Abstract: A heating apparatus, a method and a system for producing semiconductor chips in a wafer assembly are disclosed.

Abstract: The invention relates to a method for producing a plurality of optoelectronic semiconductor components, including the following steps: preparing a plurality of semiconductor chips spaced in a lateral direction to one another; forming a housing body assembly, at least one region of which is arranged between the semiconductor chips; forming a plurality of fillets, each adjoining a semiconductor chip and being bordered in a lateral direction by a side surface of each semiconductor chip and the housing body assembly; and separating the housing body assembly into a plurality of optoelectronic components, each component having at least one semiconductor chip and a portion of the housing body assembly as a housing body, and each semiconductor chip not being covered by material of the housing body on a radiation emission surface of the semiconductor component, which surface is located opposite a mounting surface. The invention also relates to a semiconductor component.

Abstract: A multilayer encapsulation, a method for encapsulating and an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes a first electrode layer, an organic light-emitting layer stack abutting the first electrode layer, a second electrode layer abutting the light-emitting layer stack and a multilayer encapsulation abutting the second electrode layer, wherein the multilayer encapsulation comprises a barrier layer and a planarization layer, wherein the planarization layer abuts the second electrode layer, and wherein the planarization layer is arranged between the second electrode layer and the barrier layer.

Abstract: A sensor and a 3-D position detection system are disclosed. In an embodiment a sensor includes at least one sensor chip configured to detect radiation, at least one carrier on which the sensor chip is mounted and a cast body that is transmissive for the radiation and that completely covers the sensor chip, wherein a centroid shift of the sensor chip amounts to at most 0.04 mrad at an angle of incidence of up to at least 60°, wherein the cast body comprises a light inlet side that faces away from the sensor chip, and the light inlet side comprises side walls bounding it on all sides, wherein the side walls are smooth, planar and transmissive for the radiation, wherein a free field-of-view on the light inlet side has an aperture angle of at least 140°, and wherein the cast body protrudes in a direction away from the sensor chip beyond a bond wire.

Abstract: A radiation-emitting semiconductor component is disclosed. In an embodiment, a component includes a semiconductor layer sequence and a carrier on which the semiconductor layer sequence is arranged, wherein the semiconductor layer sequence comprises an active region configured for generating radiation, an n-conducting mirror region and a p-conducting mirror region, wherein the active region is arranged between the n-conducting mirror region and the p-conducting mirror region, and wherein the p-conducting mirror region is arranged closer to the carrier than the active region.

Abstract: A phosphor is specified. The phosphor has the general molecular formula: (MA)a(MB)b(MC)c(MD)d(TA)e(TB)f(TC)g(TD)h(TE)i(TF)j(XA)k(XB)l(XC)m(XD)n:E. In this case, MA is selected from a group of monovalent metals, MB is selected from a group of divalent metals, MC is selected from a group of trivalent metals, MD is selected from a group of tetravalent metals, TA is selected from a group of monovalent metals, TB is selected from a group of divalent metals, TC is selected from a group of trivalent metals, TD is selected from a group of tetravalent metals, TE is selected from a group of pentavalent elements, TF is selected from a group of hexavalent elements, XA is selected from a group of elements which comprises halogens, XB is selected from a group of elements which comprises O, S and combinations thereof, -E=Eu, Ce, Yb and/or Mn, XC=N and XD=C. The following furthermore hold true: a+b+c+d=t; e+f+g+h+i+j=u; k+l+m+n=v; a+2b+3c+4d+e+2f+3g+4h+5i+6j?k?2l?3m?4n=w; 0.8?t?1; 3.5?u?4; 3.5?v?4; (?0.2)?w?0.

Abstract: An optoelectronic component is disclosed. In an embodiment an optoelectronic component includes a semiconductor chip configured to emit radiation and a conversion element including quantum dots, the conversion element configured to convert a wavelength of the radiation, wherein each quantum dot includes a wavelength-converting core and an inorganic encapsulation, wherein inorganic encapsulations form a matrix material of at least adjacent quantum dots, and wherein the adjacent quantum dots have a distance of at least 10 nm.

Abstract: An optoelectronic semiconductor component includes a primary light source including a carrier and a semiconductor layer sequence mounted thereon and configured to generate primary light, and at least one conversion unit of at least one semiconductor material adapted to convert the primary light into at least one secondary light, wherein the semiconductor layer sequence and the converter unit are separate elements, the semiconductor layer sequence includes a plurality of pixels, the pixels are configured to be controlled electrically independently of each other, the carrier includes a plurality of control units configured to drive the pixels, all pixels of a first group are free of a conversion unit and are configured to emit the primary light, all pixels of a second group of pixels include exactly one conversion unit each and are configured to emit the at least one secondary light.

Abstract: Disclosed is a conversion element (1) comprising an active region (13) that is formed by a semiconductor material and includes a plurality of barriers (131) and quantum troughs (132), a plurality of first structural elements (14) on a top face (la) of the conversion element (1), and a plurality of second structural elements (15) and/or third structural elements (16) which are arranged on a face of the active region (13) facing away from the plurality of first structural elements (14). Also disclosed is a method for producing a conversion element of said type.

Abstract: In an embodiment a method includes forming a semiconductor layer sequence on a growth substrate, applying a silicon oxide layer to a surface of the semiconductor layer sequence facing away from the growth substrate, applying a first metal layer to the silicon oxide layer, wherein the first metal layer includes gold, platinum, copper or silver, providing a silicon substrate and applying a second metal layer formed of the same material as the first metal layer to the silicon substrate, bonding the semiconductor layer sequence to the silicon substrate by direct bonding of the first metal layer to the second metal layer, wherein the first metal layer and the second metal layer are brought into contact at a temperature in a range of 150° C. to 400° C. so that they form a metal bonding layer and detaching the growth substrate from the semiconductor layer sequence.

Abstract: A semiconductor radiation source includes at least one semiconductor chip that generates radiation; and at least one capacitor body, wherein the semiconductor chip and the capacitor body are stacked on top of each other, the semiconductor chip directly electrically connects in a planar manner to the capacitor body, the semiconductor chip is a ridge waveguide laser, and a ridge waveguide of the semiconductor chip is arranged on a side of the semiconductor chip facing away from the capacitor body.

Abstract: An arrangement that illuminates and records a moving scene, including a light source that illuminates the moving scene, a control device that operates the light source, and a camera that records the moving scene, wherein the light source includes a plurality of pixels, each of which is configured to illuminate an area of the moving scene, the control device is configured to operate the pixels, and the light source includes at least one semiconductor component including at least one semiconductor chip containing two or more of the plurality of pixels.

Abstract: In an embodiment a component includes at least two component parts configured to generate electromagnetic radiation, two encapsulations and a one-piece carrier frame having a plurality of openings, each opening in form of a through-hole, wherein the component parts are arranged in different openings such that a respective component part is laterally spaced apart from inner walls of an associated opening, wherein each component part is enclosed in lateral directions by one of the encapsulations such that the component parts are mechanically connected to the carrier frame via the encapsulations thereby forming a self-supporting and mechanically stable unit, wherein the carrier frame comprises a casting material, the casting material being a castable silicone, a resin or a plastic material, and wherein the two encapsulations arranged in the two openings of the carrier frame have different materials or different fluorescents.

Abstract: A phosphor combination may include a first phosphor and a second phosphor. The second phosphor may be a red-emitting quantum dot phosphor. The phosphor combination may optionally include a third phosphor that is a red-emitting phosphor with the formula (MB) (TA)3-2x(TC)1+2xO4-4xN4x:E. A conversion element may include the phosphor combination. An optoelectronic device may include the phosphor combination and a radiation-emitting semiconductor chip.

Abstract: An electronic component includes a lead frame; a semiconductor chip arranged above the lead frame; and a connection layer sequence arranged between the lead frame and the semiconductor chip, wherein the connection layer sequence includes a first intermetallic layer including gold and indium or gold, indium and tin, a second intermetallic layer including indium and a titanium compound, indium and nickel, indium and platinum or indium and titanium, and a third intermetallic layer including indium and gold.

Abstract: An optoelectronic semiconductor chip may include an active region configured to emit electromagnetic radiation during operation of said optoelectronic semiconductor chip. The optoelectronic semiconductor chip comprises conversion elements arranged to convert the wavelength of the electromagnetic radiation emitted by the active region during operation, and at least one barrier at least partially impermeable to the electromagnetic radiation emitted by the active region. The barrier is disposed in a lateral direction between the conversion elements, the lateral direction being parallel to the main extension plane of the semiconductor body, and the barrier extending transversely to the lateral direction. The active region has at least two emission regions which can be driven separately from each other, and each of the conversion elements is disposed in a radiation direction of the electromagnetic radiation emitted from one of the emission regions.

Abstract: In one embodiment, the optoelectronic semiconductor component comprises at least one semiconductor chip for generating a primary radiation, and also an optical body disposed optically downstream of the semiconductor chip. A reflector surrounds the optical body laterally all around in a positively locking manner and is configured for reflecting the primary radiation and visible light. The optical body has a base surface facing the semiconductor chip and an exit surface facing away from the semiconductor chip. The optical body tapers in a direction away from the semiconductor chip. A quotient of the base surface and a height of the optical body is between 1 mm and 30 mm inclusive.

Abstract: A photonic gas sensor and a method for producing a photonic gas sensor are disclosed. In an embodiment a photonic gas sensor includes a component housing with at least one cavity, a radiation-emitting semiconductor chip arranged in the cavity and configured to transmit electromagnetic radiation in a first wavelength range, a radiation-detecting semiconductor chip arranged in the cavity and configured to detect electromagnetic radiation in a second wavelength range and an active sensor element having a fluorescent dye configured to emit electromagnetic radiation in the second wavelength range upon being excited by electromagnetic radiation in the first wavelength range, wherein an intensity of the emitted electromagnetic radiation in the second wavelength range changes reversibly in presence of a gas to be detected.

Abstract: An optoelectronic semiconductor device includes a semiconductor body in which an active layer configured to generate or detect electromagnetic radiation, a first interlayer and a p-conducting contact layer are formed, and a connection layer applied to the semiconductor body, wherein the contact layer is disposed between the first interlayer and the connection layer and adjoins the connection layer, the active layer is arranged on a side of the first interlayer remote from the contact layer, the first interlayer and the contact layer are based on a nitride compound semiconductor, the contact layer is doped with a p-dopant, the contact layer has a thickness of at most 50 nm, and the contact layer includes a lower aluminum content than the first interlayer.

Abstract: An irradiation unit is disclosed that includes a pump radiation source for emitting pump radiation in the form of a beam, a conversion element for at least partially converting the pump radiation into conversion radiation, and a support on which the conversion element is situated. The support accommodates a through-hole through which the beam including the pump radiation is incident on an incident surface of the conversion element, the though-hole being laterally delimited by an inner wall face of the support, at least one portion of the face tapering in the direction of the incident surface. During operation, the pump radiation conducted in the beam is at least intermittently at least in part, incident on the inner wall face of the support and is reflected thereby onto the incident surface.