Abstract: An optoelectronic component includes a substrate, a connecting element applied on the substrate and a layer sequence that emits electromagnetic radiation. The layer sequence is applied on the connecting element. The connecting element includes at least one connecting material that has an oriented molecular configuration. The connecting element has at least one parameter that is anisotropic.

Abstract: An optoelectronic semiconductor chip has a semiconductor body and a substrate on which the semiconductor body is disposed. The semiconductor body has an active region disposed between a first semiconductor layer of a first conductor type and a second semiconductor layer of a second conductor type. The first semiconductor layer is disposed on the side of the active region facing the substrate. The first semiconductor layer is electrically conductively connected to a first termination layer that is disposed between the substrate and the semiconductor body. An encapsulation layer is disposed between the first termination layer and the substrate and, in plan view of the semiconductor chip, projects at least in some regions over a side face which delimits the semiconductor body.

Abstract: An optoelectronic semiconductor element may include at least one LED chip which emits infrared radiation via a top side during operation. The radiation has a global intensity maximum at wavelengths between 800 nm and 1100 nm. The radiation has, at most 5% of the intensity of the intensity maximum at a limit wavelength of 750 nm. The radiation has a visible red light component. The semiconductor element may further include a filter element, which is arranged directly or indirectly on the top side of the LED chip and which has a transmissivity of at most 5% for the visible red light component of the LED chip, wherein the transmissivity of the filter element is at least 80%, at least in part, for wavelengths between the limit wavelength and 1100 nm, and a radiation exit surface provided for emitting the filtered radiation.

Abstract: A phosphor is disclosed. In an embodiment a phosphor includes an inorganic substance which includes, in its composition, at least an element D, an element Al, an element AX, an element SX and an element NX where D includes one, two or more elements selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, alkali metals and Yb, Al includes one, two or more elements selected from the group consisting of divalent metals not included in D, SX includes one, two or more elements selected from the group consisting of tetravalent metals, AX includes one, two or more elements selected from the group consisting of trivalent metals, and NX includes one, two or more elements selected from the group consisting of O, N, S, C, Cl, and F, wherein the inorganic substance has the same crystal structure as Sr(SraCa1-a)Si2Al2N61.

Abstract: Various embodiments may relate to an optoelectronic component, including a carrier, a planar, electrically active region on or above the carrier; an adhesion layer on or above the electrically active region, wherein the adhesion layer at least partly surrounds the electrically active region, a cover on or above the adhesion layer, wherein a part of the adhesion layer is exposed, and an encapsulation on or above the exposed adhesion layer, wherein the encapsulation is formed from an inorganic substance or substance mixture. Further various embodiments may relate to a method for producing an optoelectronic component.

Abstract: A heat sink for an illumination device may include at least one heat sink portion which includes heat-conducting plastic. At least one metallic heat sink portion is at least partially embedded in the plastic material of the heat-conducting plastic.

Abstract: Various embodiments relate to an irradiation device including a pump radiation source for emitting pump radiation, a conversion element for converting the pump radiation into conversion radiation of longer wavelength, and a reflection surface, which is reflective to the conversion radiation and on which backscattered conversion radiation emitted at a backscatter emission surface and thus counter to a useful direction is incident and is reflected therefrom back to the conversion element; said reflection surface is concavely curved relative to the conversion element in such a way that at least the backscattered conversion radiation emitted divergently from a surface centroid of the backscatter emission surface is incident on the reflection surface at an angle of incidence of at most 20° in terms of absolute value.

Abstract: A lighting device, in various embodiments, for generating a light emission, has a light source designed to generate light with a first dominant wavelength, a first converter designed to absorb the light generated by the light source and to emit light with a second dominant wavelength, which is longer than the first dominant wavelength, and a second converter designed to absorb a portion of the light emitted by the first converter and to emit light such that the light emission has a third dominant wavelength, which is longer than the second dominant wavelength.

Abstract: An optoelectronic semiconductor chip includes a semiconductor layer sequence having at least one active layer. Furthermore, the semiconductor chip has a top-side contact structure on a radiation main side of the semiconductor layer sequence and an underside contact structure on an underside situated opposite to the radiation main side. Furthermore, the semiconductor chip includes at last two trenches that extend from the radiation main side towards the underside. As seen in a plan view of the radiation main side, the top-side contact structure and the underside contact structure are arranged in a manner spaced apart from one another. Likewise as seen in a plan view of the radiation main side, the trenches are located between the top-side contact structure and the underside contact structure.

Abstract: An organic optoelectronic component and a method for operating the organic optoelectronic component are disclosed. In an embodiment an organic optoelectronic component includes at least one organic light emitting element, at least one first organic light detecting element including at least one first organic light detecting layer, and at least one second organic light detecting element including at least one second organic light detecting layer, wherein the at least one organic light emitting element, the at least one first organic light detecting element and the at least one second light detecting element are arranged laterally on a common substrate, wherein the at least one first organic light detecting element is configured to detect ambient light, and wherein the at least one second organic light detecting layer of the at least one second organic light detecting element is arranged between two non-transparent layers.

Abstract: A lighting device comprising a pump laser matrix (2) and a phosphor arrangement. The pump laser matrix (2) is configured to emit pump radiation (7) having a controllable pump radiation power distribution for the irradiation of the phosphor arrangement (4). The phosphor arrangement (4) comprises at least two different phosphors (R, Y, G) which can be irradiated with the pump radiation (7) and re-emit said pump radiation in a manner such that it is at least partly and in each case differently wavelength-converted. The lighting device (1) is configured to generate, with the aid of the pump laser matrix (2), a controllable distribution of the surface power density of the pump radiation on the phosphors (R, Y, G) of the phosphor arrangement (4).

Abstract: A carrier substrate includes a first major face and a second major face opposite the first major face. A diode structure is formed between the first major face and the second major face, which diode structure electrically insulates the first major face from the second major face at least with regard to one polarity of an electrical voltage.

Abstract: A lighting may include at least one semiconductor light source which emits primary light, at least one phosphor region spaced apart from the at least one semiconductor light source and serving for at least partly converting the primary light into secondary light, and at least one filter disposed downstream of the at least one phosphor region, wherein the at least one filter is partly reflective at least to the primary light.

Abstract: A headlight module comprising separate phosphors which can be excited by electromagnetic radiation to emit light, and at least one radiation source for exciting the phosphors. Each phosphor is associated with an optical device, so that light emitted by the optical devices is merged into an overall image. Beam splitter devices and beam directing devices are disposed such that electromagnetic radiation emitted by the at least one radiation source is directed on the phosphors. A control device is provided for controlling operation of the at least one radiation source and the beam directing devices.

Abstract: An optoelectronic semiconductor chip includes a semiconductor body that has a semiconductor layer sequence and at least one opening that extends through a second semiconductor layer into a first semiconductor layer. The chip also includes a support, which includes at least one recess, and a metallic connecting layer between the semiconductor body and the support. The metallic connecting layer includes a first region and a second region. The first region is connected to the first semiconductor layer in an electrically conductive manner through the opening and the second region is connected to the second semiconductor layer in an electrically conductive manner. A first contact is connected to the first region in an electrically conductive manner through the recess or a second contact is connected to the second region in an electrically conductive manner through the recess.

Abstract: Lighting control interface techniques and corresponding circuitry are provided. The techniques include receiving a first signal potentially representative of a first lighting control signal, and receiving a second signal potentially representative of a second lighting control signal, and determining if either of the first and second signals complies with a first or second lighting control protocol. The lighting control signal may be applied to the same interface connector (regardless of the protocol), thereby eliminating the need for separate dedicated interface connectors. In some cases, the techniques further include determining that a dummy control signal is manifesting in the first and/or second signals, thereby indicating that no lighting control signal is being applied. Depending on the resulting determination, the techniques may include, for example, setting output lighting power according to a pre-established value, or according to the first or second lighting control protocol.

Abstract: An overvoltage protection apparatus may include a first connection for coupling to an N line, and at least one voltage-limiting element which is designed to block the current through the voltage-limiting element up to a predefinable threshold value of the voltage dropped across the voltage-limiting element and to conduct the current above this threshold value. The overvoltage protection apparatus may further include a second connection for coupling to a metal housing of an electrical apparatus, at least one capacitor, and at least one first non-reactive resistor. The at least one capacitor, the at least one first non-reactive resistor and the at least one voltage-limiting element are connected in series between the first connection and the second connection.

Abstract: In a method for producing a laser diode, a number of laser diodes are produced on a wafer. The wafer is broken down into wafer pieces, each wafer piece having a plurality of laser diodes being arranged side by side. One wafer piece is inserted into a first mount that includes a first covering element overlapping a front face of the wafer piece and shadowing a bottom area of the front face of the wafer piece. A minor layer is deposited on an unshadowed upper area of the wafer piece's front face. The wafer piece is inserted into a second mount, which includes a second covering element that shadows the minor layer of the upper area of the front face. An electrically conductive contact layer is deposited on an unshadowed bottom area of the wafer piece's front face. The wafer piece is subsequently broken down into individual laser diodes.

Abstract: An optoelectronic component including a connection carrier comprising a structured carrier strip in which interspaces are filled with an electrically insulating material and an optoelectronic semiconductor chip attached and electrically connected to a top portion of the connection carrier, wherein the electrically insulating material terminates substantially flush with the carrier strip in places or the carrier strip projects beyond the electrically insulating material, and the carrier strip is not covered by the electrically insulating material on the top portion and/or on a bottom portion of the connection carrier.

Abstract: A driver port that provides selectable output currents based on connections thereto, and a driver including the same, is provided. A plurality of shunt resistors are connected in series between a negative output of a driver and a ground. A driver port having a plurality of connection points is provided, each respective connection point connected to a different connection between two of the plurality of shunt resistors. A load including one or more solid state light sources is capable of being connected between one of the connection points of the driver port and a positive output of the driver.