Abstract: A high efficiency phosphor from the class of the thiometallates, preferably of the thiogallates. The thiometallate being made so as to correspond to the formula (AS)·w(B2S3), where A is at least one divalent cation selected from Mg, Ca, Sr, and where B is at least one trivalent cation selected from Al, Ga, Y. The factor w may lie either in the range 0.8 ≦w ≦0.98 or in the range 1.02 ≦w ≦1.2.

Abstract: A system and method is presented for measuring the volume of an ink-jet droplet or the relative volumes of a plurality of ink-jet droplets using their electrical properties. In a preferred embodiment a single small capacitor or an array of capacitors is used to measure the dielectric properties of ink-jet droplets and the absolute drop volumes are derived. In an alternative preferred embodiment the relative differences in drop volumes are determined. A feedback circuit, such as one using lock-in technique, may be used to automatically adjust subsequent drop volumes.

Abstract: The invention relates to a method for producing a structural component from at least one optoelectronic functional element and a glass pane, with the functional element being disposed in the region of a primary surface of the glass pane. This structural element is distinguished by the fact that the primary surface of the glass pane is connected to a frame such that the frame surrounds the edge surfaces of the functional element in the finished state of the composite element. The invention further relates to a functional element that can be produced with the method.

Abstract: A phosphor for light sources, the emission from which lies in the short-wave optical spectral region, as a garnet structure A3B5O12. It is activated with Ce, the second component B representing at least one of the elements Al and Ga, and the first component A is terbium or terbium together with at least one of the elements Y, Gd, La and/or Lu. In a preferred embodiment, a phosphor having a garnet of structure (Tb1−x−yRExCey)3(Al,Ga)5O12, where RE=Y, Gd, La and/or Lu; 0≦x≦0.5−y; 0<y<0.1 is used.

Abstract: For improving the light output, a light-emitting diode has at least one section of a light exit-side surface covered with a plurality of truncated pyramids. Light radiations, which are emitted by a light-generating layer, enter into the truncated pyramids through a base area and are efficiently coupled out of the sidewalls of the pyramids.

Abstract: The light source has an LED, preferably produced for the surface-mounting technique, embedded in a transparent material filling. A converter substance is integrated in the filling for the at least partial wavelength conversion of the light emitted by the LED. A lens is glued onto the transparent material filling. The material filling has a convex surface and the lens has a concave underside entering into a form fit with the convex surface of the material filling.

Abstract: A surface-mountable light emitting diode structural element in which an optoelectronic chip is attached to a chip carrier part of a lead frame, is described. The lead frame has a connection part disposed at a distance from the chip carrier part, and which is electrically conductively connected with an electrical contact of the optoelectronic chip. The chip carrier part presents a number of external connections for improved conduction of heat away from the chip. The external connections project from a casing and at a distance from each other.

Abstract: A method for producing a surface mounting optoelectronic component having comprises the following steps: readying a base body with the optoelectronic transmitter and/or receiver arranged in a recess of the base body, filling the recess of the base body with a transparent, curable casting compound, and placing the optical device onto the base body, so whereby the optical device comes into contact with the casting compound.

Abstract: A light-emitting semiconductor chip is produced by applying an epitaxially produced light-emitting semiconductor structure on a transparent substrate. First, a substrate layer is epitaxially grown on a lattice-matched substrate. The substrate layer is bonded, on a side facing away from the lattice-matched substrate, to the transparent substrate through the use of a wafer bonding process. Subsequently, the lattice-matched substrate is removed from the composite formed of the substrate layer and the transparent substrate. The light-emitting semiconductor structure is then epitaxially grown onto the exposed side of the substrate layer. The method is suitable, in particular, for producing light-emitting diode chips with active light-emitting diode structures, for which no optically transparent lattice-matched substrate material is available.

Abstract: An optoelectronic semiconductor chip has an active layer containing a photon-emitting zone. The active layer is attached to a carrier member at a bonding side of the active layer. The active layer has at least one recess therein with a cross-sectional area that decreases with increasing depth into said active layer proceeding from said bonding side.

Abstract: A process for producing structured or patterned protective and insulating layers includes applying a solution of a photosensitive polyhydroxyamide or polyhydroxyimide to a substrate and drying. The layer is patterned or structured by irradiation with UV light or X-rays through the use of a mask or by guidance of a UV or electron beam and by subsequent aqueous-alkali development. The patterned or structured layer is irradiated over the whole area with UV light and then tempered or heat-treated.

Abstract: A reflected light barrier has a housing with a base element. A semiconductor light emitter and a semiconductor light receiver are arranged on the base element in such a way that there is no free-standing partition between the light emitter and light receiver optically screening the light receiver from the light emitter. The light emitter has such a low beam divergence that the crosstalk from the light emitter to the light receiver is kept within operating tolerances.

Abstract: In the case of a multiple semiconductor laser structure containing a plurality of laser pn junctions stacked vertically one on top of the other, different operating temperatures of the active zones occur during operation on account of the different distance within the layer structure from a common heat sink. The displacements in the emission wavelength caused by the temperature influence are compensated by a variation of the thickness and/or material composition of the active zones, so that a narrow wavelength distribution is achieved.

Abstract: A vertical resonator structure with active layer and Bragg reflectors formed in a mesa and provided with an upper contact and a substrate contact. A bond pad for connection to a housing and the upper contact are parts of the same metallization layer that are directly adjacent to one another. For bundling current in the active layer, an aperture can be formed between oxidized regions of an AlGaAs layer. The oxidized regions have at least the dimensions of the bond pad which are for example, 90 &mgr;m and at least approximately 50 &mgr;m.

Abstract: A surface-mountable light emitting diode structural element in which an optoelectronic chip is attached to a chip carrier part of a lead frame, is described. The lead frame has a connection part disposed at a distance from the chip carrier part, and which is electrically conductively connected with an electrical contact of the optoelectronic chip. The chip carrier part presents a number of external connections for improved conduction of heat away from the chip. The external connections project from a casing and at a distance from each other.

Abstract: A laser radiation source is provided with an array of N individual slave laser diodes in a predetermined surface area. Adjustable power supply networks enable adjustment of the slave laser diodes relative to one another for operation in a stable manner. The slave power supply has a separate power supply network for each slave laser diode. Each of the power supply networks can be adjusted with respect to the current supplied to the respective slave laser diode during a certain operating period. This enables adjusting the slave laser diodes relative to one another. The power supply networks can be connected in parallel and supplied by a common source.

Abstract: An assembly device, in particular a fully automatic assembly device for producing microsystem technical products and for assembling components in the semiconductor industries, comprising an assembly table, a material transport system that transports the products to be placed with components, at least one transport system mounted on the assembly table, and at least one movable component transport unit with at least one assembly head. The component transport unit(s) is/are arranged on one or more carrier system(s) displaceable by means of a transport system in parallel to the direction of transport of the products to be placed with components, which products are in turn displaced by the material transport system(s).

Abstract: A light-emitting diode (1) comprises a window layer (4) above an active layer (3), the window layer having edge webs (6) profiled in a sawtooth-shaped manner. Edge lines (11) with which the current is injected into the active layer (3) proceed above the edge webs (6). The light-emitting diode (1) is distinguished by an especially high output efficiency.

Abstract: A surface-mountable light emitting diode structural element in which an optoelectronic chip is attached to a chip carrier part of a lead frame, is described. The lead frame has a connection part disposed at a distance from the chip carrier part, and which is electrically conductively connected with an electrical contact of the optoelectronic chip. The chip carrier part presents a number of external connections for improved conduction of heat away from the chip. The external connections project from a casing and at a distance from each other.

Abstract: A white-emitting luminescence conversion LED uses a chlorosilicate phosphor which, in addition to Ca and Mg, contains a europium doping, and also a garnet phosphor of the rare earths, in particular Y and/or Tb. In this way, it is possible to achieve a high color rendering and a high constancy of the lighting properties under differing temperature conditions.