Abstract: A converter for an optoelectronic component, an optoelectronic component, a method for forming a converter for an optoelectronic component and a material for a reflector of an optoelectronic component are disclosed. In an embodiment, a converter includes a conversion element for converting a wavelength of electromagnetic radiation which passes through at least a part of the conversion element and a reflector, wherein the reflector includes a reflector material which includes MgF2 and/or an inorganic material as a matrix material in which a plurality of particles is embedded, wherein a refractive index of the matrix material amounts to at least 1 and at most 2, and wherein a refractive index of the particles amounts to at least 1.5.

Abstract: What is specified is a method for producing a coating comprising the following steps: —providing a material source having a top surface and a main coating direction, —providing a substrate holder having a top surface, —providing at least one base layer, having a coating surface remote from the substrate holder, on the top surface of the substrate, —attaching the substrate holder to a rotating arm, which has a length along a main direction of extent of the rotating arm, —setting the length of the rotating arm in such a manner that a normal angle (?) throughout the method is at least 30° and at most 75°, —applying at least one coating to that side of the base layer which has the coating surface by means of the material source, wherein—during the coating process with the coating, the substrate holder is rotated about a substrate axis of rotation running along the main direction of extent of the rotating arm.

Abstract: An organic light-emitting diode comprising an organic layer sequence, a radiation exit area and an encapsulation. The organic layer sequence comprises at least one radiation-emitting region which generates electromagnetic radiation in the spectral range from infrared radiation to UV radiation during operation. The radiation exit area is structured, so that the electromagnetic radiation has a directional emission profile. The encapsulation forms a seal of the organic layer sequence against environmental influences.

Abstract: An optoelectronic device with a mixture including silicone and a fluoro-organic additive is disclosed. In an embodiment the device includes at least one radiation-emitting or radiation-detecting semiconductor and a mixture including silicone and a fluoro-organic additive. The mixture may be a component of at least one of the following elements: a package body element surrounding the at least one semiconductor at least in places, a radiation-guiding element arranged in a beam path of a radiation emitted by the semiconductor or detected by the semiconductor, a heat-conducting element configured to conduct heat emitted by the semiconductor or received by the semiconductor, or an adhesive element.

Abstract: A method for producing a converter element, a converter element and a light emitting device are disclosed. In an embodiment a method for producing a converter element providing at least one phosphor and a liquid polysiloxane resin and preparing a cured polysiloxane powder from a first fraction of the liquid polysiloxane resin. The method further includes preparing a mixture including the at least one phosphor, the cured polysiloxane powder and a second fraction of the liquid polysiloxane resin, casting and curing the mixture to a cured layer and singulating the cured layer.

Abstract: The invention relates, in one embodiment, to a method for producing light-emitting semiconductor components, which method comprises the following steps: A) providing a glass capillary (2) composed of a glass material, B) filling the glass capillary (2) with luminescent substances (3), C) sealing the glass capillary (2) in a sealing region (22) by melting the glass material such that the glass capillary (2) is closed by the glass material itself, and D) attaching the sealed glass capillary (2) to a light-emitting diode chip (4) such that the radiation emitted by the light-emitting diode chip (4) is converted into visible light by the luminescent substances (3) during operation, wherein in step C) a distance between the sealing region (22) and the luminescent substances (3) is at most 7 mm, and wherein the different luminescent substances (3) are separated from each other along a longitudinal axis (L) of the glass capillary (2).

Abstract: An optoelectronic semiconductor component is specified that has a semiconductor chip having a main side, the main side comprising a plurality of emission fields that are arranged next to one another. The emission fields are individually and independently actuatable and, during operation, they are each used to couple radiation out of the semiconductor chip. The main side has reflective partitions mounted on it that are arranged between adjacent emission fields and at least partially surround the emission fields in a plan view of the main side. In addition, the main side has a conversion element mounted on it, having an underside, which faces the semiconductor chip, and an averted top. The partitions are formed from a different material from the semiconductor material of the semiconductor chip and jut out from the semiconductor chip in a direction away from the main side.

Abstract: An electronic component, an optoelectronic component, and a component arrangement are disclosed. In an embodiment the electronic component includes an electronic semiconductor chip and a molded body, wherein the molded body covers at least one side face of the electronic semiconductor chip, wherein a surface of the electronic semiconductor chip is at least partly not covered by the molded body, wherein the molded body includes a first side face with a peg, and wherein the molded body includes a second side face with a groove matching the peg.

Abstract: Quantum dot polymer composites for on-chip light emitting diode applications are described. In an example, a composite for on-chip light emitting diode application includes a polymer matrix, a plurality of quantum dots dispersed in the polymer matrix, and a base dispersed in the polymer matrix.

Abstract: A wavelength conversion element comprising a crosslinked matrix and at least one phosphor dispersed in said matrix, wherein said matrix is made from a precursor material comprising a precursor having a structure chosen from one of the generic formulae is provided. Further, a light emitting device comprising a wavelength conversion element and a method for producing a wavelength conversion element are provided.

Abstract: A light-emitting semiconductor chip and a method for producing a light-emitting semiconductor chip are disclosed. In an embodiment a light-emitting chip includes a semiconductor body having an active region designed to generate light, a dielectric mirror including an electrically insulating material and a first metallic mirror including an electrically conductive material, wherein the semiconductor body expands towards a light exit side, wherein the dielectric mirror is arranged on a side of the semiconductor body facing away from the light exit side, wherein the first metallic mirror is arranged on a side of the dielectric mirror facing away from the semiconductor body, wherein the first metallic mirror electrically contacts the semiconductor body through at least one opening in the dielectric mirror, and wherein the dielectric mirror, apart from the at least one opening, completely covers the semiconductor body on the side facing away from the light exit side.

Abstract: A method for producing an optoelectronic semiconductor device and an optoelectronic semiconductor device are disclosed. In an embodiment the method includes providing a semiconductor layer sequence including a light-emitting and/or light-absorbing active zone and a top face downstream of the active zone in a stack direction extending perpendicular to a main plane of extension of the semiconductor layer sequence, applying a layer stack onto the top face, wherein the layer stack includes an oxide layer containing indium, and an intermediate face downstream of the top face in the stack direction and applying a contact layer onto the intermediate face, wherein the contact layer includes indium tin oxide, and wherein the layer stack is, within the bounds of manufacturing tolerances, free of tin.

Abstract: An optoelectronic semiconductor chip (10) is specified, comprising a p-type semiconductor region (4), an n-type semiconductor region (6), and an active layer arranged between the p-type semiconductor region (4) and the n-type semiconductor region (6), said active layer being designed as a multiple quantum well structure (5), wherein the multiple quantum well structure (5) comprises quantum well layers (53) and barrier layers (51), wherein the barrier layers (51) are doped, and wherein undoped intermediate layers (52, 54) are arranged between the quantum well layers (53) and the barrier layers (51). Furthermore, a method for producing the optoelectronic semiconductor chip (10) is specified.

Abstract: In various embodiments, a backlighting device is provided. The backlighting device may include a plurality of semiconductor light sources arranged in a plane and serving for generating light radiation, and a side wall arranged laterally with respect to the semiconductor light sources, where the side wall is inclined with respect to the plane predefined by the semiconductor light sources, and wherein the side wall is retroreflective at a side which can be irradiated with light radiation of the semiconductor light sources.

Abstract: An optoelectronic semiconductor component has a semiconductor body, wherein the semiconductor body includes a semiconductor layer sequence having a first semiconductor layer, a second semiconductor layer and an active region that generates or receives radiation disposed between the first semiconductor layer and the second semiconductor layer; the semiconductor body has a functional region in which the first semiconductor layer electrically conductively connects to a first terminal layer and the second semiconductor layer electrically conductively connects to a second terminal layer; an isolating layer is arranged on a side of the first terminal layer facing away from the semiconductor body; an interruption is formed in the isolating layer which at least locally delimits an inner subregion of the isolating layer in a lateral direction; the interruption encloses the functional region in the lateral direction; and in a plan view of the semiconductor component, the interruption overlaps with the active region.

Abstract: The invention relates to a method for structuring a nitride layer (2), comprising the following steps: A) providing a nitride layer (2) formed with silicon nitride of a first type, B) defining regions (40) of said nitride layer (2) to be transformed, and C) inserting the nitride layer (2) into a transformation chamber for the duration of a transformation period, said transformation period being selected such that—at least 80% of the nitride layer (2) regions (40) to be transformed are transformed into oxide regions (41) formed with silicon oxide, and—remaining nitride layer (2) regions (21) remain at least 80% untransformed.

Abstract: An optoelectronic semiconductor component is disclosed, comprising: a semiconductor body (1) having a semiconductor layer sequence (2) with a p-type semiconductor region (3), an n-type semiconductor region (5), and an active layer (4) arranged between the p-type semiconductor region (3) and the n-type semiconductor region (5); a support (10) having a plastic material and a first via (11) and a second via (12); a p-contact layer (7) and an n-contact layer (8), at least some regions of which are arranged between the support (10) and the semiconductor body (1), wherein the p-contact layer (7) connects the first via (11) to the p-type semiconductor region (3) and the n-contact layer (8, 8A) connects the second via (12) to the n-type semiconductor region (5); and an ESD protection element (15) which is arranged between the support (10) and the semiconductor body (1), wherein the ESD protection element (15) is electrically conductively connected to the first via (11) and to the second via (12), and wherein a forwar

Abstract: A semiconductor component and an illumination device is disclosed. In an embodiment the semiconductor component includes a semiconductor chip configured to generate a primary radiation having a first peak wavelength and a radiation conversion element arranged on the semiconductor chip. The radiation conversion element includes a quantum structure that converts the primary radiation at least partly into secondary radiation having a second peak wavelength and a substrate that is transmissive to the primary radiation.

Abstract: A module for a video wall includes a first light emitting chip of an image pixel connecting to a first power line by a first electrical terminal, the first light emitting chip connects to a third power line by a second electrical terminal, a second light emitting chip of the image pixel connects to a second power line by the first electrical terminal, the second light emitting chip of the image pixel connects to a fourth power line by the second electrical terminal, the first and/or the second power line are/is a surface metallization, including contact sections, a light emitting chip is arranged on a contact section, at least between contact sections of a first and of a second power line an insulation layer is provided on a carrier, the insulation layer includes openings above the contact sections, and the light emitting chips are arranged in the openings.

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment the optoelectronic component includes a layer structure having an active zone for producing electromagnetic radiation, wherein the active zone is arranged in a first plane, wherein a recess is introduced into the surface of the layer structure, wherein the recess adjoins an end surface of the component, wherein the end surface is arranged in a second plane, wherein the second plane is arranged substantially perpendicularly to the first plane, wherein the recess has a bottom surface and a lateral surface wherein the lateral surface is arranged substantially perpendicularly to the end surface, wherein the lateral surface is arranged tilted at an angle not equal to 90° to the first plane of the active zone, and wherein the bottom surface is arranged in the region of the first plane of the active zone.