Abstract: The invention relates to an embodiment in which the textile component comprises at least one flexible thread that can be woven. A plurality of semiconductor columns are attached in or on the thread and are configured to generate radiation. Furthermore, a plurality of electrical lines are located in or on the thread, by means of which lines the semiconductor columns are electrically contacted. An average height (H) of the semiconductor columns in a direction transverse to a longitudinal direction (L) of the thread is at most 20% of an average diameter (D) of the thread.

Abstract: A light source is specified which comprises a planar semiconductor light source comprising a plurality of independently operable single emitters, wherein, during operation, each of the single emitters emits light via respective single luminous surface. Furthermore, the light source has a common optical element which is arranged directly downstream of the single emitters and which is embodied and intended to direct light from different single emitters into different solid angle regions, wherein the single emitters are arranged defocused with respect to the optical element and the individual light surfaces are imaged in a blurred manner by the optical element.

Abstract: The invention relates to a method for producing an optoelectronic semiconductor chip comprising the following steps: providing a semiconductor body (1) having a radiation-permeable surface (1a), and introducing structures (2) into the semiconductor body (1) on the radiation-permeable surface (1a), wherein the structures (2) are quasi-regular.

Abstract: A light emitting device for optically reproducing a coded information includes a plurality of optical components. Each of the components is configured to emit light. The combination of the light emitted from the optical components provides coded information.

Abstract: A semiconductor display may include a multiplicity of semiconductor pillars as well as first contact strips and second electrical contact strips. The semiconductor pillars each comprise a semiconductor core of a first conductivity type and a semiconductor shell of a second conductivity type different from the first conductivity type, as well as an active layer between them for radiation generation. The semiconductor pillars each comprise an energization shell which is applied onto the respective semiconductor shell for energization. The semiconductor pillars can be electrically driven independently of one another individually or in small groups by means of the first and second electrical contact strips.

Abstract: The invention relates to a component comprising a first part, a second part, a housing body, and a first electrode, wherein the housing body encloses the first electrode in lateral directions at least in some regions. The first electrode has a front face and a rear face facing away from the front face, and the front and rear faces are free of a cover produced by a material of the housing body at least in some regions. The first part is arranged on the front face, and the second part is arranged on the rear face, and both the first and second parts are connected to the first electrode in an electrically conductive manner. The first electrode is designed to be continuous and is arranged between the first part and the second part in the vertical direction. Also described is a method for producing the component.

Abstract: In one embodiment, an optoelectronic semiconductor device includes at least two lead frame parts and an optoelectronic semiconductor chip which is mounted in a mounting region on one of the lead frame parts. The lead frame parts are mechanically connected to one another via a casting body. The semiconductor chip is embedded in the cast body. In the mounting region the respective lead frame part has a reduced thickness. An electrical line is led over the cast body from the semiconductor chip to a connection region of the other of the lead frame parts. In the connection region, the respective lead frame part has the full thickness. From the connection region to the semiconductor chip the electrical line does not overcome any significant difference in height.

Abstract: A lighting device is specified. The lighting device comprises a phosphor having the general molecular formula (MA)a(MB)b(MC)c(MD)d(TA)e(TB)f(TC)g(TD)h(TE)i(TF)j(XA)k(XB)l(XC)m(XD)n:E. In this case, MA is selected from a group of monovalent metals, MB is selected from a group of divalent metals, MC is selected from a group of trivalent metals, MD is selected from a group of tetravalent metals, TA is selected from a group of monovalent metals, TB is selected from a group of divalent metals, TC is selected from a group of trivalent metals, TD is selected from a group of tetravalent metals, TE is selected from a group of pentavalent elements, TF is selected from a group of hexavalent elements, XA is selected from a group of elements which comprises halogens, XB is selected from a group of elements which comprises O, S and combinations thereof, XC=N and XD=C and E=Eu, Ce, Yb and/or Mn. The following furthermore hold true: a+b+c+d=t; e+f+g+h+i+j=u; k+l+m+n=v; a+2b+3c+4d+e+2f+3g+4h+5i+6j?k?2l?3m?4n=w; 0.8?t?1; ?3.

Abstract: An optoelectronic semiconductor chip may include a semiconductor body, a first and second contact element, a chip carrier, an electrically conductive contact layer, an electrically conductive supply layer, an insulating layer between the contact layer and the supply layer, and at least one electrically conductive feed-through element embedded in the insulating layer. The feed-through element(s) may electrically connect the supply layer to the contact layer. A quantity and/or size of the feed-through elements may be greater on a second side of the semiconductor body opposite to the first side than on the first side.

Abstract: A carrier and a component are disclosed. In an embodiment a component includes a semiconductor chip including a substrate and a semiconductor body arranged thereon and a metallic carrier having a coefficient of thermal expansion which is at least 1.5 times greater than a coefficient of thermal expansion of the substrate or of the semiconductor chip, wherein the semiconductor chip is attached to a mounting surface of the metallic carrier by a connection layer such that the connection layer is located between the semiconductor chip and a buffer layer and adjoins a rear side of the semiconductor chip, wherein the buffer layer has a yield stress which is at least 10 MPa and at most 300 MPa, and wherein the substrate of the semiconductor chip and the metallic carrier of the component have a higher yield stress than the buffer layer.

Abstract: A lighting device for emitting a red total radiation may be configured such that the lighting device has a semiconductor layer sequence configured to emit electromagnetic primary radiation. A conversion element may include a first fluorescent material of the formula Sr[Al2Li2O2N2]:Eu, crystallized in the tetragonal space group P42/m. The first fluorescent material may at least partially convert the electromagnetic primary radiation into an electromagnetic secondary radiation in the red region of the electromagnetic spectrum. The conversion element may include a second fluorescent material to at least partially convert the electromagnetic primary radiation into an electromagnetic secondary radiation in the red region of the electromagnetic spectrum and/or the lighting device may include a mirror or filter arranged above the conversion element.

Abstract: A light-emitting semiconductor component may include a conversion layer, a radiation surface, and a plurality of adjacently arranged emission regions configured to be operated separately, individually and/or in groups. The conversion layer may be arranged downstream of the emission regions in the direction of radiation of the emission regions. The emission regions may be configured to emit primary radiation of a first wavelength range into the conversion layer. The conversion layer may be configured to convert at least a portion of the primary radiation into secondary radiation of a second wavelength range. Mixed radiation is configured to be emitted from the light-emitting semiconductor component at the radiation surface. The mixed radiation may include primary radiation and secondary radiation. A probability that primary radiation travelling from the emission region to the radiation surface is converted into secondary radiation may vary along the radiation surface by a maximum factor of 2.

Abstract: In one embodiment, the optoelectronic semiconductor chip (1) comprises a semiconductor layer sequence (2) with an active zone (23) for generating radiation with a wavelength of maximum intensity L. A mirror (3) comprises a cover layer (31). The cover layer (31) is made of a material transparent to the radiation and has an optical thickness between 0.5 L and 3 L inclusive. The cover layer (31) is followed in a direction away from the semiconductor layer sequence (2) by between inclusive two and inclusive ten intermediate layers (32, 33, 34, 35) of the mirror (3). The intermediate layers (32, 33, 34, 35) alternately have high and low refractive indices. An optical thickness of at least one of the intermediate layers (32, 33, 34, 35) is not equal to L/4. The intermediate layers (32, 33, 34, 35) are followed in the direction away from the semiconductor layer sequence (2) by at least one metal layer (39) of the mirror (3) as a reflection layer.

Abstract: An optoelectronic component that emits electromagnetic radiation from a radiation exit surface of the optoelectronic component includes a radiation-emitting semiconductor chip that produces electromagnetic radiation, and a marker element applied to the radiation exit surface of the optoelectronic component, the marker element including a dye substance that can be removed from the radiation exit surface using a solvent and/or is permeable to the electromagnetic radiation of the optoelectronic component, wherein the dye substance includes a resin into which fluorescent particles are introduced that convert electromagnetic radiation of a first wavelength range into electromagnetic radiation of a second wavelength range, the first wavelength range and the second wavelength range being within the ultraviolet spectral range.

Abstract: A component includes a carrier and a semiconductor body arranged on the carrier, wherein the semiconductor body includes a semiconductor layer facing away from the carrier, a further semiconductor layer facing the carrier and an optically active layer located therebetween, the carrier has a metallic carrier layer that is contiguous and mechanically stabilizes the component, the carrier includes a mirror layer disposed between the semiconductor body and the metallic carrier layer, the carrier has a compensating layer directly adjacent to the metallic carrier layer and is configured to compensate for internal mechanical strains in the component, and the compensating layer is arranged between the semiconductor body and the metallic carrier layer.

Abstract: In an embodiment a method includes providing a growth substrate comprising a growth surface formed by a planar region having a plurality of three-dimensional surface structures on the planar region, directly applying a nucleation layer of oxygen-containing AlN to the growth surface and growing a nitride-based semiconductor layer sequence on the nucleation layer, wherein growing the semiconductor layer sequence includes selectively growing the semiconductor layer sequence upwards from the planar region such that a growth of the semiconductor layer sequence on surfaces of the three-dimensional surface structures is reduced or non-existent compared to a growth on the planar region, wherein the nucleation layer is applied onto both the planar region and the three-dimensional surface structures of the growth surface, and wherein a selectivity of the growth of the semiconductor layer sequence on the planar region is targetedly adjusted by an oxygen content of the nucleation layer.

Abstract: A display includes a plurality of pixels. The pixels include at least one emitter unit. The emitter units each include a primary emitter and a secondary emitter for generating light of the same color. The secondary emitter is associated with the primary emitter of the corresponding emitter unit. The primary emitters and the secondary emitters are based on at least one semiconductor material. The emitter units each include a correction circuit. The correction circuits are each configured to be able to switch the generation of light from the primary emitter to the associated secondary emitter in case of a defect of the associated primary emitter.

Abstract: A radiation-emitting device including a radiation source, an emission surface through which radiation from the radiation source passes during operation, wherein the emission surface includes a plurality of pixels, each pixel includes a plurality of subpixels, in plan view of the emission surface, each pixel forms a partial area of the emission surface and each subpixel forms a portion of such partial area, for each pixel, at least first subpixels are operable individually and independently of one another, and all subpixels of a pixel together make up at most 50% of the area of the pixel so that in simultaneous operation of all subpixels radiation is emitted via at most 50% of the area of the pixel.

Abstract: A method of producing optical components includes providing an initial carrier including cutouts; carrying out a molding process to form transparent optical molded parts arranged in the cutouts of the initial carrier, wherein a molding compound is introduced into the cutouts of the initial carrier and the molding compound is molded and cured; and singulating the initial carrier including the optical molded parts so that separate optical components are formed that respectively include a carrier produced from the initial carrier and including a cutout, and an optical molded part arranged in the cutout.

Abstract: An optoelectronic device is specified, with a radiation-emitting semiconductor chip configured to generate electromagnetic radiation, and an active element configured to change a physical state, wherein the active element is embedded in a component of the component, and the physical change of state comprises the following: temperature change, sound generation, mechanical motion.