Abstract: In one embodiment, the light-emitting diode module comprises a carrier and a plurality of light-emitting diodes. Thereby, several types of light-emitting diodes are present. The light-emitting diodes can be controlled individually or in groups electrically independently of one another. The light-emitting diodes each comprise a first and a second electrical contact. The carrier comprises several electrically conductive main layers, between each of which there is an electrically insulating intermediate layer. The contacts of the light-emitting diodes are attached to a carrier upper side on one of the first main layers. Starting from the first contacts, electrical through-connections are each connected directly to a carrier underside with a last main layer of the main layers. Starting from the second contacts, electrical through-connection each terminate at a penultimate main layer of the main layers, wherein the penultimate main layer is located inside the carrier.

Abstract: In an embodiment a method for producing a semiconductor device includes providing a carrier with a semiconductor component arranged on the carrier, providing a layer arrangement on the carrier, the layer arrangement adjoining the semiconductor component and comprising a first and a second flowable layer, wherein the first layer is formed on the carrier and then the second layer is formed on the first layer, wherein the first layer comprises particles, wherein a density of the first layer is greater than a density of the second layer, and wherein a lateral wetting of the semiconductor component with the first layer occurs such that the first layer comprises a first configuration comprising a curved layer surface laterally with respect to the semiconductor component, and centrifuging the carrier such that the first layer comprises a second configuration as a result, wherein the first layer cannot return to the first configuration since the second layer is arranged on the first layer.

Abstract: The invention relates to a lighting device comprising a pixelated light emitting semiconductor chip (pixelated with pixels), an electronic semiconductor chip for actuating the pixelated light emitting semiconductor chip, and a substrate. The pixelated light emitting semiconductor chip and the electronic semiconductor chip are placed next to one another on the substrate. The invention further relates to a process for manufacturing a lighting device.

Abstract: A semiconductor component and an illumination device is disclosed. In an embodiment the semiconductor component includes a semiconductor chip configured to generate a primary radiation having a first peak wavelength and a radiation conversion element arranged on the semiconductor chip. The radiation conversion element includes a quantum structure that converts the primary radiation at least partly into secondary radiation having a second peak wavelength and a substrate that is transmissive to the primary radiation.

Abstract: A method for operating an optoelectronic semiconductor device. The semiconductor device includes a first optoelectronic semiconductor chip for generating, for example, blue light, an optional second optoelectronic semiconductor chip for generating, for example, green light, and a third optoelectronic semiconductor chip for generating, for example, red light. The semiconductor device also includes a driver unit which supplies the semiconductor chips with current during operation. The third semiconductor chip is operated on the basis of a temperature-brightness characteristic curve stored in the driver unit. The temperature-brightness characteristic curve is configured for a minimum color location deviation over an intended operating temperature range, relative to at least one reference color location.

Abstract: A device for processing a multiplicity of semiconductor chips in a wafer assemblage includes an electrically conductive carrier for contacting rear contacts of the semiconductor chips, an electrically conductive film for contacting front contacts of the semiconductor chips that are situated opposite the rear contacts, and a squeegee, which is displaceable relative to the film and is configured to press a region of the film in the direction toward the carrier.

Abstract: The invention refers to a light emitting device including a semiconductor chip having a main radiation surface, which emits UV light in operation, a phosphor, which is arranged in the radiation beam of the UV light, absorbs partially the UV light, wherein the phosphor converts the UV light into visible light so that the device emits mixed light comprising the UV light as well as visible light.

Abstract: An optoelectronic module comprising at least one semiconductor laser and a photonic chip is described herein. The semiconductor laser emits a primary electromagnetic radiation which is coupled into the photonic chip. The photonic chip comprises at least one first waveguide and at least one optical Bragg reflector having a reflectivity which is modulated by an electrical modulation signal. A secondary electromagnetic radiation is coupled out of the photonic chip by means of at least one second waveguide, wherein the secondary electromagnetic radiation has a dominant wavelength which is modulated in dependence of the electrical modulation signal. Further, a method for operating an optoelectronic module and a Head-Mounted Display comprising an optoelectronic module are provided.

Abstract: An optoelectronic device and a method of producing an optoelectronic device are disclosed. In an embodiment an optoelectronic device includes components including an active layer stack, a housing and electrical contacts and at least one protective layer on a surface of at least one of the components, wherein the at least one protective layer includes a cross-linked material with a three-dimensional polysiloxane-based network.

Abstract: An optoelectronic device comprises a phosphor plate, an optoelectronic chip comprising a layer stack of a first optoelectronic semiconductor layer and a second optoelectronic semiconductor layer, a first electrode, and a second electrode. The optoelectronic chip is attached to the phosphor plate, so that the second optoelectronic semiconductor layer is arranged between the phosphor plate and the first optoelectronic semiconductor layer. The first electrode and the second electrode are arranged on a first main surface of the first optoelectronic semiconductor layer on a side remote from the phosphor plate. The second electrode directly contacts the first optoelectronic semiconductor layer.

Abstract: A method of producing a chip module includes providing a carrier; arranging semiconductor chips on the carrier; applying an electrically insulating material on the carrier; and structuring the carrier such that the chip module is provided, wherein the chip module includes separate carrier sections produced by structuring the carrier, the carrier sections of the chip module connected by the electrically insulating material.

Abstract: In one embodiment, the component comprises a light reflective housing. The housing comprises a matrix material of a light-transmittive plastic and particles of a glass ceramic embedded therein. The particles comprise a mean diameter of at least 5 ?m. The particles comprise a glass matrix and crystallites. A refractive index difference between the glass matrix and the crystallites is at least 0.5, and the crystallites exhibit a mean diameter between 20 nm and 0.5 ?m, inclusive.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The present disclosure is directed to systems and methods useful for providing a low profile metalens array that provides a relatively uniform far-field illumination in the visible and/or near-infrared electromagnetic spectrum using a plurality of vertical cavity surface emitting lasers (VCSELs) disposed a distance from a plurality of metalenses forming a metalens array, in which the VCSELs are decorrelated from the metalenses forming the metalens array.

Abstract: A phosphor and a method for making the phosphor are disclosed. In an embodiment a phosphor for emission of red light includes Sr(SraCa1-a)Si2Al2N6:Eu, wherein x is 0.8<x?1, wherein between 0.1% and 5% inclusive of the Sr, Ca and/or Sr/Ca lattice sites are replaced by Eu, wherein the parameter value a is between 0.6 and 1.0 inclusive, wherein the phosphor has a structure comprising (Si/Al)N4 tetrahedra arranged in a 3D network, in which layers in an a-c plane are linked in a b-direction, and wherein pure Sr positions and positions having a mixed Sr/Ca population are intercalated between the network, layer by layer.

Abstract: Disclosed herein are a number of dielectric pillars, arranged to form a close-packed aperiodic array, such as a Vogel spiral, where the geometries of the aperiodic array produce azimuthally isotropic scattering of luminescence within a restricted angular cone of extraction. The aperiodic array can be formed, attached or placed on a converting material, such as, phosphor, to restrict emission to within the angular cone of extraction. The phosphor could be part of a converting illumination device, such as a phosphor coated light emitting diode, or a laser activated remote phosphor converting device.

Abstract: In an embodiment a component includes a semiconductor chip, a connection member and a carrier, wherein the semiconductor chip is mechanically and electrically connected to the carrier via the connection member, wherein the connection member includes a contiguous metallic connecting layer and a plurality of metallic through-vias extending vertically through the connecting layer and being laterally spaced from the connecting layer by insulating regions, wherein the insulating regions are filled with a gaseous medium and are hermetically sealed, and wherein the gaseous medium contains an insulating gas having a higher breakdown field strength compared to nitrogen, or wherein a gas pressure is less than 1 mbar in the hermetically sealed insulating regions.

Abstract: A light-emitting device including a light-emitting semiconductor chip having a semiconductor layer sequence having at least one light-emitting semiconductor layer and a light-outcoupling surface, the light-emitting device further including a wavelength conversion layer arranged on the light-outcoupling surface, the wavelength conversion layer including quantum dots.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: A method of manufacturing a conversion element is disclosed. A precursor material is selected from one or more of lutetium, aluminum and a rare-earth element. The precursor material is mixed with a binder and a solvent to obtain a slurry. A green body is formed from the slurry and the green body is sintered to obtain the conversion element. The sintering is performed at a temperature of more than 1720° C.