Abstract: An optoelectronic sensor device and a method for operating an optoelectronic sensor device are disclosed. In an embodiment the optoelectronic sensor device includes a radiation-emitting semiconductor chip configured to emit radiation with a peak wavelength which depends on a temperature of the radiation-emitting semiconductor chip. The sensor device further includes a sensor chip configured to detect a part of the radiation reflected back to the sensor chip as well as a spectral filter component having an adjustable spectral transmission range. A wavelength determination unit is configured to determine the peak wavelength and a filter driver is configured to adjust the spectral transmission range to the determined peak wavelength.

Abstract: A support structure for electrically-powered lighting devices (e.g. LED modules) includes: an elongated laminar substrate having first and second mutually opposed surfaces, a layer of electrically-conductive material, e.g. copper, on the first surface of the laminar substrate, the layer including etching forming first electrically-conductive formations extending along the first surface of the laminar substrate, a distribution of electrically-conductive areas on the second surface of the laminar substrate, the distribution including electrically-conductive areas formed by means of etching and distributed with a constant separation pitch along the second surface of the laminar substrate, electrically-conductive vias extending through the laminar substrate to connect the first electrically-conductive formations and the electrically-conductive areas in said distribution, and a network of second electrically-conductive formations including electrically-conductive ink deposited (e.g.

Abstract: A light emitting semiconductor device includes at least one light emitting semiconductor chip having a semiconductor layer sequence, a light outcoupling surface, a rear face on an opposite side of the semiconductor layer sequence from the light outcoupling surface, and side faces which connect the light outcoupling surface and the rear face. The light emitting semiconductor device further includes a carrier body, having a molded body which covers the side faces of the at least one light emitting semiconductor chip directly and in a positively-locking manner. The carrier body comprises, at the light outcoupling surface of the at least one light emitting semiconductor chip, a top face on which a dielectric mirror is disposed. At least part of the light outcoupling surface is uncovered by the dielectric mirror.

Abstract: A module for a video wall is disclosed. In an embodiment a module includes a carrier, a plurality of components comprising at least one light-emitting structural element arranged on the carrier and an optical element, wherein the components are arranged at a prespecified lateral distance in relation to one another, wherein a retaining recess is formed between at least two components, wherein the retaining recess comprises at least two component recesses of two components which are arranged next to one another, wherein a retaining pin is fastened in the retaining recess, wherein the retaining pin is connected to the optical element, and wherein the optical element is configured to influence light irradiation onto the components and/or light emission from the components.

Abstract: A solar simulator with at least one lamp module, where the luminous module contains multiple light generating units is disclosed. Each of the light generating units contain at least one semiconductor light source, which generate light in a plurality of separately controllable wavelength ranges. Disposed downstream from the light generating units is a light-concentrating primary optical unit. A light-homogenizing secondary optical unit is likewise disposed downstream of the light generating units. And an imaging tertiary optical unit is disposed downstream of the secondary optical unit. A method for operating the solar simulator and the light generating units in such a way that the solar simulator generates light radiation that alters over time is also disclosed.

Abstract: A lead frame used to produce a chip package includes a first lead frame section and a second lead frame section connected to one another by a bar, wherein the bar includes a first longitudinal section, a second longitudinal section and a third longitudinal section, the first longitudinal section adjoins the first lead frame section and the third longitudinal section adjoins the second lead frame section, the first longitudinal section and the third longitudinal section are oriented parallel to one another, the first longitudinal section and the second longitudinal section form an angle not equal to 180° and not equal to 90°, and the lead frame is planar.

Abstract: An optoelectronic semiconductor component having a light source, which emits primary radiation, a housing, and electrical terminals, wherein a conversion element, which is based on a matrix and at least two phosphors, is connected upstream of the optoelectronic semiconductor component. The matrix contains metal phosphate and preferably consists of metal phosphate. The phosphors partially or completely convert primary radiation. At least one first phosphor powder is embedded and fixed in a first inorganic matrix based on a metal phosphate, and at least one second phosphor powder is embedded and fixed in a second matrix based on a metal phosphate.

Abstract: A lighting device comprising a plurality of components (2) provided for generating radiation, a plurality of row lines (Z1, Z2) and a plurality of column lines (S1, S2, . . . , S5) is specified, wherein the components are in each case electrically conductively connected to a row line and to a column line and the lighting device is provided for the simultaneous operation of at least two components. A lighting arrangement comprising such a lighting device and a method for operating a lighting device are furthermore specified.

Abstract: A light module for providing polychromatic light is provided. The light module includes a wavelength conversion element, a first light source for emitting a first light beam in a first wavelength range, and at least one second light source for emitting a second light beam. The element is configured to convert primary light radiated in by the first light beam into a first conversion light and to convert primary light radiated in by the at least one second light beam into a second conversion light. At least the first conversion light and the second conversion light together form a third light beam. The module further includes a control unit configured for predefining a first luminous intensity for the first light source and/or a second luminous intensity for the at least one second light source depending on a measurement of the light color of the third light beam.

Abstract: A method for producing an electronic component and an electronic component, having barrier layers for the encapsulation of the component. The method involves providing a substrate (1) with at least one functional layer (22), and an electronic component, applying at least one first barrier layer (3) on the functional layer (22) by way of plasmaless atomic layer deposition (PLALD), and applying at least one second barrier layer (4) on the functional layer (22) by way of plasma-enhanced chemical v0apor deposition (PECVD).

Abstract: According to the present disclosure, lighting sources having operating parameter(s) which is controllable in lighting sequence(s) as a function of a time code data set coupled with the sequence, are controlled in cooperation with virtual/augmented reality device(s), by: providing a repository of operating data files for the sources, coupled with the lighting sources, with each data file including time code data set(s) for lighting sequence(s) for a source among the lighting sources, retrieving in the data repository operating data file(s) coupled with a selected one of the lighting sources, and detecting a virtual/augmented reality signal from the virtual/augmented reality device(s), indicative of the fact that the virtual/augmented reality device is gazing at and/or is recognizing the selected lighting source, and operating the selected lighting source by controlling the operating parameter(s) as a function of the operating data included in the operating data file retrieved and of the virtual/augmented reali

Abstract: A converter material includes a porous inorganic matrix material having a multiplicity of pores. A multiplicity of inorganic nanoparticles are applied on the surface of the matrix material. The nanoparticles are suitable for converting electromagnetic radiation in a first wavelength range into electromagnetic radiation in a second wavelength range. A method for producing such a converter material and an optoelectronic component that includes such a converter material are furthermore specified.

Abstract: Various embodiments may relate to a sensor unit having a plurality of sensor elements, the detection data of which are used for controlling an opto-electronic light source. According to various embodiments, the plurality of sensor elements are arranged on a substrate body, which is provided in the form of a molded circuit carrier made of a plastic material, and detect different regions and/or sizes.

Abstract: A method and a device for inspecting an optoelectronic component are disclosed. In an embodiment, the method includes exciting at least one electromagnetic resonant circuit, formed by the at least one optoelectronic component and the connection board, such that the at least one optoelectronic component emits electromagnetic radiation, wherein exciting the electromagnetic resonant circuit comprises applying an electrical alternating voltage in the electromagnetic resonant circuit by generating a temporally variable electromagnetic alternating field by a first coil and a second coil, wherein the first coil and the second coil are movable with respect to the connection board.

Abstract: A method is provided for producing a pulverulent precursor material of the general formula M1xM2y(Si,Al)12(O,N)16 or M12-zM2zSi8Al4N16 having the method steps A) producing a pulverulent mixture of starting materials, B) calcining the mixture under a protective gas atmosphere and subsequent grinding, wherein in method step A) at least one nitride with a specific surface area of greater than 2 m2/g is selected as starting material. A pulverulent precursor material and the use thereof are additionally provided.

Abstract: A method for mirror-coating lateral surfaces of optical components, a mirror-coated optical component and an optoelectronic semiconductor body mountable on surface are disclosed. In an embodiment, an optoelectronic semiconductor body includes a semiconductor chip having a radiation side and a contact side different from the radiation side, wherein contact elements for electrically contacting the semiconductor body are attached to the contact side, and wherein the contact elements are freely accessible. The body further includes a metal mirror layer disposed on the semiconductor chip, wherein the metal mirror layer has a reflectivity of at least 80% to radiation emitted by the semiconductor chip during operation, wherein the mirror layer is a continuous and contiguous mirror layer, which covers all sides of the semiconductor chip that are not the contact side and the radiation side by at least 95%, and wherein the mirror layer is arranged at the semiconductor chip in a form-fit manner.

Abstract: An optoelectronic semiconductor component comprises an optoelectronic semiconductor chip (C1) having an electrically conductive substrate (T), an active part (AT) containing epitaxially grown layers, and an intermediate layer (ZS) which is arranged between the substrate (T) and the active part (AT) and contains a solder material. The optoelectronic semiconductor component further comprises an electrical connection point, which at least partially covers an underside of the substrate (T), wherein the electrical connection point comprises a first contact layer (KS1) on a side facing the substrate (T), and the first contact layer (KS1) contains aluminium or consists of aluminium.

Abstract: The invention relates to an illuminant (23) and a socket (20) for a lamp (15). The features of the socket (20) can be implemented also independently of the features of the illuminant (23). The illuminant (23) has a preferably planar illumination surface (24). One or more semiconductor lighting elements are arranged within an illuminant housing (30). The illuminant connection device (70) required for mechanical and electrical connection to the socket (20) is provided on the rear face (66) of the illuminant (23), said rear face (66) lying opposite the illumination surface (24). The dimensions of the illuminant are preferably greater than the dimensions of the socket (10) such that the illuminant (23) fully covers the socket when looking onto the illumination surface (24), resulting in a particularly appealing look. Said socket and illuminant (23) modularly achieve large total illumination surfaces in a lamp (15) and an appealing overall appearance in a very simple manner.

Abstract: A method of producing an electronic component includes providing a surface comprising a first region and a second region adjoining the first region, arranging a sacrificial layer above the first region of the surface, arranging a passivation layer above the sacrificial layer and the second region of the surface, creating an opening in the passivation layer above the first region of the surface, wherein the opening in the passivation layer is created with an opening area that is smaller than the first region, and removing the sacrificial layer and the portions of the passivation layer that are arranged above the first region.

Abstract: A method for producing a conversion element is disclosed. In an embodiment, the method includes providing an acidic medium having a pH value of less than 2, adding a conversion material into the acidic medium thereby forming a mixture and adding a silicate solution having a viscosity between 2 to 10 000 poize inclusive to the mixture such that the pH value during the addition of the silicate solution is smaller than 2. The method further includes obtaining a precipitate which contains the conversion material and silicon dioxide as a matrix material, separating the precipitate, washing the precipitate with a washing medium, wherein the washing medium has a pH value of less than 2; and hardening the precipitate thereby forming the conversion element.