Abstract: In one embodiment, the optoelectronic semiconductor chip includes a semiconductor layer sequence with an active zone for generating a radiation. The semiconductor layer sequence is based on AlInGaP and/or on AlInGaAs. A metal mirror for the radiation is located on a rear side of the semiconductor layer sequence opposite a light extraction side. A protective metallization is applied directly to a side of the metal mirror facing away from the semiconductor layer sequence. An adhesion promoting layer is located directly on a side of the metal mirror facing the semiconductor layer sequence. The adhesion promoting layer is an encapsulation layer for the metal mirror, so that the metal mirror is encapsulated at least at one outer edge by the adhesion promoting layer together with the protective metallization.

Abstract: A radiation-emitting component is specified with a carrier having a cavity, a radiation-emitting semiconductor chip which is arranged on a bottom surface delimiting the cavity and which is configured to generate primary electromagnetic radiation, and a first reflector layer arranged above a top surface of the semiconductor chip, wherein the carrier is transparent in places to the primary electromagnetic radiation, and the semiconductor chip is spaced apart from at least one side surface delimiting the cavity.

Abstract: A radiation-emitting component is specified with—a carrier which has a top surface a radiation-emitting semiconductor chip arranged on the top surface of the carrier and configured to generate primary electromagnetic radiation, a first reflector layer arranged above a top surface of the semiconductor chip, and a cover body arranged between the first reflector layer and the radiation-emitting semiconductor chip, wherein a side surface of the cover body is inclined to the top surface of the carrier. Furthermore, a method for producing such a radiation-emitting component is specified.

Abstract: A radiation-emitting semiconductor device (1) is specified, comprising a semiconductor body (2) having an active region (20) provided for generating radiation, a carrier (3) on which the semiconductor body is arranged and an optical element (4), wherein the optical element is attached to the semiconductor body by a direct bonding connection. Furthermore, a method for producing of radiation-emitting semiconductor devices is specified.

Abstract: A semiconductor device may include a conductive layer over a semiconductor body and a first stress compensation layer adjacent to the conductive layer. The stress compensation layer may include a defined first stress.

Abstract: A method for producing an optoelectronic component by providing a semiconductor layer sequence on a substrate where the semiconductor layer sequence is configured to emit radiation. The method may further include applying a contact layer to the semiconductor layer sequence where the contact layer has a layer thickness of at most 10 nm. The method may further include applying a reflective layer to the contact layer and applying a barrier layer directly to the reflective layer.

Abstract: In at least one embodiment of the method of operating a laser device (100) having a plurality of laser diodes (1) which can be controlled independently of one another, wherein controlled laser diodes are each operated with an operating current (I), and wherein each laser diode can be operated for a proper operation in a nominal current range (?I), a step A) is carried out in which an input current (I_0) or an input voltage (U_0) is applied to the laser device. Furthermore, a step B) is carried out in which a characteristic value is determined that is representative of a number N of laser diodes that can be operated in the respective nominal current range with the input current applied in step A) or with the input voltage applied in step A). If the characteristic value is representative of N?1, M laser diodes are controlled in a step C) in such a way that the M laser diodes are each operated in the nominal current range, wherein 1?M?N is selected.

Abstract: An electromagnetic radiation emitting device and a method for applying a converter layer to an electromagnetic radiation emitting device are disclosed. In an embodiment, a method includes applying converter elements to a surface of a carrier, applying the converter elements to an electromagnetic radiation emitting device by applying the carrier to the electromagnetic radiation emitting device such that the surface of the carrier with the applied converter elements faces the electromagnetic radiation emitting device and forming a converter layer on the electromagnetic radiation emitting device by depositing a plurality of thin layers on the converter elements using an atomic layer deposition process.

Abstract: Provided is an optoelectronic semiconductor chip including a semiconductor layer sequence having an active layer, a doped current spreading layer and an output coupling layer, which are arranged one above the other in this order. The active layer generates primary radiation during intended operation. The current spreading layer includes a larger lateral electrical conductivity than the output coupling layer. The output coupling layer includes output coupling structures for coupling out radiation on an exit side facing away from the active layer. The output coupling layer includes a lower absorption coefficient for primary radiation than the current spreading layer.

Abstract: A radiation-emitting semiconductor device (1) is specified, comprising a semiconductor body (2) having an active region (20) provided for generating radiation, a carrier (3) on which the semiconductor body is arranged and an optical element (4), wherein the optical element is attached to the semiconductor body by a direct bonding connection. Furthermore, a method for producing of radiation-emitting semiconductor devices is specified.

Abstract: A method for producing a semiconductor component may include applying a semiconductor chip over a first main surface of an insulating substrate, thinning a second main surface of the insulating substrate where the second main surface has a roughness of more than 300 nm after thinning, applying a smoothing metal layer over the second main surface of the insulating substrate, and smoothing the smoothing metal layer. A semiconductor component may include a semiconductor chip, an insulating substrate where the semiconductor chip is arranged over a first main surface of the insulating substrate and a second main surface of the insulating substrate has a roughness Ra of more than 300 nm, and a smoothing metal layer over the second main surface.

Abstract: An optoelectronic semiconductor body is provided with a layer stack with an active region which is configured to emit electromagnetic radiation and which includes a main extension plane, wherein the layer stack comprises side walls which extend transversely to the main extension plane of the active region, and the side walls are covered at least in places with a cover layer which is formed with at least one semiconductor material. In addition, an arrangement of a plurality of optoelectronic semiconductor bodies and a method for producing an optoelectronic semiconductor body are provided.

Abstract: A laser diode chip is described, comprising including: an n-type semiconductor region, a p-type semiconductor region, and an active layer arranged between the n-type semiconductor region and the p-type semiconductor region, an n-type contact and a p-type contact, at least one heating element arranged on a side of the laser diode chip facing the p-type semiconductor region, the heating element functioning as a resistance heater, and at least one metallic seed layer, wherein the heating element comprises a part of the seed layer, and wherein the p-type contact is arranged on a further part of the seed layer.

Abstract: In an embodiment an optoelectronic lighting device includes a carrier, exactly one light-emitting optoelectronic semiconductor component, wherein the semiconductor component has a light emission area on at least one surface side, and wherein the semiconductor component is arranged on an upper side of the carrier, at least one functional layer arranged above the light emission area and/or adjacent to the light emission area and an edging for the functional layer, wherein the edging surrounds the functional layer when viewed in a circumferential direction, the circumferential direction being parallel to the upper side of the carrier around the functional layer, and wherein the edging is formed of a transparent material.

Abstract: In an embodiment a radiation-emitting semiconductor chip includes a semiconductor body having an active region configured to generate radiation, a first contact layer having a first contact area and a first contact finger structure connected to the first contact area, a second contact layer having a second contact area and a second contact finger structure connected to the second contact area, a current distribution layer electrically conductively connected to the first contact layer, a connection layer electrically conductively connected to the first contact layer via the current distribution layer and an insulation layer, wherein the insulation layer is arranged in places between the connection layer and the current distribution layer, wherein the insulation layer has at a plurality of openings, in which the connection layer and the current distribution layer adjoin one another, and wherein edge regions of the insulation layer includes more openings than a central region of the insulation layer.

Abstract: In an embodiment, the semiconductor device is surface mountable and comprises a light emitting semiconductor chip which comprises electrical contact pads. An opaque base body laterally surrounds the semiconductor chip. An electrical fanning layer contains electrical conductor tracks. Electrical connection pads are used for external electrical contacting of the semiconductor device. The contact pads and the connection pads are located on different sides of the fanning layer. The contact pads are electrically connected to the associated connection pads by means of the fanning layer. The connection pads are expanded relative to the contact pads.

Abstract: In one embodiment, the optoelectronic semiconductor chip includes a semiconductor layer sequence with an active zone for generating a radiation. The semiconductor layer sequence is based on AlInGaP and/or on AlInGaAs. A metal mirror for the radiation is located on a rear side of the semiconductor layer sequence opposite a light extraction side. A protective metallization is applied directly to a side of the metal mirror facing away from the semiconductor layer sequence. An adhesion promoting layer is located directly on a side of the metal mirror facing the semiconductor layer sequence. The adhesion promoting layer is an encapsulation layer for the metal mirror, so that the metal mirror is encapsulated at least at one outer edge by the adhesion promoting layer together with the protective metallization.

Abstract: A semiconductor laser diode is specified, the semiconductor laser diode includes a semiconductor layer sequence having an active layer having a main extension plane and which, in operation, is configured to generate light in an active region and emit light via a light-outcoupling surface, the active region extending from a back surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane, the semiconductor layer sequence having a surface region on which a first cladding layer is applied in direct contact, the first cladding layer having a transparent material from a material system different from the semiconductor layer sequence, and the first cladding layer being structured and having a first structure.

Abstract: In an embodiment a sensor device includes a housing having at least a first cavity and a second cavity, at least one light emitter arranged in the first cavity and at least one light detector arranged in the second cavity, wherein each of the cavities has an opening at an underside of the housing so that light from the respective cavity is passable to the outside and/or from the outside into the respective cavity, wherein each of the cavities includes a bottom opposite the underside of the housing and a peripheral side wall extending between the bottom and the underside of the housing, wherein at least one of the cavities is filled with an absorbing material from the bottom to a specified height, and with a transparent material from the specified height to a height of the underside of the housing, and wherein the light detector is arranged on the bottom of the second cavity.

Abstract: The invention relates to an optoelectronic component having: a carrier; an optoelectronic semiconductor chip; an insulation layer, which has an electrically insulating material; and a first contact layer, which has an electrically conductive material. According to the invention, the insulation layer is arranged on the carrier and has a cavity; the semiconductor chip is arranged in the cavity; the first contact layer is arranged between the semiconductor chip and the carrier and between the insulation layer and the carrier; and the first contact layer has at least one interruption, such that the carrier is free of the first contact layer at least in some parts in the region of the cavity.