bridging terminal (114) for guiding an electrical potential from the first bridging terminal (114) to the second bridging terminal (114) in a manner that bridges the light source (200).

Abstract: A storage vessel is provided for starting material for producing a layer on a substrate by means of a growth process in a coating installation. The storage vessel has an internal volume for the starting material, in which there is a temperature-compensating material which is inert with respect to the starting material. Furthermore, a coating installation having a storage vessel is specified.

Abstract: A bi- or polynuclear metal complex of a metal of groups Vb/VIb/VIIb (IUPAC groups 5-7), has a ligand of the structure (a), wherein R1 and R2, independently of each other, can be oxygen, sulfur, selenium, NH, or NR4, wherein R4 is selected from alkyls and aryls and can be bonded to R3; and R3 is selected from alkyls, long-chain alkyls, alkoxys, long-chain alkoxys, cycloalkyls, haloalkyls, aryls, arylenes, haloaryls, heteroaryls, heteroarylenes, heterocycloalkylenes, heterocycloalkyls, haloheteroaryls, alkenyls, haloalkenyls, alkynyls, haloalkynyls, ketoaryls, haloketoaryls, ketoheteroaryls, ketoalkyls, haloketoalkyls, ketoalkenyls, haloketoalkenyls, where one or more non-adjacent CH2 groups can be replaced, independently, with (1) —O—, —S—, —NH—, —NR°—, —SiR°R°°—, —CO—, —COO—, —OCO—, —OCO—O—, —SO2-, —S—CO—, —CO—S—, —CY1=CY2, or —C?O— in such a way that O and/or S atoms are not bonded directly to each other, or (2) aryls or heteroaryls containing 1 to 30 C atoms, as a p-type doping agent for matrix materials of

Abstract: The invention relates to an organic light-emitting component, having a substrate (1), on which an organic, functional layer stack (9) is arranged between two electrodes (2, 6, 10), of which at least one electrode (2, 6, 10) is designed to be translucent, wherein the organic, functional layer stack (9) has at least one light-emitting layer (4, 41, 42) and directly adjacent to at least one of the electrodes (2, 6, 10), a charge-producing layer (30, 50, 90), which forms a tunnel transition.

Abstract: An atomic layer deposition (ALD) coating system and a method for depositing an ALD layer in the system are disclosed. In an embodiment an ALD coating system includes a storage container for an organometallic starting material and a device having a control valve, a pressure gage, a pressure diaphragm and a first multiway valve, wherein the device is arranged downstream of the storage container, and wherein the first multiway valve is switchable between a process chamber and a collecting chamber.

Abstract: An organic light-emitting diode includes a carrier substrate, a scattering layer, a first electrode, an organic layer sequence with at least one active layer, and a second electrode wherein all the components are arranged in the stated sequence, the scattering layer has a higher average refractive index than the organic layer sequence, the first electrode has at least n or at least n+1 non-metal layers and n metal layers, n is a natural number greater than or equal to 1 or greater than or equal to 2, and the non-metal layers and the metal layers succeed one another alternately.

Abstract: A metal complex of a metal from groups 13 to 16 uses a ligand of the structure (I), where R1 and R2 can independently be oxygen, sulfur, selenium, NH or NR4, where R4 an alkyl or aryl and can be connected to R3.

Abstract: A light-emitting component arrangement may include at least one flexible printed circuit board, at least one light-emitting component coupled to the flexible printed circuit board, at least one electromechanical connecting part, wherein the connecting part is mechanically fixed to the flexible printed circuit board and is electrically coupled to the light-emitting component, and wherein the connecting part has an electromechanical connection for mechanically and electrically connecting a connecting element which is external to the printed circuit board.

Abstract: An electronic component may include an electrically active region, having a first contact pad, a second contact pad, an organic functional layer structure between the first contact pad and the second contact pad, at least one electrical terminal which is coupled to the first contact pad or to the second contact pad. The first contact pad and/or the second contact pad may include an encapsulation and an electrically conductive region. The encapsulation partly covers the electrically conductive region in such a way that a part of the first contact pad or of the second contact pad is exposed. The exposed region is completely laterally surrounded by encapsulation.

Abstract: An optoelectronic component may include a first organic functional layer structure, a second organic functional layer structure, and a charge generating layer structure between the first organic functional layer structure and the second organic functional layer structure. The charge generating layer structure includes a first electron-conducting charge generating layer, and a second electron-conducting charge generating layer. The second electron-conducting charge generating layer is formed from a single substance, and the substance of the first electron-conducting charge generating layer is a substance selected from the group of substances consisting of: HAT-CN, Cu(I)pFBz, NDP-2, NDP-9, Bi(III)pFBz, F16CuPc.

Abstract: Various embodiments may relate to an organic optoelectronic component with a layer structure for generating and separating charge carriers of a first charge carrier type and charge carriers of a second charge carrier type, the layer structure including a hole-conducting transparent inorganic semiconductor.