Abstract: A method for the production and formation of microscopic semiconductor light emitting diodes Is set out. The method comprises the steps of: producing a semiconductor light emitting device (100) including a pn-junction (24) and metallization layers (6, 7); applying an etching mask (9-11) with a preset structure on one side of the semiconductor device (100), whereby the masked areas of the arrangement form and correspond to the diodes to be formed (30); applying a carrier (8, 12) on the other side of the semiconductor device (100); vertically etching the semiconductor material in the openings of the etching mask (9-11) to the carrier (8, 12) and thereby producing a diode arrangement containing a multiple number of diodes (30) below the masked areas.

Abstract: A surface-mountable light emitting diode structural element in which an optoelectronic chip is attached to a chip carrier part of a lead frame, is described. The lead frame has a connection part disposed at a distance from the chip carrier part, and which is electrically conductively connected with an electrical contact of the optoelectronic chip. The chip carrier part presents a number of external connections for improved conduction of heat away from the chip. The external connections project from a casing and at a distance from each other.

Abstract: The radiation emitting optoelectronic component has a radiation generating body with a planar optical waveguide and a wave guiding layer. The wave guiding layer has a radiation generating zone in which electromagnetic radiation is generated while the component is operating. The planar optical waveguide has at least one lateral output taper for outputting the radiation from the waveguide.

Abstract: A surface-mountable light emitting diode structural element in which an optoelectronic chip is attached to a chip carrier part of a lead frame, is described. The lead frame has a connection part disposed at a distance from the chip carrier part, and which is electrically conductively connected with an electrical contact of the optoelectronic chip. The chip carrier part presents a number of external connections for improved conduction of heat away from the chip. The external connections project from a casing and at a distance from each other.

Abstract: A II-VI semiconductor component is produced with an active layer sequence having at least one II-VI semiconductor layer containing Se and/or S on a substrate. First, an Se-free II-VI interlayer based on BeTe is grown epitaxially on the substrate in an essentially Se-free and S-free first epitaxy chamber. The active layer sequence is then grown epitaxially on the Se-free II-VI semiconductor layer.

Abstract: Light source (1) for generating visible light (200), comprising at least one diode (10) on a semiconductor basis emitting ultraviolet light (100) and at least one luminophor (20) into which the emitted ultraviolet light (100) beams and which generates the visible light from the emitted ultraviolet light (100). Application: Generation of white light offering especially high color fidelity.

Abstract: An optoelectronic structural element in which an optoelectronic chip is attached to a chip carrier part of a lead frame. The lead frame has a connection part disposed at a distance from the chip carrier part, and which is electrically conductively connected with an electrical contact of the optoelectronic chip. The chip carrier part presents a number of external connections for improved conduction of heat away from the chip. The external connections project from a casing and at a distance from each other.

Abstract: A method for a quantitative detection of a linear movement or rotary movement. The method includes the steps of emitting radiation from at least two light emitters in a pulsed mode at a same clock frequency or different clock frequencies and detecting the radiation from the two light emitters by a detection device. It furthermore includes the steps of increasingly shadowing the radiations by a movable grid device or separating signals originating from different light emitters by an evaluation circuit coupled to said detection device.

Abstract: The wavelength-converting casting composition is based on a transparent epoxy casting resin with a luminous substance admixed. The composition is used in an electroluminescent component having a body that emits ultraviolet, blue or green light. An inorganic luminous substance pigment powder with luminous substance pigments is dispersed in the transparent epoxy casting resin. The luminous substance is a phosphororous group of the general formula A3B5X12:M, and the luminous substance pigments have particle sizes ≦20 &mgr;m and a mean grain diameter d50≦5 &mgr;m.

Abstract: The light-radiating semiconductor component has a radiation-emitting semiconductor body and a luminescence conversion element. The semiconductor body emits radiation in the ultraviolet, blue and/or green spectral region and the luminescence conversation element converts a portion of the radiation into radiation of a longer wavelength. This makes it possible to produce light-emitting diodes which radiate polychromatic light, in particular white light, with only a single light-emitting semiconductor body. A particularly preferred luminescence conversion dye is YAG:Ce.

Abstract: The invention describes a flexible multiple LED module having a plurality of rigid printed circuit boards, which are each connected at one of their main surfaces to a flexible printed circuit board with a spacing between one another, and a plurality of LEDs, which are mounted in the region of the rigid printed circuit boards on the flexible printed circuit board. The multiple LED module is suitable particularly for installation in luminaire housings, in particular for motor vehicles.

Abstract: The wavelength-converting casting composition is based on a transparent epoxy casting resin with a luminous substance admixed. The composition is used in an electroluminescent component having a body that emits ultraviolet, blue or green light. An inorganic luminous substance pigment powder with luminous substance pigments is dispersed in the transparent epoxy casting resin. The luminous substance is a phosphorous group of the general formula A3B5X12:M, and the luminous substance pigments have particle sizes ≦20 &mgr;m and a mean grain diameter d50≦5 &mgr;m.

Abstract: The wavelength-converting casting composition is based on a transparent epoxy casting resin with a luminous substance admixed. The composition is used in an electroluminescent component having a body that emits ultraviolet, blue or green light. An inorganic luminous substance pigment powder with luminous substance pigments is dispersed in the transparent epoxy casting resin. The luminous substance is a powder of Ce-doped phosphors and the luminous substance pigments have particle sizes ≦20 &mgr;m and a mean grain diameter d50≦5 &mgr;m.

Abstract: The light-radiating semiconductor component has a radiation-emitting semiconductor body and a luminescence conversion element. The semiconductor body emits radiation in the ultraviolet, blue and/or green spectral region and the luminescence conversion element converts a portion of the radiation into radiation of a longer wavelength. This makes it possible to produce light-emitting diodes which radiate polychromatic light, in particular white light, with only a single light-emitting semiconductor body. A particularly preferred luminescence conversion dye is YAG:Ce.

Abstract: The light-radiating semiconductor component has a radiation-emitting semiconductor body and a luminescence conversion element. The semiconductor body emits radiation in the ultraviolet, blue and/or green spectral region and the luminescence conversion element converts a portion of the radiation into radiation of a longer wavelength. This makes it possible to produce light-emitting diodes which radiate polychromatic light, in particular white light, with only a single light-emitting semiconductor body. A particularly preferred luminescence conversion dye is YAG:Ce.

Abstract: The invention relates to a method for producing a light-emitting component. A sequence of layers including at least one active layer is formed on the front face of a basic substrate consisting of semiconductor material. Subsequently, the basic substrate is at least partially removed and the sequence of layers is connected to an external substrate. The basic substrate is removed by wet-chemical etching in an etching agent that acts selectively on the material of the basic substrate. A first metallic contact layer is then applied to an end surface of the sequence of layers, and a second metallic contact layer is applied to an end surface of the external substrate. The sequence of layers is connected to the external substrate by connecting the first metallic contact layer to the second metallic contact layer using heat, by means of eutectic bonding.